2N2920 Search Results

Contextual Info: m 2N2920A \ \ SILICON NPN DUAL TRANSISTOR DESCRIPTION: The 2N2920A is a Dual Matched Transistor for General Purpose High Gain Low Noise Differential Amplifier Applications. PACKAGE STYLE TO-78 MAXIMUM RATINGS lc 30 mA V ce 60 V P diss 500 mW @ TA = 25 °C

2N2920ADCSM

Contextual Info: 2N2920ADCSM Dimensions in mm inches . 1 4 A 6 5 6.22 ± 0.13 (0.245 ± 0.005) 0.23 rad. (0.009) A = 1.27 ± 0.13 (0.05 ± 0.005) LCC2 (MO-041BB) Pinouts Pin 1 – Collector 1 Pin 2 – Base 1 Pin 3 – Base 2 Parameter 4.32 ± 0.13 (0.170 ± 0.005) 3 2 1.40 ± 0.15

AN-31

Abstract: Op Amp Circuit Collection Reference Vishay Ultronix Grand Junction CO Q81 Q81, 1K, 3500 ppm "multiple aperture Window Discriminator" noise detector using instrumentation amplifier CO Q81 zero crossing detector in rectifier circuit Vishay Q81
Contextual Info: National Semiconductor Application Note 31 September 2002 Note: National Semiconductor recommends replacing 2N2920 and 2N3728 matched pairs with LM394 in all application circuits. Section 1—Basic Circuits Inverting Amplifier Non-Inverting Amplifier Op Amp Circuit Collection

2N2919

Abstract: 2N2642
Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL DUAL NPN TRANSISTOR TO-78 PACKAGE TO-78 JEt 7 DEVICE TYPE 2N2060 2N2223 2N2223A 2N2453 2N2453A 2N2480A 2N2639 2N2640 2N2641 2N2642 2N2643 2N2644 2N2652 2N2652A 2N2721 2N2722 2N2903 2N2915 2N2916 2N2917 2N2918 2N2919 2N2920

soc2920ahrb

Abstract: 2N2920AHR marking code SMD ic N1 smd transistor st smd diode marking code all ic datasheet in one pdf file NV SMD TRANSISTOR smd diode order marking code stmicroelectronics transistor marking N1 TRANSISTOR SMD MARKING CODES
Contextual Info: 2N2920AHR Hi-Rel NPN dual matched bipolar transistor 60 V - 0.03 A Features BVCEO 60 V IC max 0.03 A HFE at 10 V - 150 mA > 300 Operating temperature range -65°C to +200°C • Hi-Rel NPN dual matched bipolar transistor ■ Linear gain characteristics ■

Contextual Info: 20 STERN AVE. SPRINGFIELD. NEW JERSEY 07081 U.SA TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 2N2920 MECHANICAL DATA Dimensions in mm (inches) DUAL NPN PLANAR TRANSISTORS IN TO77 PACKAGE ' '^0.7110.021) tit 10.034) TO-77 PACKAGE PIN 1 - Collector 1

common emitter amplifier

Abstract: 2N2920DCSM 2N2920
Contextual Info: 2N2920DCSM DUAL NPN TRANSISTORS IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches 3 2 2.54 ± 0.13 (0.10 ± 0.005) 1.40 ± 0.15 (0.055 ± 0.006) 1.65 ± 0.13 (0.065 ± 0.005)

2N2920

Abstract: 2N2929 2N2919
Contextual Info: TECHNICAL DATA 2N2919 JTX, JTXV 2N2919L JTX, JTXV 2N2920 JTX, JTXV 2N2920L JTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/355 NPN SILICON SMALL-SIGNAL TRANSISTORS MAXIMUM RATINGS Ratings Symbol All Types Units Collector-Emitter Voltage 60 Vdc VCEO

Contextual Info: 2N2920DCSM DUAL NPN TRANSISTORS IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches 3 2 2.54 ± 0.13 (0.10 ± 0.005) 1.40 ± 0.15 (0.055 ± 0.006) 1.65 ± 0.13 (0.065 ± 0.005)

2N2919

Abstract: 2C2920KV CP2920 2N2920 MIL-PRF-19500L SEM 2006 G5241
Contextual Info: Data Sheet No. CP2920 2N2919 2N2920 Chip Type 2C2920KV Geometry 0307 Polarity NPN 18 MILS 18 MILS B E E 18 MILS B REF: MIL-PRF-19500L/355 18 MILS Chip type 2C2920KV by Semicoa Semiconductors meets the standards for MIL-PRF-19500L Appendix G, Class K and provides performance

Contextual Info: mi Vrrr= mi S E M E 2N2920DCSM LAB DUAL NPN TRANSISTORS IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches 1 .4 0 ± 0 .1 5 (0 .0 5 5 ± 0 .0 0 6) 2 .2 9 ± 0.20 (0 .09 ± 0 .008)

Contextual Info: 2N2920L Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)70 I(C) Max. (A)30m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)200õ I(CBO) Max. (A)2.0nØ @V(CBO) (V) (Test Condition)45 V(CE)sat Max. (V).3 @I(C) (A) (Test Condition)1m

Contextual Info: 2N2920+JAN Transistors Si NPN Lo-Pwr BJT Military/High-RelY V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)30m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)2.0nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2N2920L+JAN Transistors Si NPN Lo-Pwr BJT Military/High-RelY V BR CEO (V)60 V(BR)CBO (V)70 I(C) Max. (A)30m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)200õ I(CBO) Max. (A)2.0nØ @V(CBO) (V) (Test Condition)45 V(CE)sat Max. (V).3 @I(C) (A) (Test Condition)1m

MOTOROLA 2n2920

Abstract: 2N2920 2N2920JAN
Contextual Info: MOTOROU Order this document by 2N2920JANID SEMICONDUCTOR TECHNICAL DATA @ 2N2920JAN, JTX, JTXV, JANS Processed per MIL4-I ,111, t ,11111 411 .,.:,>$’ \.>.l , c*\~ ~!.?,:$,! a- 9500/355 ual N,PNSilicon Small+ ignal Transistors .!. 3 Unit Vdc Vdo VEBO Emitter+ase Vohge

2N2920

Abstract: 2N2920 applications JANTXV 2N2920 2N2920J 2N2920JS 2N2920JV 2N2920JX
Contextual Info: 2N2920 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Matched Dual transistors • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N2920J • JANTX level (2N2920JX)

2N2920

Abstract: 2N2919 transistor 2N2919 JANS2N2920 2N2920U JANTXV 2N2920 2N2920L 2N2919L 2N2919L JANTXV 2N2919L JANTX
Contextual Info: TECHNICAL DATA NPN SMALL SIGNAL UNITIZED DUAL SILICON TRANSISTOR Qualified per MIL-PRF-19500/355 Devices 2N2919 2N2919L 2N2919U Qualified Level JAN JANTX JANTXV JANS 2N2920 2N2920L 2N2920U MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage

Contextual Info: 2N2920L+JANTXV Transistors Si NPN Lo-Pwr BJT Military/High-RelY V BR CEO (V)60 V(BR)CBO (V)70 I(C) Max. (A)30m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)200õ I(CBO) Max. (A)2.0nØ @V(CBO) (V) (Test Condition)45 V(CE)sat Max. (V).3 @I(C) (A) (Test Condition)1m

2N3729

Abstract: 2N4072 2N2947 2n4073
Contextual Info: 8134693 SEMICQA_ qp PE | 5 1 3 * ^ 3 ~f _ □□□□13b b | DIFFERENTIAL AND DUAL AMPLIFIERS Cont’d Type NPN 2N3729 2N2453 2N2480 2M2480A 2N2639 2N2640 2N2641 2N2642 2N2643 2N2913 2N2914 2N2915 2N2916 2N2917 2N2918 2N2453A 2N2919 2N2920 2N2652

2N2920

Contextual Info: 2N2920 SILICON NPN DUAL TRANSISTOR DESCRIPTION: The 2N2920 is a Dual Matched Transistor for General Purpose High Gain Low Noise Differential Amplifier Applications. PACKAGE STYLE TO-7 3O mA O m Ie < MAXIMUM RATINGS 6O V Pdiss SOO mW @ Ta ' (S OC Pdiss 1SOO mW @ T c ' (S OC

2N4045

Abstract: 2N2914 2N4880
Contextual Info: small signal transistors 74 , I SILICON NPN MONOLITHIC DUALS I TYPE PACKAGE 2N2913 2N2914 2N2915 2N2916 2N2917 2N2918 2N2919 2N2920 2N4044 2N4045 2N4100 2N4878 2N4879 2N4880 TO-78 TO-78 TO-78 TO-78 TO-78 TO-78 TO-78 TO-78 TO-78 TO-78 TO-78 TO-71 TO-71 TO-71

anti-log

Abstract: sensistor 2N2920 logarithmic applications sensistor Q81 2N3728 log and antilog amplifier Widlar 2N2920 Vishay Ultronix Grand Junction CO Q81 Vishay Q81
Contextual Info: Note: National Semiconductor recommends replacing 2N2920 and 2N3728 matched pairs with LM394 in all application circuits. One of the most predictable non-linear elements commonly available is the bipolar transistor. The relationship between collector current and emitter base voltage is precisely logarithmic from currents below one picoamp to currents above

Contextual Info: SILICON DUAL MATCHED NPN TRANSISTORS 2N2920ADCSM • Dual Silicon NPN Matched Transistors • Hermetic Ceramic Surface Mount Package • Designed For Low Noise, Differential Amplifier Applications. • Screening Options Available ABSOLUTE MAXIMUM RATINGS Each Side, TA = 25°C unless otherwise stated

2n2920

Abstract: MOTOROLA 2n2920 MOTOROLA 2n2919 2n2919 2n2915
Contextual Info: MOTOROLA SC XSTRS/R 12E F I b3b?2S4 ooabdaa □ | 2N2913 thru 2N2920 MAXIMUM RATINGS Rating Sym bol 2N2913 thru 2N2918 2N2919 2N2920 Collector-Emitter Voltage VCEO 45 60 Vdc Collector-Base Voltage VCBO 45 60 Vdc Emitter-Base Voltage vebo Collector Current — Continuous