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    2N3906 PNP TRANSISTOR DC CURRENT GAIN Search Results

    2N3906 PNP TRANSISTOR DC CURRENT GAIN Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    2N3906 PNP TRANSISTOR DC CURRENT GAIN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N3906 APPLICATION

    Abstract: 2N3906 hie 2N3906 tr 2n3906
    Text: SEMICONDUCTOR 2N3906 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・Low Leakage Current : ICEX=-50nA Max. , IBL=-50nA(Max.) @VCE=-30V, VEB=-3V. ・Excellent DC Current Gain Linearity. ・Low Saturation Voltage


    Original     		PDF 2N3906 -50nA -50mA, 2N3904. x10-4 -10mA, -10mA -50mA 2N3906 APPLICATION 2N3906 hie 2N3906 tr 2n3906

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR 2N3906 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・Low Leakage Current : ICEX=-50nA Max. , IBL=-50nA(Max.) @VCE=-30V, VEB=-3V. ・Excellent DC Current Gain Linearity. ・Low Saturation Voltage


    Original     		PDF 2N3906 -50nA -50mA, 2N3904. x10-4

    1N916

    Abstract: 2N3904 2N3906
    Text: SEMICONDUCTOR 2N3906 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C A FEATURES Low Leakage Current N : ICEX=-50nA Max. , IBL=-50nA(Max.) K @VCE=-30V, VEB=-3V. E G Excellent DC Current Gain Linearity.


    Original     		PDF 2N3906 -50nA -50mA, 2N3904. 1N916 2N3904 2N3906

    transistor 2n3906

    Abstract: high gain low voltage PNP transistor TO-92 ALL DATA SHEET PNP switching transistor 2N3906 mhz PNP switching transistor 2N3906 2N3906 2N3904 plastic npn, transistor, sc 103 b 2N3904 NPN Transistor 2n3906 specification
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N3906 PNP switching transistor Product specification Supersedes data of 1999 Apr 23 2004 Oct 11 Philips Semiconductors Product specification PNP switching transistor 2N3906 FEATURES PINNING • Low current max. 200 mA


    Original     		PDF M3D186 2N3906 2N3904. MAM280 SCA76 R75/04/pp7 transistor 2n3906 high gain low voltage PNP transistor TO-92 ALL DATA SHEET PNP switching transistor 2N3906 mhz PNP switching transistor 2N3906 2N3906 2N3904 plastic npn, transistor, sc 103 b 2N3904 NPN Transistor 2n3906 specification

    TRANSISTOR 2n3906

    Abstract: PNP switching transistor 2N3906 mhz transistor ST 2N3904 PNP switching transistor 2N3906 2n3906 PNP 2N3904 2N3906 2N3906 ON 2N3904 philips
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N3906 PNP switching transistor Product specification Supercedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jun 20 Philips Semiconductors Product specification PNP switching transistor


    Original     		PDF M3D186 2N3906 2N3904. MAM280 SCA54 117047/00/02/pp8 TRANSISTOR 2n3906 PNP switching transistor 2N3906 mhz transistor ST 2N3904 PNP switching transistor 2N3906 2n3906 PNP 2N3904 2N3906 2N3906 ON 2N3904 philips

    transistor 2n3906

    Abstract: PNP switching transistor 2N3906 2N3904 2N3906 BP317 2N3906 TO92 transistor ST 2N3904 2N3904 philips
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N3906 PNP switching transistor Product specification Supersedes data of 1997 Jun 20 1999 Apr 23 Philips Semiconductors Product specification PNP switching transistor 2N3906 FEATURES PINNING • Low current max. 200 mA


    Original     		PDF M3D186 2N3906 2N3904. MAM280 SCA63 115002/00/03/pp8 transistor 2n3906 PNP switching transistor 2N3906 2N3904 2N3906 BP317 2N3906 TO92 transistor ST 2N3904 2N3904 philips

    pin configuration NPN transistor 2n3906

    Abstract: TRANSISTOR 2N3904 2N3906 plastic PNP switching transistor 2N3906 mhz 2N3904 2N3906 MMBT3906 pin configuration NPN transistor 2N3904 pin configuration pnp transistor 2n3906
    Text: 2N3906 Small Signal Transistor PNP TO-226AA (TO-92) 0.142 (3.6) 0.181 (4.6) t c u rod P New min. 0.492 (12.5) 0.181 (4.6) Features • PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. • As complementary type, the NPN transistor


    Original     		PDF 2N3906 O-226AA 2N3904 OT-23 MMBT3906. pin configuration NPN transistor 2n3906 TRANSISTOR 2N3904 2N3906 plastic PNP switching transistor 2N3906 mhz 2N3906 MMBT3906 pin configuration NPN transistor 2N3904 pin configuration pnp transistor 2n3906

    2n3906

    Abstract: 2n3906 PNP transistor DC current gain 2N3906-O 2N3906-G 2n3906 specification 2N3906-Y 2n3906 equivalent 2n3906 equivalent transistor
    Text: 2N3906 -0.2A, -40V PNP General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES TO-92 Power Dissipation PCM: 625mW Ta=25°C Collector Current ICM: -200mA Collector – Base Voltage V(BR)CBO: -40V


    Original     		PDF 2N3906 625mW -200mA 2N3906-O 2N3906-Y 2N3906-G 31-Dec-2010 -10mA -50mA -10mA, 2n3906 2n3906 PNP transistor DC current gain 2N3906-O 2N3906-G 2n3906 specification 2N3906-Y 2n3906 equivalent 2n3906 equivalent transistor

    2n3906 equivalent transistor

    Abstract: 2N3906 NPN Transistor Transistor 2N3904 2N3906 SOT-23 2N3906 tr 2n3906 transistor 2n3906 applications PNP switching transistor 2N3906 mhz 2N3906 TO-92 2n3906 PNP transistor DC current gain
    Text: 2N3906 TRANSISTOR PNP PRODUCT SUMMARY TO-92 Plastic-Encapsulate Transistors TO-92 FEATURES PNP silicon epitaxial planar transistor for switching and Amplifier applications As complementary type, the NPN transistor 2N3904 is Recommended This transistor is also available in the SOT-23 case with


    Original     		PDF 2N3906 2N3904 OT-23 MMBT3906 2n3906 equivalent transistor 2N3906 NPN Transistor Transistor 2N3904 2N3906 SOT-23 2N3906 tr 2n3906 transistor 2n3906 applications PNP switching transistor 2N3906 mhz 2N3906 TO-92 2n3906 PNP transistor DC current gain

    PNP 2n3906 331

    Abstract: 2n3906 equivalent transistor 2N4148 2n3906 331 transistor kt 925 NPn 2n3906 331 capacitor 476 10k 935 ltc3880 LTspice npn equivalent of 2n3906 transistor
    Text: Application Note 137 May 2012 Accurate Temperature Sensing with an External P-N Junction Michael Jones Introduction Temperature Sensing Theory Many Linear Technology devices use an external PNP transistor to sense temperature. Common examples are LTC3880, LTC3883 and LTC2974. Accurate temperature


    Original     		PDF LTC3880, LTC3883 LTC2974. an137f AN137-12 PNP 2n3906 331 2n3906 equivalent transistor 2N4148 2n3906 331 transistor kt 925 NPn 2n3906 331 capacitor 476 10k 935 ltc3880 LTspice npn equivalent of 2n3906 transistor

    pin configuration NPN transistor 2n3906

    Abstract: 2N3906 2n3906 PNP transistor DC current gain 2N3906 APPLICATION 2n3906 hie 2N3906BU 2N3904 2N3906-BULK 2N3906-TAP MMBT3906
    Text: 2N3906 Vishay Semiconductors Small Signal Transistor PNP Features • PNP Silicon Epitaxial Planar Transistor switching and amplifier applications. • As complementary type, the NPN transistor 2N3904 is recommended. • On special request, this transistor is also manufactured in the pin configuration TO-18.


    Original     		PDF 2N3906 2N3904 OT-23 MMBT3906. 2N3906-BULK 2N3906-TAP D-74025 14-Dec-04 pin configuration NPN transistor 2n3906 2N3906 2n3906 PNP transistor DC current gain 2N3906 APPLICATION 2n3906 hie 2N3906BU 2N3906-TAP MMBT3906

    2n3906 equivalent transistor

    Abstract: data sheet transistor 2n3906 transistor 2N3906 datasheet transistor 2N3906 PNP 2N3906 2N3906 PNP 2n3906 specification 2n3906 datasheet 2n3906 equivalent 2N3906
    Text: 2N3906 PNP Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 COLLECTOR 3 ƔFEATURES 2 BASE . Power Dissipation 1 EMITTER PCM: 625 mW Ta=25к 1 2 . Collector Current 3


    Original     		PDF 2N3906 01-Jun-2002 2n3906 equivalent transistor data sheet transistor 2n3906 transistor 2N3906 datasheet transistor 2N3906 PNP 2N3906 2N3906 PNP 2n3906 specification 2n3906 datasheet 2n3906 equivalent 2N3906

    2n3906 PNP

    Abstract: transistor 2N3906 2N3904 2N3906 2N3906 "PNP"
    Text: UTC 2N3906 PNP EPITAXIAL PLANAR TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES *Collector-Emitter Voltage: VCEO=40V *Collector Dissipation: Pc max =625mW *Complementary to 2N3904 1 TO-92 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )


    Original     		PDF 2N3906 625mW 2N3904 QW-R201-028 2n3906 PNP transistor 2N3906 2N3904 2N3906 2N3906 "PNP"

    pin configuration NPN transistor 2n3906

    Abstract: 2N3906 transistor 2N3906 2N3906-BULK 2N3906BU 2N3906 APPLICATION 2n3906 hie 2N3904 2N3906-TAP MMBT3906
    Text: 2N3906 VISHAY Vishay Semiconductors Small Signal Transistor PNP Features • PNP Silicon Epitaxial Planar Transistor switching and amplifier applications. • As complementary type, the NPN transistor 2N3904 is recommended. • On special request, this transistor is also manufactured in the pin configuration TO-18.


    Original     		PDF 2N3906 2N3904 OT-23 MMBT3906. 2N3906-BULK D-74025 01-Sep-04 pin configuration NPN transistor 2n3906 2N3906 transistor 2N3906 2N3906BU 2N3906 APPLICATION 2n3906 hie 2N3906-TAP MMBT3906

    2N3906 JEDEC

    Abstract: No abstract text available
    Text: TOSHIBA TRANSISTOR 2N3906 SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER S illiA X . APPLICATIONS. FEATURES : . Low Leakage Current : ICEV=~50nA(Max.), lBEV=50nA(Max.) @ V c e =-30V, VBe =3V . Excellent DC Current Gain Linearity


    OCR Scan     		PDF 2N3906 -50mA, SC-43 2N3904 300ns 2N3906 JEDEC

    2N3906 toshiba

    Abstract: No abstract text available
    Text: TOSHIBA 2N3906 Transistor _U nit in m m Silicon PNP Epitaxial Type SlI M A X . For General Purpose Switching and Amplifier Applications Features • Low Leakage Current - ICEV = -50nA Max. , lßB\/ — 50nA (Max.) @ VCE = -30V, VBE = 3V • Excellent DC Current Gain Linearity


    OCR Scan     		PDF 2N3906 -50nA -50mA, 2N3904 2N3906 toshiba

    2N3906 hie

    Abstract: 1N916 2N3904 2N3906 KEC 2N3906
    Text: SEMICONDUCTOR TECHNICAL DATA 2N3906 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : Ic E x = -5 0 n A M a x . , lB L = ~ 5 0 n A (M ax .) @ V Ce = -3 0 V , V eb = -3 V . • Excellent DC Current Gain Linearity.


    OCR Scan     		PDF 2N3906 -50nA -50mA, 2N3904. 300ns 1N916 20/xs 300//S, 2N3906 hie 2N3904 2N3906 KEC 2N3906

    PNP switching transistor 2N3906 mhz

    Abstract: 2n3904 950 transistor 2n3906 2n3906 PNP transistor DC current gain PNP switching transistor 2N3906 2n3906 specification
    Text: Philips Semiconductors Product specification PNP switching transistor 2N3906 FEATURES PINNING • Low current max. 200 mA PIN • Low voltage (max. 40 V). 1 APPLICATIONS DESCRIPTION collector 2 base 3 emitter • High-speed switching in industrial applications.


    OCR Scan     		PDF 2N3904. 2N3906 PNP switching transistor 2N3906 mhz 2n3904 950 transistor 2n3906 2n3906 PNP transistor DC current gain PNP switching transistor 2N3906 2n3906 specification

    transistor 2n3906

    Abstract: PNP switching transistor 2N3906 mhz PNP switching transistor 2N3906 2n3906 PNP transistor DC current gain transistor2n3906 PNP TRANSISTOR SOT54 2n3906 specification 2N3904 2N3906 switching transistor
    Text: Philips Semiconductors Product specification PNP switching transistor 2N3906 FEATURES PINNING • Low current max. 200 mA PIN • Low voltage (max. 40 V). APPLICATIONS DESCRIPTION 1 collector 2 base 3 emitter • High-speed switching in industrial applications.


    OCR Scan     		PDF 2N3906 2N3904. SC-43 transistor 2n3906 PNP switching transistor 2N3906 mhz PNP switching transistor 2N3906 2n3906 PNP transistor DC current gain transistor2n3906 PNP TRANSISTOR SOT54 2n3906 specification 2N3904 switching transistor

    Untitled

    Abstract: No abstract text available
    Text: 2N3905/3906 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR TO-92 • Collector-Em itter Voltage: V Ceo =40V • C o llector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage


    OCR Scan     		PDF 2N3905/3906 625mW 2N3906 300//s, 7Tb414E 0D2S02M

    2N3906

    Abstract: 2n3905 tr 2n3906 transistor 2N3905 2n3906 PNP transistor DC current gain 3906 pnp 2N3906 PNP transistor
    Text: 2N3905/3906 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Cotlector-Em itter Voltage: V c e o “ 4 0 V • Collector Dissipation: Pc max «625mW ABSOLUTE MAXIMUM RATINGS (TA- 2 5 t ) C haracteristic Collector-Base Voltage Collector-Em itter Voltage


    OCR Scan     		PDF 2N3905/3906 625mW 2N3905 2N3906 2N3900MHz -10mA tr 2n3906 transistor 2N3905 2n3906 PNP transistor DC current gain 3906 pnp 2N3906 PNP transistor

    2N3906

    Abstract: 3906 pnp 2n3906 PNP transistor DC current gain transistor c 3906
    Text: 2N 3905/3906 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-Emitter Voltage: V Ce o = 4 0 V • Collector Dissipation: Pc max =625mW TO -92 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage


    OCR Scan     		PDF 625mW 2N3906 --10m 3906 pnp 2n3906 PNP transistor DC current gain transistor c 3906

    PNP switching transistor 2N3906

    Abstract: 2N3906V PNP switching transistor 2N3906 mhz 2N3906 transistor by philips
    Text: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET 2N3906 PNP switching transistor 1999 Apr 23 Product specification Supersedes data of 1997 Jun 20 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification PNP switching transistor 2N3906 FEATURES


    OCR Scan     		PDF 2N3906 2N3904. 115002/00/03/pp8 PNP switching transistor 2N3906 2N3906V PNP switching transistor 2N3906 mhz 2N3906 transistor by philips

    KEC 2N3906

    Abstract: 2N3906 transistor 2N3
    Text: SEM ICONDUCTOR 2N3906 TECHN ICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : I ce-,—-50nA Max. , IBL=-50nA(Max.) D IM A -jä @V Ce=-3 OV, V EB=-3 V. G- 1 • Excellent D C Current Gain Linearity.


    OCR Scan     		PDF 2N3906 ---50nA -50nA -50mA, KEC 2N3906 2N3906 transistor 2N3