Untitled
Abstract: No abstract text available
Text: 2N2857 Available on commercial versions Qualified Levels: JAN, JANTX, and JANTXV RF and MICROWAVE DISCRETE LOW POWER TRANSISTORS Qualified per MIL-PRF-19500/343 DESCRIPTION The 2N2857 is a military qualified silicon NPN transistor also available in commercial version ,
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2N2857
MIL-PRF-19500/343
2N2857
2N2857.
T4-LDS-0223,
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2N2857
Abstract: 2N2857 JANTXV
Text: 2N2857 Available on commercial versions Qualified Levels: JAN, JANTX, and JANTXV RF and MICROWAVE DISCRETE LOW POWER TRANSISTORS Qualified per MIL-PRF-19500/343 DESCRIPTION The 2N2857 is a military qualified silicon NPN transistor also available in commercial version ,
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2N2857
MIL-PRF-19500/343
2N2857.
T4-LDS-0223,
2N2857 JANTXV
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2N2857 JANTX
Abstract: 2n2857 common base amplifier 2N2857 JANTXV 2N2857 TO72 package 2N2857 JAN SILICON AMPLIFIER TRANSISTOR Qualified per MIL-PRF
Text: 2N2857 Available on commercial versions Qualified Levels: JAN, JANTX, and JANTXV RF and MICROWAVE DISCRETE LOW POWER TRANSISTORS Qualified per MIL-PRF-19500/343 DESCRIPTION The 2N2857 is a military qualified silicon NPN transistor also available in commercial version ,
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2N2857
MIL-PRF-19500/343
2N2857.
T4-LDS-0223,
2N2857 JANTX
2n2857 common base amplifier
2N2857 JANTXV
TO72 package
2N2857 JAN
SILICON AMPLIFIER TRANSISTOR Qualified per MIL-PRF
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2N2857 semicoa
Abstract: No abstract text available
Text: 2N2857 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • Ultra-High frequency transistor • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N2857J
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2N2857
MIL-PRF-19500
2N2857J)
2N2857JX)
2N2857JV)
2N2857JS)
MIL-STD-750
MIL-PRF-19500/343
2N2857 semicoa
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2N2857
Abstract: 2N2857 JANTXV MRF 110 2N2857 JANTX 2N2857 JAN low noise transistors microwave
Text: Silicon Bipolar Low Noise Microwave Transistors 2N2857 Case Style TO-72 CAN 509 Features • High Gain (19dB Typical @ 450 MHz) • Low Noise Figure At Low Ic • Gold Metalization • Useful To 700 MHz • Can be Screened to JANTX, JANTXV Equivalent Levels
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2N2857
MIL-MRF19500
2N2857
2N2857 JANTXV
MRF 110
2N2857 JANTX
2N2857 JAN
low noise transistors microwave
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2N2857 semicoa
Abstract: 2N2857J 2N2857 JANTXV 2N2857 2N2857JS 2N2857JV 2N2857JX
Text: 2N2857 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • Ultra-High frequency transistor • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N2857J
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2N2857
MIL-PRF-19500
2N2857J)
2N2857JX)
2N2857JV)
2N2857JS)
MIL-STD-750
MIL-PRF-19500/343
2N2857 semicoa
2N2857J
2N2857 JANTXV
2N2857
2N2857JS
2N2857JV
2N2857JX
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Untitled
Abstract: No abstract text available
Text: 2N2857 Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corporation offers: • Ultra-High frequency transistor • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 • JAN level 2N2857J • JANTX level (2N2857JX)
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2N2857
MIL-PRF-19500
2N2857J)
2N2857JX)
2N2857JV)
2N2857JS)
2N2857JSR)
2N2857JSF)
MIL-STD-750
MIL-PRF-19500/343
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TRANSISTOR 117a
Abstract: No abstract text available
Text: Silicon Bipolar Low Noise Microwave Transistors 2N2857 Case Style TO-72 CAN 509 Features • High Gain (19dB Typical @ 450 MHz) • Low Noise Figure At Low Ic • Gold Metalization • Useful To 700 MHz • Can be Screened to JANTX, JANTXV Equivalent Levels
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2N2857
MIL-MRF19500
TRANSISTOR 117a
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Untitled
Abstract: No abstract text available
Text: 2N2857+JANTXV Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelY V BR CEO (V)15 V(BR)CBO (V)30 I(C) Max. (A)40m Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)200þ I(CBO) Max. (A)10n @V(CBO) (V) (Test Condition)15
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2N2857
Freq200M
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Untitled
Abstract: No abstract text available
Text: 2N2857UB Available on commercial versions Qualified Levels: JAN, JANTX, and JANTXV RF and MICROWAVE DISCRETE LOW POWER TRANSISTORS Qualified per MIL-PRF-19500/343 DESCRIPTION The 2N2857UB is a military qualified silicon NPN transistor also available in commercial
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2N2857UB
MIL-PRF-19500/343
2N2857UB
2N2857.
T4-LDS-0223-1,
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2N2857UB
Abstract: No abstract text available
Text: 2N2857UB Available on commercial versions Qualified Levels: JAN, JANTX, and JANTXV RF and MICROWAVE DISCRETE LOW POWER TRANSISTORS Qualified per MIL-PRF-19500/343 DESCRIPTION The 2N2857UB is a military qualified silicon NPN transistor also available in commercial
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2N2857UB
MIL-PRF-19500/343
2N2857.
T4-LDS-0223-1,
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JANKCA2N2857
Abstract: 343H 2N2857 2N2857 RHA 2n2857 common base amplifier 608C 2N2857UB hewlet 2N2857 JANTXV 2N2857 JANS
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 2 July 2010. MIL-PRF-19500/343J 2 April 2010 SUPERSEDING MIL-PRF-19500/343H 20 March 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW POWER,
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MIL-PRF-19500/343J
MIL-PRF-19500/343H
2N2857
2N2857UB,
MIL-PRF-19500.
JANKCA2N2857
343H
2N2857 RHA
2n2857 common base amplifier
608C
2N2857UB
hewlet
2N2857 JANTXV
2N2857 JANS
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2N2857
Abstract: 2N2857UB JANKCA2N2857 JANHCA2N2857 MIL-PRF-19500/343F 608C
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 8 May 2002. MIL-PRF-19500/343F 8 February 2002 SUPERSEDING MIL-PRF-19500/343E 28 November 2000 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON,
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MIL-PRF-19500/343F
MIL-PRF-19500/343E
2N2857
2N2857UB
2N2857UB
JANKCA2N2857
JANHCA2N2857
MIL-PRF-19500/343F
608C
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2N3810 LCC
Abstract: 2N2222A LCC1 ESCC 5202-001 MCA3201/2B ESCC 5204/002 bul54ah mp2835 ESCC 5201-002 silicon carbide JFET 2n918 die
Text: Space Products Semelab products and processes for space applications SEMELAB | experience and innovation 2 Contents 1. Introduction . 4 2. Programmes Supported . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5
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FM36235
M/0103/CECC/UK
1360/M
VQC-03-003050
VQC-03-003049
U3158
2M8S02
2N3810 LCC
2N2222A LCC1
ESCC 5202-001
MCA3201/2B
ESCC 5204/002
bul54ah
mp2835
ESCC 5201-002
silicon carbide JFET
2n918 die
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MG1007-42
Abstract: MG1020-M16 MSC1075M 1004mp MG1052-30
Text: Power Matters. RF & Microwave Diode and Transistor Products Microsemi RFIS Integrated Solutions RF & Microwave Diode and Transistor Products Within this short form catalog are the combined product selection guides for Microsemi RF Integrated Solutions RFIS business unit RF & microwave diodes and power transistors. RFIS diode products are
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MS4-009-13
MG1007-42
MG1020-M16
MSC1075M
1004mp
MG1052-30
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c5088 transistor
Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154
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1853IMPATT
c5088 transistor
transistor C3207
TLO84CN
sec c5088
IN5355B
D2817A
C3207 transistor
toshiba f630
TLO81CP
MC74HC533N
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transistor K 2056
Abstract: MA42120 K 2056 transistor 2N6665 MA42001-509 2N5054 2n5651 MA42005 MA-42120 2N2857 Model
Text: /yfaom Silicon Low Noise Bipolar T ransistors Features • LOW NOISE THROUGH 2.5 GHz ■ HERMETIC PACKAGE ■ CAN BE SCREENED TO JAN, JANTX, JANTXV LEVELS Description The series of Silicon NPN bipolar transistors are designed for low noise amplifiers in the frequency range of 60 MHz
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MA40285
Abstract: ma4882 MA40150 MA46H201 masw2070g1 MA46H206 MA47203 JANTX2N2857 MA4P9 MA40420
Text: MODEL NUMBER INDEX MODEL NUMBER PAGE 1N5165 .238 1N5166 .238 1N5167 .238 1N5712 .238 1N5713 . 238
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1N5165
1N5166
1N5167
1N5712
1N5713
1N5767
2N2857
2N3570
2N3571
2N3572
MA40285
ma4882
MA40150
MA46H201
masw2070g1
MA46H206
MA47203
JANTX2N2857
MA4P9
MA40420
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2N6665
Abstract: MA42001-509 2N6665-509 MA42181-510 2n5054 RF NPN POWER TRANSISTOR C 10-50 GHZ 2N2857 Model MA42001 ma42 transistor 2N3953
Text: an A M P com pany General Purpose Low Noise Bipolar Transistors Features Case Styles • Low Noise Through 1.5 GHz • Hermetic Package • Can Be Screened to JAN, JANTX, JANTXV Levels Description The series of Silicon NPN bipolar transistors are designed
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SL42E05
M220S
0001fl11
2N6665
MA42001-509
2N6665-509
MA42181-510
2n5054
RF NPN POWER TRANSISTOR C 10-50 GHZ
2N2857 Model
MA42001
ma42 transistor
2N3953
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MA42181-510
Abstract: 2N5054 2N6665-509
Text: M a n A M P icom pany General Purpose Low Noise Bipolar Transistors V3.00 Case Styles Features • Low Noise Through 1.5 GHz • Hermetic Package • Can Be Screened to JAN, JANTX, JANTXV Levels Description The series of Silicon NPN bipolar transistors are designed
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Motorola transistors MRF 947
Abstract: motorola hep cross reference 2N5070 2N5591 MOTOROLA Semicon volume 1 mrf532 transistor equivalents for 2n3866 siemens semiconductor manual Microlab Splitter Specification sheet pt9797
Text: MOTOROLA RF DATA MANUAL Prepared by Technical Information Center M otorola’s leadership position of RF power, small-signal transistors and hybrid amplifiers is by research and new product development coupled with a com plete in-house m anufacturing ca pa b ility in clu d in g silico n g row ing,
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UAA2001
Abstract: MC8500 micromodule m68mm19 1N9388 74ALS643 2N6058 MC145026 2N5160 MOTOROLA MC3340 equivalent pn3402
Text: MOTOROLA Semiconductors THE EUROPEAN MASTER SELECTION 1982 The total num ber of standard Sem iconductor products available from M otorola ex ceeds 15 0 0 0 device types. To most of our custom ers this total presents an overw helm ing choice. The European Master Selection lists approxim ately 4 0 0 0 preferred devices that re
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0HF40
0HF60
0HF80
6FP10
6F100
70HF10
UAA2001
MC8500
micromodule m68mm19
1N9388
74ALS643
2N6058
MC145026
2N5160 MOTOROLA
MC3340 equivalent
pn3402
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triac zd 607
Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.
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SG73/D
triac zd 607
1n5204
CA2820 TRW
2N4427 equivalent bfr91
2N6823
842 317 SO8
BD243 PINOUT
BD529
bf506
BF845
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E421 fet
Abstract: equivalent transistor e176 J2N2608 J2N3821 E112 jfet e420 dual jfet 2N390G TRANSISTOR E421 dual JFET 2N4360 equivalent transistors Teledyne Semiconductor jfet
Text: Discretes from Teledyne Semiconductor In this catalog are listed more than 2000 high-quality diodes, bipolar transistors and JFETs available from Teledyne Semiconductor. Key specifications are included for each device and many are available w ith hi-rel processing to m ilitary specifications.
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O-72P*
O-92X
O-105
O-106
O-106P
E421 fet
equivalent transistor e176
J2N2608
J2N3821
E112 jfet
e420 dual jfet
2N390G TRANSISTOR
E421 dual JFET
2N4360 equivalent transistors
Teledyne Semiconductor jfet
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