PG12FBUSC
Abstract: No abstract text available
Text: SEMICONDUCTOR PG12FBUSC MARKING SPECIFICATION USC PACKAGE 1. Marking method Laser Marking 2. Marking 2 2 0 1 2F 1 1 No. Item Marking Description Device Mark 2F PG12FBUSC hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
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PG12FBUSC
PG12FBUSC
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PG12FBUSV
Abstract: No abstract text available
Text: SEMICONDUCTOR PG12FBUSV MARKING SPECIFICATION USV PACKAGE 1. Marking method Laser Marking 2. Marking 0 1 2F 1 2 3 No. Item Marking Description Device Mark 2F PG12FBUSV hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Dot ● Pin 1 Index
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PG12FBUSV
PG12FBUSV
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Iron Circuit Diagram
Abstract: DS21G DS23G MST02 westinghouse transformer DS171G WP832 DS266 WP930 5-20R Gang Receptacles
Text: 38-39.qxp 8/11/2010 10:28 AM Page 39 Covers for Cast Iron or Aluminum Device Boxes 2F Single Gang 2F Ordering Information Blank cover for enclosing splices and taps where device not used. Description Material Cat. # Surface Flush Sheet aluminum Sheet steel
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DS100
DSS100
DS24G
FS031
GASK91
EXF11
EXF21
C3310
Iron Circuit Diagram
DS21G
DS23G
MST02
westinghouse transformer
DS171G
WP832
DS266
WP930
5-20R Gang Receptacles
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ir1f
Abstract: 10MQ040N 10MQ100N 2f marking code 036 marking diode ir1f 10MQ060N 15MQ040N 9749 1F marking
Text: SMA PART MARKING PART NUMBER EXAMPLES Example: 10MQ040N INTERNATIONAL RECTIFIER IDENTIFICATION PART NUMBER IR1F 9749 CATHODE BAND SIDE 1F = 10MQ040N 1H = 10MQ060N 1J = 10MQ100N 2F = 15MQ040N DATE CODE YYWW YY = YEAR WW = WEEK
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10MQ040N
10MQ060N
10MQ100N
15MQ040N
ir1f
10MQ040N
10MQ100N
2f marking code
036 marking
diode ir1f
10MQ060N
15MQ040N
9749
1F marking
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marking 2f 3
Abstract: MMBT2222A MMBT2907A marking 2f
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 MMBT2907A Plastic-Encapsulate Transistors SOT-23 TRANSISTOR PNP FEATURES z Epitaxial planar die construction z Complementary NPN Type available(MMBT2222A) 1. BASE 2. EMITTER Marking: 2F 3. COLLECTOR
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OT-23
MMBT2907A
MMBT2222A)
-10mA
-500mA
-150mA
-15mA
-500mA
-50mA
marking 2f 3
MMBT2222A
MMBT2907A
marking 2f
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT2907A SOT-23 TRANSISTOR PNP FEATURES z Epitaxial planar die construction z Complementary NPN Type available(MMBT2222A) 1. BASE 2. EMITTER Marking: 2F 3. COLLECTOR
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OT-23
MMBT2907A
OT-23
MMBT2222A)
Temperature-10V
-10mA
-500mA
-150mA
-15mA
-500mA
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT2907A TRANSISTOR PNP SOT-23 1. BASE 2. EMITTER FEATURES y Epitaxial planar die construction y Complementary NPN Type available(MMBT2222A) 3. COLLECTOR MARKING:2F
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OT-23
MMBT2907A
OT-23
MMBT2222A)
-500mA
-150mA
-15mA
-500mA
-50mA
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CMBT2907
Abstract: CMBT2907A
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT2907 CMBT2907A SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P silicon transistors Marking CMBT2907 = 2B CMBT2907A = 2F PACKAGE OUTLINE DETAILS
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OT-23
CMBT2907
CMBT2907A
500mA;
C-120
CMBT2907
CMBT2907A
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT2907 CMBT2907A SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P silicon transistors Marking CMBT2907 = 2B CMBT2907A = 2F PACKAGE OUTLINE DETAILS
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OT-23
CMBT2907
CMBT2907A
500mA;
C-120
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2SA1037KGP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD 2SA1037KGP SURFACE MOUNT PNP Silicon Transistor VOLTAGE 50 Volts CURRENT 150 mAmpere APPLICATION * Medium Power Amplifier . FEATURE * Surface mount package. SOT-23 SOT-23 .055 (1.40) .047 (1.20) MARKING * 2F- .019 (0.50) (2) .103 (2.64)
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2SA1037KGP
OT-23)
OT-23
150mW
120mW
2SA1037KGP
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CMBT2907
Abstract: CMBT2907A
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBT2907 CMBT2907A SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P silicon transistors Marking CMBT2907 = 2B CMBT2907A = 2F PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm
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ISO/TS16949
OT-23
CMBT2907
CMBT2907A
500mA;
C-120
CMBT2907
CMBT2907A
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2F PNP SOT23
Abstract: marking 2f 2f transistor SOt23
Text: MMBT2907A SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Epitaxial planar die construction Complementary NPN Type available(MMBT2222A) MARKING:2F Dimensions in inches and (millimeters) MAXIMUM RATINGS(TA=25℃ unless otherwise noted)
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MMBT2907A
OT-23
OT-23
MMBT2222A)
-150mA
-15mA
-10mA
-500mA
2F PNP SOT23
marking 2f
2f transistor SOt23
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BC849
Abstract: BC849B BC849C BC850 BC850B BC850C
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BC849 = 2D BC849B = 2B BC849C = 2C BC850 = 2H BC850B = 2F 8C850C = 2G PACKAGE OUTLINE DETAILS
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ISO/TS16949
OT-23
BC849
BC850
BC849B
BC849C
BC850B
8C850C
BC849
BC849B
BC849C
BC850
BC850B
BC850C
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2f bc850
Abstract: BC849 BC849B BC849C BC850 BC850B BC850C
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BC849 = 2D BC849B = 2B BC849C = 2C BC850 = 2H BC850B = 2F 8C850C = 2G
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OT-23
BC849
BC850
BC849B
BC849C
BC850B
8C850C
2f bc850
BC849
BC849B
BC849C
BC850
BC850B
BC850C
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pnp 2f
Abstract: No abstract text available
Text: UTC MMBT2907A PNP EPITAXIAL PLANAR TRANSISTOR PNP GENERAL PURPOSE AMPLIFIER FEATURES This UTC MMBT2907A is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. 2 1 MARKING 3 2F SOT-23 1:EMITTER 2:BASE 3:COLLECTOR
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MMBT2907A
MMBT2907A
OT-23
QW-R206-030
pnp 2f
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pnp 2f
Abstract: marking 2F
Text: UTC MMBT2907A PNP EPITAXIAL PLANAR TRANSISTOR PNP GENERAL PURPOSE AMPLIFIER FEATURES This UTC MMBT2907A is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. 1 2 MARKING 3 2F SOT-323 1:EMITTER 2:BASE 3:COLLECTOR
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MMBT2907A
MMBT2907A
OT-323
QW-R220-001
pnp 2f
marking 2F
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JESD79-2B
Abstract: CR88 DDR2-667 STLS2E02 STLS2F01 1013tdi
Text: STLS2F02-LP high performance 64-bit superscalar MIPS Loongson 2F microprocessor Preliminary Data Features • 64-bit superscalar architecture ■ 800 MHz clock frequency ■ Single/double precision floating-point units ■ New streaming multimedia instruction set
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STLS2F02-LP
64-bit
DDR2-667
27x27
JESD79-2B
CR88
STLS2E02
STLS2F01
1013tdi
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JESD79-2B
Abstract: 0x01000202 CR88 DDR2-667 STLS2E02 STLS2F01 Loongson
Text: STLS2F02-LP high performance 64-bit superscalar MIPS Loongson 2F microprocessor Preliminary Data Features • 64-bit superscalar architecture ■ 800 MHz clock frequency ■ Single/double precision floating-point units ■ New streaming multimedia instruction set
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STLS2F02-LP
64-bit
DDR2-667
27x27
JESD79-2B
0x01000202
CR88
STLS2E02
STLS2F01
Loongson
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MARKING 2F SOT23
Abstract: sot23 marking 2f 2f bc850 BC850 marking 2f 3
Text: SEMICONDUCTOR BC850 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 2F 1 2 Item Marking Description Device Mark 2 BC850 hFE Grade F F, G * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
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BC850
OT-23
MARKING 2F SOT23
sot23 marking 2f
2f bc850
BC850
marking 2f 3
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CMBT2907
Abstract: CMBT2907A
Text: CMBT2907 CMBT2907A HL SILICON PLANAR EPITAXIAL TRANSISTORS P-N -P silicon transistors PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Marking CMBT2907 = 2B CMBT2907A = 2F _3.0 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 _L02_
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CMBT2907
CMBT2907A
CMBT2907
500mA;
150mA;
CMBT2907A
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Untitled
Abstract: No abstract text available
Text: CMBT2907 CMBT2907A »IL SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P silicon transistors Marking CMBT2907 = 2B CMBT2907A = 2F PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4
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CMBT2907
CMBT2907A
150mA;
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Untitled
Abstract: No abstract text available
Text: OIL CMBT2907 CMBT2907A SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P silicon transistors Marking PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm CMBT2907 = 2B CMBT2907A = 2F JS.O 2.8 0»14 0.48 038 3 Pin configuration 1 = BASE 2 * EMITTER 2.6 2.4 3 = COLLECTOR
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CMBT2907
CMBT2907A
CMBT2907
150mA;
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BC850
Abstract: BC850B BCS49 BC849 BC849B BC849C BC850C 8C850
Text: BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N -P-N transistors Marking BC849 = 2D BC849B = 2B BC849C = 2C BC850 = 2H BC850B = 2F 8C850C = 2G Pin configuration PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm J5.0 2.8 0.14 0.48 0.38 2.6 2.4 1 = BASE 2 = EMITTER
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BC849
BC850
BC849B
BC849C
BC850B
8C850C
BC849
BC850
BC850B
BCS49
BC849B
BC849C
BC850C
8C850
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MARKING 7A SOT89
Abstract: SXT2907 SXT2907A T2907A
Text: SIEMENS PNP Silicon Switching Transistor SXT 2907 A • High current gain: 0.1 mA to 500 mA • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SXT 2907 A 2F Q68000-A8300 B SOT-89 C E Maximum Ratings
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Q68000-A8300
OT-89
EHP00899
MARKING 7A SOT89
SXT2907
SXT2907A
T2907A
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