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    2N2857 JANTX Price and Stock

    RCA 2N2857JANTXV

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    Quest Components 2N2857JANTXV 28
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    2N2857 JANTX Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: 2N2857 Available on commercial versions Qualified Levels: JAN, JANTX, and JANTXV RF and MICROWAVE DISCRETE LOW POWER TRANSISTORS Qualified per MIL-PRF-19500/343 DESCRIPTION The 2N2857 is a military qualified silicon NPN transistor also available in commercial version ,


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    PDF 2N2857 MIL-PRF-19500/343 2N2857 2N2857. T4-LDS-0223,

    2N2857

    Abstract: 2N2857 JANTXV
    Text: 2N2857 Available on commercial versions Qualified Levels: JAN, JANTX, and JANTXV RF and MICROWAVE DISCRETE LOW POWER TRANSISTORS Qualified per MIL-PRF-19500/343 DESCRIPTION The 2N2857 is a military qualified silicon NPN transistor also available in commercial version ,


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    PDF 2N2857 MIL-PRF-19500/343 2N2857. T4-LDS-0223, 2N2857 JANTXV

    2N2857 JANTX

    Abstract: 2n2857 common base amplifier 2N2857 JANTXV 2N2857 TO72 package 2N2857 JAN SILICON AMPLIFIER TRANSISTOR Qualified per MIL-PRF
    Text: 2N2857 Available on commercial versions Qualified Levels: JAN, JANTX, and JANTXV RF and MICROWAVE DISCRETE LOW POWER TRANSISTORS Qualified per MIL-PRF-19500/343 DESCRIPTION The 2N2857 is a military qualified silicon NPN transistor also available in commercial version ,


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    PDF 2N2857 MIL-PRF-19500/343 2N2857. T4-LDS-0223, 2N2857 JANTX 2n2857 common base amplifier 2N2857 JANTXV TO72 package 2N2857 JAN SILICON AMPLIFIER TRANSISTOR Qualified per MIL-PRF

    Untitled

    Abstract: No abstract text available
    Text: 2N2857 Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corporation offers: • Ultra-High frequency transistor • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 • JAN level 2N2857J • JANTX level (2N2857JX)


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    PDF 2N2857 MIL-PRF-19500 2N2857J) 2N2857JX) 2N2857JV) 2N2857JS) 2N2857JSR) 2N2857JSF) MIL-STD-750 MIL-PRF-19500/343

    2N2857 semicoa

    Abstract: No abstract text available
    Text: 2N2857 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • Ultra-High frequency transistor • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N2857J


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    PDF 2N2857 MIL-PRF-19500 2N2857J) 2N2857JX) 2N2857JV) 2N2857JS) MIL-STD-750 MIL-PRF-19500/343 2N2857 semicoa

    2N2857

    Abstract: 2N2857 JANTXV MRF 110 2N2857 JANTX 2N2857 JAN low noise transistors microwave
    Text: Silicon Bipolar Low Noise Microwave Transistors 2N2857 Case Style TO-72 CAN 509 Features • High Gain (19dB Typical @ 450 MHz) • Low Noise Figure At Low Ic • Gold Metalization • Useful To 700 MHz • Can be Screened to JANTX, JANTXV Equivalent Levels


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    PDF 2N2857 MIL-MRF19500 2N2857 2N2857 JANTXV MRF 110 2N2857 JANTX 2N2857 JAN low noise transistors microwave

    2N2857 semicoa

    Abstract: 2N2857J 2N2857 JANTXV 2N2857 2N2857JS 2N2857JV 2N2857JX
    Text: 2N2857 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • Ultra-High frequency transistor • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N2857J


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    PDF 2N2857 MIL-PRF-19500 2N2857J) 2N2857JX) 2N2857JV) 2N2857JS) MIL-STD-750 MIL-PRF-19500/343 2N2857 semicoa 2N2857J 2N2857 JANTXV 2N2857 2N2857JS 2N2857JV 2N2857JX

    TRANSISTOR 117a

    Abstract: No abstract text available
    Text: Silicon Bipolar Low Noise Microwave Transistors 2N2857 Case Style TO-72 CAN 509 Features • High Gain (19dB Typical @ 450 MHz) • Low Noise Figure At Low Ic • Gold Metalization • Useful To 700 MHz • Can be Screened to JANTX, JANTXV Equivalent Levels


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    PDF 2N2857 MIL-MRF19500 TRANSISTOR 117a

    Untitled

    Abstract: No abstract text available
    Text: 2N2857+JANTXV Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelY V BR CEO (V)15 V(BR)CBO (V)30 I(C) Max. (A)40m Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)200þ I(CBO) Max. (A)10n @V(CBO) (V) (Test Condition)15


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    PDF 2N2857 Freq200M

    Untitled

    Abstract: No abstract text available
    Text: 2N2857UB Available on commercial versions Qualified Levels: JAN, JANTX, and JANTXV RF and MICROWAVE DISCRETE LOW POWER TRANSISTORS Qualified per MIL-PRF-19500/343 DESCRIPTION The 2N2857UB is a military qualified silicon NPN transistor also available in commercial


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    PDF 2N2857UB MIL-PRF-19500/343 2N2857UB 2N2857. T4-LDS-0223-1,

    2N2857UB

    Abstract: No abstract text available
    Text: 2N2857UB Available on commercial versions Qualified Levels: JAN, JANTX, and JANTXV RF and MICROWAVE DISCRETE LOW POWER TRANSISTORS Qualified per MIL-PRF-19500/343 DESCRIPTION The 2N2857UB is a military qualified silicon NPN transistor also available in commercial


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    PDF 2N2857UB MIL-PRF-19500/343 2N2857. T4-LDS-0223-1,

    JANKCA2N2857

    Abstract: 343H 2N2857 2N2857 RHA 2n2857 common base amplifier 608C 2N2857UB hewlet 2N2857 JANTXV 2N2857 JANS
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 2 July 2010. MIL-PRF-19500/343J 2 April 2010 SUPERSEDING MIL-PRF-19500/343H 20 March 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW POWER,


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    PDF MIL-PRF-19500/343J MIL-PRF-19500/343H 2N2857 2N2857UB, MIL-PRF-19500. JANKCA2N2857 343H 2N2857 RHA 2n2857 common base amplifier 608C 2N2857UB hewlet 2N2857 JANTXV 2N2857 JANS

    2N2857

    Abstract: 2N2857UB JANKCA2N2857 JANHCA2N2857 MIL-PRF-19500/343F 608C
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 8 May 2002. MIL-PRF-19500/343F 8 February 2002 SUPERSEDING MIL-PRF-19500/343E 28 November 2000 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON,


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    PDF MIL-PRF-19500/343F MIL-PRF-19500/343E 2N2857 2N2857UB 2N2857UB JANKCA2N2857 JANHCA2N2857 MIL-PRF-19500/343F 608C

    2N3810 LCC

    Abstract: 2N2222A LCC1 ESCC 5202-001 MCA3201/2B ESCC 5204/002 bul54ah mp2835 ESCC 5201-002 silicon carbide JFET 2n918 die
    Text: Space Products Semelab products and processes for space applications SEMELAB | experience and innovation 2 Contents 1. Introduction . 4 2. Programmes Supported . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5


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    PDF FM36235 M/0103/CECC/UK 1360/M VQC-03-003050 VQC-03-003049 U3158 2M8S02 2N3810 LCC 2N2222A LCC1 ESCC 5202-001 MCA3201/2B ESCC 5204/002 bul54ah mp2835 ESCC 5201-002 silicon carbide JFET 2n918 die

    MG1007-42

    Abstract: MG1020-M16 MSC1075M 1004mp MG1052-30
    Text: Power Matters. RF & Microwave Diode and Transistor Products Microsemi RFIS Integrated Solutions RF & Microwave Diode and Transistor Products Within this short form catalog are the combined product selection guides for Microsemi RF Integrated Solutions RFIS business unit RF & microwave diodes and power transistors. RFIS diode products are


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    PDF MS4-009-13 MG1007-42 MG1020-M16 MSC1075M 1004mp MG1052-30

    transistor K 2056

    Abstract: MA42120 K 2056 transistor 2N6665 MA42001-509 2N5054 2n5651 MA42005 MA-42120 2N2857 Model
    Text: /yfaom Silicon Low Noise Bipolar T ransistors Features • LOW NOISE THROUGH 2.5 GHz ■ HERMETIC PACKAGE ■ CAN BE SCREENED TO JAN, JANTX, JANTXV LEVELS Description The series of Silicon NPN bipolar transistors are designed for low noise amplifiers in the frequency range of 60 MHz


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    MA40285

    Abstract: ma4882 MA40150 MA46H201 masw2070g1 MA46H206 MA47203 JANTX2N2857 MA4P9 MA40420
    Text: MODEL NUMBER INDEX MODEL NUMBER PAGE 1N5165 .238 1N5166 .238 1N5167 .238 1N5712 .238 1N5713 . 238


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    PDF 1N5165 1N5166 1N5167 1N5712 1N5713 1N5767 2N2857 2N3570 2N3571 2N3572 MA40285 ma4882 MA40150 MA46H201 masw2070g1 MA46H206 MA47203 JANTX2N2857 MA4P9 MA40420

    2N6665

    Abstract: MA42001-509 2N6665-509 MA42181-510 2n5054 RF NPN POWER TRANSISTOR C 10-50 GHZ 2N2857 Model MA42001 ma42 transistor 2N3953
    Text: an A M P com pany General Purpose Low Noise Bipolar Transistors Features Case Styles • Low Noise Through 1.5 GHz • Hermetic Package • Can Be Screened to JAN, JANTX, JANTXV Levels Description The series of Silicon NPN bipolar transistors are designed


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    PDF SL42E05 M220S 0001fl11 2N6665 MA42001-509 2N6665-509 MA42181-510 2n5054 RF NPN POWER TRANSISTOR C 10-50 GHZ 2N2857 Model MA42001 ma42 transistor 2N3953

    MA42181-510

    Abstract: 2N5054 2N6665-509
    Text: M a n A M P icom pany General Purpose Low Noise Bipolar Transistors V3.00 Case Styles Features • Low Noise Through 1.5 GHz • Hermetic Package • Can Be Screened to JAN, JANTX, JANTXV Levels Description The series of Silicon NPN bipolar transistors are designed


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    transistor cross reference

    Abstract: MPT3N40 Westinghouse SCR handbook LT 8224 ZENER DIODE sje389 N9602N npn transistor RCA 467 TFK 7 segment displays PUT 2N6027 delco 466
    Text: C K TBD DOLLY LIST LOGO LIST SAFETY & RELIABLTY TEK PN SYSTEM II DIGITAL IC's MEMORIES. MOS. CM OS.ECL. TTL MICROPROCESSOR SPECIAL FUNCTION IC's DIGITAL / LINEAR ARRAYS LINEAR IC'S (PURCH) TEK-MADE IC’s 3 IC's INDEX (COLORED PGS) INCL PRGMD. SCRND.ETC


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    Motorola transistors MRF 947

    Abstract: motorola hep cross reference 2N5070 2N5591 MOTOROLA Semicon volume 1 mrf532 transistor equivalents for 2n3866 siemens semiconductor manual Microlab Splitter Specification sheet pt9797
    Text: MOTOROLA RF DATA MANUAL Prepared by Technical Information Center M otorola’s leadership position of RF power, small-signal transistors and hybrid amplifiers is by research and new product development coupled with a com plete in-house m anufacturing ca pa b ility in clu d in g silico n g row ing,


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    UAA2001

    Abstract: MC8500 micromodule m68mm19 1N9388 74ALS643 2N6058 MC145026 2N5160 MOTOROLA MC3340 equivalent pn3402
    Text: MOTOROLA Semiconductors THE EUROPEAN MASTER SELECTION 1982 The total num ber of standard Sem iconductor products available from M otorola ex­ ceeds 15 0 0 0 device types. To most of our custom ers this total presents an overw helm ing choice. The European Master Selection lists approxim ately 4 0 0 0 preferred devices that re­


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    PDF 0HF40 0HF60 0HF80 6FP10 6F100 70HF10 UAA2001 MC8500 micromodule m68mm19 1N9388 74ALS643 2N6058 MC145026 2N5160 MOTOROLA MC3340 equivalent pn3402

    triac zd 607

    Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
    Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.


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    PDF SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845

    E421 fet

    Abstract: equivalent transistor e176 J2N2608 J2N3821 E112 jfet e420 dual jfet 2N390G TRANSISTOR E421 dual JFET 2N4360 equivalent transistors Teledyne Semiconductor jfet
    Text: Discretes from Teledyne Semiconductor In this catalog are listed more than 2000 high-quality diodes, bipolar transistors and JFETs available from Teledyne Semiconductor. Key specifications are included for each device and many are available w ith hi-rel processing to m ilitary specifications.


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    PDF O-72P* O-92X O-105 O-106 O-106P E421 fet equivalent transistor e176 J2N2608 J2N3821 E112 jfet e420 dual jfet 2N390G TRANSISTOR E421 dual JFET 2N4360 equivalent transistors Teledyne Semiconductor jfet