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    2K 6116 Search Results

    2K 6116 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    6116LA55TDB Renesas Electronics Corporation 5.0V 2K x 8 Asynchronous Static RAM, CDIP15/Tube Visit Renesas Electronics Corporation
    6116SA55DB Renesas Electronics Corporation 5.0V 2K x 8 Asynchronous Static RAM, CDIP15/Tube Visit Renesas Electronics Corporation
    6116LA35DB Renesas Electronics Corporation 5.0V 2K x 8 Asynchronous Static RAM, CDIP15/Tube Visit Renesas Electronics Corporation
    6116SA20SOG Renesas Electronics Corporation 5.0V 2K x 8 Asynchronous Static RAM, SOIC31/Tube Visit Renesas Electronics Corporation
    6116LA35TDB Renesas Electronics Corporation 5.0V 2K x 8 Asynchronous Static RAM, CDIP15/Tube Visit Renesas Electronics Corporation

    2K 6116 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    GR281

    Abstract: 2716 eprom 4016 RAM 2716 eprom datasheet memory 2716 eprom 2716 pd446 static ram 4802 2716 2k eprom retention memory ram 6116
    Text: GR281 2K x 8 NON-VOLATILE RAM GR281 (2K x 8) NON-VOLATILE RAM Symbol Vdd Vi/o Temp DESCRIPTION The GR281 is a 2048 word by 8 bits (2K x 8) nonvolatile CMOS Static Ram, fabricated from advanced silicon gate CMOS technology and a high reliability lithium power cell.


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    GR281 GR281 2000/95/EC 2716 eprom 4016 RAM 2716 eprom datasheet memory 2716 eprom 2716 pd446 static ram 4802 2716 2k eprom retention memory ram 6116 PDF

    6116 ram

    Abstract: memory 6116 6116 ram 2k 24-Pin Plastic DIP 6116 series Static RAMs 6116 static ram CY6116 ram 6116 6116 memory chip L6116CC15
    Text: L6116 L6116 DEVICES INCORPORATED 2K x 8 Static RAM Low Power 2K x 8 Static RAM (Low Power) DEVICES INCORPORATED FEATURES DESCRIPTION q 2K x 8 Static RAM with Chip Select Powerdown, Output Enable q Auto-Powerdown Design q Advanced CMOS Technology q High Speed — to 15 ns maximum


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    L6116 L6116) L6116-L) L6116-L MIL-STD-883, IDT6116, CY7C128/CY6116 6116 ram memory 6116 6116 ram 2k 24-Pin Plastic DIP 6116 series Static RAMs 6116 static ram CY6116 ram 6116 6116 memory chip L6116CC15 PDF

    6116 ram

    Abstract: 6116 ram 2k memory 6116 6116 static RAM chip L6116M chip diagram of ram chip 6116
    Text: L6116 L6116 DEVICES INCORPORATED 2K x 8 Static RAM Low Power 2K x 8 Static RAM (Low Power) DEVICES INCORPORATED DESCRIPTION ROW SELECT 7 O ROW ADDRESS Two standby modes are available. Proprietary Auto-Powerdown circuitry reduces power consumption automatically during read or write


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    L6116 L6116 L6116-L L6116TM25* L6116TM20* L6116TM15* MIL-STD-883 6116 ram 6116 ram 2k memory 6116 6116 static RAM chip L6116M chip diagram of ram chip 6116 PDF

    Untitled

    Abstract: No abstract text available
    Text: CMOS Static RAM 16K 2K x 8-Bit IDT6116SA IDT6116LA Features Description ◆ The IDT6116SA/LA is a 16,384-bit high-speed static RAM organized as 2K x 8. It is fabricated using IDT's high-performance, high-reliability CMOS technology. Access times as fast as 15ns are available. The circuit also offers a


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    IDT6116SA IDT6116LA IDT6116SA/LA 384-bit SR-0602-02. 24-pin PDF

    8403602JA

    Abstract: 8403606JA 29104BJA 29110BJA 8403606ZA HM1-65162-9 HM1-65162B-9 HM4-65162-9 HM4-65162B-9 HM-65162
    Text: HM-65162 2K x 8 Asynchronous CMOS Static RAM March 1997 Features Description • Fast Access Time. . . . . . . . . . . . . . . . . . . . 70/90ns Max The HM-65162 is a CMOS 2048 x 8 Static Random Access Memory manufactured using the Intersil Advanced SAJI V


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    HM-65162 70/90ns HM-65162 8403602JA 8403606JA 29104BJA 29110BJA 8403606ZA HM1-65162-9 HM1-65162B-9 HM4-65162-9 HM4-65162B-9 PDF

    8403602ZA

    Abstract: 8403602JA 8403606JA 65162 29104BJA 29110BJA 8403606ZA HM1-65162-9 HM1-65162B-9 HM4-65162-9
    Text: HM-65162 TM 2K x 8 Asynchronous CMOS Static RAM March 1997 Features Description • Fast Access Time . . . . . . . . . . . . . . . . . . . 70/90ns Max The HM-65162 is a CMOS 2048 x 8 Static Random Access Memory manufactured using the Intersil Advanced SAJI V


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    HM-65162 70/90ns HM-65162 8403602ZA 8403602JA 8403606JA 65162 29104BJA 29110BJA 8403606ZA HM1-65162-9 HM1-65162B-9 HM4-65162-9 PDF

    6116 RAM

    Abstract: ic 6116 TMM2016 6116 SRAM 6116 ram 6116 6116 memory 6116 CMOS RAM 6116 static RAM chip SY2128
    Text: 2016/6116/9128 2K x 8 SRAM Page 1 of 5 2016/6116/9128 - 2048x8 bit Static RAM Description The 2016/6116 series of Static RAMs are 16,384 bit memories organized as 2,048 words by 8 bits and operates on a single +5V supply. 2016's and equivalents are generally NMOS or MOS


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    2048x8 450ns 10-100mA CY7C128 IDT6116A V61C16 VT20C19 CXK5814P TC2018 MCM2018A 6116 RAM ic 6116 TMM2016 6116 SRAM 6116 ram 6116 6116 memory 6116 CMOS RAM 6116 static RAM chip SY2128 PDF

    Untitled

    Abstract: No abstract text available
    Text: AN24 TC7109 Records Remote Data Automatically Author: Wes Freeman, Microchip Technology, Inc. INTRODUCTION A Microchip Technology analog-to-digital converter, a 2K-byte CMOS static RAM, and some gates and counters can be combined to form a low-cost, flexible, standalone data logging


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    TC7109 PIC16C62A DS00796A-page PDF

    TC7660

    Abstract: 200B DK-2750 IDT6116 PIC16C62A TC7109
    Text: AN796 TC7109 Records Remote Data Automatically Author: Wes Freeman, Microchip Technology, Inc. INTRODUCTION A Microchip Technology analog-to-digital converter, a 2K-byte CMOS static RAM, and some gates and counters can be combined to form a low-cost, flexible, standalone data logging


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    AN796 TC7109 13-bit 12-bit D-81739 DS00796A* DS00796A-page TC7660 200B DK-2750 IDT6116 PIC16C62A PDF

    cd4060

    Abstract: cd4060 crystal application CD4060 data CD4040 application circuit for CD4060 of CD4060 cmos 74C00 NAND IC2 CD4060 cd4060 application note IC2 CD4060 CURRENT TO VOLTAGE CONVERTER
    Text: APPLICATION NOTE 24 TC7109 RECORDS REMOTE DATA AUTOMATICALLY TC7109 RECORDS REMOTE DATA AUTOMATICALLY By Wes AN-24 Freeman A TelCom Semiconductor analog-to-digital converter, a 2K-byte CMOS static RAM, and some gates and counters can be combined to form a low-cost, flexible, stand-alone


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    TC7109 AN-24 13-bit 12bit 14-STAGE cd4060 cd4060 crystal application CD4060 data CD4040 application circuit for CD4060 of CD4060 cmos 74C00 NAND IC2 CD4060 cd4060 application note IC2 CD4060 CURRENT TO VOLTAGE CONVERTER PDF

    HM1-65162/883

    Abstract: ma 6116 f6
    Text: HM-65162/883 TM 2K x 8 Asynchronous CMOS Static RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-65162/883 is a CMOS 2048 x 8 Static Random


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    HM-65162/883 MIL-STD883 HM-65162/883 HM1-65162/883 ma 6116 f6 PDF

    EL6116

    Abstract: 6116 RAM ci 6116 ram 6116 IDT6116 memory 6116 6116 memory 6116 ram 2k chip diagram of ram chip 6116 L6116CMB25
    Text: L 6116 2K x 8 Static RAM Low Power D E V IC E S IN C O R P O R A T E D DESCRIPTION FEATURES □ 2K x 8 Static RAM w ith Chip Select Powerdown, Output Enable The L6116 is a high-performance, lowpower CMOS Static RAM. The storage circuitry is organized as 2048


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    L6116 L6116) L6116-L) L6116 L6116-L MIL-STD-883, IDT6116, CY7C128/CY6116 24-pin EL6116 6116 RAM ci 6116 ram 6116 IDT6116 memory 6116 6116 memory 6116 ram 2k chip diagram of ram chip 6116 L6116CMB25 PDF

    TZ1114

    Abstract: chip diagram of ram chip 6116 IDT6116 6116 static RAM chip 6116 ram 2k cewe EZ
    Text: LOGIC DEVICES INC 2bE D • SSbSTOS OOOlOOfl 5 M _ _ _ _ _ _ 2K X 8 Static RAM T ~ 9 è ~2 3 - /2 L6116/L6116L Low Power DESCRIPTION FEATURES Q 2K x 8 Static RAM with Chip Select Powerdown, Output Enable □ Auto-Powerdown Design


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    L6116/L6116L L6116) 100nW L6116L) IDT6116, CY7C128/CY6116 24-pln 24-pin TZ1114 chip diagram of ram chip 6116 IDT6116 6116 static RAM chip 6116 ram 2k cewe EZ PDF

    smd a7n

    Abstract: ZD103 ram IC 6116 circuit diagram
    Text: L6116 2K DEVICES INCORPORATED FEATURES □ 2K x 8 Static RAM with Chip Select Powerdown, Output Enable □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 10 ns maximum □ Low Power Operation Active: 250 mW typical at 35 ns Standby typical :


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    L6116 L6116) L6116-Low MIL-STD-883, L6116 IDT6116, CY7C128/CY6116 24-pin smd a7n ZD103 ram IC 6116 circuit diagram PDF

    L6116PC85

    Abstract: No abstract text available
    Text: LOGIC DEVICES <ENC lbE D 2K x 8 Static RAM • ÌSbSTOS QGOdblb =i L6 116 T - -23-/2. Features Description □ 2K by 8 Static RAM with chip select powerdown, output enable The L6116 is a high-performance, low- memory is deselected. In addition, power CMOS static RAM. The


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    L6116 IDT6116, CY7C128/CY6116 24-pin 24-pinPlastic 28-pin L6116PC85 PDF

    HA 3089

    Abstract: HA3089 30B9
    Text: IDT6116SA IDT6116LA CMOS STATIC RAM 16K 2K x 8 BIT Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High-speed access and chip select times The ID T6116S A /L A is a 16,384-bit high-speed static RAM organized as 2K x 8. It is fabricated using ID T's high-perfor­


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    IDT6116SA IDT6116LA T6116S 384-bit 002375B IDT6116SA/LA MIL-STD-883, P24-1) P24-2) D24-1) HA 3089 HA3089 30B9 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2K X 8 Static RAM L 6 1 1 6 /L 6 1 1 6L Low Power DESCRIPTION FEATURES □ 2K x 8 Static RAM with Chip Select Powerdow n, O utput Enable U Auto-Pow erdow n D esign □ A dvan ced CM O S Technology □ High Speed — to 10 ns m axim um □ Low Power Operation


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    L6116 L6116L L6116KC L6116LKC L6116TC L6116LTC L6116KM PDF

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON M 0 » I L » m TJÌ MK6116, MKI6116, MK6116L, MKI6116L N/S -15/20/25 2K x 8 CMOS STATIC RAM Data Sheet a BYTEWYDE 2K X 8 CMOS STATIC RAM □ 45 VOLT ONLY WRITE/READ □ 24-PIN 600 MIL PLASTIC DIP, JEDEC PINOUT 28-PIN 330 MIL SOIC □ EQUAL WRITE AND READ CYCLE TIMES


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    MK6116, MKI6116, MK6116L, MKI6116L 24-PIN 28-PIN MK6116 384-bit 24-pin, PDF

    8403602JA

    Abstract: 8403606JA
    Text: HM-65162 Semiconductor 2K x 8 Asynchronous CMOS Static RAM March 1997 Description Features • Fast Access Time. 70/90ns Max • Low Standby Max • Low Operating C u rren t. 70mA Max


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    HM-65162 HM-65162 8403602JA 8403606JA PDF

    chip diagram of ram chip 6116

    Abstract: m2011 bond pull M2019 M2010 M2011 S102 marking RAD
    Text: Honeywell HC6116—TTL INPUT Digital Technologies Preliminary 2K x 8 RADIATION-HARDENED STATIC RAM FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxial 1.2 |xm Process • Typical 90 ns Access Time • Total Dose Hardness through 1x10 rad SiOz


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    HC6116â 1x10ucrrr2 1x109 1x1012 chip diagram of ram chip 6116 m2011 bond pull M2019 M2010 M2011 S102 marking RAD PDF

    HM1-65162

    Abstract: HM165162883 hm165162 harris HM1-65162B-9 hm4 SMD hm465162c 8403603JA 8403602JA 8403606JA
    Text: æ HM-65162 2K x 8 Asynchronous OMOS StStiC RAM January 1992 Features Description • Fast Access Time. 70/90ns Max The HM-65162 is a CMOS 2048 x 8 Static Random Access Memory manufactured using the Harris Advanced SAJI V


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    HM-65162 HM-65162 HM1-65162 HM165162883 hm165162 harris HM1-65162B-9 hm4 SMD hm465162c 8403603JA 8403602JA 8403606JA PDF

    6116 RAM

    Abstract: ci 6116 ram 6116 6116 chip diagram of ram chip 6116 6116 static ram Matra-Harris Semiconductor 6116 CMOS RAM RAM type 6116 6116L
    Text: MHS lllll AIATRA-HARRIS SEMICONDUCTOR HM 6116/6116 L 2K x 8 CMOS STATIC RAM MAY 1986 Features • MILITARY/INDUSTRIAL : FAST ACCESS TIME : 120 ns • ASYNCHRONOUS • STAND BY CURRENT : 100 pA max • OPERATING SUPPLY CURRENT : 60 mA max • BATTERY BACK UP OPERATION : 2V mln - SO jiA max


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    6116/6116L 6116 RAM ci 6116 ram 6116 6116 chip diagram of ram chip 6116 6116 static ram Matra-Harris Semiconductor 6116 CMOS RAM RAM type 6116 6116L PDF

    chip diagram of ram chip 6116

    Abstract: ci 6116 RAM 6116
    Text: SGS-THOMSON KLH Tr[^© iìOa©S M K 6116 MK6116, MKI6116, MK6116L, MKI6116L (N/S - 15/20/25 2 K X 8 CMOS STATIC RAM • BYTEWYDE 2K x 8 CMOS STATIC RAM. .« lili ■ +5 VOLT ONLY WRITE/READ. ■ HIGH PERFORMANCE WITH LOW CMOS STANDBY POWER. PIN NAMES


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    MK6116, MKI6116, MK6116L, MKI6116L 24-PIN 28-PIN MK6116 384-bit 24-pin, chip diagram of ram chip 6116 ci 6116 RAM 6116 PDF

    Untitled

    Abstract: No abstract text available
    Text: HM-65162 ÌH HARRIS S E M I C O N D U C T O R 2K x 8 Asynchronous CMOS StdtlC RAM January 1992 Features Description • Fast Access Tim Max • Low Standby Current. 50nA Max


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    HM-65162 70/90ns HM-65162 PDF