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    2N3810 DIE Search Results

    2N3810 DIE Result Highlights (6)

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    HMC8410CHIPS-SX Analog Devices Die Sales Visit Analog Devices Buy
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    HMC459-SX Analog Devices I.C., amp Die Visit Analog Devices Buy
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    2N3810 DIE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N3810

    Abstract: 2N3810A IC-100A IC100A
    Text: 2N3810 2N3810A DUAL PNP SILICON TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3810 and 2N3810A types are dual PNP silicon transistors manufactured by the epitaxil planar process utilizing two individual chips mounted in a


    Original     		PDF 2N3810 2N3810A 2N3810 2N3810A 100Hz, 2N3810) 2N3810A) x10-4 IC-100A IC100A

    Untitled

    Abstract: No abstract text available
    Text: 2N3810 2N3810A SILICON DUAL PNP TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3810 and 2N3810A are dual silicon PNP transistors manufactured by the epitaxial planar process utilizing two individual chips mounted in a hermetically sealed metal case designed


    Original     		PDF 2N3810 2N3810A 2N3810 2N3810) 2N3810A)

    2n3810

    Abstract: 2N3799 2N3811 2N2605 2N3789 2N3798 2n3810 datasheet 2C2605 2N2604
    Text: Data Sheet No. 2C2605 Generic Packaged Parts: Chip Type 2C2605 Geometry 0220 Polarity NPN 2N2604, 2N2605, 2N3798, 2N3799, 2N3810, 2N3811 Chip type 2C2605 by Semicoa Semiconductors provides performance similar to these devices. Product Summary: APPLICATIONS: Designed for high


    Original     		PDF 2C2605 2N2604, 2N2605, 2N3798, 2N3799, 2N3810, 2N3811 2C2605 2n3810 2N3799 2N3811 2N2605 2N3789 2N3798 2n3810 datasheet 2N2604

    Untitled

    Abstract: No abstract text available
    Text: 2N3810 Silicon PNP Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Matched Dual transistors • PNP silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3810J • JANTX level (2N3810JX)


    Original     		PDF 2N3810 MIL-PRF-19500 2N3810J) 2N3810JX) 2N3810JV) 2N3810JS) MIL-STD-750 MIL-PRF-19500/336 25x10

    2N3810 JANS

    Abstract: No abstract text available
    Text: 2N3810 Silicon PNP Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Matched Dual transistors • PNP silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3810J • JANTX level (2N3810JX)


    Original     		PDF 2N3810 MIL-PRF-19500 2N3810J) 2N3810JX) 2N3810JV) 2N3810JS) MIL-STD-750 MIL-PRF-19500/336 25x10 2N3810 JANS

    2N3810

    Abstract: 2N3810J 2N3810JS 2N3810JV 2N3810JX 2N3810 DIE
    Text: 2N3810 Silicon PNP Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Matched Dual transistors • PNP silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3810J • JANTX level (2N3810JX)


    Original     		PDF 2N3810 MIL-PRF-19500 2N3810J) 2N3810JX) 2N3810JV) 2N3810JS) MIL-STD-750 MIL-PRF-19500/336 25x10 2N3810 2N3810J 2N3810JS 2N3810JV 2N3810JX 2N3810 DIE

    2N3810

    Abstract: 2N3810L 2N3810U 2N3811 2N3811L 2N3811U 2N3810 JANTXV 2N3811 JANTX
    Text: The documentation and process conversion measures necessary to comply with this document shall be completed by 1 July 2009. INCH-POUND MIL-PRF-19500/336K w/AMENDMENT 1 1 April 2009 SUPERSEDING MIL-PRF-19500/336K 25 April 2008 PERFORMANCE SPECIFICATION SHEET


    Original     		PDF MIL-PRF-19500/336K 2N3810, 2N3810L, 2N3810U, 2N3811, 2N3811L, 2N3811U, 2N3810 2N3810L 2N3810U 2N3811 2N3811L 2N3811U 2N3810 JANTXV 2N3811 JANTX

    2N3726

    Abstract: 2N2453 2N3806 2N2919A 2N2060 2N2060A 2N2223 2N2223A 2N2453A 2N2480
    Text: Dual Transistors TO-78 Case PD @ TA=25oC=600mW Total Both Die Equal Power TYPE NO. DESCRIPTION IC (mA) VCBO (V) VCEO (V) hFE (V) @ IC @ VCE (mA) (V) VCE (SAT) (V) @ IC (mA) fT (MHz) MATCHING hFE VBE *TYP MAX MIN MIN MIN MAX MIN % 2N2060 NPN AMPL/SWITCH 500


    Original     		PDF 600mW 2N2060 2N2060A 2N2223 2N2223A 2N240 2N4016 2N5794 2N5796 MD708 2N3726 2N2453 2N3806 2N2919A 2N2060 2N2060A 2N2223 2N2223A 2N2453A 2N2480

    2N3806

    Abstract: 2N2453 2N3726 "low noise" npn 2N2060 2N2060A 2N2223 2N2223A 2N2453A 2N2480
    Text: Dual Transistors TO-78 Case PD @ TA=25oC=600mW Total Both Die Equal Power TYPE NO. DESCRIPTION IC (mA) VCBO (V) VCEO (V) hFE @ IC @ VCE (mA) (V) VCE (SAT) (V) @ IC (mA) fT (MHz) MATCHING hFE VBE *TYP MAX MIN MIN MIN MAX MIN % (mV) 2N2060 NPN AMPL/SWITCH


    Original     		PDF 600mW 2N2060 2N2060A 2N2223 2N2223A 2N2453 2N4016 2N5794 2N5796 MD708 2N3806 2N2453 2N3726 "low noise" npn 2N2060 2N2060A 2N2223 2N2223A 2N2453A 2N2480

    MD8003

    Abstract: MD7005
    Text: Dual Transistors TO-78 Case PD @ TA=25oC=600mW Total Both Die Equal Power TYPE NO. DESCRIPTION IC (mA) VCBO (V) VCEO (V) hFE @ IC @ VCE (mA) (V) VCE (SAT) (V) @ IC (mA) fT (MHz) MATCHING hFE VBE *TYP MAX MIN MIN MIN MAX MIN % (mV) 2N2060 NPN AMPL/SWITCH


    Original     		PDF 600mW 2N2060 2N2060A 2N2223 2N2223A 2N2453 2N2453A 2N2480 2N2480A 2N2639 MD8003 MD7005

    2n3810 datasheet

    Abstract: 2N3806 2N3726 2N2453 2N2453A 2N4016 2n4854 to-78 10 amp npn power transistors 2n2913 2N2060 MD6100
    Text: Dual Transistors TO-78 Case PD @ TA=25oC=600mW Total Both Die Equal Power TYPE NO. DESCRIPTION IC (mA) VCBO (V) VCEO (V) hFE @ IC @ VCE (mA) (V) VCE (SAT) (V) @ IC (mA) fT (MHz) MATCHING hFE VBE *TYP MAX MIN MIN MIN MAX MIN % (mV) 2N2060 NPN AMPL/SWITCH


    Original     		PDF 600mW 2N2060 2N2060A 2N2223 2N2223A 2N2453 MD7001 MD7002 MD7002A MD7002B 2n3810 datasheet 2N3806 2N3726 2N2453 2N2453A 2N4016 2n4854 to-78 10 amp npn power transistors 2n2913 2N2060 MD6100

    2N3807

    Abstract: 2N3806 2N3808 2N3806A 2N3811 JANTX K/2N3806
    Text: 2N3806,A thru 2N3809,A 2N3810*,A 2N3811*,A *also available as JAN, JANTX, JANTXV PNP SILICON DUAL AMPLIFIER TRANSISTOR RATINGS Collector-Em itter Voltage Collector-Base Voltage Emitter-Base Voltage Collector C u rren t - Continuous SYMBOL ^CEO ^CBO ^EBO Ic


    OCR Scan     		PDF 2N3806 2N3809 2N3810* 2N3811* xAdcN3808 2N3810 2N3810A 2N3808 2N3807 2N3806A 2N3811 JANTX K/2N3806

    2N3810

    Abstract: 2N3806 2n3808 LTADC 2N3811A 2N3807 2n3811 2N3810A 2n3806 transistor
    Text: 2N3806 thru 2N3810,A 2N3811,A SOLID STATE INC 46 FARRAND STREET BLOOMFIELD, NEW JERSEY 07003 www.solidstateinc.com MAXIMUM RATINGS Rating Sym bol Value U n it Collector-Em itter Voltage v CE0 60 Vdc Collector-Base Voltage VcBO 60 Vdc Emitter-Base Voltage vebo


    OCR Scan     		PDF 2N3806 2N3810 2N3811 2N3810, 2n3808 LTADC 2N3811A 2N3807 2N3810A 2n3806 transistor

    2n3810

    Abstract: 2n3811 2n3808
    Text: MOTOROLA SC 1EE D I b3b?2S4 000ti37fc> I | XSTRS/R F 2N3806, A - a 4? - * ? thru 2N3811, A CASE 654-07, STYLE 1 Collector 1 7 Collector M A X IM U M R A T IN G S Symbol Value Unit Collector-Emitter Voltage VCEO 60 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage


    OCR Scan     		PDF 000ti37fc> 2N3806, 2N3811, 2N3810, 2N3811 2N3808 2N3810/11 2N3810A 2N3806 2n3810 2n3811

    2n2453

    Abstract: No abstract text available
    Text: Dual Transistors TO-78 Case P q @ T/\=25°C=600m W Total Both Die Equal Power DESCRIPTION " TYPE NO. I v CBO VCEO (V) 00 h =E @ lc <mA) @ V cE (V) v c e (s ; I T ) (V) 'C (mA) h (MHz) I *TYP MIN MAT<; h in g h FE v Be MIN MIN MIN MAX NPN AMPL/SWITCH 500


    OCR Scan     		PDF 2N2060 2N2060A 2N2223 2N2223A 2N2453 2N2453A 2N2480 2N2480A 2N2639 2N2640

    N248

    Abstract: 2N2453 2N3726 2N3806 2N2060 2N2060A 2N2223 2N2223A 2N2453A 2N2639
    Text: Dual Transistors TO-78 Case P q @ T/^=25°C=600mW Total Both Die Equal Power TYPE NO. DESCRIPTION •c (mA) v CBO VCEO (V) (V) h =E @ lc @ Vce <mA) (V) VCE(S/kT) >C (V) (mA) *T (MHz) *TYP MIN MAT«IH IN G h FE VBE MAX MIN MAX 500 100 50 150 10 5.0 MAX


    OCR Scan     		PDF 600mW 2N2060 2N2060A 2N2223 2N2223A 2N2453 2N2453A N2480 N2480A 2N3811 N248 2N3726 2N3806 2N2639

    Untitled

    Abstract: No abstract text available
    Text: Dual Transistors TO-78 Case P q @ TA=25°C=600mW Total Both Die Equal Power TYPE NO. DESCRIPTION •c (mA) VCBO VCEO (V) (V) h @«C (mA) MAX MIN MIN MIN MAX 2N2060 NPN AMPL/SWITCH 500 100 60 50 150 2N2060A NPN AMPLVSWITCH 500 100 60 50 150 2N2223 NPN AMPL7SWITCH


    OCR Scan     		PDF 600mW 2N2060 2N2060A 2N2223 2N2223A 2N2453 2N2453A 2N24B0 2N2480A 2N2639

    Untitled

    Abstract: No abstract text available
    Text: D a ta S h e e t N o. 2 C 2 6 0 5 Is L SEMICONDUCTORS Chip Type 2C2605 G e n e ric P a c k a g e d P arts: Geometry 0220 Polarity NPN 2N 26 0 4 , 2N 2 6 0 5 , 2N 3 7 9 8 , 2N 3 7 9 9 , 2 N 3 8 1 0, 2 N 3 8 1 1 1 8 M IL S - Chip type 2C2605 by Semicoa Semi­


    OCR Scan     		PDF 2C2605 2C2605 2N2604, 2N2605, 2N3789, 2N3799, 2N3810, 2N3811

    2N2453A

    Abstract: No abstract text available
    Text: Dual Transistors TO-78 Case PD TA=25°C=600mW Total Both Die Equal Power TYPE NO. DESCRIPTION •c v CBO VCEO (n»A) (V) (V) h|=E @lc @ VCE (mA) (V) MATCHING VCE(SAT )® 'C (mA) M (MHz) h FE VBE % 10 <mV) 5.0 3.0 10 5.0 MAX 1.2 50 *TYP MIN 60 150 10 5.0


    OCR Scan     		PDF 600mW 300OW 2N4854* 2N4937 2N4938 2N4939 2N6502 MD984 MD985* MD986 2N2453A

    MD8002

    Abstract: 2n2903
    Text: Dual Transistors TO-78 Case P q @ T ^=2 5°C =6 0 0m W Total Both Die Equal Power TYPE NO. DESCRIPTION «C v CBO v CEO (mA) (V) (V) hl=E IC ® V CE (mA) (V) VCE(SV T ) ® ' C <V) ' MAX (mA) ' % (MHz) MATCHING Hf e V BE *TYP MIN % <">V) MIN MAX NPN AMPL/SWITCH


    OCR Scan     		PDF 2N2060 2N2060A 2N2223 2N2223A 2N2453 2N2453A 2N2480 2N2480A 2N2639 2N2640 MD8002 2n2903

    Untitled

    Abstract: No abstract text available
    Text: M A XIM U M RATINGS Symbol MPQ3798 MPQ3799 Unit C o lle cto r-E m itte r Voltage VCEO -4 0 -6 0 Vdc C ollector-Base Voltage VCBO -6 0 Em itter-Base Voltage v EBO - 5 .0 Vdc *C -5 0 m A dc Rating C o lle ctor C u rre n t — C o ntinuous Total Device D issipation


    OCR Scan     		PDF MPQ3798 MPQ3799 MPQ3798 MPQ3799* O-116

    transistors c 2216

    Abstract: No abstract text available
    Text: M A X IM U M R A T IN G S Symbol MPQ3798 MPQ3799 Unit C o llector-E m itter Voltage VCEO -4 0 -6 0 Vdc Collector-Base Voltage VCBO - 60 Vdc Em itter-Base Voltage vebo - 5.0 Vdc Rating C ollector C urrent — Continuous Total Device Dissipation in Ta - 25CC|1


    OCR Scan     		PDF MPQ3798 MPQ3799 MPQ3799* O-116 MPQ3799 transistors c 2216

    8B473

    Abstract: 7003AB D7003 2N3810 MOTOROLA 2n3810
    Text: 'MOTOROLA SC Í X S T R S / R FJ 6367254 D i f | b 3 b 7 S S 4 0 0 8 B 473 T MOTOROLA SC 96D 8 2 4 7 3 D _ 7 XSTRS/R F MAXIM UM RATINGS Symbol Value U nit Collector-Emltter Voltage VCEO 40 Vdc Collector-Base Voltage VcBO SO Vdc Emitter-Base Voltage


    OCR Scan     		PDF 7003AB MD7003 MQ7003 8B473 D7003 2N3810 MOTOROLA 2n3810

    D7003

    Abstract: 2N3810 B 342 Dc MD7003
    Text: MOTOROLA SC XS T R S /R F i pc n B , 15E D I t3b?5Sq QOflbSbl M I MAXIMUM RATINGS • Rating Symbol Value U nit Collector-Emitter Voltage VCEO 40 Vdc Collector*Base Voltage Vc b o 50 Vdc Emitter-Base Voltage vebo 5.0 Vdc 'c 50 mAdc Collector Current — Continuous


    OCR Scan     		PDF MD7003, MQ7003 MQ7003 MD7003AB MD7003 MD7003/AF D7003 2N3810 B 342 Dc