2N3501J) Search Results
2N3501J) Price and Stock
Microchip Technology Inc KCC2N3501JANSMALL-SIGNAL BJT - Bulk (Alt: JANKCC2N3501) |
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KCC2N3501JAN | Bulk | 18 Weeks | 100 |
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Motorola Semiconductor Products 2N3501JAN |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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2N3501JAN | 412 |
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Motorola Semiconductor Products 2N3501JANTXV |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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2N3501JANTXV | 98 |
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Teledyne Defense Electronics 2N3501JANTX |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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2N3501JANTX | 96 |
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Raytheon 2N3501JAN |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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2N3501JAN | 59 |
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2N3501J) Datasheets (10)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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2N3501J | Semico | Package = TO-39 Level = Jans Vceo (V) = 150 Vcbo (V) = 150 Vebo (V) = 6.0 Ic (A) = 0.30 Power (W) ta = 1 Rtja (C/W) = 175 Tstg/top (C) = -65 to +200 Hfe = 300 VCE(sat) (V) = 0.20 | Original | |||
2N3501JAN |
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Bipolar Transistor, NPN Silicon Small Signal Transistor | Original | |||
2N3501JAN | New England Semiconductor | NPN SILICON TRANSISTOR | Original | |||
2N3501JANS |
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Bipolar Transistor, NPN Silicon Small Signal Transistor | Original | |||
2N3501JANTXV | New England Semiconductor | NPN SILICON TRANSISTOR | Original | |||
2N3501JS | Semico | Package = TO-39 Level = Jans Vceo (V) = 150 Vcbo (V) = 150 Vebo (V) = 6.0 Ic (A) = 0.30 Power (W) ta = 1 Rtja (C/W) = 175 Tstg/top (C) = -65 to +200 Hfe = 300 VCE(sat) (V) = 0.20 | Original | |||
2N3501JTX |
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Bipolar Transistor, NPN Silicon Small Signal Transistor | Original | |||
2N3501JTXV |
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Bipolar Transistor, NPN Silicon Small Signal Transistor | Original | |||
2N3501JV | Semico | Package = TO-39 Level = Jans Vceo (V) = 150 Vcbo (V) = 150 Vebo (V) = 6.0 Ic (A) = 0.30 Power (W) ta = 1 Rtja (C/W) = 175 Tstg/top (C) = -65 to +200 Hfe = 300 VCE(sat) (V) = 0.20 | Original | |||
2N3501JX | Semico | Package = TO-39 Level = Jans Vceo (V) = 150 Vcbo (V) = 150 Vebo (V) = 6.0 Ic (A) = 0.30 Power (W) ta = 1 Rtja (C/W) = 175 Tstg/top (C) = -65 to +200 Hfe = 300 VCE(sat) (V) = 0.20 | Original |