2F0000 Search Results

2F0000 Result Highlights (2)

Part	ECAD Model	Manufacturer	Description	Download	Buy
10106262-F000002LF		Amphenol Communications Solutions	PwrBlade+® Connector, Power Connectors, 15ACP STB, Right Angle, Header.
10106262-F000003LF		Amphenol Communications Solutions	PwrBlade+®,Power Connectors, Right Angle, Header 15ACP

2F0000 Price and Stock

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Broadcom Limited HLMP-Y802-F0000 LED GREEN CLEAR T-1 T/H
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HLMP-Y802-F0000	Bulk	23,037		1	1 $0.56 10 $0.328 100 $0.56 1000 $0.15149 10000 $0.12072	Buy Now
Avnet Americas	HLMP-Y802-F0000	Bulk		22 Weeks	36,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Mouser Electronics	HLMP-Y802-F0000		14,644			1 $0.55 10 $0.329 100 $0.166 1000 $0.15 10000 $0.117	Buy Now
TME	HLMP-Y802-F0000		312		2	1 - 10 $0.283 100 $0.255 1000 $0.22 10000 $0.22	Buy Now
EBV Elektronik	HLMP-Y802-F0000		4,000	24 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
BOYD Laconia 780102F00000G 78010 EXTRUSION 2.95X1.34"X4.1'
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	780102F00000G	Box	143		1	1 $163.39 10 $152.499 100 $138.883 1000 $138.883 10000 $138.883	Buy Now
BOYD Laconia 657152F00000G 65715 EXTRUSION 0.39X1"X4'
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	657152F00000G	Box	91		1	1 $26.62 10 $23.62 100 $26.62 1000 $26.62 10000 $26.62	Buy Now
BOYD Laconia 637302F00000G 63730 EXTRUSION 2.25X2.996"X4'
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	637302F00000G	Box	30		1	1 $149.15 10 $132.294 100 $121.622 1000 $121.622 10000 $121.622	Buy Now
BOYD Laconia 783502F00000G 78350 EXTRUSION 3.37X1.95"X4.1'
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	783502F00000G	Box	22		1	1 $135.7 10 $120.372 100 $110.6628 1000 $110.6628 10000 $110.6628	Buy Now

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2F0000 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
w19b320 Abstract: No abstract text available Text: W19B320AT/B Data Sheet 4M x 8/2M × 16 BITS 3V FLEXIBLE BANK FLASH MEMORY Table of Contents1. GENERAL DESCRIPTION . 4 2. FEATURES . 4	Original	W19B320AT/B w19b320	PDF
48C20 Abstract: SA125 AT49BV640DT-70CU AT49BV640D AT49BV640DT AT49BV640D-70CU SWITCH SA125 278000 eprom Text: Features • Single Voltage Operation Read/Write: 2.65V - 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – One Hundred Twenty-seven 32K Word 64K Bytes Main Sectors with Individual Write Lockout	Original	3608C 48C20 SA125 AT49BV640DT-70CU AT49BV640D AT49BV640DT AT49BV640D-70CU SWITCH SA125 278000 eprom	PDF
M29W320DT Abstract: M29W320D M29W320DB TFBGA48 Text: M29W320DT M29W320DB 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ ACCESS TIME: 70, 90ns	Original	M29W320DT M29W320DB TSOP48 TFBGA63 TFBGA48 M29W320DT M29W320D M29W320DB TFBGA48	PDF
SAMSUNG MCP Abstract: ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor Text: Preliminary MCP MEMORY KBB0xB400M Document Title Multi-Chip Package MEMORY 64M Bit 8M x8/4M x16 Dual Bank NOR Flash *2 / 256M Bit (16Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History 0.0 Initial Draft (64M NOR Flash M-die_rev1.1)	Original	KBB0xB400M 16Mx16) 4Mx16) 80-Ball 80x12 SAMSUNG MCP ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor	PDF
CompactCellTM Static RAM Abstract: No abstract text available Text: PRELIMINARY Am45DL6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) CompactCellTM Static RAM DISTINCTIVE CHARACTERISTICS	Original	Am45DL6408G 16-Bit) 8-Bit/512 73-Ball limitation02 CompactCellTM Static RAM	PDF
GL032A Abstract: S71GL032A S71GL032 Text: S71GL032A Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 32 Megabit (2 M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash Memory and 16/8/4 Megabit (1M/512K/256K x 16-bit) Pseudo Static RAM Data Sheet ADVANCE INFORMATION Notice to Readers: The Advance Information status indicates that this	Original	S71GL032A 16-bit) 1M/512K/256K GL032A S71GL032	PDF
M15451E Abstract: No abstract text available Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD29F064115-X 64M-BIT CMOS LOW-VOLTAGE DUAL OPERATION FLASH MEMORY 4M-WORD BY 16-BIT WORD MODE PAGE MODE Description The µPD29F064115-X is a flash memory organized of 67,108,864 bits and 142 sectors. Sectors of this memory can	Original	PD29F064115-X 64M-BIT 16-BIT PD29F064115-X M15451E	PDF
Untitled Abstract: No abstract text available Text: W28J320B/T 32M 2M x 16/4M × 8 BOOT BLOCK FLASH MEMORY Table of Contents1. GENERAL DESCRIPTION. 3 2. FEATURES . 3	Original	W28J320B/T 16/4M	PDF
SA6954 Abstract: S29WS064N S29WS128N S29WS256N WS128N FFC00 Text: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PRELIMINARY Distinctive Characteristics Architectural Advantages Single 1.8 volt read, program and erase (1.70 to	Original	S29WSxxxN S29WS256N, S29WS128N, S29WS064N 16-Bit) SA6954 S29WS064N S29WS128N S29WS256N WS128N FFC00	PDF
Untitled Abstract: No abstract text available Text: K8D6x16UTM / K8D6x16UBM FLASH MEMORY Document Title 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 10, 2002 Preliminary 1.0 Final Specification May 22, 2002 Final 1.1 Revised	Original	K8D6x16UTM K8D6x16UBM 48TSOP1 16M/16M 08MAX	PDF
IN3064 Abstract: MX25L3225D Text: MX25L3225D MX25L3225D DATASHEET P/N: PM1432 1 REV. 0.00, SEP. 19, 2008 MX25L3225D Contents FEATURES . 5	Original	MX25L3225D PM1432 IN3064 MX25L3225D	PDF
740-0007 Abstract: EN29GL064 6A000 Text: Preliminary EN29GL064 EN29GL064 64 Megabit 8192K x 8-bit / 4096K x 16-bit Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only FEATURES • Suspend and Resume commands for Program and Erase operations • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and	Original	EN29GL064 8192K 4096K 16-bit) 740-0007 EN29GL064 6A000	PDF
3582B Abstract: AT49BV322D AT49BV322DT AT49BV Text: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Sixty-three 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout	Original	3582B AT49BV322D AT49BV322DT AT49BV	PDF
110R Abstract: S29GL128N Text: Am29LV6402M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL128N supersedes Am29LV6402M and is the factory-recommended migration path. Please refer to the S29GL128N Data Sheet for specifications and ordering information. Availability of this	Original	Am29LV6402M S29GL128N 110R	PDF

LH28F640BFHG-PBTL70A Abstract: No abstract text available Text: PRELIMINARY PRODUCT SPECIFICATION Integrated Circuits Group LH28F640BFHG-PBTL70A Flash Memory 64Mbit 4Mbitx16 (Model Number: LHF64FH9) Spec. Issue Date: September 27, 2004 Spec No: FM045022A LHF64FH9 • Handle this document carefully for it contains material protected by international copyright law. Any reproduction,	Original	LH28F640BFHG-PBTL70A 64Mbit 4Mbitx16) LHF64FH9) FM045022A LHF64FH9 LH28F640BFHG-PBTL70A	PDF
FPT-48P-M19 Abstract: No abstract text available Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20904-2E FLASH MEMORY CMOS 32 M 4 M x 8/2 M × 16 BIT Dual Operation MBM29DL32TF/BF-70 • DESCRIPTION The MBM29DL32TF/BF are a 32 M-bit, 3.0 V-only Flash memory organized as 4 M bytes of 8 bits each or 2 M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V	Original	DS05-20904-2E MBM29DL32TF/BF-70 MBM29DL32TF/BF MBM29DL32TF/BF F0305 FPT-48P-M19	PDF
LRS1830 Abstract: No abstract text available Text: PRELIMINARY PRODUCT SPECIFICATIONS Integrated Circuits Group LRS1830 Stacked Chip 256M x16 Boot Block Flash and 32M (x16) SCRAM (Model No.: LRS1830) Spec No.: EL14Z046 Issue Date: January 14, 2003 sharp L R S1 8 3 0 x Handle this document carefully for it contains material protected by international copyright law.	Original	LRS1830 LRS1830) EL14Z046 LRS1830	PDF
M29DW323D Abstract: TSOP48 outline M29DW323DB M29DW323DT M29DW324D M29DW324DB M29DW324DT Text: M29DW324DT M29DW324DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional) ACCESS TIME: 70, 90ns	Original	M29DW324DT M29DW324DB TSOP48 M29DW323D TSOP48 outline M29DW323DB M29DW323DT M29DW324D M29DW324DB M29DW324DT	PDF
M29W640DB Abstract: M29W640D M29W640DT A0-A21 6A000 Text: M29W640DT M29W640DB 64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) ■ ACCESS TIME: 70, 90 ns	Original	M29W640DT M29W640DB TSOP48 TFBGA63 M29W640DB M29W640D M29W640DT A0-A21 6A000	PDF
FS4012D Abstract: No abstract text available Text: INDUSTRIAL AND MILITARY QUALITY SUBMINIATURE-D CONNECTORS CBC Series FOR MILITARY AND SHELTERED INDOOR/OUTDOOR ENVIRONMENTAL APPLICATIONS CRIMP REMOVABLE CONTACT SERIES C B C 7W 2F00000 C B C 17W 2M 00000 STANDARD SHELL ASSEMBLY t y p ic a l c o n n ec to r	OCR Scan	2F00000 10Z00 S4012D 1F100T20 FS4012D T00533Ô	PDF
29F032B Abstract: m29f032b Text: AMDZ1 Am29F032B 32 Megabit 4 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation ■ — Minimizes system level power requirem ents ■ ■ M anufactured on 0.32 \im process technology	OCR Scan	Am29F032B 20-year 29F032B 29F032B m29f032b	PDF
AM29F032 Abstract: am29f032b-120 AM29F032B-90 Text: AM D il Am29F032B 32 Megabit 4 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.32 pm process technology	OCR Scan	Am29F032B 20-year 40-pin 44-pin AM29F032 am29f032b-120 AM29F032B-90	PDF
L323C Abstract: No abstract text available Text: ADVANCE INFORMATION AMDZ1 Am29DL32xC 32 Megabit 4 M x 8 -Bit/2 M x 16-Bit CMOS 3.0 Volt-only, Sim ultaneous Operation Flash Mem ory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank w hile	OCR Scan	Am29DL32xC 16-Bit) 29DL32xC L323C	PDF
032XM Abstract: No abstract text available Text: ADVANCE INFORMATION AMDB Am29LV033C 32 Megabit 4 M x 8-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES SOFTWARE FEATURES • Zero Power Operation ■ — Sophisticated power management circuits reduce	OCR Scan	Am29LV033C 63-ball 40-pin 032XM	PDF

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2F0000 Search Results

2F0000 Result Highlights (2)

2F0000 Price and Stock

Broadcom Limited HLMP-Y802-F0000

BOYD Laconia 780102F00000G

BOYD Laconia 657152F00000G

BOYD Laconia 637302F00000G

BOYD Laconia 783502F00000G

2F0000 Datasheets Context Search

w19b320

48C20

M29W320DT

SAMSUNG MCP

CompactCellTM Static RAM

GL032A

M15451E

Untitled

SA6954

Untitled

IN3064

740-0007

3582B

110R

LH28F640BFHG-PBTL70A

FPT-48P-M19

LRS1830

M29DW323D

M29W640DB

FS4012D

29F032B

AM29F032

L323C

032XM