final de carrera
Abstract: 3RK1904-2AB01 3RK1205-0B sensores de carrera puente h K45 S2 3RK1205-0BQ00-0AA3 FABRICANTE F 3RK1901-1AA00 led rojo
Text: Kompaktmodul K45 2F-E Safety 3RK1205-0BQ00-0AA3 Compact Module K45 2F-E Safety Module compact K45 2F-E Safety Módulo compacto K45 2F-E Safety Modulo compatto K45 2F-E Safety Módulo compacto K45 2F-E Safety IEC 61508 EN 954-1 us IP 65/ IP 67 SAFETY AT WORK
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3RK1205-0BQ00-0AA3
3RK1701-5KB16-0AA0
IP65/IP67
3RK1901-2
final de carrera
3RK1904-2AB01
3RK1205-0B
sensores de carrera
puente h
K45 S2
3RK1205-0BQ00-0AA3
FABRICANTE F
3RK1901-1AA00
led rojo
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Magtek 21006516
Abstract: iso 7811-2 21006516 magtek ISO 7811-6 MAGNETIC HEAD iso 7811-2 2001 2F SMD MAG-TEK MAGNETIC HEAD circuit
Text: Magnetic Stripe F/2F Read/Decode Integrated Circuit 21006516 SMD SOIC General Information The F/2F Read/Decode Integrated Circuit in intended for use in recovering F/2F encoded data received from a magnetic head. Features • 150 to more than 12,000 F/2F bits per second
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tensile strength crimping pull test
Abstract: F948 50N24
Text: Data downloaded from http://www.angliac.com - the website of Anglia - tel: 01945 474747 Technical characteristics Types F, FM, 2F and F9 Number of contacts Current carrying capacity Type F Type FM Type 2F Type F9 48, 32 45 max. 24 max. 9 Contact spacing mm
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94-V0
tensile strength crimping pull test
F948
50N24
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erf150w
Abstract: 601152 ERF10 ERX2S
Text: Power Type Resistors Quick Guide Products Type Features 0.5 ERG12S 1 ERG1S, 1F Metal Oxide Film Resistors Small Size ERG2S, 2F Non flammable coating Small size 5 ERG5S, 5F 0.5 ERX12S 1 ERX1S,1F ERX2S, 2F Non flammable coating Low resistance value Metal Film
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ERG12S
ERX12S
erf150w
601152
ERF10
ERX2S
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PLQP0032GB-A
Abstract: R5F212E2DFP R5F212E2NFP R5F212E4DFP R5F212E4NFP 0167H
Text: PRELIMINARY Notice: This is not a final specification. Some parametric limits are subject to change. R8C/2E Group, R8C/2F Group RENESAS MCU 1. REJ03B0222-0010 Rev.0.10 Aug 01, 2007 Overview 1.1 Features The R8C/2E Group and R8C/2F Group of single-chip MCUs incorporates the R8C/Tiny Series CPU core,
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REJ03B0222-0010
PLQP0032GB-A
R5F212E2DFP
R5F212E2NFP
R5F212E4DFP
R5F212E4NFP
0167H
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G6K-2F package and tolerance
Abstract: No abstract text available
Text: G6K Surface Mounting Relay Surface Mounting Relay with the World’s Smallest Mounting Area • Subminiature model as small as 5.2 H x 6.5 (W) × 10 (L) mm is ideal for high-density mounting (G6K(U)-2F(-Y). • Low profile of 5.2 mm improves mounting efficiency (G6K(U)-2F(-Y).
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K106-E1-06
G6K-2F package and tolerance
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KP15R25
Abstract: No abstract text available
Text: SHINDENGEN TSS KP Series KP15R25 SMD OUTLINE DIMENSIONS Case : 2F Unit : mm RATINGS ●Absolute Maximum Ratings Item Storage Temperature Junction Temperature Maximum Off-State Voltage Surge On-State Current ●Electrical Characteristics (Tl=25℃) Item Breakover Voltage
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KP15R25
10/1000s,
10/200s,
8/20s,
00V/s
KP15R25
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KP10N14
Abstract: No abstract text available
Text: SHINDENGEN TSS KP Series KP10N14 SMD OUTLINE DIMENSIONS Case : 2F Unit : mm RATINGS ●Absolute Maximum Ratings Item Storage Temperature Junction Temperature Maximum Off-State Voltage Surge On-State Current ●Electrical Characteristics (Tl=25℃) Item Breakover Voltage
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KP10N14
10/1000s,
10/200s,
8/20s,
00V/s
KP10N14
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KP15L08
Abstract: No abstract text available
Text: SHINDENGEN TSS KP Series SMT OUTLINE DIMENSIONS KP15L08 Case : 2F Unit : mm RATINGS Absolute Maximum Ratings Item Storage Temperature Junction Temperature Maximum Off-State Voltage Surge On-State Current Electrical Characteristics (Tl=25) Item Breakover Voltage
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KP15L08
KP15L08
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smd transistor 2f
Abstract: smd 2f 2f smd transistor Diode smd 2f KP10L06
Text: SHINDENGEN TSS KP Series KP10L06 SMD OUTLINE DIMENSIONS Case : 2F Unit : mm RATINGS ●Absolute Maximum Ratings Item Storage Temperature Junction Temperature Maximum Off-State Voltage Surge On-State Current ●Electrical Characteristics (Tl=25℃) Item Breakover Voltage
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KP10L06
10/1000s,
10/200s,
8/20s,
00V/s
smd transistor 2f
smd 2f
2f smd transistor
Diode smd 2f
KP10L06
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SHINDENGEN
Abstract: KP10R25
Text: SHINDENGEN TSS KP Series KP10R25 SMD OUTLINE DIMENSIONS Case : 2F Unit : mm RATINGS ●Absolute Maximum Ratings Item Storage Temperature Junction Temperature Maximum Off-State Voltage Surge On-State Current ●Electrical Characteristics (Tl=25℃) Item Breakover Voltage
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KP10R25
10/1000s,
10/200s,
8/20s,
00V/s
SHINDENGEN
KP10R25
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Untitled
Abstract: No abstract text available
Text: SHINDENGEN TSS KP Series KP10LU07 SMT OUTLINE DIMENSIONS Case : 2F Unit : mm RATINGS Absolute Maximum Ratings Item Storage Temperature Junction Temperature Maximum Off-State Voltage Surge On-State Current Surge On-State Current Electrical Characteristics (Tl=25)
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KP10LU07
160kHz
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Untitled
Abstract: No abstract text available
Text: SHINDENGEN TSS KP Series SMT OUTLINE DIMENSIONS KP8LU07 Case : 2F Unit : mm RATINGS Absolute Maximum Ratings Item Storage Temperature Junction Temperature Maximum Off-State Voltage Surge On-State Current Surge On-State Current Electrical Characteristics (Tl=25)
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KP8LU07
10erature
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Untitled
Abstract: No abstract text available
Text: SHINDENGEN TSS KP Series KP10N12 SMT OUTLINE DIMENSIONS Case : 2F Unit : mm RATINGS Absolute Maximum Ratings Item Storage Temperature Junction Temperature Maximum Off-State Voltage Surge On-State Current Symbol Tstg Tj VDRM ITSM Electrical Characteristics (Tl=25)
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KP10N12
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S20VTA80
Abstract: Shindengen Electric Mfg.
Text: SHINDENGEN 3 Phase Bridge Diode Diode Module OUTLINE DIMENSIONS S20VTA80 CaseCase : 2F: SVTA Unit : mm 800V 20A FEATURES ●Dual In-Line Package ●Compact 3 phase bridge ●High IFSM ●Applicable to mount on glass-epoxy substrate (VTA type) APPLICATION
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S20VTA80
S20VTAx
S20VTA80
Shindengen Electric Mfg.
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"Power Diode" 10A 800v
Abstract: S30VTA80 high Forward Voltage Diode
Text: SHINDENGEN 3 Phase Bridge Diode Diode Module OUTLINE DIMENSIONS S30VTA80 CaseCase : 2F: SVTA Unit : mm 800V 30A FEATURES ●Dual In-Line Package ●Compact 3 phase bridge ●High IFSM ●Applicable to mount on glass-epoxy substrate (VTA type) APPLICATION
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S30VTA80
S30VTAx
"Power Diode" 10A 800v
S30VTA80
high Forward Voltage Diode
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S10VT60
Abstract: No abstract text available
Text: SHINDENGEN 3 Phase Bridge Diode Diode Module OUTLINE DIMENSIONS S10VT60 Case : 2F: SVT Case Unit : mm 600V 10A FEATURES ●Dual In-Line Package ●Compact 3 phase bridge ●High IFSM ●Applicable to mount on glass-epoxy substrate (VTA type) APPLICATION
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S10VT60
S10VTx
S10VT60
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S10VT80
Abstract: high Forward Voltage Diode
Text: SHINDENGEN 3 Phase Bridge Diode Diode Module OUTLINE DIMENSIONS S10VT80 Case : 2F: SVT Case Unit : mm 800V 10A FEATURES ●Dual In-Line Package ●Compact 3 phase bridge ●High IFSM ●Applicable to mount on glass-epoxy substrate (VTA type) APPLICATION
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S10VT80
S10VTx
S10VT80
high Forward Voltage Diode
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harting 09 06 000 6482
Abstract: 09 04 632 6921 b0948 3202-c 09 06 148 6901 09 03 232 2845 09 05 348 6921 harting 09 06 248 7836 harting 2921 iso 1207
Text: Directory chapter 02 - DIN Power to 6 A Types D, E, F, FM, 2F, F9, interface connectors I/U Page 02.10 Type D connectors . 02.11 Type E connectors . 02.15 DIN Power to 6 A Technical characteristics types D and E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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101005
Abstract: No abstract text available
Text: OPERATING CHARACTERISTICS DIALIGHT P/N LED CHIP MATERIAL EPOXY COLOR COLOR 597-51 I I-40 7F, -40 2F AIG aA s RED 597-5202-407F,-402F GaP ORANGE 597-531 I-407F, -40 2F GaP GREEN 597-541 I-407F, -40 2F GaP YELLOW WHITE DIFFUSED FORWARD VOLTAGE V If (mA) AT 25 °C A M B I E N T
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597-5202-407F
-402F
I-407F,
597-5202-407F,
101005
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Untitled
Abstract: No abstract text available
Text: Gds A-2F/FC DIN 41612 • complementary to type F Number of contacts max. 24 Interface connector I Identification Number of contacts Part No. Drawing Dimensions in mm Interface connector I for male crimp contacts Order contacts separately 0926 0243411 2F/FC
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24way
0D0Db27
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Untitled
Abstract: No abstract text available
Text: s e Mit“ a noi -intoa > FMB2907A MMPQ2907A E2 B2 C1 / MMPQ2907A C2 w pin#1 B1 E1 pin#1 B1 SC70-6 SuperSOT -6 M ark: .2F Mark: .2F SOIC-16 C1 PNP Multi-Chip General Purpose Amplifier This device is designed for use as a general purpose am plifier and switch requiring
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FFB2907A
FMBT2907A
FMB2907A
MMPQ2907A
SC70-6
SOIC-16
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Untitled
Abstract: No abstract text available
Text: 1 & KRL KRL STYLE C-l/4 P-l/2 C-l/2 (P-1A) C-1A C-1B (P-1C) C-1C C-1D (P-2) C-2 (P-2A) C-2A C-2B (P-2C) C-2C (P-2D) C-2D (P-2E) C-2E (P-2F) C-2F (P-3) C-3 C-4 (P-5) C-5 (P-6) C-6 C-7 C-7A C-10A P & C SERIES Wlrewound Power Resistors MIL-R-26 MIL-R39007 RW-70
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C-10A
MIL-R-26
MIL-R39007
RW-70
RW-79
RWR-71
RW-69
RW-74
RW-67
RWR-74
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Untitled
Abstract: No abstract text available
Text: CMBT2907 CMBT2907A »IL SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P silicon transistors Marking CMBT2907 = 2B CMBT2907A = 2F PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4
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CMBT2907
CMBT2907A
150mA;
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