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    2K 6116 Search Results

    2K 6116 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    6116LA55TDB Renesas Electronics Corporation 5.0V 2K x 8 Asynchronous Static RAM, CDIP15/Tube Visit Renesas Electronics Corporation
    6116SA55DB Renesas Electronics Corporation 5.0V 2K x 8 Asynchronous Static RAM, CDIP15/Tube Visit Renesas Electronics Corporation
    6116LA35DB Renesas Electronics Corporation 5.0V 2K x 8 Asynchronous Static RAM, CDIP15/Tube Visit Renesas Electronics Corporation
    6116SA20SOG Renesas Electronics Corporation 5.0V 2K x 8 Asynchronous Static RAM, SOIC31/Tube Visit Renesas Electronics Corporation
    6116LA35TDB Renesas Electronics Corporation 5.0V 2K x 8 Asynchronous Static RAM, CDIP15/Tube Visit Renesas Electronics Corporation

    2K 6116 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GR281

    Abstract: 2716 eprom 4016 RAM 2716 eprom datasheet memory 2716 eprom 2716 pd446 static ram 4802 2716 2k eprom retention memory ram 6116
    Text: GR281 2K x 8 NON-VOLATILE RAM GR281 (2K x 8) NON-VOLATILE RAM Symbol Vdd Vi/o Temp DESCRIPTION The GR281 is a 2048 word by 8 bits (2K x 8) nonvolatile CMOS Static Ram, fabricated from advanced silicon gate CMOS technology and a high reliability lithium power cell.


    Original     		PDF GR281 GR281 2000/95/EC 2716 eprom 4016 RAM 2716 eprom datasheet memory 2716 eprom 2716 pd446 static ram 4802 2716 2k eprom retention memory ram 6116

    6116 ram

    Abstract: memory 6116 6116 ram 2k 24-Pin Plastic DIP 6116 series Static RAMs 6116 static ram CY6116 ram 6116 6116 memory chip L6116CC15
    Text: L6116 L6116 DEVICES INCORPORATED 2K x 8 Static RAM Low Power 2K x 8 Static RAM (Low Power) DEVICES INCORPORATED FEATURES DESCRIPTION q 2K x 8 Static RAM with Chip Select Powerdown, Output Enable q Auto-Powerdown Design q Advanced CMOS Technology q High Speed — to 15 ns maximum


    Original     		PDF L6116 L6116) L6116-L) L6116-L MIL-STD-883, IDT6116, CY7C128/CY6116 6116 ram memory 6116 6116 ram 2k 24-Pin Plastic DIP 6116 series Static RAMs 6116 static ram CY6116 ram 6116 6116 memory chip L6116CC15

    6116 ram

    Abstract: 6116 ram 2k memory 6116 6116 static RAM chip L6116M chip diagram of ram chip 6116
    Text: L6116 L6116 DEVICES INCORPORATED 2K x 8 Static RAM Low Power 2K x 8 Static RAM (Low Power) DEVICES INCORPORATED DESCRIPTION ROW SELECT 7 O ROW ADDRESS Two standby modes are available. Proprietary Auto-Powerdown circuitry reduces power consumption automatically during read or write


    Original     		PDF L6116 L6116 L6116-L L6116TM25* L6116TM20* L6116TM15* MIL-STD-883 6116 ram 6116 ram 2k memory 6116 6116 static RAM chip L6116M chip diagram of ram chip 6116

    Untitled

    Abstract: No abstract text available
    Text: CMOS Static RAM 16K 2K x 8-Bit IDT6116SA IDT6116LA Features Description ◆ The IDT6116SA/LA is a 16,384-bit high-speed static RAM organized as 2K x 8. It is fabricated using IDT's high-performance, high-reliability CMOS technology. Access times as fast as 15ns are available. The circuit also offers a


    Original     		PDF IDT6116SA IDT6116LA IDT6116SA/LA 384-bit SR-0602-02. 24-pin

    8403602JA

    Abstract: 8403606JA 29104BJA 29110BJA 8403606ZA HM1-65162-9 HM1-65162B-9 HM4-65162-9 HM4-65162B-9 HM-65162
    Text: HM-65162 2K x 8 Asynchronous CMOS Static RAM March 1997 Features Description • Fast Access Time. . . . . . . . . . . . . . . . . . . . 70/90ns Max The HM-65162 is a CMOS 2048 x 8 Static Random Access Memory manufactured using the Intersil Advanced SAJI V


    Original     		PDF HM-65162 70/90ns HM-65162 8403602JA 8403606JA 29104BJA 29110BJA 8403606ZA HM1-65162-9 HM1-65162B-9 HM4-65162-9 HM4-65162B-9

    8403602ZA

    Abstract: 8403602JA 8403606JA 65162 29104BJA 29110BJA 8403606ZA HM1-65162-9 HM1-65162B-9 HM4-65162-9
    Text: HM-65162 TM 2K x 8 Asynchronous CMOS Static RAM March 1997 Features Description • Fast Access Time . . . . . . . . . . . . . . . . . . . 70/90ns Max The HM-65162 is a CMOS 2048 x 8 Static Random Access Memory manufactured using the Intersil Advanced SAJI V


    Original     		PDF HM-65162 70/90ns HM-65162 8403602ZA 8403602JA 8403606JA 65162 29104BJA 29110BJA 8403606ZA HM1-65162-9 HM1-65162B-9 HM4-65162-9

    6116 RAM

    Abstract: ic 6116 TMM2016 6116 SRAM 6116 ram 6116 6116 memory 6116 CMOS RAM 6116 static RAM chip SY2128
    Text: 2016/6116/9128 2K x 8 SRAM Page 1 of 5 2016/6116/9128 - 2048x8 bit Static RAM Description The 2016/6116 series of Static RAMs are 16,384 bit memories organized as 2,048 words by 8 bits and operates on a single +5V supply. 2016's and equivalents are generally NMOS or MOS


    Original     		PDF 2048x8 450ns 10-100mA CY7C128 IDT6116A V61C16 VT20C19 CXK5814P TC2018 MCM2018A 6116 RAM ic 6116 TMM2016 6116 SRAM 6116 ram 6116 6116 memory 6116 CMOS RAM 6116 static RAM chip SY2128

    Untitled

    Abstract: No abstract text available
    Text: AN24 TC7109 Records Remote Data Automatically Author: Wes Freeman, Microchip Technology, Inc. INTRODUCTION A Microchip Technology analog-to-digital converter, a 2K-byte CMOS static RAM, and some gates and counters can be combined to form a low-cost, flexible, standalone data logging


    Original     		PDF TC7109 PIC16C62A DS00796A-page

    TC7660

    Abstract: 200B DK-2750 IDT6116 PIC16C62A TC7109
    Text: AN796 TC7109 Records Remote Data Automatically Author: Wes Freeman, Microchip Technology, Inc. INTRODUCTION A Microchip Technology analog-to-digital converter, a 2K-byte CMOS static RAM, and some gates and counters can be combined to form a low-cost, flexible, standalone data logging


    Original     		PDF AN796 TC7109 13-bit 12-bit D-81739 DS00796A* DS00796A-page TC7660 200B DK-2750 IDT6116 PIC16C62A

    cd4060

    Abstract: cd4060 crystal application CD4060 data CD4040 application circuit for CD4060 of CD4060 cmos 74C00 NAND IC2 CD4060 cd4060 application note IC2 CD4060 CURRENT TO VOLTAGE CONVERTER
    Text: APPLICATION NOTE 24 TC7109 RECORDS REMOTE DATA AUTOMATICALLY TC7109 RECORDS REMOTE DATA AUTOMATICALLY By Wes AN-24 Freeman A TelCom Semiconductor analog-to-digital converter, a 2K-byte CMOS static RAM, and some gates and counters can be combined to form a low-cost, flexible, stand-alone


    Original     		PDF TC7109 AN-24 13-bit 12bit 14-STAGE cd4060 cd4060 crystal application CD4060 data CD4040 application circuit for CD4060 of CD4060 cmos 74C00 NAND IC2 CD4060 cd4060 application note IC2 CD4060 CURRENT TO VOLTAGE CONVERTER

    HM1-65162/883

    Abstract: ma 6116 f6
    Text: HM-65162/883 TM 2K x 8 Asynchronous CMOS Static RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-65162/883 is a CMOS 2048 x 8 Static Random


    Original     		PDF HM-65162/883 MIL-STD883 HM-65162/883 HM1-65162/883 ma 6116 f6

    EL6116

    Abstract: 6116 RAM ci 6116 ram 6116 IDT6116 memory 6116 6116 memory 6116 ram 2k chip diagram of ram chip 6116 L6116CMB25
    Text: L 6116 2K x 8 Static RAM Low Power D E V IC E S IN C O R P O R A T E D DESCRIPTION FEATURES □ 2K x 8 Static RAM w ith Chip Select Powerdown, Output Enable The L6116 is a high-performance, lowpower CMOS Static RAM. The storage circuitry is organized as 2048


    OCR Scan     		PDF L6116 L6116) L6116-L) L6116 L6116-L MIL-STD-883, IDT6116, CY7C128/CY6116 24-pin EL6116 6116 RAM ci 6116 ram 6116 IDT6116 memory 6116 6116 memory 6116 ram 2k chip diagram of ram chip 6116 L6116CMB25

    TZ1114

    Abstract: chip diagram of ram chip 6116 IDT6116 6116 static RAM chip 6116 ram 2k cewe EZ
    Text: LOGIC DEVICES INC 2bE D • SSbSTOS OOOlOOfl 5 M _ _ _ _ _ _ 2K X 8 Static RAM T ~ 9 è ~2 3 - /2 L6116/L6116L Low Power DESCRIPTION FEATURES Q 2K x 8 Static RAM with Chip Select Powerdown, Output Enable □ Auto-Powerdown Design


    OCR Scan     		PDF L6116/L6116L L6116) 100nW L6116L) IDT6116, CY7C128/CY6116 24-pln 24-pin TZ1114 chip diagram of ram chip 6116 IDT6116 6116 static RAM chip 6116 ram 2k cewe EZ

    smd a7n

    Abstract: ZD103 ram IC 6116 circuit diagram
    Text: L6116 2K DEVICES INCORPORATED FEATURES □ 2K x 8 Static RAM with Chip Select Powerdown, Output Enable □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 10 ns maximum □ Low Power Operation Active: 250 mW typical at 35 ns Standby typical :


    OCR Scan     		PDF L6116 L6116) L6116-Low MIL-STD-883, L6116 IDT6116, CY7C128/CY6116 24-pin smd a7n ZD103 ram IC 6116 circuit diagram

    L6116PC85

    Abstract: No abstract text available
    Text: LOGIC DEVICES <ENC lbE D 2K x 8 Static RAM • ÌSbSTOS QGOdblb =i L6 116 T - -23-/2. Features Description □ 2K by 8 Static RAM with chip select powerdown, output enable The L6116 is a high-performance, low- memory is deselected. In addition, power CMOS static RAM. The


    OCR Scan     		PDF L6116 IDT6116, CY7C128/CY6116 24-pin 24-pinPlastic 28-pin L6116PC85

    HA 3089

    Abstract: HA3089 30B9
    Text: IDT6116SA IDT6116LA CMOS STATIC RAM 16K 2K x 8 BIT Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High-speed access and chip select times The ID T6116S A /L A is a 16,384-bit high-speed static RAM organized as 2K x 8. It is fabricated using ID T's high-perfor­


    OCR Scan     		PDF IDT6116SA IDT6116LA T6116S 384-bit 002375B IDT6116SA/LA MIL-STD-883, P24-1) P24-2) D24-1) HA 3089 HA3089 30B9

    Untitled

    Abstract: No abstract text available
    Text: 2K X 8 Static RAM L 6 1 1 6 /L 6 1 1 6L Low Power DESCRIPTION FEATURES □ 2K x 8 Static RAM with Chip Select Powerdow n, O utput Enable U Auto-Pow erdow n D esign □ A dvan ced CM O S Technology □ High Speed — to 10 ns m axim um □ Low Power Operation


    OCR Scan     		PDF L6116 L6116L L6116KC L6116LKC L6116TC L6116LTC L6116KM

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON M 0 » I L » m TJÌ MK6116, MKI6116, MK6116L, MKI6116L N/S -15/20/25 2K x 8 CMOS STATIC RAM Data Sheet a BYTEWYDE 2K X 8 CMOS STATIC RAM □ 45 VOLT ONLY WRITE/READ □ 24-PIN 600 MIL PLASTIC DIP, JEDEC PINOUT 28-PIN 330 MIL SOIC □ EQUAL WRITE AND READ CYCLE TIMES


    OCR Scan     		PDF MK6116, MKI6116, MK6116L, MKI6116L 24-PIN 28-PIN MK6116 384-bit 24-pin,

    8403602JA

    Abstract: 8403606JA
    Text: HM-65162 Semiconductor 2K x 8 Asynchronous CMOS Static RAM March 1997 Description Features • Fast Access Time. 70/90ns Max • Low Standby Max • Low Operating C u rren t. 70mA Max


    OCR Scan     		PDF HM-65162 HM-65162 8403602JA 8403606JA

    chip diagram of ram chip 6116

    Abstract: m2011 bond pull M2019 M2010 M2011 S102 marking RAD
    Text: Honeywell HC6116—TTL INPUT Digital Technologies Preliminary 2K x 8 RADIATION-HARDENED STATIC RAM FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxial 1.2 |xm Process • Typical 90 ns Access Time • Total Dose Hardness through 1x10 rad SiOz


    OCR Scan     		PDF HC6116â 1x10ucrrr2 1x109 1x1012 chip diagram of ram chip 6116 m2011 bond pull M2019 M2010 M2011 S102 marking RAD

    HM1-65162

    Abstract: HM165162883 hm165162 harris HM1-65162B-9 hm4 SMD hm465162c 8403603JA 8403602JA 8403606JA
    Text: æ HM-65162 2K x 8 Asynchronous OMOS StStiC RAM January 1992 Features Description • Fast Access Time. 70/90ns Max The HM-65162 is a CMOS 2048 x 8 Static Random Access Memory manufactured using the Harris Advanced SAJI V


    OCR Scan     		PDF HM-65162 HM-65162 HM1-65162 HM165162883 hm165162 harris HM1-65162B-9 hm4 SMD hm465162c 8403603JA 8403602JA 8403606JA

    6116 RAM

    Abstract: ci 6116 ram 6116 6116 chip diagram of ram chip 6116 6116 static ram Matra-Harris Semiconductor 6116 CMOS RAM RAM type 6116 6116L
    Text: MHS lllll AIATRA-HARRIS SEMICONDUCTOR HM 6116/6116 L 2K x 8 CMOS STATIC RAM MAY 1986 Features • MILITARY/INDUSTRIAL : FAST ACCESS TIME : 120 ns • ASYNCHRONOUS • STAND BY CURRENT : 100 pA max • OPERATING SUPPLY CURRENT : 60 mA max • BATTERY BACK UP OPERATION : 2V mln - SO jiA max


    OCR Scan     		PDF 6116/6116L 6116 RAM ci 6116 ram 6116 6116 chip diagram of ram chip 6116 6116 static ram Matra-Harris Semiconductor 6116 CMOS RAM RAM type 6116 6116L

    chip diagram of ram chip 6116

    Abstract: ci 6116 RAM 6116
    Text: SGS-THOMSON KLH Tr[^© iìOa©S M K 6116 MK6116, MKI6116, MK6116L, MKI6116L (N/S - 15/20/25 2 K X 8 CMOS STATIC RAM • BYTEWYDE 2K x 8 CMOS STATIC RAM. .« lili ■ +5 VOLT ONLY WRITE/READ. ■ HIGH PERFORMANCE WITH LOW CMOS STANDBY POWER. PIN NAMES


    OCR Scan     		PDF MK6116, MKI6116, MK6116L, MKI6116L 24-PIN 28-PIN MK6116 384-bit 24-pin, chip diagram of ram chip 6116 ci 6116 RAM 6116

    Untitled

    Abstract: No abstract text available
    Text: HM-65162 ÌH HARRIS S E M I C O N D U C T O R 2K x 8 Asynchronous CMOS StdtlC RAM January 1992 Features Description • Fast Access Tim Max • Low Standby Current. 50nA Max


    OCR Scan     		PDF HM-65162 70/90ns HM-65162