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    2N2920L Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N2920L Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N2920L Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N2920L Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N2920LJAN New England Semiconductor NPN SMALL SIGNAL UNITIZED DUAL SILICON TRANSISTOR Original PDF
    2N2920LJANS New England Semiconductor NPN SMALL SIGNAL UNITIZED DUAL SILICON TRANSISTOR Original PDF
    2N2920LJANTX New England Semiconductor NPN SMALL SIGNAL UNITIZED DUAL SILICON TRANSISTOR Original PDF
    2N2920LJANTXV New England Semiconductor NPN SMALL SIGNAL UNITIZED DUAL SILICON TRANSISTOR Original PDF

    2N2920L Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2N2920

    Abstract: 2N2929 2N2919
    Text: TECHNICAL DATA 2N2919 JTX, JTXV 2N2919L JTX, JTXV 2N2920 JTX, JTXV 2N2920L JTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/355 NPN SILICON SMALL-SIGNAL TRANSISTORS MAXIMUM RATINGS Ratings Symbol All Types Units Collector-Emitter Voltage 60 Vdc VCEO


    Original     		2N2919 2N2919L 2N2920 2N2920L MIL-PRF-19500/355 2N2929, 2N2920, 2N2929 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N2920L Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)70 I(C) Max. (A)30m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)200õ I(CBO) Max. (A)2.0nØ @V(CBO) (V) (Test Condition)45 V(CE)sat Max. (V).3 @I(C) (A) (Test Condition)1m


    Original     		2N2920L PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N2920L+JAN Transistors Si NPN Lo-Pwr BJT Military/High-RelY V BR CEO (V)60 V(BR)CBO (V)70 I(C) Max. (A)30m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)200õ I(CBO) Max. (A)2.0nØ @V(CBO) (V) (Test Condition)45 V(CE)sat Max. (V).3 @I(C) (A) (Test Condition)1m


    Original     		2N2920L PDF

    2N2920

    Abstract: 2N2919 transistor 2N2919 JANS2N2920 2N2920U JANTXV 2N2920 2N2920L 2N2919L 2N2919L JANTXV 2N2919L JANTX
    Text: TECHNICAL DATA NPN SMALL SIGNAL UNITIZED DUAL SILICON TRANSISTOR Qualified per MIL-PRF-19500/355 Devices 2N2919 2N2919L 2N2919U Qualified Level JAN JANTX JANTXV JANS 2N2920 2N2920L 2N2920U MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage


    Original     		MIL-PRF-19500/355 2N2919 2N2919L 2N2919U 2N2920 2N2920L 2N2920U 2N2919, 2N2920, 2N2920 2N2919 transistor 2N2919 JANS2N2920 2N2920U JANTXV 2N2920 2N2920L 2N2919L 2N2919L JANTXV 2N2919L JANTX PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N2920L+JANTXV Transistors Si NPN Lo-Pwr BJT Military/High-RelY V BR CEO (V)60 V(BR)CBO (V)70 I(C) Max. (A)30m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)200õ I(CBO) Max. (A)2.0nØ @V(CBO) (V) (Test Condition)45 V(CE)sat Max. (V).3 @I(C) (A) (Test Condition)1m


    Original     		2N2920L PDF

    2n2920

    Abstract: 2N2919 2N2920A 2N2929
    Text: TECHNICAL DATA 2N2919 JAN, JTX, JTXV 2N2919L JAN, JTX, JTXV 2N2920 JAN, JTX, JTXV 2N2920L JAN, JTX, JTXV 2N2920U JAN, JTX, JTXV MIL-PRF QML DEVICES Processed per MIL-PRF-19500/355 NPN SILICON SMALL-SIGNAL UNITIZED DUAL TRANSISTORS MAXIMUM RATINGS Ratings Collector-Emitter Voltage


    Original     		2N2919 2N2919L 2N2920 2N2920L 2N2920U MIL-PRF-19500/355 2N2920A 2N2929 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N2920L+JANTX Transistors Si NPN Lo-Pwr BJT Military/High-RelY V BR CEO (V)60 V(BR)CBO (V)70 I(C) Max. (A)30m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)200õ I(CBO) Max. (A)2.0nØ @V(CBO) (V) (Test Condition)45 V(CE)sat Max. (V).3 @I(C) (A) (Test Condition)1m


    Original     		2N2920L PDF

    2N2920U

    Abstract: No abstract text available
    Text: The documentation and process conversion measures necessary to comply with this document shall be completed by 12 June 2013. INCH-POUND MIL-PRF-19500/355R 12 March 2013 SUPERSEDING MIL-PRF-19500/355P 9 December 2011 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, UNITIZED DUAL TRANSISTOR, NPN, SILICON,


    Original     		MIL-PRF-19500/355R MIL-PRF-19500/355P 2N2919, 2N2920, 2N2919L, 2N2920L, 2N2919U, 2N2920U, 2N2920U PDF

    2SK847

    Abstract: 2N3305 2SK734 2N2807A 2N2970 2n2968 2n2709 2SK733 2N2971 2SK794
    Text: STI Type: 2SK696 Notes: Breakdown Voltage: 1000 Continuous Current: 3 RDS on Ohm: 4.0 Trans Conductance Mhos: 1.2 Trans Conductance A: Gate Threshold min: Gate Threshold max: Resistance Switching ton: Resistance Switching toff: Resistance Switching ID: Case Style: TO-247


    Original     		2SK696 O-247 2SK719 2SK696A O-205AD/TO-39: 2N3374 2N3352 2SK847 2N3305 2SK734 2N2807A 2N2970 2n2968 2n2709 2SK733 2N2971 2SK794 PDF

    2N2920

    Abstract: 2n2919 2N2920U lake transistor transistor 2N2919 2N2919U
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298


    Original     		MIL-PRF-19500 2N2919 2N2920 2N2919L 2N2920L 2N2919U 2N2920U 2N2920U) T4-LDS-0202 2N2920 2N2920U lake transistor transistor 2N2919 PDF

    2N2920

    Abstract: 355N 2N2920L 2N2920U 325 MMC pins 2N2920 2N2919 2N2919L JANHCB2N2919
    Text: The documentation and process conversion measures necessary to comply with this document shall be completed by 5 May 2009. INCH-POUND MIL-PRF-19500/355N 5 February 2009 SUPERSEDING MIL-PRF-19500/355M 16 March 2007 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, UNITIZED DUAL TRANSISTOR, NPN, SILICON,


    Original     		MIL-PRF-19500/355N MIL-PRF-19500/355M 2N2919, 2N2920, 2N2919L, 2N2920L, 2N2919U, 2N2920U, MIL-PRF-19500. 2N2920 355N 2N2920L 2N2920U 325 MMC pins 2N2920 2N2919 2N2919L JANHCB2N2919 PDF