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    2N358 TRANSISTOR Search Results

    2N358 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    2N358 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    germanium transistors NPN

    Abstract: 2N711 2n2430 2N388 2N1304 2N1892 2N705 2N828 2N1308 2N388A
    Text: GERMANIUM NPN TRANSISTORS Type Yc.O V Max YEBO V Max Ki V Max h rc IcBO @ Y CB V Max Typical @/r rn.-i Cob Pf Max fab MHZ Min 14' 6.0 14' 9.0 Pack Outline Power Dissipation @25°C MW NPN 2N356A 2N357 2N357A 2N358 2N358A 30 20 30 20 30 20 20 20 20 20 20 15


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    2N356A 2N357 2N357A 2N358 2N358A 2N366 2N377 2N377A 2N385 germanium transistors NPN 2N711 2n2430 2N388 2N1304 2N1892 2N705 2N828 2N1308 2N388A PDF

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    Abstract: No abstract text available
    Text: 2N358 Transistors Ge NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)12 V(BR)CBO (V)20 I(C) Max. (A)500m Absolute Max. Power Diss. (W)100m Maximum Operating Temp (øC)85þ I(CBO) Max. (A)5.0u @V(CBO) (V) (Test Condition)5.0 h(FE) Min. Current gain.20 h(FE) Max. Current gain.50


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    Untitled

    Abstract: No abstract text available
    Text: GERMANIUM NPN TRANSISTORS Type y' CBO y yEBO y M ax M ax Ki 1 CBO @y c B y M ax M ax y mA Typical Cob Pf M ax fa b MHZ M in 14' 6.0 14' 9.0 Pack Outline Power Dissipation @ 25°C MW NPN 2N356A 2N357 2N357A 2N358 2N358A 30 20 30 20 30 20 20 20 20 20 20 15 20


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    2N356A 2N357 2N357A 2N358 2N358A 2N366 2N377 2N377A 2N385 PDF

    2n3565 equivalent transistor

    Abstract: 2n3565 transistor 2N3565 transistor 2n358 2N3565 NPN Transistor 2N4240 2n358 TRANSISTOR TA2511 2N3565 pin 2N3583-2N3585
    Text: HARRIS SEMICOND SECTOR 2N3583-2N3585, 2N4240 SLE D • M302271 □□HD43S T43 H H A S File Number 138 High-Voltage Silicon N-P-N Transistors For High-Speed Switching and Linear-Amplifier Applications Features: ■ Freedom from second breakdown • Economy types for ac/dc circuits


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    2N3583-2N3585, 2N4240 M302271 HD43S 2N3583» 2N3584» 2N3585» 2N4240» 2N3584 2N3585. 2n3565 equivalent transistor 2n3565 transistor 2N3565 transistor 2n358 2N3565 NPN Transistor 2N4240 2n358 TRANSISTOR TA2511 2N3565 pin 2N3583-2N3585 PDF

    transistor 2n358

    Abstract: 2n4240 2N3585
    Text: 2N3583-2N3585, 2N4240 File N um ber 138 High-Voltage Silicon N-P-N Transistors For H ig h -S p ee d S w itch in g and L in e a r-A m p lifie r A p p licatio n s Features: • F reed om fro m se c o n d bre a k d o w n ■ E c o n o m y type s fo r a c /d c c irc u its


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    2N3583-2N3585, 2N4240 2N3584, 2N3585. transistor 2n358 2n4240 2N3585 PDF

    AC176

    Abstract: AC184 AC127 AC128 2N2635 AC122 GERMANIUM SMALL SIGNAL TRANSISTORS 2N1377 2N634 OC72 2N1924
    Text: ~ - - , - - • - 7 .-«. G E R M A N I U M PO W E R D E V I C E S Fq — - - SDE D . - . ■ . _ _£. _ ^ . - _. . - 3T473?5 00Q05Q? 2 ■ GERMANIUM SMALL SIGNAL TRANSISTORS PRO ELECTRON TYPES


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    3T473 00Q05Q? AC107 AC116 AC117 AC121--IV AC121--V AC121--VI AC121--VII AC122 AC176 AC184 AC127 AC128 2N2635 GERMANIUM SMALL SIGNAL TRANSISTORS 2N1377 2N634 OC72 2N1924 PDF

    transistor 2N4

    Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
    Text: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION


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    2n189

    Abstract: 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152
    Text: INTERNATIONAL TRANSISTOR SUBSTITUTION GUIDEBOOK by KEATS A. PULLEN. Jr., Eng. D. Member of the Scientific Staff, Ballistic Research Laboratories, Aberdeen Proving G rounds Adjunct Professor of Electrical Engineering, Drexel Institute of Technology Author of: Conductance Design of Active Circuits


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    2G101* 2G102* 2G103* 2G109 2G220 2G221 2G222 2G223 2G224 2n189 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152 PDF

    AC127

    Abstract: CV7089 AC125 2SB415 OC71 ad161 cv8615 HJ17D ad142 2N3278
    Text: First Published P’ebruary, 1971 Reprinted, June 71 Reprinted, July 71 Reprinted, January 72 Reprinted, March 72 Reprinted, June 72 Reprinted, August 72 We invite all authors, whether new or well established, to submit manuscripts for pub­ lication. The manuscripts may deal with any


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    2N24A 2N34A 2N38A 2N43A 2N44A 2N59C 2N60A 2N61A 2N61B OC77-309, AC127 CV7089 AC125 2SB415 OC71 ad161 cv8615 HJ17D ad142 2N3278 PDF

    N1702

    Abstract: 2N277 2SA63 2N390A L204A 2N408 TFK 940 OC59 2N374 2n1922
    Text: $1.50 Cat. No. SSH-4 TRANSISTOR SUBSTITUTION HANDBOOK by The H ow ard W . Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York FIRST EDITION FIRST PR IN T IN G — MARCH, 1961 SECOND PR IN T IN G — MARCH, 1961


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    2N34A 2N43A 2N44A 2N59A 2N59B 2N59C 2N60A 2N60B 2N60C 2N61A N1702 2N277 2SA63 2N390A L204A 2N408 TFK 940 OC59 2N374 2n1922 PDF

    RCA H 541

    Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
    Text: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK


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    2n7588

    Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
    Text: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.


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    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


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    2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 PDF

    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


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    Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29 PDF

    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


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    LS 2027 audio amp

    Abstract: ECG transistor replacement guide book free 2sb337 TRANSISTOR REPLACEMENT GUIDE 980510 S9510 2sb508 C24850772 2N339 bc149c
    Text: TABLE OF CONTENTS Introduction. Page 2 How to Use This Book. Page 2 Care and Handling of T ran sisto rs. Page 3


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    T35W

    Abstract: transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d
    Text: NEW PRODUCTS BULLETIN SINGLE-ENDED MOLDED BRIDGES Fig. 1 International Rectifier expands its quality line of highly reliable molded \ bridges with the new 10DB series of 1 amp full-wave silicon bridge rectifiers. The single-ended, in-line configuration is suitable for PC board applications,


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    10DB2P 10DB4P 10DB6P 180B6A T35W transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d PDF

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


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