2N2605J |
|
Semico
|
Package = TO-46 Level = Jantxv Vceo (V) = 60 Vcbo (V) = 70 Vebo (V) = 6 Ic (A) = 0.03 (Power W) ta = 0.4 Rtja (C/W) = 437 Tstg/top (C) = -65 to +200 Hfe = 400 VCE(sat) (V) = 0.30 |
|
Original |
PDF
|
2N2605JAN |
|
New England Semiconductor
|
LOW-POWER PNP SILICON TRANSISTOR |
|
Original |
PDF
|
2N2605JANTX |
|
New England Semiconductor
|
PNP SILICON LOW POWER TRANSISTOR |
|
Original |
PDF
|
2N2605JANTXV |
|
New England Semiconductor
|
PNP SILICON LOW POWER TRANSISTOR |
|
Original |
PDF
|
2N2605JTX |
|
New England Semiconductor
|
LOW-POWER PNP SILICON TRANSISTOR |
|
Original |
PDF
|
2N2605JTXV |
|
New England Semiconductor
|
LOW-POWER PNP SILICON TRANSISTOR |
|
Original |
PDF
|
2N2605JV |
|
Semico
|
Package = TO-46 Level = Jantxv Vceo (V) = 60 Vcbo (V) = 70 Vebo (V) = 6 Ic (A) = 0.03 (Power W) ta = 0.4 Rtja (C/W) = 437 Tstg/top (C) = -65 to +200 Hfe = 400 VCE(sat) (V) = 0.30 |
|
Original |
PDF
|
2N2605JX |
|
Semico
|
Package = TO-46 Level = Jantxv Vceo (V) = 60 Vcbo (V) = 70 Vebo (V) = 6 Ic (A) = 0.03 (Power W) ta = 0.4 Rtja (C/W) = 437 Tstg/top (C) = -65 to +200 Hfe = 400 VCE(sat) (V) = 0.30 |
|
Original |
PDF
|