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    2N3329 Search Results

    2N3329 Datasheets (25)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2N3329 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N3329 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N3329 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N3329 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N3329 Unknown Shortform Electronic Component Datasheets Short Form PDF
    2N3329 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N3329 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N3329 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2N3329 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N3329 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2N3329 National Semiconductor Amplifiers Scan PDF
    2N3329 National Semiconductor Pro-Electron Transistor Datasheets Scan PDF
    2N3329 National Semiconductor Shortform National Semiconductor Datasheet Short Form PDF
    2N3329 Siliconix MOSPOWER Design Data Book 1983 Scan PDF
    2N3329 Siliconix FET Design Catalogue 1979 Scan PDF
    2N3329 Solitron Devices Low Power FET, RF Amplifiers, P-Channel FETS Scan PDF
    2N3329 Solitron Devices Low Power Field Effect Transistor, Case Style = TO72, Geometry = FP5.3... Scan PDF
    2N3329 Solitron Devices General Purpose P-Channel FETs Scan PDF
    2N3329 Texas Instruments Discrete Devices 1978 Scan PDF
    2N3329 Texas Instruments Semiconductor and Components Data Book 1967/8 Scan PDF

    2N3329 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2n5268

    Abstract: 2N5267 2N5265 KK4360 2N3329 2N3330 2N3331 2N5021 FP22 to92 2N5266
    Text: BVgss Ciss Type Case Geometry Min Max Number Style V (pF) 2N2608 2N2609 2N3328 2N3329 2N3330 2N3331 2N3332 KK3820 KK4342 KK4343 KK4360 KK4381 KK4382 2N5020 2N5021 KK5033 2N5265 2N5266 2N5267 2N5268 2N5460 2N5461 2N5462 UC451 TO18 TO18 TO72 TO72 TO72 TO72


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    PDF 2N2608 2N2609 2N3328 2N3329 2N3330 2N3331 2N3332 KK3820 KK4342 KK4343 2n5268 2N5267 2N5265 KK4360 2N3329 2N3330 2N3331 2N5021 FP22 to92 2N5266

    TCA780

    Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
    Text: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP


    Original
    PDF 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP TCA780 TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G

    2N3330

    Abstract: 2N3332 2N3331 2n3329
    Text: TYPES 2N3329 THRU 2N3332 P CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS B U L L E T I N N O D L S 644905, M A R C H 1964 FOR SMALL-SIGNAL, LOW-NOISE APPLICATIONS


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    PDF 2N3329 2N3332 2K3329 2N3330 2N333I 2N3331

    2N3329

    Abstract: 2N3330 2N3331 2N3332 2N2843 "Analog Multipliers" 2N2608 2N2608JAN
    Text: S Siliconix P erform ance C u rves PC Se e Section 5 2N3330 • Small-Signal Amplifiers ■ Analog M u ltip liers ■ M odulators b e n e f it s Ease of Am plifier Design I q SS & Gfs Closely Specified 2N3331 ♦ABSO LUTE M A X IM U M R A TIN G S 25°C 2N3329


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    PDF 2N3329 2N3330 2N3331 2N3332 2N3329 2N3330 2N3331 2N3332 2N2843 "Analog Multipliers" 2N2608 2N2608JAN

    2N2608

    Abstract: 2N3329-32 2N3909 2N2843 2N2608CHP 2N2608JAN 2N2843CHP 2N3909CHP 2N284 p-channel jfet
    Text: U & p-channel JFET B designed f o r . . . S ilic o n ix General Purpose Amplifiers and Attenuators TYPE PACKAGE P R IN C IP A L D E V IC E S Single Single Single TO-18 TO-72 Chip 2N 2608, 2N 2608JA N , 2N2843 2N3329-32, 2N3909, V C R 5 P 2N 2608C H P, 2 N2843CH P,


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    PDF 2N2608, 2N2608JAN, 2N2843 2N3329-32, 2N3909, 2N2608CHP, 2N2843CHP, 2N3329CHP-32CHP, 2N3909CHP 2N2608 2N3329-32 2N3909 2N2608CHP 2N2608JAN 2N2843CHP 2N284 p-channel jfet

    2N3330

    Abstract: 2N2498 2N3332 2N2500 2N3329 2N3331 JANTX 2H332 2N2497 2N3330 JANTX 2K333
    Text: I INCH-POUND ! MIL-S-19 500/37 8B 21 June 1990 SUPERSEDING-Mil-S-19500/378A 18 Marrh 1968 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTOR, P-CHANNEL, SILICON, TYPES ZHZ497 THROUGH ZHZ50Q, 2N3329 THROUGH 2N3332, JANTX This s p ecifica tio n is approved for use by a ll Depart­


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    PDF MIL-S-19500/378B MIL-S-19500/378A 2n2497 2n2500, 2n3329 2n3332, MIL-S-19500. 2N3330 2N2498 2N3332 2N2500 2N3331 JANTX 2H332 2N3330 JANTX 2K333

    UC451

    Abstract: No abstract text available
    Text: r a @ y < § T T ATTM,®< LOW P O W E R FIELD E F F E C T T R A N S IS T O R S Type Number Case Style T O - 2N2608 2N2609* 2N3328 2N3329 2N3330 [FDm i Geometry BVgss Min (V) Ciss Max (pF) 18 18 72 72 72 FP22.2 FP22.2 FP22.2 FP5.3 FP5.3 30 30 20 20 20


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    PDF 2N2608 2N2609* 2N3328 2N3329 2N3330 2N3331 2N3332 KK3820 KK4342 KK4343 UC451

    2N5021

    Abstract: 2N5265 2N3331 2N5266 2n5268 2N5460 2n5462 2N2608 2N2609 2N3328
    Text: Type Number Case Style T O - Geometry BVgss Min (V) 2N2608 2N2609» 2N3328 2N3329 2N3330 18 18 72 72 72 FP22.2 FP22.2 FP22.2 FP5.3 FP5.3 2N3331 2N3332 KK3820 KK4342 KK4343 72 72 92 92 92 KK4360 KK4381 KK4382 2N5020 2N5021 [py L O W P O W E R FIELD E F F E C T T R A N S I S T O R S


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    PDF 2N2608 2N2609* 2N3328 2N3329 2N3330 2N3331 2N3332 KK3820 KK4342 2N2500 2N5021 2N5265 2N5266 2n5268 2N5460 2n5462 2N2609

    2N5266

    Abstract: No abstract text available
    Text: ÄTTÄ[L LOW P O W E R FIELD E FFE C T T R A N S IS T O R S ¡[L ÄtMPOJFDIlKi Type Number Case Style (T O - Geometry BVgss Min (V) Ciss Max (PF) Vgs (off) Min Max (V) 2N2608 2N2609» 2N3328 2N3329 2N3330 18 18 72 72 72 FP22.2 FP22.2 FP22.2 FP5.3 FP5.3


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    PDF 2N2608 2N2609» 2N3328 2N3329 2N3330 2N3331 2N3332 KK3820 KK4342 KK4343 2N5266

    2n3329

    Abstract: No abstract text available
    Text: 2N3329 asi P-CHANNEL SILICON JUNCTION FET DESCRIPTION: The 2N3329 is Designed for Small Signal Low Noise Amplifier and Oscillator Applications. MAXIMUM RATINGS Id -10 mA V ds 10 V V qs 20 V P diss 300 mW @ Tc = 25 °C T stg -65 to +200°C Tj -65 to +200°C


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    PDF 2N3329 2N3329

    2N3329

    Abstract: No abstract text available
    Text: 2N3329 P-CHANNEL SILICON JUNCTION FET DESCRIPTION: The 2N3329 is Designed for Small Signal Low Noise Amplifier and Oscillator Applications. MAXIMUM RATINGS PACKAGE STYLE TO- 72 Id -1O mA V ds 1O V Vgs 2O V Pd iss 3OO mW @ Te # 25 0C Ts t g -65 to '2OO0C Tj


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    PDF 2N3329

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    KE4416

    Abstract: ST5025 SE5055 CS9013 N3055 transistor bf 175 2N6375
    Text: DH3467C Quad PNP Core Driver DESCRIPTION CONNECTION DIAGRAM The DH3467C consists of four 2N3467 type PNP transistors mounted in a 14-pin molded dual-in-line package. The device is primarily intended fo r core memory application requiring operating currents


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    PDF DH3467C 2N3467 14-pin O-106 O-220 KE4416 ST5025 SE5055 CS9013 N3055 transistor bf 175 2N6375

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


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    TIS34

    Abstract: tis58 TIS25 TIS59 2n2386 2N3328 TIS42 2N2499 2N3820 silec
    Text: Field Effect Transistors No. £^ o 1 ! C S o w U “ S ilic o n P -C h a n n e l F ie ld Effect S ilic o n N -C h a n n el F ield Effect S ilic o n N -C h a n n el D ual M atched Field Effect Germ anium P Channel Field Effect V DG V !e mA p p p p p p 20 20


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    PDF 2N2386 2N2497 N2498 N2499 2N2S00 2N3328 2N3330 2N3331 N3332 2N3573 TIS34 tis58 TIS25 TIS59 2N3328 TIS42 2N2499 2N3820 silec

    2N2844

    Abstract: 2N2843 2N3329-32 2N2608 2N2608CHP 2N2608JAN 2N2843CHP 2N3909 2N3909CHP siliconix jfets
    Text: 2N2844 2N2843 S p-channel JFETs designed fo r Siliconix . Performance Curves PC PD See Section 5 • Small-Signal Amplifiers B E N E F IT S • Low Supply Voltage Operation v GS off T ypically 1.2 V T O -1 8 See S e c tio n 7 • A B S O L U T E M A X IM U M R A T IN G S (25°C)


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    PDF 2N2843 2N2844 2N2844 2N2843 2N3329-32 2N2608 2N2608CHP 2N2608JAN 2N2843CHP 2N3909 2N3909CHP siliconix jfets

    F245B

    Abstract: BF256 2N3820 BC264 U1898E BFS21A MPF105 vergleichsliste BF320 TIS69
    Text: FACHHÄNDLER INFORMATION DISKRETE PRODUKTE FETs Warum FET-Vorzugsprodukte? Weil: • 20% unserer Produkte mehr als 80% aller Anforderungen erfüllen. ■ wir unsere Produkte mittels Computer analysiert haben nach: größtem Bedarf notwendigen Parametern niedrigsten Kosten


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    PDF 100-MHz F245B BF256 2N3820 BC264 U1898E BFS21A MPF105 vergleichsliste BF320 TIS69

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


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    PDF 11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680

    IN5314

    Abstract: IN5309 IN5286 2N5163 2NB906 IN5313 U1897E 2N3456 UC4250 in5297
    Text: 95D 02926 8368602 SOLITRON DEVICES INC SOLITRON DEVICES INC "ts f - z- f de I " a a tf tto a ooos^ab ~ Devices, Inc L O W P O W E R F IE L D E F F E C T T R A N S I S T O R S Type N um ber C ase Style TO- Avol Min V/mV lb Max (nA) Ios. Max (nA) Vos Max (mV)


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    PDF UC4250* UC42500 MIL-STD-883C, 19S00/ 2N7109* SDF8200 FMN35 SDF8201Â FMNZ35 SDF8202 IN5314 IN5309 IN5286 2N5163 2NB906 IN5313 U1897E 2N3456 UC4250 in5297

    2NB906

    Abstract: IN5313 2NB90 IN5286 IN5296 solitrondevices IN5302 in5287 IN5306 2N5902 TO-92
    Text: 8 3 6 8 6 0 2 SO L ITRON D E V I C E S INC T - 2- 95D 0 2 9 2 6 S0LITR0N DEVICES INC D F Jfl3 b ö t,G 2 2.jr OOOSTEb M o [ M i r ©ÄTTÄ[L ( L O W P O W E R FIELD EFFECT T R A N S IS T O R S Devices, Inc © [P U C W O O lM tL Type Number Case Style


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    PDF UC4250» UC4250C» MIL-STD-883C, 2N2609 2N3821 2N3822 2N3823 2N4856 2N4857 2N48S8 2NB906 IN5313 2NB90 IN5286 IN5296 solitrondevices IN5302 in5287 IN5306 2N5902 TO-92

    2N3909

    Abstract: 2N2608 2N2608CHP 2N2608JAN 2N2843 2N2843CHP
    Text: 2N 3909 p-channel JFET designed for S S ilico n ix Performance Curves PC See Section 5 . • G eneral Purpose A m plifiers TO-72 See Section 7 •A B S O L U TE M A X IM U M R A TIN G S 25°C Gate-Drain or Gate-Source Voltage (Note 1 ) . 20 V


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    PDF 2N3909 2N3909 2N2608 2N2608CHP 2N2608JAN 2N2843 2N2843CHP

    AN73-1 fet

    Abstract: jfet AN73 VCR2N equivalent AN73-1 2N284 2N2843 2N2608 2N2608CHP 2N2608JAN 2N2843CHP
    Text: VCR7N VCR5P VCR4N VCR3P voltage-control led resistor FETs designed for . . . nt •Small Signal Attenuators ■ Filters ■Am plifier Gain Control ■Oscillator Amplitude Control o S itò B o n i x rfo rm a n c e PC PE C u rv e s S e e TO-18 Set Section 7


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    Untitled

    Abstract: No abstract text available
    Text: S P R A G U E / S E MI C Ô ND 8 5 1 4 0 1 9 SPR A G U E. GROUP =13 D • ÔS1 3ÔS G SEM IC O N D S/IC S DDQ3 L 17 T 93D 0 3 6 1 7 J ■ 7 I . ? 9 , 7 C METAL-CASE JUNCTION FIELD-EFFECT TRANSISTORS_ P-Channel JFETs General-Purpose Device Types


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    PDF 2N2386 2N2497 2N2498 2N2499 2N2500 2N2608 2N2609 2N3329 2N3330 2N3331

    C MOS 4000

    Abstract: 2N4393 S0212 2N6658 Siliconix JFET 3n146 P1087 2N4302 CROSS REFERENCE 2n6661 3N157
    Text: si6halFET Product Specifications 7-io N 72 72 18 18 18 72 72 72 10 10 5.0 5.0 5.0 15 15 15 S ilic o n ix _ _ - 30 30 30 30 20 20 8.0 6.0 11.5 6.5 3.2 5.0 5.0 9.5. 20 20 40 40 40 30 30 30 0.9 2.0 0.2 0.44 1.0 2.0 5.0 1.0 2.0 0.5 0.1 3.0 I5.0 15.0 _ _ _ _ _


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    PDF P1087 P1087-18 SD210 SD211 S0212 SD213 SD214 SD215 U1897 U1897-18 C MOS 4000 2N4393 S0212 2N6658 Siliconix JFET 3n146 P1087 2N4302 CROSS REFERENCE 2n6661 3N157