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    2N 333 EQUIVALENT Search Results

    2N 333 EQUIVALENT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80A Visit Toshiba Electronic Devices & Storage Corporation

    2N 333 EQUIVALENT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2n 333 equivalent

    Abstract: bf 333 transistor
    Text: 16 Megabit 2M x8-Bit Multi-Purpose Flash SST39VF016Q Advance Information FEATURES: • Organized as 2M x8 • Latched Address and Data • Single 2.7-3.6V Read and Write Operations • Fast Sector-Erase and Byte-Program: - Sector-Erase Time: 18 ms (typical)


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    PDF SST39VF016Q MO-142 40-LEAD 2n 333 equivalent bf 333 transistor

    iwaki resistor

    Abstract: DV0P37300 BBC25N
    Text: 10 0100 1000100 10 0100 1000100 10 0100 1000100 10 0100 10 0100 1000100 10 0100 1000100 10 0100 1000100 10 0100 10 0100 1000100 10 0100 1000100 10 0100 1000100 10 0100 10 0100 1000100 10 0100 1000100 10 0100 1000100 10 0100 10 0100 1000100 10 0100 1000100 10 0100 1000100 10 01


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    PDF 1000Electronics iwaki resistor DV0P37300 BBC25N

    MT8816

    Abstract: A-168 MSAN-133
    Text: Application Note MSAN-133 Designing Large Switching Matrices Using Zarlink Analog Switch Arrays ISSUE 1 Introduction January 1990 switch matrix will be discussed briefly and examples will be presented. The MT8816 8x16 crosspoint switch is used as the primary example because its


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    PDF MSAN-133 MT8816 A-168 MSAN-133

    MT8816

    Abstract: MSAN-133 k2n12x16x131
    Text: Application Note MSAN-133 Designing Large Switching Matrices Using Mitel Analog Switch Arrays  ISSUE 1 January 1990 switch matrix will be discussed briefly and examples will be presented. The MT8816 8x16 crosspoint switch is used as the primary example because its


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    PDF MSAN-133 MT8816 k2n12x16x131

    DS3738

    Abstract: SP8400 SP8401 SP8402 SP8402/KG/MPES
    Text: SP8402 Very Low Phase Noise Divider by 2N DS3738 - 2.1 March 1994 The SP8402 is a very low phase noise divider which divides by powers of two. The S0, S1, S2 data inputs select the division ratio in the range 21 to 28. Special circuits techniques have been


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    PDF SP8402 DS3738 SP8402 SP8400 SP8401 160dBc/Hz SP8402/KG/MPES

    varistor 565-1

    Abstract: 3SM diode 151 VARISTOR Z 151 VARISTOR VDE 565-1 WXP-103K Varistor 271 VARISTOR etc 333 271 varistor ac to dc pulse supply 5000 watt
    Text: RFI Capacitors VDE Metallized Polypropylene Film Capacitors X2 Capacitance (mF) Series WXP Global Electronic Component Solutions Since 1969 World Products Inc. has provided its domestic and international customers with state of the art, synergistic electronic product lines for the automotive, telecom, industrial,


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    PDF 8/20ms 8/20ms varistor 565-1 3SM diode 151 VARISTOR Z 151 VARISTOR VDE 565-1 WXP-103K Varistor 271 VARISTOR etc 333 271 varistor ac to dc pulse supply 5000 watt

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    Abstract: No abstract text available
    Text: SP8402 Very Low Phase Noise Divider by 2N DS3738 The SP8402 is a very low phase noise divider which divides by powers of two. The S0, S1, S2 data inputs select the division ratio in the range 21 to 28. Special circuits techniques have been used to reduce the phase noise


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    PDF SP8402 DS3738 SP8402 SP8400 SP8401 160dBc/Hz

    AN2841

    Abstract: STP24DP05 STEVAL-ILL015V1 stm32 spi STM32 UM0588 USBUF01P6 stm32 timer STMicroelectronics date code format stm32 STM32 103
    Text: AN2841 Application note LED dimming implemented on STM32 microcontroller 1 Introduction This application note deals with the general principles of LED dimming. This note also focuses on the use of pulse width modulation PWM for digital dimming. Its implementation


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    PDF AN2841 STM32TM STP24DP05 AN2841 STEVAL-ILL015V1 stm32 spi STM32 UM0588 USBUF01P6 stm32 timer STMicroelectronics date code format stm32 STM32 103

    varistor 565-1

    Abstract: Z 151 VARISTOR VARISTOR etc 333 varistor 6kv 3ka 3SM diode VDE 565-1 WXP-103K 4532 MOSFET varistor en132400 varistor 471 14
    Text: 2 | Protection Products Short Form Catalog Metal Oxide Varistor VDE Diameters Peak Current, 8/20ms Amps Varistor Voltages 5mm 100, 400, 800 18, 22, 27, 33, 39, 47, 56, 68, 82, 100, 120, 150, 180, 200, 220, 240, 270, 300, 330, 360, 390, 430, 470, 510, 560, 620, 680


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    PDF 8/20ms varistor 565-1 Z 151 VARISTOR VARISTOR etc 333 varistor 6kv 3ka 3SM diode VDE 565-1 WXP-103K 4532 MOSFET varistor en132400 varistor 471 14

    kvg crystal FILTER XF9-B

    Abstract: XF-9B 2f3 transistor SL6440 Broadband Amplifiers Application Notes WESCOn mixer Broadband Amplifiers Application Notes, appendix 3 KVG filters vmos fet plessey sl6440
    Text: AN156 Intermodulation, Phase Noise and Dynamic Range AN156 - 3.2 September 1993 The radio receiver operates in a non-benign environment. It needs to pick out a very weak wanted signal from a background of noise at the same time as it rejects a large number to much stronger unwanted signals. These may be


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    PDF AN156 AN156 kvg crystal FILTER XF9-B XF-9B 2f3 transistor SL6440 Broadband Amplifiers Application Notes WESCOn mixer Broadband Amplifiers Application Notes, appendix 3 KVG filters vmos fet plessey sl6440

    58-Rev

    Abstract: nt5ds64m8
    Text: NT5DS64M8DS NT5DS32M16DS 512Mb DDR SDRAM Feature CAS Latency Frequency z 2KB page size for all configurations. DDR-333 DDR400 DDR500 -6K/-6KI -5T/-5TI -4T 2.5-3-3 3-3-3 3-4-4 CL=2 266 266 - CL=2.5 333 333 333 CL=3 333 400 500 Speed Sorts


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    PDF NT5DS64M8DS NT5DS32M16DS 512Mb DDR-333 DDR400 DDR500 DDR-333) DDR-400/500) 58-Rev nt5ds64m8

    Untitled

    Abstract: No abstract text available
    Text: NT5DS64M8DS NT5DS32M16DS 512Mb DDR SDRAM Feature CAS Latency Frequency z 2KB page size for all configurations. DDR-333 DDR400 DDR500 -6K/-6KI -5T/-5TI -4T 2.5-3-3 3-3-3 3-4-4 CL=2 266 266 - CL=2.5 333 333 333 CL=3 333 400 500 Speed Sorts


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    PDF NT5DS64M8DS NT5DS32M16DS 512Mb DDR-333 DDR400 DDR500 DDR-333) DDR-400/500)

    Untitled

    Abstract: No abstract text available
    Text: NT5DS64M8DS NT5DS32M16DS 512Mb DDR SDRAM Feature CAS Latency Frequency z 2KB page size for all configurations. DDR-333 DDR400 DDR500 -6K/-6KI -5T/-5TI -4T 2.5-3-3 3-3-3 3-4-4 CL=2 266 266 - CL=2.5 333 333 333 CL=3 333 400 500 Speed Sorts


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    PDF NT5DS64M8DS NT5DS32M16DS 512Mb DDR-333 DDR400 DDR500 DDR-333) DDR-400/500)

    BC140 equivalent

    Abstract: 2N2484 equivalent transistors BC141 equivalent bcy59 equivalent bc160 equivalent 2n930 equivalent BC107 equivalent transistors 2n3019 equivalent BC177 equivalent BC107 pnp equivalent
    Text: Discrete Devices Transistors Cont. Low Level Amplifiers Maximum Ratings Type Polarity Pd Ambient mW Electrical Characteristics @ 25° C VCB VCE V e b Volts Volts Volts HpE *C Min/Max mA V c E (S a t) @ Ic/lß Volts mA/mA ft MHz Min NF@f Cob pF Max dB


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    PDF 2N327A 2N327B 2N328A 2N328B 2N329A 2N329B 2N760 2N760A 502N329A BCY56 BC140 equivalent 2N2484 equivalent transistors BC141 equivalent bcy59 equivalent bc160 equivalent 2n930 equivalent BC107 equivalent transistors 2n3019 equivalent BC177 equivalent BC107 pnp equivalent

    EQUIVALENT TRANSISTOR bc109c

    Abstract: TRANSISTOR pnp BC140 TRANSISTOR BC140 BC140 equivalent TRANSISTOR BC141 2N1026 EQUIVALENT TRANSISTOR bc108 bcy59 equivalent bcy31 BC177 pnp transistor
    Text: Discrete Devices Transistors Cont. Low Level Amplifiers Maxim um Ratings Type Polarity Pd Ambient mW Electrical Characteristics @ 25° C VCB VCE V e b Volts Volts Volts V c E (S a t) @ Ic / lß H p E *C Min/Max mA Volts m A/m A ft MHz Min NF@f Cob pF


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    PDF 2N327A 2N327B 2N328A 2N328B 2N329A 2N329B 2N760 2N760A BT2946 2N2946 EQUIVALENT TRANSISTOR bc109c TRANSISTOR pnp BC140 TRANSISTOR BC140 BC140 equivalent TRANSISTOR BC141 2N1026 EQUIVALENT TRANSISTOR bc108 bcy59 equivalent bcy31 BC177 pnp transistor

    EQUIVALENT TRANSISTOR bc109c

    Abstract: equivalent transistor 2N1711 Transistor BC107 motorola bc109 Transistor Equivalent list EQUIVALENT TRANSISTOR bc108 Transistor BC107b motorola TRANSISTOR pnp BC140 TRANSISTOR BC140 BC140 equivalent transistor bc107b equivalent
    Text: Discrete Devices Transistors Cont. Low Level Amplifiers Maximum Ratings Type Polarity Pd Ambient mW Electrical Characteristics @ 25° C VCB VCE V e b Volts Volts Volts HpE *C Min/Max mA V c E (S a t) @ Ic/lß Volts mA/mA ft MHz Min NF@f Cob pF Max dB


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    PDF 2N327A 2N327B 2N328A 2N328B 2N329A 2N329B 2N760 2N760A BT2946 2N2946 EQUIVALENT TRANSISTOR bc109c equivalent transistor 2N1711 Transistor BC107 motorola bc109 Transistor Equivalent list EQUIVALENT TRANSISTOR bc108 Transistor BC107b motorola TRANSISTOR pnp BC140 TRANSISTOR BC140 BC140 equivalent transistor bc107b equivalent

    2N2222A 331

    Abstract: 2n2222 -331 2N2222A motorola 2n2222 -331 transistors 2n2222 a 331 2n2222 331 transistors 2n2222 h 331 transistors 2n2222 h 331 2n2222 - 331 2n2222 331
    Text: MOTOROLA SC XSTRS/R 12E F 2N2218A 2N2219A 2N2221A 2N2222A 2N5581 2N55S2 Unît 40 40 Vdc Vdc Sym bol 2N2218 2N2219 2N2221 2N2222 Collector-Emitter Voltage v CEO 30 Collector-Base Voltage VCBO 60 75 75 Emrtter*Base Voltage Ve b o 5.0 6.0 6.0 Vdc 'c 800 800 800


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    PDF b3b7E54 2N2218 2N2219 2N2221 2N2222 2N2218A 2N2219A 2N2221A 2N2222A 2N2218, 2N2222A 331 2n2222 -331 2N2222A motorola 2n2222 -331 transistors 2n2222 a 331 2n2222 331 transistors 2n2222 h 331 transistors 2n2222 h 331 2n2222 - 331 2n2222 331

    2N4399

    Abstract: 2N4398 MOTOROLA 2N6745 2n4399 motorola 2N4398 2N4399 equivalent Motorola Bipolar Power Transistor Data 2n4399 2N5745 2N4398 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M M M T 4»W 2N 3442 PNP S ilico n H ig h -P o w e r TVansistors 2N 4398 2N 4399 2N 5745 . . . designed for use in power amplifier and switching circuits. • • • Low Coilector-Emitter Saturation Voltage — IC = 15 Ade, VcE sat) = 1-0 Vdc (Max) 2N4398.99


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    PDF 2N4398 2N5745 2N5301, 2N5302, 2N5303 2N4399 2N4398 MOTOROLA 2N6745 2n4399 motorola 2N4399 equivalent Motorola Bipolar Power Transistor Data 2n4399 2N4398 equivalent

    27721

    Abstract: No abstract text available
    Text: iiili 16 Megabit 2M x 8-Bit Multi-Purpose Flash _ SST39VF016Q_ Advance Information FEATURES: • Organized as 2 M X 8 • Latched Address and Data • Single 2.7-3.6V Read and Write Operations • Fast Sector Erase and Byte Program:


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    PDF SST39VF016Q_ SST39VF016Q Multi58-4276 27721

    Untitled

    Abstract: No abstract text available
    Text: BUCHANAN Catalog 1308389 Terminal Blocks Revised 3-01 B O A R D M O U N T, 1ST A N D 2N D L E V E L S T A C K IN G C O N N E C T O R S Board Mount 1.5 mm2 Solid Wire w/lnterlock 5.0 mm Centerline, 1st and 2nd Level, Stacking Color-Gray UL R a tin g -300 V, 13.5 A


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    PDF B07C4VXXT 796691-xx 796691-xx.

    1N5411

    Abstract: npn transistor RCA 467 CD4004T CA3051 CD4001D 40468A RCA 40822 40664 SCR rca 40583 2N5756
    Text: for HF-VHF-UHF-Microwave Applications RF Power Transistors R C A R F Power Transistors for 12.5 Volt Operation Hermetic Ceramic-Metal Stripline Package Flange TYPICAL OUTPUT POWER — WATTS 'j Hermetic Ceramic-Metal Coaxial Package (Large) Hermetic Ceramic-Metal


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    PDF CON-46 O-104 14-Lead 16-Lead 12-Lead 16-Lead O-220AB 1N5411 npn transistor RCA 467 CD4004T CA3051 CD4001D 40468A RCA 40822 40664 SCR rca 40583 2N5756

    Thyristor Xo 602 MA

    Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
    Text: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and


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    Untitled

    Abstract: No abstract text available
    Text: BUCHANAN Catalog 1308389 Terminal Blocks Revised 3-01 B O A R D M O U N T, 1ST A N D 2N D L E V E L S T A C K IN G C O N N E C T O R S Eurostyle Board Mount 2.5 mm2 Solid Wire w/lnterlock 5.08 mm Centerline, 1st and 2nd Level, Stacking UL Rating - 3 0 0 V, 17.5 A


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    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


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