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    2K X 8 CMOS RAM Search Results

    2K X 8 CMOS RAM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    5962-8670505RA Renesas Electronics Corporation 16K(4KX4) CMOS STATIC RAM Visit Renesas Electronics Corporation
    5962-8670511UA Renesas Electronics Corporation 16K(4KX4) CMOS STATIC RAM Visit Renesas Electronics Corporation
    5962-8861103LA Renesas Electronics Corporation 16K(4KX4) CMOS STATIC RAM Visit Renesas Electronics Corporation

    2K X 8 CMOS RAM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GR281

    Abstract: 2716 eprom 4016 RAM 2716 eprom datasheet memory 2716 eprom 2716 pd446 static ram 4802 2716 2k eprom retention memory ram 6116
    Text: GR281 2K x 8 NON-VOLATILE RAM GR281 (2K x 8) NON-VOLATILE RAM Symbol Vdd Vi/o Temp DESCRIPTION The GR281 is a 2048 word by 8 bits (2K x 8) nonvolatile CMOS Static Ram, fabricated from advanced silicon gate CMOS technology and a high reliability lithium power cell.


    Original     		PDF GR281 GR281 2000/95/EC 2716 eprom 4016 RAM 2716 eprom datasheet memory 2716 eprom 2716 pd446 static ram 4802 2716 2k eprom retention memory ram 6116

    6116 ram

    Abstract: memory 6116 6116 ram 2k 24-Pin Plastic DIP 6116 series Static RAMs 6116 static ram CY6116 ram 6116 6116 memory chip L6116CC15
    Text: L6116 L6116 DEVICES INCORPORATED 2K x 8 Static RAM Low Power 2K x 8 Static RAM (Low Power) DEVICES INCORPORATED FEATURES DESCRIPTION q 2K x 8 Static RAM with Chip Select Powerdown, Output Enable q Auto-Powerdown Design q Advanced CMOS Technology q High Speed — to 15 ns maximum


    Original     		PDF L6116 L6116) L6116-L) L6116-L MIL-STD-883, IDT6116, CY7C128/CY6116 6116 ram memory 6116 6116 ram 2k 24-Pin Plastic DIP 6116 series Static RAMs 6116 static ram CY6116 ram 6116 6116 memory chip L6116CC15

    STK25C48

    Abstract: No abstract text available
    Text: STK25C48 2K x 8 AutoStore nvSRAM QuantumTrap™ CMOS Nonvolatile Static RAM Obsolete - Not Recommend for new Designs FEATURES DESCRIPTION • Nonvolatile Storage without Battery Problems • Directly Replaces 2K x 8 Static RAM, BatteryBacked RAM or EEPROMs


    Original     		PDF STK25C48 200ns 100-Year 24-Pin STK25C48 ML0005 Sn/15

    Untitled

    Abstract: No abstract text available
    Text: STK25C48 2K x 8 AutoStore nvSRAM QuantumTrap™ CMOS Nonvolatile Static RAM FEATURES DESCRIPTION • Nonvolatile Storage without Battery Problems • Directly Replaces 2K x 8 Static RAM, BatteryBacked RAM or EEPROMs • 25ns, 35ns and 45ns Access Times


    Original     		PDF STK25C48 200ns 100-Year 24-Pin STK25C48 ML0005

    STK25C48

    Abstract: No abstract text available
    Text: STK25C48 2K x 8 AutoStore nvSRAM QuantumTrap™ CMOS Nonvolatile Static RAM FEATURES DESCRIPTION • Nonvolatile Storage without Battery Problems • Directly Replaces 2K x 8 Static RAM, BatteryBacked RAM or EEPROMs • 25ns, 35ns and 45ns Access Times


    Original     		PDF STK25C48 200ns 100-Year 24-Pin STK25C48 ML0005 Sn/15

    ttl SUBSTITUTION DATA BOOK

    Abstract: STK25C48
    Text: STK25C48 2K x 8 AutoStore nvSRAM QuantumTrap™ CMOS Nonvolatile Static RAM FEATURES DESCRIPTION • Nonvolatile Storage without Battery Problems • Directly Replaces 2K x 8 Static RAM, BatteryBacked RAM or EEPROM • 20ns, 25ns, 35ns and 45ns Access Times


    Original     		PDF STK25C48 200ns 100-Year 24-Pin STK25C48 ttl SUBSTITUTION DATA BOOK

    Z912

    Abstract: CY7C136-35JI CY7C136-55NC
    Text: CY7C142/CY7C146, CY7C132/CY7C136 2K x 8 Dual-Port Static RAM Features Functional Description • True Dual-Ported memory cells which enable simultaneous reads of the same memory location ■ 2K x 8 organization ■ 0.65-micron CMOS for optimum speed and power


    Original     		PDF CY7C142/CY7C146, CY7C132/CY7C136 CY7C132/CY7C136/CY7C142 CY7C146 CY7C132/ CY7C136 CY7C142/CY7C146 16-bit Z912 CY7C136-35JI CY7C136-55NC

    Untitled

    Abstract: No abstract text available
    Text: CMOS Static RAM 16K 2K x 8-Bit IDT6116SA IDT6116LA Features Description ◆ The IDT6116SA/LA is a 16,384-bit high-speed static RAM organized as 2K x 8. It is fabricated using IDT's high-performance, high-reliability CMOS technology. Access times as fast as 15ns are available. The circuit also offers a


    Original     		PDF IDT6116SA IDT6116LA IDT6116SA/LA 384-bit SR-0602-02. 24-pin

    CY7C132

    Abstract: CY7C136 CY7C142 CY7C146 CY7C136-55NC CY7C136-55JC
    Text: CY7C132, CY7C136 CY7C136A, CY7C142, CY7C146 2K x 8 Dual-Port Static RAM Features Functional Description • True dual-ported memory cells that enable simultaneous reads of the same memory location ■ 2K x 8 organization ■ 0.65 micron CMOS for optimum speed and power


    Original     		PDF CY7C132, CY7C136 CY7C136A, CY7C142, CY7C146 CY7C132/CY7C136/CY7C136A CY7C142/CY7C146 CY7C132/CY7C136/CY7C136A; 52-Pin CY7C132 CY7C136 CY7C142 CY7C146 CY7C136-55NC CY7C136-55JC

    CY7C136-55JC

    Abstract: No abstract text available
    Text: CY7C132, CY7C136 CY7C136A, CY7C142, CY7C146 2K x 8 Dual-Port Static RAM Functional Description Features • True dual-ported memory cells that enable simultaneous reads of the same memory location ■ 2K x 8 organization ■ 0.65 micron CMOS for optimum speed and power


    Original     		PDF CY7C132, CY7C136 CY7C136A, CY7C142, CY7C146 CY7C132/CY7C136/CY7C136A CY7C142/CY7C146 CY7C132/CY7C136/CY7C136A; 52-Pin CY7C136-55JC

    CY7C136-55NC

    Abstract: No abstract text available
    Text: CY7C132, CY7C136 CY7C136A, CY7C142, CY7C146 2K x 8 Dual-Port Static RAM Features Functional Description • True dual-ported memory cells that enable simultaneous reads of the same memory location ■ 2K x 8 organization ■ 0.65 micron CMOS for optimum speed and power


    Original     		PDF CY7C132, CY7C136 CY7C136A, CY7C142, CY7C146 CY7C136, CY7C146 CY7C136-55NC

    transistor a4L

    Abstract: CY7C132 CY7C136 CY7C142 CY7C146 a7r transistor CY7C136-55NC
    Text: CY7C132, CY7C136 CY7C136A, CY7C142, CY7C146 2K x 8 Dual-Port Static RAM Features Functional Description • True dual-ported memory cells that enable simultaneous reads of the same memory location ■ 2K x 8 organization ■ 0.65 micron CMOS for optimum speed and power


    Original     		PDF CY7C132, CY7C136 CY7C136A, CY7C142, CY7C146 CY7C136, transistor a4L CY7C132 CY7C136 CY7C142 CY7C146 a7r transistor CY7C136-55NC

    CY7C136-55NC

    Abstract: No abstract text available
    Text: CY7C132, CY7C136 CY7C136A, CY7C142, CY7C146 2K x 8 Dual-Port Static RAM Features Functional Description • True dual-ported memory cells that enable simultaneous reads of the same memory location ■ 2K x 8 organization ■ 0.65 micron CMOS for optimum speed and power


    Original     		PDF CY7C132, CY7C136 CY7C136A, CY7C142, CY7C146 CY7C136, CY7C146 CY7C136-55NC

    CY7C136-55NI

    Abstract: cy7c136 CY7C132 CY7C142 CY7C146 CY7C146-15NC CY7C136-25JXC CY7C136-55NC
    Text: CY7C132, CY7C136 CY7C136A, CY7C142, CY7C146 2K x 8 Dual-Port Static RAM Features Functional Description • True dual-ported memory cells that enable simultaneous reads of the same memory location ■ 2K x 8 organization ■ 0.65 micron CMOS for optimum speed and power


    Original     		PDF CY7C132, CY7C136 CY7C136A, CY7C142, CY7C146 CY7C136, CY7C136-55NI cy7c136 CY7C132 CY7C142 CY7C146 CY7C146-15NC CY7C136-25JXC CY7C136-55NC

    Untitled

    Abstract: No abstract text available
    Text: DUAL PORT STATIC RAM 2K x 8 -B IT CMOS FUJITSU M B8421/22-90 MB8421/22-90L MB8421/22-12 MB8421/22-12L May 1989 Edition 2.0 DUAL PORT STATIC RAM 2K X 8-BIT CMOS The Fujitsu MB8421/MB8422 are 2K by 8 dual-port high-perform ance Static Random Access Memories SRAMs fabricated in CMOS. The SRAMs use


    OCR Scan     		PDF B8421/22-90 MB8421/22-90L MB8421/22-12 MB8421/22-12L MB8421/MB8422 MB8421 MB8422 aut709 MB8421/22-90

    Untitled

    Abstract: No abstract text available
    Text: V V ITE LIC V61C32 FAMILY HIG H PERFORMANCE LOW POWER 2K x 8 BIT CMOS DUAL PORT MEMORY Features Description • 2K x 8 bit CMOS static RAM with 3-state outputs The Vitelic V61C 32 is a C M O S 2K x 8 high-speed dual port static RAM with a d va n ce d arbitration logic


    OCR Scan     		PDF V61C32

    Untitled

    Abstract: No abstract text available
    Text: X XECOM XE1213/XE1213C SMARTSOCKET FEATURES DESCRIPTION □ Accepts standard 2K x 8, 8K x 8 and 32K x 8 CMOS static RAMS. The XE1213 and XE1213C are 28-pin 0.6 inchwide DIP sockets with a built-in CMOS con­ troller circuit and an embedded lithium energy source. The XE1213 accepts either 24-pin 2K x 8


    OCR Scan     		PDF XE1213/XE1213C XE1213 XE1213C 28-pin 24-pin

    Untitled

    Abstract: No abstract text available
    Text: VITELIC V61C33 HIGH PERFORMANCE LOW POWER 2/C x 8 BIT CMOS DUAL PORT MEMORY OBJ ECU VE SPECIFICATIONS = = = = = Features Description • 2K x 8 bit CMOS static RAM with 3-state outputs The Vitelic V61C33 is a CM OS 2K x8 high-speed dual port static RAM with advanced arbitration logic


    OCR Scan     		PDF V61C33

    S87C751-1A28

    Abstract: 83C751-87C751 s87c751 8XC751 1N24 5n24 S87C751-1N24
    Text: Philips Semiconductors Product specification CMOS single-chip 8-bit microcontrollers DESCRIPTION 83C751/87C751 • 2k x 8 ROM 83C751 2k x 8 EPROM (87C751) The Philips 83C751/87C751 offers the advantages of the 80C51 architecture in a small package and at low cost.


    OCR Scan     		PDF 83C751/87C751 83C751/87C751 80C51 8XC751 83C751) 87C751) 16-bit S87C751-1A28 83C751-87C751 s87c751 1N24 5n24 S87C751-1N24

    2N24

    Abstract: No abstract text available
    Text: Product specification Philips Semiconductors CMOS single-chip 8-bit microcontrollers DESCRIPTION 83C751/87C751 • 2k x 8 ROM 83C751 2k x 8 EPROM (87C751) The Philips 83C751/87C751 offers the advantages of the 80C51 architecture in a small package and at low cost.


    OCR Scan     		PDF 83C751/87C751 83C751) 87C751) 83C751/87C751 80C51 8XC751 16-bit 2N24

    85C82

    Abstract: No abstract text available
    Text: . 85C82 Microchip 2K 256 X 8 CMOS Serial Electrically Erasable PROM DESCRIPTION FEATURES • Low power CMOS technology The Microchip Technology Inc. 85C82 is a 2K bit Elec­ • Organized as one block of 256 bytes (256 x 8) trically Erasable PROM. The device is organized as 256


    OCR Scan     		PDF 85C82 85C82 he85C 85C82s MCHPD001

    B8432

    Abstract: sram 2k x 8 MB8432
    Text: October 1989 Edition 1.0 FUJITSU DATA SHEET MB8431/32-90/-90U-90LU-12/-12U-12LL CMOS 16K-BIT DUAL PORT SRAM 2K X 8-BIT CMOS DUAL PORT STATIC RANDOM ACCESS MEMORY The Fujitsu MB8431/32 are 2K words x 8 bits Dual port high-performance-static Random Access Memories SRAMs fabricated in CMOS. The SRAMs use asynchronous circuits;


    OCR Scan     		PDF MB8431/32-90/-90U-90LU-12/-12U-12LL 16K-BIT MB8431/32 MB8431 MB8432 B8432 sram 2k x 8

    Untitled

    Abstract: No abstract text available
    Text: October 1989 Edition 1.0 FUJITSU DATA SHEET MB8431/32-90/-90U-90LU-12/-12U-12LL CMOS 16K-BIT DUAL PORT SRAM 2K X 8-BIT CMOS DUAL PORT STATIC RANDOM ACCESS MEMORY The Fujitsu MB8431/32 are 2K words x 8 bits Dual port high-performance-static Random Access Memories SRAMs fabricated in CMOS. The SRAMs use asynchronous circuits;


    OCR Scan     		PDF MB8431/32-90/-90U-90LU-12/-12U-12LL 16K-BIT MB8431/32 MB8431 MB8432 DIP-52P-M01 MB8431) 374T7Sb

    DT71321

    Abstract: dt7132
    Text: \dt Integrated Devk :e Technology, Inc. CMOS DUAL-PORT RAM 16K 2K x 8-BIT) WITH INTERRUPTS IDT71321SA/LA ,DT71421SA/LA FEATURES: DESCRIPTION: • High-speed access The IDT71321/IDT71421 are high-speed 2K x 8 DualPort Static RAMs with internal interrupt logic for interproces­


    OCR Scan     		PDF IDT71321SA/LA DT71421SA/LA 20/25/35/45/55ns IDT71321/IDT71421SA IDT71321/421 IDT71321 16or-m IDT71421 DT71321 IDT71321; dt7132