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    2GM TRANSISTOR Search Results

    2GM TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    2GM TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA56 TRANSISTOR PNP SOT–23 FEATURES  General Purpose Amplifier Applications MARKING: 2GM 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


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    OT-23 MMBTA56 -10mA -100mA -100mA, 100MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Driver Transistors PNP Silicon LMBTA55WT1G LMBTA56WT1G S-LMBTA55WT1G S-LMBTA56WT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101


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    LMBTA55WT1G LMBTA56WT1G S-LMBTA55WT1G S-LMBTA56WT1G AEC-Q101 LMBTA55 LMBTA56 SC-70 PDF

    Marking 2GM

    Abstract: LMBTA56LT1G LMBTA55LT1G LMBTA56 2GM sot LMBTA55 2GM j sot23 6 device Marking 2GM 4
    Text: LESHAN RADIO COMPANY, LTD. Driver Transistors PNP Silicon LMBTA55LT1G LMBTA56LT1G We declare that the material of product compliance with RoHS requirements. 3 1 2 MAXIMUM RATINGS Rating Symbol Value LMBTA55 LMBTA56 Collector–Emitter Voltage V CEO –60 –80


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    LMBTA55LT1G LMBTA56LT1G LMBTA55 LMBTA56 236AB) LMBTA55LT1G OT-23 Marking 2GM LMBTA56LT1G LMBTA56 2GM sot 2GM j sot23 6 device Marking 2GM 4 PDF

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Driver Transistors PNP Silicon LMBTA55LT1G LMBTA56LT1G S-LMBTA55LT1G S-LMBTA56LT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101


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    LMBTA55LT1G LMBTA56LT1G S-LMBTA55LT1G S-LMBTA56LT1G AEC-Q101 LMBTA55 LMBTA56 236AB) LMBTA55LT1G PDF

    marking 2GM

    Abstract: LMBTA55WT1G 2GM transistor LMBTA55 sc70 marking 2H 2GM j marking 2GM x
    Text: LESHAN RADIO COMPANY, LTD. Driver Transistors PNP Silicon LMBTA55WT1G LMBTA56WT1G We declare that the material of product compliance with RoHS requirements. 3 1 MAXIMUM RATINGS Rating Symbol Value LMBTA55 LMBTA56 2 Unit Collector–Emitter Voltage V CEO –60


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    LMBTA55WT1G LMBTA56WT1G LMBTA55 LMBTA56 SC-70 LMBTA55WT1G marking 2GM 2GM transistor sc70 marking 2H 2GM j marking 2GM x PDF

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Driver Transistors PNP Silicon LMBTA55LT1G LMBTA56LT1G S-LMBTA55LT1G S-LMBTA56LT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101


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    LMBTA55LT1G LMBTA56LT1G S-LMBTA55LT1G S-LMBTA56LT1G AEC-Q101 LMBTA55 LMBTA56 236AB) LMBTA55LT1G PDF

    MMBTA56LT1

    Abstract: marking code 2GM SOT 23
    Text: MMBTA55LT1, MMBTA56LT1 MMBTA56LT1 is a Preferred Device Driver Transistors PNP Silicon http://onsemi.com Features • Pb−Free Package is Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage Value VCEO MMBTA55 MMBTA56 Collector −Base Voltage


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    MMBTA55LT1, MMBTA56LT1 MMBTA56LT1 MMBTA55 MMBTA56 MMBTA55LT1 OT-23 marking code 2GM SOT 23 PDF

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Driver Transistors PNP Silicon LMBTA55LT1G LMBTA56LT1G 3 COLLECTOR Pb-free package is available. The suffix G means Pb-free. 1 BASE 3 2 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol Value LMBTA55 LMBTA56 Collector–Emitter Voltage V


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    LMBTA55LT1G LMBTA56LT1G LMBTA55 LMBTA56 236AB) PDF

    2gm transistor

    Abstract: ota amplifier Modulation using OTA AB-180 OPA622 OPA660
    Text: APPLICATION BULLETIN Mailing Address: PO Box 11400 • Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd. • Tucson, AZ 85706 Tel: 602 746-1111 • Twx: 910-952-111 • Telex: 066-6491 • FAX (602) 889-1510 • Immediate Product Info: (800) 548-6132


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    OPA660 OPA622 2gm transistor ota amplifier Modulation using OTA AB-180 PDF

    NPN/transistor C 331

    Abstract: vacuum tubes AB-180 OPA622 OPA660 ota ic
    Text: APPLICATION BULLETIN Mailing Address: PO Box 11400 • Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd. • Tucson, AZ 85706 Tel: 602 746-1111 • Twx: 910-952-111 • Telex: 066-6491 • FAX (602) 889-1510 • Immediate Product Info: (800) 548-6132


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    OPA660 OPA622 NPN/transistor C 331 vacuum tubes AB-180 ota ic PDF

    2GM sot

    Abstract: MMBTA56LT1 2gm marking code 2gm transistor MMBTA55 MMBTA55LT1 MMBTA55LT3 MMBTA56 MMBTA56LT1G MMBTA56LT3
    Text: MMBTA55LT1, MMBTA56LT1 MMBTA56LT1 is a Preferred Device Driver Transistors PNP Silicon http://onsemi.com Features • Pb−Free Package is Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage Value Unit VCEO MMBTA55 MMBTA56 Collector −Base Voltage


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    MMBTA55LT1, MMBTA56LT1 MMBTA56LT1 MMBTA55 MMBTA56 MMBTA55LT1/D 2GM sot 2gm marking code 2gm transistor MMBTA55 MMBTA55LT1 MMBTA55LT3 MMBTA56 MMBTA56LT1G MMBTA56LT3 PDF

    Untitled

    Abstract: No abstract text available
    Text: Driver Transistors PNP Silicon MMBTA55LT1 MMBTA56LT1 3 COLLECTOR 1 BASE 3 2 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol Value MMBTA55 MMBTA56 Collector–Emitter Voltage V CEO –60 –80 Vdc Collector–Base Voltage V CBO –60 –80 Vdc Emitter–Base Voltage


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    MMBTA55LT1 MMBTA56LT1 MMBTA55 MMBTA56 236AB) AmbientMBTA56LT1 100mAdc, 10mAdc) PDF

    2GM sot

    Abstract: No abstract text available
    Text: ᄰ፿ྯ૵਌! General Purpose Transistors General Purpose Transistors FHTA56 ᄰ፿ྯ૵਌ DESCRIPTION & FEATURES 概述及特點 Complementary to FHTA06 FHTA06 互補 SOT-23 PIN ASSIGNMENT 引腳說明 PIN NAME FUNCTION PIN NUMBER 引腳序號 管腳符號


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    OT-23 FHTA56 FHTA06 OT-23 hFE1FHTA56 -10mA -100mA 2GM sot PDF

    Untitled

    Abstract: No abstract text available
    Text: MMBTA55 / MMBTA56 MMBTA55 / MMBTA56 Surface mount general purpose Si-epitaxial planar transistors Vielzweck Si-Epitaxial Planar-Transistoren für die Oberflächenmontage PNP PNP Version 2005-09-05 1.1 2.9 ±0.1 0.4 Type Code 1.3 ±0.1 2.5 max 3 2 1 1.9 Dimensions / Maße [mm]


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    MMBTA55 MMBTA56 OT-23 O-236) UL94V-0 MMBTA05 MMBTA06 MMBTA05, PDF

    Untitled

    Abstract: No abstract text available
    Text: SOT-23 Plastic-Encapsulate Transistors MMBTA55LT1 MMBTA56LT1 TRANSISTOR( PNP ) SOT—23 1. BASE 2. EMITTER 3. COLLECTOR 1.0 FEATURES Power dissipation PCM : 0.225 W(Tamb=25℃) Collector current ICM : -0.5 A Collector-base voltage VCBO : MMBTA55: -60 V


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    OT-23 MMBTA55LT1 MMBTA56LT1 MMBTA55: MMBTA56: MMBTA55 MMBTA56 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA55LT1 MMBTA56LT1 TRANSISTOR( PNP ) SOT—23 1. BASE 2. EMITTER 3. COLLECTOR 1.0 FEATURES Power dissipation PCM : 0.225 W(Tamb=25℃) Collector current


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    OT-23 MMBTA55LT1 MMBTA56LT1 MMBTA55: MMBTA56: MMBTA55 MMBTA56 MMBTA56LT1: PDF

    2GM sot-23 transistor

    Abstract: transistor MARKING 560 pnp sot23 TS560 marking 2GM 2GM TRANSISTOR
    Text: NEW PRODUCT NEW PRODUCT NEW PRODUCT MMBTA56 Small Signal Transistors PNP SOT-23 FEATURES t PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. t As complementary type, the NPN transistor MMBTA06 is recommended. t This transistor is also available in the


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    MMBTA56 OT-23 MMBTA06 MPSA56. OT-23 2GM sot-23 transistor transistor MARKING 560 pnp sot23 TS560 marking 2GM 2GM TRANSISTOR PDF

    2gm transistor

    Abstract: marking 2GM "MARKING CODE 2GM" 2GM sot PNP Epitaxial Silicon Transistor sot-23 MMBTA06 MMBTA56 MPSA56 marking code 2GM SOT 23
    Text: NEW PRODUCT NEW PRODUCT NEW PRODUCT MMBTA56 Small Signal Transistors PNP SOT-23 FEATURES ♦ PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. .122 (3.1) .118 (3.0) .016 (0.4) .056 (1.43) .052 (1.33) ♦ This transistor is also available in the


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    MMBTA56 OT-23 MPSA56. MMBTA06 OT-23 2gm transistor marking 2GM "MARKING CODE 2GM" 2GM sot PNP Epitaxial Silicon Transistor sot-23 MMBTA56 MPSA56 marking code 2GM SOT 23 PDF

    2GM sot-23 transistor

    Abstract: a56 transistor 2GM H transistor 2GM surface transistor 2GM sot 2gm transistor transistor A56 MMBTA55 2H SOT23 marking code 2GM SOT 23
    Text: BL Galaxy Electrical Production specification PNP General Purpose Transistor FEATURES z Epitaxial planar die construction. z Complementary NPN types available MMBTA55/A56 Pb Lead-free MMBTA05/MMBTA06 APPLICATIONS z Ideal for medium NPN amplification and switching.


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    MMBTA55/A56 MMBTA05/MMBTA06) OT-23 MMBTA55 MMBTA56 2GM sot-23 transistor a56 transistor 2GM H transistor 2GM surface transistor 2GM sot 2gm transistor transistor A56 MMBTA55 2H SOT23 marking code 2GM SOT 23 PDF

    marking 2GM

    Abstract: 2GM transistor marking M29 MMBTA56LT1 M292 2GM j MMBTA55 MMBTA55LT1 MMBTA56
    Text: LESHAN RADIO COMPANY, LTD. Driver Transistors PNP Silicon MMBTA55LT1 MMBTA56LT1 3 COLLECTOR 1 BASE 3 2 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol Value MMBTA55 MMBTA56 Collector–Emitter Voltage V CEO –60 –80 Vdc Collector–Base Voltage V CBO –60 –80


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    MMBTA55LT1 MMBTA56LT1 MMBTA55 MMBTA56 236AB) MMBTA55LT1 100mAdc, 10mAdc) marking 2GM 2GM transistor marking M29 MMBTA56LT1 M292 2GM j MMBTA56 PDF

    2gm transistor

    Abstract: vishay TRANSISTOR Sot-23 MARKING CODE 2GM sot-23 transistor 2GM sot marking code 2GM marking 2GM marking codes sot-23 2GM 20FEB02
    Text: MMBTA56 Vishay Semiconductors formerly General Semiconductor Small Signal Transistor PNP TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Top View Mounting Pad Layout .056 (1.43) .052 (1.33) 3 .016 (0.4) Pin Configuration 1 = Base 2 = Emitter 3 = Collector


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    MMBTA56 O-236AB OT-23) MMBTA06 100mA 100mA, 100mA 100MHz 2gm transistor vishay TRANSISTOR Sot-23 MARKING CODE 2GM sot-23 transistor 2GM sot marking code 2GM marking 2GM marking codes sot-23 2GM 20FEB02 PDF

    2gm transistor

    Abstract: vishay TRANSISTOR Sot-23 MARKING CODE 2GM sot MPSA56 MMBTA06 MMBTA56 2GM sot-23 transistor 20FEB02
    Text: MMBTA56 Vishay Semiconductors formerly General Semiconductor Small Signal Transistor PNP TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Top View Mounting Pad Layout .056 (1.43) .052 (1.33) 3 .016 (0.4) Pin Configuration 1 = Base 2 = Emitter 3 = Collector


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    MMBTA56 O-236AB OT-23) MMBTA06 100mA, 100mA 100MHz 20-Feb-02 2gm transistor vishay TRANSISTOR Sot-23 MARKING CODE 2GM sot MPSA56 MMBTA06 MMBTA56 2GM sot-23 transistor 20FEB02 PDF

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductort Driver Transistors MMBTA55LT1 MMBTA56LT1 PNP Silicon MMBTA56LT1 is a Preferred Device MAXIMUM RATINGS Rating Symbol MMBTA55 MMBTA56 Unit Collector–Emitter Voltage VCEO –60 –80 Vdc Collector–Base Voltage VCBO –60 –80 Vdc Emitter–Base Voltage


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    MMBTA55 MMBTA56 MMBTA55LT1 MMBTA56LT1 MMBTA56LT1 MMBTA55LT1 MMBTA55LT1/D PDF

    MMBTA55

    Abstract: No abstract text available
    Text: MMBTA55 / MMBTA56 MMBTA55 / MMBTA56 Surface mount general purpose Si-epitaxial planar transistors Vielzweck Si-Epitaxial Planar-Transistoren für die Oberflächenmontage PNP PNP Version 2005-09-05 1.1 2.9 ±0.1 0.4 Type Code 1.3 ±0.1 2.5 max 3 2 1 1.9 Dimensions / Maße [mm]


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    MMBTA55 MMBTA56 OT-23 O-236) UL94V-0 MMBTA05 MMBTA06 MMBTA05, PDF