1N916
Abstract: 2N2904U
Text: SEMICONDUCTOR 2N2904U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES 1 6 2 5 3 4 DIM A A1 B A C : ICEX=50nA Max. , IBL=50nA(Max.) A1 C Low Leakage Current @VCE=30V, VEB=3V. D Excellent DC Current Gain Linearity.
|
Original
|
PDF
|
2N2904U
1N916
2N2904U
|
Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR 2N2904U1 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES DIM A A1 B 1 6 2 5 3 4 A C : ICEX=50nA Max. , IBL=50nA(Max.) A1 C ・Low Leakage Current @VCE=30V, VEB=3V. D ・Excellent DC Current Gain Linearity.
|
Original
|
PDF
|
2N2904U1
100mA
|
Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR 2N2904U1 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR B B1 DIM A A1 B 6 2 5 3 4 C A A1 C 1 D B1 C H 0.65 H 0.2+0.10/-0.05 0-0.1 _ 0.1 0.9 + T 0.15+0.1/-0.05 D G T MILLIMETERS _ 0.20 2.00 + _ 0.1 1.3 + _ 0.1 2.1 + _ 0.1 1.25 + G 1. Q 1 2. Q 2
|
Original
|
PDF
|
2N2904U1
|
2N2904U1
Abstract: No abstract text available
Text: SEMICONDUCTOR 2N2904U1 MARKING SPECIFICATION US6 PACKAGE 1. Marking method Laser Marking ZB 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark ZB 2N2904U1 hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.
|
Original
|
PDF
|
2N2904U1
2N2904U1
|
Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR 2N2904U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES 1 6 2 5 3 4 DIM A A1 B A C : ICEX=50nA Max. , IBL=50nA(Max.) A1 C ・Low Leakage Current @VCE=30V, VEB=3V. D ・Excellent DC Current Gain Linearity.
|
Original
|
PDF
|
2N2904U
100mA
|
Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR 2N2904U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR B B1 6 2 5 3 4 DIM A A1 B C A A1 C 1 D B1 C H 0.65 H 0.2+0.10/-0.05 0-0.1 _ 0.1 0.9 + T 0.15+0.1/-0.05 D G T MILLIMETERS _ 0.20 2.00 + _ 0.1 1.3 + _ 0.1 2.1 + _ 0.1 1.25 + G 1. Q 1 2. Q 1
|
Original
|
PDF
|
2N2904U
|
2N2904U
Abstract: No abstract text available
Text: SEMICONDUCTOR 2N2904U MARKING SPECIFICATION US6 PACKAGE 1. Marking method Laser Marking ZA 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark ZA 2N2904U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.
|
Original
|
PDF
|
2N2904U
2N2904U
|
1N916
Abstract: 2N2904U1
Text: SEMICONDUCTOR 2N2904U1 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES DIM A A1 B 1 6 2 5 3 4 A C : ICEX=50nA Max. , IBL=50nA(Max.) A1 C Low Leakage Current @VCE=30V, VEB=3V. D Excellent DC Current Gain Linearity.
|
Original
|
PDF
|
2N2904U1
1N916
2N2904U1
|
MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: SEM ICONDUCTOR 2N2904U1 TECHN ICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E • Low Leakage Current 33 : ICEjj=50nA Max. , IBL=50nA(Max.) □ •o @Vce=30V, Veb=3V. 4 ~ ~ |d • Excellent DC Current Gain Linearity.
|
OCR Scan
|
PDF
|
2N2904U1
Collector-Emitter008.
300/iS,
|
Untitled
Abstract: No abstract text available
Text: SEM IC O N D U C T O R 2N2904U TECHN ICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SW ITCHING APPLICATION. FEATURES □ • Low Leakage Current * s |- h : ICEjj=50nA Max. , I BL=50nA(Max.) 4~~jp 3Q @Vce=30V, Veb=3V. • Excellent DC Current Gain Linearity.
|
OCR Scan
|
PDF
|
2N2904U
S300/-&
|