marking 2f 3
Abstract: MMBT2222A MMBT2907A marking 2f
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 MMBT2907A Plastic-Encapsulate Transistors SOT-23 TRANSISTOR PNP FEATURES z Epitaxial planar die construction z Complementary NPN Type available(MMBT2222A) 1. BASE 2. EMITTER Marking: 2F 3. COLLECTOR
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OT-23
MMBT2907A
MMBT2222A)
-10mA
-500mA
-150mA
-15mA
-500mA
-50mA
marking 2f 3
MMBT2222A
MMBT2907A
marking 2f
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT2907A SOT-23 TRANSISTOR PNP FEATURES z Epitaxial planar die construction z Complementary NPN Type available(MMBT2222A) 1. BASE 2. EMITTER Marking: 2F 3. COLLECTOR
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OT-23
MMBT2907A
OT-23
MMBT2222A)
Temperature-10V
-10mA
-500mA
-150mA
-15mA
-500mA
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT2907A TRANSISTOR PNP SOT-23 1. BASE 2. EMITTER FEATURES y Epitaxial planar die construction y Complementary NPN Type available(MMBT2222A) 3. COLLECTOR MARKING:2F
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OT-23
MMBT2907A
OT-23
MMBT2222A)
-500mA
-150mA
-15mA
-500mA
-50mA
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CMBT2907
Abstract: CMBT2907A
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT2907 CMBT2907A SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P silicon transistors Marking CMBT2907 = 2B CMBT2907A = 2F PACKAGE OUTLINE DETAILS
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OT-23
CMBT2907
CMBT2907A
500mA;
C-120
CMBT2907
CMBT2907A
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT2907 CMBT2907A SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P silicon transistors Marking CMBT2907 = 2B CMBT2907A = 2F PACKAGE OUTLINE DETAILS
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OT-23
CMBT2907
CMBT2907A
500mA;
C-120
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2SA1037KGP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD 2SA1037KGP SURFACE MOUNT PNP Silicon Transistor VOLTAGE 50 Volts CURRENT 150 mAmpere APPLICATION * Medium Power Amplifier . FEATURE * Surface mount package. SOT-23 SOT-23 .055 (1.40) .047 (1.20) MARKING * 2F- .019 (0.50) (2) .103 (2.64)
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2SA1037KGP
OT-23)
OT-23
150mW
120mW
2SA1037KGP
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CMBT2907
Abstract: CMBT2907A
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBT2907 CMBT2907A SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P silicon transistors Marking CMBT2907 = 2B CMBT2907A = 2F PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm
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ISO/TS16949
OT-23
CMBT2907
CMBT2907A
500mA;
C-120
CMBT2907
CMBT2907A
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2F PNP SOT23
Abstract: marking 2f 2f transistor SOt23
Text: MMBT2907A SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Epitaxial planar die construction Complementary NPN Type available(MMBT2222A) MARKING:2F Dimensions in inches and (millimeters) MAXIMUM RATINGS(TA=25℃ unless otherwise noted)
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MMBT2907A
OT-23
OT-23
MMBT2222A)
-150mA
-15mA
-10mA
-500mA
2F PNP SOT23
marking 2f
2f transistor SOt23
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Untitled
Abstract: No abstract text available
Text: Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 MMBT2907A Features • • Surface Mount SOT-23 Package Capable of 350mWatts of Power Dissipation PNP General Purpose Amplifier C Pin Configuration Top View 2F B E SOT-23
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MMBT2907A
OT-23
350mWatts
OT-23
10mAdc,
30Vdc,
IC/10
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BC849
Abstract: BC849B BC849C BC850 BC850B BC850C
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BC849 = 2D BC849B = 2B BC849C = 2C BC850 = 2H BC850B = 2F 8C850C = 2G PACKAGE OUTLINE DETAILS
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ISO/TS16949
OT-23
BC849
BC850
BC849B
BC849C
BC850B
8C850C
BC849
BC849B
BC849C
BC850
BC850B
BC850C
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2f bc850
Abstract: BC849 BC849B BC849C BC850 BC850B BC850C
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BC849 = 2D BC849B = 2B BC849C = 2C BC850 = 2H BC850B = 2F 8C850C = 2G
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OT-23
BC849
BC850
BC849B
BC849C
BC850B
8C850C
2f bc850
BC849
BC849B
BC849C
BC850
BC850B
BC850C
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Untitled
Abstract: No abstract text available
Text: UTC MMBT2907A PNP EPITAXIAL PLANAR TRANSISTOR PNP GENERAL PURPOSE AMPLIFIER FEATURES This UTC MMBT2907A is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. 2 1 MARKING 3 2F SOT-23 1:EMITTER 2:BASE 3:COLLECTOR
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MMBT2907A
MMBT2907A
OT-23
QW-R206-030
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pnp 2f
Abstract: No abstract text available
Text: UTC MMBT2907A PNP EPITAXIAL PLANAR TRANSISTOR PNP GENERAL PURPOSE AMPLIFIER FEATURES This UTC MMBT2907A is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. 2 1 MARKING 3 2F SOT-23 1:EMITTER 2:BASE 3:COLLECTOR
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MMBT2907A
MMBT2907A
OT-23
QW-R206-030
pnp 2f
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MARKING 2F SOT23
Abstract: sot23 marking 2f 2f bc850 BC850 marking 2f 3
Text: SEMICONDUCTOR BC850 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 2F 1 2 Item Marking Description Device Mark 2 BC850 hFE Grade F F, G * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
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BC850
OT-23
MARKING 2F SOT23
sot23 marking 2f
2f bc850
BC850
marking 2f 3
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PN2907A
Abstract: No abstract text available
Text: PZT2907A MMBT2907A C C E E C B TO-92 B B SOT-23 E C SOT-223 Mark: 2F PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. Absolute Maximum Ratings*
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PZT2907A
MMBT2907A
OT-23
OT-223
PN2907A
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CBVK741B019
Abstract: F63TNR MMBT2907A PN2222N PN2907A PZT2907A D3000
Text: MMBT2907A PZT2907A C C E E C B TO-92 B B SOT-23 E C SOT-223 Mark: 2F PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. Absolute Maximum Ratings*
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MMBT2907A
PZT2907A
OT-23
OT-223
CBVK741B019
F63TNR
MMBT2907A
PN2222N
PN2907A
PZT2907A
D3000
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PN2222N
Abstract: CBVK741B019 F63TNR MMBT2907A PN2907A PZT2907A 2F PNP SOT23
Text: MMBT2907A PZT2907A C C E E C B TO-92 B B SOT-23 E C SOT-223 Mark: 2F PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. Absolute Maximum Ratings*
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MMBT2907A
PZT2907A
OT-23
OT-223
PN2222N
CBVK741B019
F63TNR
MMBT2907A
PN2907A
PZT2907A
2F PNP SOT23
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ic 701
Abstract: 602 SOT MMBT2907A
Text: 9261 Owensmouth Ave. Chatsworth, Ca 91311 Phone: 818 701-4933 Fax: (818) 701-4939 MMBT2907A Features • • Surface Mount SOT-23 Package Capable of 350mWatts of Power Dissipation PNP General Purpose Amplifier C Pin Configuration Top View 2F B E SOT-23 Electrical Characteristics @ 25°C Unless Otherwise Specified
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MMBT2907A
OT-23
350mWatts
OT-23
10mAdc,
30Vdc,
IC/10
ic 701
602 SOT
MMBT2907A
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pn2907a fairchild
Abstract: MMBT2907A PN2907A PZT2907A 2f pnp
Text: MMBT2907A PZT2907A C C E E C B TO-92 B B SOT-23 E C SOT-223 Mark: 2F PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. Absolute Maximum Ratings*
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MMBT2907A
PZT2907A
OT-23
OT-223
pn2907a fairchild
MMBT2907A
PN2907A
PZT2907A
2f pnp
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marking code nt amplifier
Abstract: MARKING 2907A 2907A BF
Text: MMBT2907A PZT2907A C C E E C B TO-92 B B SOT-23 E C SOT-223 Mark: 2F PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. Absolute Maximum Ratings*
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PN2907A
MMBT2907A
PZT2907A
PN2907A
MMBT2907A
OT-23
OT-223
O-92-3
marking code nt amplifier
MARKING 2907A
2907A BF
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Untitled
Abstract: No abstract text available
Text: FMMT2907 FMMT2907A SOT23 PNP SILICON PLANAR SWITCHING TRANSISTORS PARTMARKING DETAILS: FMMT2907 - 2B FMMT2907A - 2F FMMT2907R - 4P FMMT2907AR - 5P ABSOLUTE MAXIMUM RATINGS PARAM ETER SYM BOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
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OCR Scan
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FMMT2907
FMMT2907A
FMMT2907
FMMT2907A
FMMT2907R
FMMT2907AR
200fts.
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B 660 TG
Abstract: No abstract text available
Text: BC847 BC849 BC846 BC848 BC850 SOT23 IMPN SILICON PLANAR GENERAL PURPOSE TRANSISTORS PARTMARKING DETAILS:BC848B - 1K BC846A - 1A BC846B - 1B BC848C - 1L 1E BC849B - 2B BC847A - BC847B - 1F BC849C - 2C 1G BC850B - 2F BC848A - 1J BC850C - 2G BC847C - ABSOLUTE MAXIMUM RATINGS
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BC847
BC849
BC846
BC848
BC850
BC848B
BC846A
BC846B
BC848C
BC849B
B 660 TG
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PN2907A
Abstract: sot-23 M
Text: / MMPQ2907/ NMT2907 I PZT2907A Discrete POWER & Signal Technologies National Semi conduct or ' " MMBT2907A PN2907A PZT2907A SOT-23 SOT-223 M ark: 2F NMT2907 PN2907A I MMBT2907A MMPQ2907 SOIC-16 C PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier
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MMPQ2907/
NMT2907
PZT2907A
PN2907A
MMBT2907A
OT-23
OT-223
PN2907A
sot-23 M
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PN2907A
Abstract: No abstract text available
Text: PN2907A MMBT2907A TO-92 SOT-23 PZT2907A SOT-223 Mark: 2F MMPQ2907 NMT2907 SOT-6 Bi Mark: 200 SOIC-16 PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from
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PN2907A
MMBT2907A
OT-23
PZT2907A
OT-223
MMPQ2907
NMT2907
SOIC-16
QD33415
PN2907A
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