2N3999J |
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Semico
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Package = Level = Jantxv Vceo (V) = 80 Vcbo (V) = 100 Vebo (V) = 8.0 Ic (A) = 5.00 Power (W) ta = 2 Rtja (C/W) = Tstg/top (C) = -65 to +200 Hfe = 240 VCE(sat) (V) = 0.25 |
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Original |
PDF
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2N3999JAN |
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New England Semiconductor
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NPN POWER SWITCHING SILICON TRANSISTOR |
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Original |
PDF
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2N3999JAN |
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API Electronics
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Short form transistor data |
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Short Form |
PDF
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2N3999JAN |
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Unitrode
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International Semiconductor Data Book 1981 |
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Scan |
PDF
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2N3999JANTX |
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Unitrode
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International Semiconductor Data Book 1981 |
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Scan |
PDF
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2N3999JANTXV |
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Microsemi
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NPN POWER SWITCHING SILICON TRANSISTOR |
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Original |
PDF
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2N3999JANTXV |
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Unitrode
|
International Semiconductor Data Book 1981 |
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Scan |
PDF
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2N3999JTX |
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New England Semiconductor
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NPN POWER SWITCHING SILICON TRANSISTOR |
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Original |
PDF
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2N3999JTX |
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API Electronics
|
Short form transistor data |
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Short Form |
PDF
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2N3999JTXV |
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API Electronics
|
Short form transistor data |
|
Short Form |
PDF
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2N3999JV |
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Semico
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Package = Level = Jantxv Vceo (V) = 80 Vcbo (V) = 100 Vebo (V) = 8.0 Ic (A) = 5.00 Power (W) ta = 2 Rtja (C/W) = Tstg/top (C) = -65 to +200 Hfe = 240 VCE(sat) (V) = 0.25 |
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Original |
PDF
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2N3999JX |
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Semico
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Package = Level = Jantxv Vceo (V) = 80 Vcbo (V) = 100 Vebo (V) = 8.0 Ic (A) = 5.00 Power (W) ta = 2 Rtja (C/W) = Tstg/top (C) = -65 to +200 Hfe = 240 VCE(sat) (V) = 0.25 |
|
Original |
PDF
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