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    2AAA 5555 Search Results

    2AAA 5555 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    MLC1555-551MXC Coilcraft Inc General Purpose Inductor, 0.55uH, 20%, 1 Element, SMD, ROHS COMPLIANT Visit Coilcraft Inc Buy
    MLC1555-551MXB Coilcraft Inc General Purpose Inductor, 0.55uH, 20%, 1 Element, SMD, ROHS COMPLIANT Visit Coilcraft Inc Buy
    MLC1555-551MLB Coilcraft Inc General Purpose Inductor, 0.55uH, 20%, 1 Element, Iron-Core, SMD, 5452, CHIP, 5452, ROHS COMPLIANT Visit Coilcraft Inc
    MLC1555-551MLC Coilcraft Inc General Purpose Inductor, 0.55uH, 20%, 1 Element, Iron-Core, SMD, 5452, CHIP, 5452, ROHS COMPLIANT Visit Coilcraft Inc
    MLC1555-551 Coilcraft Inc Power inductor, shielded, 20% tol, SMT, RoHS Visit Coilcraft Inc
    MLC1555-551ML Coilcraft Inc Power inductor, shielded, 20% tol, SMT, RoHS Visit Coilcraft Inc

    2AAA 5555 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    W49F102

    Abstract: No abstract text available
    Text: W49F102 64K x 16 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49F102 is a 1-megabit, 5-volt only CMOS flash memory organized as 64K × 16 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49F102 results in fast program/erase operations with


    Original     		PDF W49F102 W49F102 12-volt

    W49L102

    Abstract: A1A15
    Text: Preliminary W49L102 64K x 16 CMOS 3.3V FLASH MEMORY GENERAL DESCRIPTION The W49L102 is a 1-megabit, 3.3-volt only CMOS flash memory organized as 64K × 16 bits. The device can be programmed and erased in-system with a standard 3.3V power supply. A 12-volt VPP is


    Original     		PDF W49L102 W49L102 12-volt A1A15

    2AAA 5555

    Abstract: tcet 1010
    Text: W49L102 64K x 16 CMOS 3.3V FLASH MEMORY GENERAL DESCRIPTION The W49L102 is a 1-megabit, 3.3-volt only CMOS flash memory organized as 64K × 16 bits. The device can be programmed and erased in-system with a standard 3.3V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49L102 results in fast program/erase operations with


    Original     		PDF W49L102 12-volt 2AAA 5555 tcet 1010

    W29F102Q-55

    Abstract: W29F102 MM 5555
    Text: Preliminary W29F102 64K x 16 CMOS FLASH MEMORY GENERAL DESCRIPTION The W29F102 is a 1-megabit, 5-volt only CMOS flash memory organized as 64K × 16 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W29F102 results in fast program/erase operations


    Original     		PDF W29F102 W29F102 12-volt W29F102Q-55 MM 5555

    Untitled

    Abstract: No abstract text available
    Text: Preliminary W29F201 128K x 16 CMOS FLASH MEMORY GENERAL DESCRIPTION The W29F201 is a 2-megabit, 5-volt only CMOS flash memory organized as 128K × 16 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is


    Original     		PDF W29F201 W29F201 12-volt

    Untitled

    Abstract: No abstract text available
    Text: Preliminary W29N102C 64K x 16 CMOS 3.3V FLASH MEMORY GENERAL DESCRIPTION The W29N102C is a 1-megabit, 3.3-volt only CMOS flash memory organized as 64K × 16 bits. The device can be programmed and erased in-system with a standard 3.3V power supply. A 12-volt VPP is


    Original     		PDF W29N102C W29N102C 12-volt

    W49F201

    Abstract: No abstract text available
    Text: Preliminary W49F201 128K x 16 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49F201 is a 2-megabit, 5-volt only CMOS flash memory organized as 128K × 16 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is


    Original     		PDF W49F201 W49F201 12-volt

    w49f002up12b

    Abstract: W49F002U-12B W49F002U
    Text: W49F002U 256K x 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49F002U is a 2-megabit, 5-volt only CMOS flash memory organized as 256K × 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49F002U results in fast program/erase operations


    Original     		PDF W49F002U W49F002U 12-volt w49f002up12b W49F002U-12B

    W49L102

    Abstract: No abstract text available
    Text: Preliminary W49L102 64K x 16 CMOS 3.3V FLASH MEMORY GENERAL DESCRIPTION The W49L102 is a 1-megabit, 3.3-volt only CMOS flash memory organized as 64K × 16 bits. The device can be programmed and erased in-system with a standard 3.3V power supply. A 12-volt VPP is


    Original     		PDF W49L102 W49L102 12-volt

    W29F102

    Abstract: No abstract text available
    Text: W29F102 64K x 16 CMOS FLASH MEMORY GENERAL DESCRIPTION The W29F102 is a 1-megabit, 5-volt only CMOS flash memory organized as 64K × 16 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W29F102 results in fast program/erase operations


    Original     		PDF W29F102 W29F102 12-volt

    W49L201

    Abstract: XX30
    Text: Preliminary W49L201 128K x 16 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49L201 is a 2-megabit, 3.3-volt only CMOS flash memory organized as 128K × 16 bits. The device can be programmed and erased in-system with a standard 3.3V power supply. A 12-volt VPP is


    Original     		PDF W49L201 W49L201 12-volt XX30

    W29F020

    Abstract: W49F020 W49F020-70 W49F020-90
    Text: Preliminary W49F020 256K x 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49F020 is a 2-megabit, 5-volt only CMOS flash memory organized as 256K × 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not


    Original     		PDF W49F020 W49F020 12-volt W29F020 W49F020-70 W49F020-90

    Untitled

    Abstract: No abstract text available
    Text: W29F102 64K x 16 CMOS FLASH MEMORY GENERAL DESCRIPTION The W29F102 is a 1-megabit, 5-volt only CMOS flash memory organized as 64K × 16 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W29F102 results in fast program/erase operations with


    Original     		PDF W29F102 12-volt

    Untitled

    Abstract: No abstract text available
    Text: Preliminary W49F002U 256K x 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49F002U is a 2-megabit, 5-volt only CMOS flash memory organized as 256K × 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is


    Original     		PDF W49F002U 12-volt

    JEP-137

    Abstract: JESD68 SW4506 T3A-2 SST38VF166 JEP137 be3vil
    Text: 16 Megabit FlashBank Memory SST38UF166 / SST38VF166 FEATURES: Advance Information • Single Voltage Read and Write Operations – SST38UF166: 2.2-2.8V – SST38VF166: 2.7-3.6V • Separate Memory Banks for Code or Data – Simultaneous Read and Write Capability


    Original     		PDF SST38UF166 SST38VF166 SST38UF166: SST38VF166: 48-BALL JEP-137 JESD68 SW4506 T3A-2 SST38VF166 JEP137 be3vil

    winbond w49f002up12b

    Abstract: W49F002UP12B WINBOND W49F002U-12B W49F002U-12B Winbond W49F002U W49F002U
    Text: W49F002U 256K x 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49F002U is a 2-megabit, 5-volt only CMOS flash memory organized as 256K × 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49F002U results in fast program/erase operations


    Original     		PDF W49F002U W49F002U 12-volt winbond w49f002up12b W49F002UP12B WINBOND W49F002U-12B W49F002U-12B Winbond W49F002U

    W29F002

    Abstract: W49F002 W49F002B W49F002N W49F002U n70b a170 VS W29F W29F002B
    Text: Preliminary W49F002/B/U/N 256K x 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49F002/B/U/N is a 2-megabit, 5-volt only CMOS flash memory organized as 256K × 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt


    Original     		PDF W49F002/B/U/N W49F002/B/U/N 12-volt W29F002 W49F002 W49F002B W49F002N W49F002U n70b a170 VS W29F W29F002B

    AT49F1025

    Abstract: AT49F1025-12JI
    Text: Features • • • • • • • • • • Single Voltage Operation - 5V Read - 5V Reprogramming Fast Read Access Time - 70 ns Internal Program Control and Timer 8K word Boot Block With Lockout Fast Erase Cycle Time - 10 seconds Word By Word Programming - 10 µs/Word Typical


    Original     		PDF AT49F1025 AT49F1025-12JC AT49F1025-12VC AT49F1025-12JI AT49F1025-12VI 0000H AT49F1025-12JI

    W29F020

    Abstract: W49F020 W49F020-70 W49F020-90
    Text: Preliminary W49F020 256K x 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49F020 is a 2-megabit, 5-volt only CMOS flash memory organized as 256K × 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not


    Original     		PDF W49F020 W49F020 12-volt W29F020 W49F020-70 W49F020-90

    w29c042-90

    Abstract: W29C042P-90 W29C042T-90
    Text: W29C042 512K x 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W29C042 is a 4-megabit, 5-volt only CMOS page mode Flash Memory organized as 512K × 8 bits. The device can be written erased and programmed in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W29C042 results in fast write (erase/


    Original     		PDF W29C042 W29C042 12-volt Activ798 w29c042-90 W29C042P-90 W29C042T-90

    W49F102

    Abstract: No abstract text available
    Text: W49F102 64K x 16 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49F102 is a 1-megabit, 5-volt only CMOS flash memory organized as 64K × 16 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49F102 results in fast program/erase operations with


    Original     		PDF W49F102 W49F102 12-volt

    W49L201

    Abstract: No abstract text available
    Text: W49L201 128K x 16 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49L201 is a 2-megabit, 3.3-volt only CMOS flash memory organized as 128K × 16 bits. The device can be programmed and erased in-system with a standard 3.3V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49L201 results in fast program/erase operations with


    Original     		PDF W49L201 W49L201 12-volt

    AT49F2048

    Abstract: No abstract text available
    Text: Features • Single Voltage Operation • • • • • • • • • – 5V Read – 5V Reprogramming Fast Read Access Time - 70 ns Internal Erase/Program Control Sector Architecture – One 8K Words 16K bytes Boot Block with Programming Lockout – Two 8K Words (16K bytes) Parameter Blocks


    Original     		PDF AT49F2048 AT49F2048-12RC AT49F2048-12TC AT49F2048-12RI AT49F2048-12TI 00000H 01FFFH) 44-Lead, 48-Lead,

    AT49F516

    Abstract: No abstract text available
    Text: Features • Single Voltage Operation • • • • • • • • • – 5V Read – 5V Reprogramming Fast Read Access Time - 55 ns Internal Program Control and Timer 8K Word Boot Block With Lockout Fast Erase Cycle Time - 10 seconds Word-By-Word Programming - 10 µs/Word Typical


    Original     		PDF AT49F516 275ssumes 1089B 10/98/xM