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    2N2917 DUAL TRANSISTOR Search Results

    2N2917 DUAL TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    2N2917 DUAL TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N2913 2N2915 2N2917 MECHANICAL DATA Dimensions in mm inches 8.51 (0.335) 9.40 (0.370) DUAL NPN PLANAR TRANSISTORS IN TO77 PACKAGE 6.10 (0.240) 6.60 (0.260) 7.75 (0.305) 8.51 (0.335) 12.7 (0.500) Min. 1.02 (0.040) Max. 0.41 (0.016) 0.53 (0.021) 5.08 (0.200)


    Original     		2N2913 2N2915 2N2917 100mA PDF

    2N2919

    Abstract: 2N2642
    Text: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL DUAL NPN TRANSISTOR TO-78 PACKAGE TO-78 JEt 7 DEVICE TYPE 2N2060 2N2223 2N2223A 2N2453 2N2453A 2N2480A 2N2639 2N2640 2N2641 2N2642 2N2643 2N2644 2N2652 2N2652A 2N2721 2N2722 2N2903 2N2915 2N2916 2N2917 2N2918 2N2919 2N2920


    OCR Scan     		2N2060 2N2223 2N2223A 2N2453 2N2453A 2N2480A 2N2639 2N2640 2N2641 2N2642 2N2919 PDF

    Transistor 78 L 05

    Abstract: 2N2223A 2N2453 2N2453A 2N2639 2N2919 2N2642 2N2060 2N2223 2N2480A
    Text: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL DUAL NPN TRANSISTOR TO-78 PACKAGE TO-78 Jgr / DEVICE TYPE 2N2060 2N2223 2N2223A 2N2453 2N2453A 2N2480A 2N2639 2N2640 2N2641 2N2642 2N2643 2N2644 2N2652 2N2652A 2N2721 2N2722 2N2903 2N2915 2N2916 2N2917 2N2918 2N2919 2N2920


    OCR Scan     		2N2060 2N2223 2N2223A 2N2453 2N2453A 2N2480A 2N2639 2N2640 2N2641 2N2642 Transistor 78 L 05 2N2919 PDF

    2N2913

    Abstract: 2N2915
    Text: 2N2913 2N2915 2N2917 MECHANICAL DATA Dimensions in mm inches 8.51 (0.335) 9.40 (0.370) DUAL NPN PLANAR TRANSISTORS IN TO77 PACKAGE 6.10 (0.240) 6.60 (0.260) 7.75 (0.305) 8.51 (0.335) 12.7 (0.500) Min. 1.02 (0.040) Max. 0.41 (0.016) 0.53 (0.021) 5.08 (0.200)


    Original     		2N2913 2N2915 2N2917 2N2913DCSM" 2N2913DCSM 2N2913DCSM-JQR-B 5/10u 60MHz PDF

    2N2915

    Abstract: 2N2917 2N2913 2n2917 dual transistor
    Text: 2N2913 2N2915 2N2917 MECHANICAL DATA Dimensions in mm inches 8.51 (0.335) 9.40 (0.370) DUAL NPN PLANAR TRANSISTORS IN TO77 PACKAGE 6.10 (0.240) 6.60 (0.260) 7.75 (0.305) 8.51 (0.335) 12.7 (0.500) Min. 1.02 (0.040) Max. 0.41 (0.016) 0.53 (0.021) 5.08 (0.200)


    Original     		2N2913 2N2915 2N2917 100mA 2N2915 2N2917 2N2913 2n2917 dual transistor PDF

    Q2T2905

    Abstract: SN3351 3N208 q2t2222 TIS25 2N3808 2N3680 2N3809 2N381 T05 n3806
    Text: Multi Transistors Dual Bipolar M ATCHIN G SELECT!roR HFE 20% HFE VBE VBE 5 mV RATINGS 10% 3 mV U N M ATCH ED 2N2641 2N2644 2N2913 2N2914 2N2223* 2N2640* 2N2643* 2N2917 2N2918 2N2972 2N2973 2N2976 2N2977 2N3349* 2N3352* 2N3806 2N3807 2N4854 2N4855 2N3348*


    OCR Scan     		2N2060t 2N2223* 2N2223At 100/xA 2n2641 2n2640* 2N2639t 2n2644 2n2643* 2N2642I Q2T2905 SN3351 3N208 q2t2222 TIS25 2N3808 2N3680 2N3809 2N381 T05 n3806 PDF

    Untitled

    Abstract: No abstract text available
    Text: <Se.mi-Cond\j.ctoi tPioducti, {Jnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 2N2913 2N2915 2N2917 MECHANICAL DATA Dimensions in mm (inches) DUAL NPN PLANAR TRANSISTORS IN TO77 PACKAGE / 0 . 7 1 (O.OJ8)


    Original     		2N2913 2N2915 2N2917 100uA PDF

    2n2917 dual transistor

    Abstract: 2N2917
    Text: Datasheet 2N2917 C o Gi vI tI PU f il li 1l T" W Semiconductor Cord . W l l l l W l l l i v V V w NPN SILICON DUAL TRANSISTOR l 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-78 CASE Manufacturers of World Class Discrete Semiconductors


    OCR Scan     		2N2917 2N2917 100hA 20MHz 140kHz 200Hz 100ulA 100nA, 100mA, 2n2917 dual transistor PDF

    2N2920

    Abstract: 2n2917 2n2915 2N297 2N2919 2N2913 2n2914 2N2920 applications 2N2972 MOTOROLA 2n2920
    Text: DUAL NPN SILICON @ e e e e e e ANNULAR*TRANSISTORS . . . especially designed for low-level, differential amplifier applications. @ low-noise e s High Breakdown Voltage BVCEO= 70 Vdc typical o Very High Beta Guaranteed ,.$:>. ,.,p~ .*. s Beta Match as tight as 0.9 to 1


    Original     		2N2979 2N2920 2N2919-20 2N2978-79 2N2972-77 45BVEBO 2N2913 2N2972 2N2919, 2N2920, 2N2920 2n2917 2n2915 2N297 2N2919 2n2914 2N2920 applications MOTOROLA 2n2920 PDF

    Transistor 78 L 05

    Abstract: 2N2919 130L 2N2903 2N2916
    Text: N EW ENGLAND SEMICONDUCTOR SMALL SIGNAL DUAL NPN TRANSISTOR TO-78 PACKAGE TO-78 / 24 DEVICE TYPE ^CEO sus VOLTS Ic (max) AMPS hpE @ Ic/ ^CE min/max @ mA/V ^CE(sat) @ I q/I b V @ mA/mA /t (MHz) 2N2060 60 0.5 30/90@0.1/5 1.2@50/5 P 15 2N2223 60 0.5 25/150@0.1/5


    OCR Scan     		2N2060 2N2223 2N2223A 2N2453 2N2453A 2N2480A 2N2639 2N2640 2N2641 2N2642 Transistor 78 L 05 2N2919 130L 2N2903 2N2916 PDF

    2n2920

    Abstract: 2n2915a 12S3C 2n2916 2N2919A 2N2979 2N2972 2N2913 alc100 2920A
    Text: TYPES 2N2913 THRU 2N2920. 2N2915A. 2N2916A, 2N2919A, 2N2920A. DUAL N-P-N SILICON TRANSISTORS B U L L E T IN N O . D L -S 6 9 1 1 1 6 5 , M A R C H 1 9 6 9 A B R O A D F A M IL Y OF D U A L T R A N S IS T O R S R E C O M M E N D E D FO R • • • • Differential Amplifiers


    OCR Scan     		2N2913 2N2920. 2N2915A. 2N2916A, 2N2919A, 2N2920A. 2n2920 2n2915a 12S3C 2n2916 2N2919A 2N2979 2N2972 alc100 2920A PDF

    2N3053 NPN transistor

    Abstract: 2n2917 dual transistor 2N2906AQF 2N2907AQF 2N2917
    Text: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES Type_No 2N2893 2N2894 2N2894A 2N2894ACSM 2N2894AQF 2N2894CSM 2N2894DCSM 2N2895 2N2896 2N2904 2N2904A 2N2904AL 2N2904L 2N2905 2N2905A 2N2905AL 2N2905L 2N2906 2N2906 CECC 2N2906A 2N2906A CECC 2N2906ACSM


    OCR Scan     		250mW 80min 30min 40min 4/30m 10/10m 360mW 2N3053 NPN transistor 2n2917 dual transistor 2N2906AQF 2N2907AQF 2N2917 PDF

    FMT1061

    Abstract: MD918A se3002 fairchild to-106 FTR129A 2N3571 2N3572 2N5770 FMT1061A FMT2090
    Text: FAIRCHILD TRANSISTORS SMALL SIGNAL NPN RF-IF AMPLIFIER AND OSCILLATOR TRANSISTORS BY ASCENDING FREQUENCY (Cont’d) Item PG [GM A] (O S C POW ER) dB @ f Min MHz D EV ICE NO. vCEO V Min *T MHz Min Cob [C ce] (C cb) pF Max (0.8) Pd ta NF dB Max @f MHz 25°C


    OCR Scan     		FMT2090 O-120 2N5770 PN3563 PN918 SE3002 O-106 FMT1061 FMT1061A FTR129A FMT1061 MD918A se3002 fairchild to-106 FTR129A 2N3571 2N3572 2N5770 PDF

    2N3050

    Abstract: 2N2804 2N2640
    Text: "SEMICONDUCTOR TECHNOLOGY GSE D | fll3t.45fl □□□0230^4 | r ^ f - 27 ËHÏ' SILICO N DUAL DIFFERENTIAL AMPLIFIER TRANSISTORS STIType Polarity Pow er Dissipation Total @ 2 5 °C ( M in .) hF E lc MATCHING v CE0 (volts) (Min.) (Max.) mA hFE(%) MW v b e (m v )


    OCR Scan     		2N2Q60 2N2060A 2N2060B 2N2223 2N2223A 2N2453 2N2639 2N2640 2N2641 2N2642 2N3050 2N2804 PDF

    MD8002

    Abstract: 2n2903
    Text: Dual Transistors TO-78 Case P q @ T ^=2 5°C =6 0 0m W Total Both Die Equal Power TYPE NO. DESCRIPTION «C v CBO v CEO (mA) (V) (V) hl=E IC ® V CE (mA) (V) VCE(SV T ) ® ' C <V) ' MAX (mA) ' % (MHz) MATCHING Hf e V BE *TYP MIN % <">V) MIN MAX NPN AMPL/SWITCH


    OCR Scan     		2N2060 2N2060A 2N2223 2N2223A 2N2453 2N2453A 2N2480 2N2480A 2N2639 2N2640 MD8002 2n2903 PDF

    2n3810 datasheet

    Abstract: 2N3806 2N3726 2N2453 2N2453A 2N4016 2n4854 to-78 10 amp npn power transistors 2n2913 2N2060 MD6100
    Text: Dual Transistors TO-78 Case PD @ TA=25oC=600mW Total Both Die Equal Power TYPE NO. DESCRIPTION IC (mA) VCBO (V) VCEO (V) hFE @ IC @ VCE (mA) (V) VCE (SAT) (V) @ IC (mA) fT (MHz) MATCHING hFE VBE *TYP MAX MIN MIN MIN MAX MIN % (mV) 2N2060 NPN AMPL/SWITCH


    Original     		600mW 2N2060 2N2060A 2N2223 2N2223A 2N2453 MD7001 MD7002 MD7002A MD7002B 2n3810 datasheet 2N3806 2N3726 2N2453 2N2453A 2N4016 2n4854 to-78 10 amp npn power transistors 2n2913 2N2060 MD6100 PDF

    2N3726

    Abstract: 2N2453 2N3806 2N2919A 2N2060 2N2060A 2N2223 2N2223A 2N2453A 2N2480
    Text: Dual Transistors TO-78 Case PD @ TA=25oC=600mW Total Both Die Equal Power TYPE NO. DESCRIPTION IC (mA) VCBO (V) VCEO (V) hFE (V) @ IC @ VCE (mA) (V) VCE (SAT) (V) @ IC (mA) fT (MHz) MATCHING hFE VBE *TYP MAX MIN MIN MIN MAX MIN % 2N2060 NPN AMPL/SWITCH 500


    Original     		600mW 2N2060 2N2060A 2N2223 2N2223A 2N240 2N4016 2N5794 2N5796 MD708 2N3726 2N2453 2N3806 2N2919A 2N2060 2N2060A 2N2223 2N2223A 2N2453A 2N2480 PDF

    2n2453

    Abstract: No abstract text available
    Text: Dual Transistors TO-78 Case P q @ T/\=25°C=600m W Total Both Die Equal Power DESCRIPTION " TYPE NO. I v CBO VCEO (V) 00 h =E @ lc <mA) @ V cE (V) v c e (s ; I T ) (V) 'C (mA) h (MHz) I *TYP MIN MAT<; h in g h FE v Be MIN MIN MIN MAX NPN AMPL/SWITCH 500


    OCR Scan     		2N2060 2N2060A 2N2223 2N2223A 2N2453 2N2453A 2N2480 2N2480A 2N2639 2N2640 PDF

    N248

    Abstract: 2N2453 2N3726 2N3806 2N2060 2N2060A 2N2223 2N2223A 2N2453A 2N2639
    Text: Dual Transistors TO-78 Case P q @ T/^=25°C=600mW Total Both Die Equal Power TYPE NO. DESCRIPTION •c (mA) v CBO VCEO (V) (V) h =E @ lc @ Vce <mA) (V) VCE(S/kT) >C (V) (mA) *T (MHz) *TYP MIN MAT«IH IN G h FE VBE MAX MIN MAX 500 100 50 150 10 5.0 MAX


    OCR Scan     		600mW 2N2060 2N2060A 2N2223 2N2223A 2N2453 2N2453A N2480 N2480A 2N3811 N248 2N3726 2N3806 2N2639 PDF

    Untitled

    Abstract: No abstract text available
    Text: Dual Transistors TO-78 Case P q @ TA=25°C=600mW Total Both Die Equal Power TYPE NO. DESCRIPTION •c (mA) VCBO VCEO (V) (V) h @«C (mA) MAX MIN MIN MIN MAX 2N2060 NPN AMPL/SWITCH 500 100 60 50 150 2N2060A NPN AMPLVSWITCH 500 100 60 50 150 2N2223 NPN AMPL7SWITCH


    OCR Scan     		600mW 2N2060 2N2060A 2N2223 2N2223A 2N2453 2N2453A 2N24B0 2N2480A 2N2639 PDF

    MD8003

    Abstract: MD7005
    Text: Dual Transistors TO-78 Case PD @ TA=25oC=600mW Total Both Die Equal Power TYPE NO. DESCRIPTION IC (mA) VCBO (V) VCEO (V) hFE @ IC @ VCE (mA) (V) VCE (SAT) (V) @ IC (mA) fT (MHz) MATCHING hFE VBE *TYP MAX MIN MIN MIN MAX MIN % (mV) 2N2060 NPN AMPL/SWITCH


    Original     		600mW 2N2060 2N2060A 2N2223 2N2223A 2N2453 2N2453A 2N2480 2N2480A 2N2639 MD8003 MD7005 PDF

    MD8003

    Abstract: 2N2453 2N2916 2N3726 MD7003A MD6001 MD6001F MD6002 MD6002F MD6003
    Text: MULTIPLE SMALL-SIGNAL TRANSISTORS continued Dual Transistors (continued) ID ? 2 2 Subscript Ref. Point hFE1 MD6001 MD6001F MD6002 MD6002F CG CG CG CG .575 0.35 .575 0.35 A A A A 30 30 30 30 MD6003 MD6003F MD6100 MD6100F MD7000 MD7001 CA CA CA CA NA PA .575 A


    OCR Scan     		MD6001 MD6001F MD6002 MD6002F MD6003 2N2917 2N2918 2N2919 2N2920 2N3045 MD8003 2N2453 2N2916 2N3726 MD7003A PDF

    2N3806

    Abstract: 2N2453 2N3726 "low noise" npn 2N2060 2N2060A 2N2223 2N2223A 2N2453A 2N2480
    Text: Dual Transistors TO-78 Case PD @ TA=25oC=600mW Total Both Die Equal Power TYPE NO. DESCRIPTION IC (mA) VCBO (V) VCEO (V) hFE @ IC @ VCE (mA) (V) VCE (SAT) (V) @ IC (mA) fT (MHz) MATCHING hFE VBE *TYP MAX MIN MIN MIN MAX MIN % (mV) 2N2060 NPN AMPL/SWITCH


    Original     		600mW 2N2060 2N2060A 2N2223 2N2223A 2N2453 2N4016 2N5794 2N5796 MD708 2N3806 2N2453 2N3726 "low noise" npn 2N2060 2N2060A 2N2223 2N2223A 2N2453A 2N2480 PDF

    2N2453A

    Abstract: No abstract text available
    Text: Dual Transistors TO-78 Case PD TA=25°C=600mW Total Both Die Equal Power TYPE NO. DESCRIPTION •c v CBO VCEO (n»A) (V) (V) h|=E @lc @ VCE (mA) (V) MATCHING VCE(SAT )® 'C (mA) M (MHz) h FE VBE % 10 <mV) 5.0 3.0 10 5.0 MAX 1.2 50 *TYP MIN 60 150 10 5.0


    OCR Scan     		600mW 300OW 2N4854* 2N4937 2N4938 2N4939 2N6502 MD984 MD985* MD986 2N2453A PDF