MMBT3904 jiangsu
Abstract: MMBT3904 MMBT3906 MMBT3906 SOT-23
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3906 SOT–23 TRANSISTOR PNP FEATURES z Complementary Type The NPN Transistor MMBT3904 is Recommended z Epitaxial Planar Die Construction MARKING: 2A 1. BASE 2. EMITTER
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OT-23
MMBT3906
MMBT3904
MMBT3904 jiangsu
MMBT3906
MMBT3906 SOT-23
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3906 TRANSISTOR PNP SOT-23 FEATURES z As complementary type the NPN transistor MMBT3904 is recommended z Epitaxial planar die construction 1. BASE MARKING: 2A 2. EMITTER
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OT-23
MMBT3906
OT-23
MMBT3904
-10mA
-50mA
-100mA
-50mA,
-10mA
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Marking 2A
Abstract: 2a transistor sot 23 MMBT3906 SOT-23 SOT-23 2A 2A marking MMBT3906 transistor SOT23 2A MMBT3906 sot-23 2A transistor 2A MARKING SOT23
Text: MMBT3906 SOT-23 Transistor PNP 1. BASE SOT-23 2. EMITTER 3. COLLECTOR Features As complementary type, the NPN transistor MMBT3904 is Recommended Epitaxial planar die construction MARKING: 2A MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter
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MMBT3906
OT-23
OT-23
MMBT3904
-10mA
-50mA
-100mA
-50mA,
-10mA,
100MHz
Marking 2A
2a transistor sot 23
MMBT3906 SOT-23
SOT-23 2A
2A marking MMBT3906
transistor SOT23 2A
MMBT3906
sot-23 2A transistor
2A MARKING SOT23
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Untitled
Abstract: No abstract text available
Text: SOT-23 Plastic-Encapsulate Transistors MMBT3906LT1 TRANSISTOR PNP FEATURES •As complementary type, the NPN transistor MMBT3904LT1 is Recommended ·Epitaxial planar die construction MARKING: 2A MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter
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OT-23
MMBT3906LT1
MMBT3904LT1
-10mA
-50mA
100MHz
-10mA
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3906LT1 TRANSISTOR PNP FEATURES •As complementary type, the NPN transistor MMBT3904LT1 is Recommended ·Epitaxial planar die construction MARKING: 2A MAXIMUM RATINGS* TA=25℃ unless otherwise noted
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OT-23
MMBT3906LT1
MMBT3904LT1
-10mA
-50mA
100MHz
-10mA
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SMD TRANSISTOR MARKING 2A pnp
Abstract: MARKING SMD TRANSISTOR P CMBT3906 MARKING SMD PNP TRANSISTOR 2a
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBT3906 SILICON EPITAXIAL TRANSISTOR P–N–P transistor Marking CMBT3906 = 2A PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE
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ISO/TS16949
OT-23
CMBT3906
C-120
SMD TRANSISTOR MARKING 2A pnp
MARKING SMD TRANSISTOR P
CMBT3906
MARKING SMD PNP TRANSISTOR 2a
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RF transistor marking IN SOT-89
Abstract: RF transistor marking H SOT-89 RF transistor marking "SOT-89" RF transistor Type code SOT-89
Text: TSB1424 Low Vcesat PNP Transistor SOT-89 SOT-23 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCBO -20V BVCEO -20V IC -3A VCE SAT Features ● ● Ordering Information Low VCE(SAT) -0.2 @ IC / IB = -2A / -100mA (Typ.) Complementary part with TSD2150
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TSB1424
OT-89
OT-23
-100mA
TSD2150
TSB1424CY
TSB1424CX
RF transistor marking IN SOT-89
RF transistor marking H SOT-89
RF transistor marking "SOT-89"
RF transistor Type code SOT-89
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SMD TRANSISTOR MARKING 2A pnp
Abstract: CMBT3906
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT3906 SILICON EPITAXIAL TRANSISTOR P–N–P transistor Marking CMBT3906 = 2A PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration
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OT-23
CMBT3906
C-120
SMD TRANSISTOR MARKING 2A pnp
CMBT3906
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Untitled
Abstract: No abstract text available
Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package CMBT3906 SILICON EPITAXIAL TRANSISTOR P–N–P transistor Marking CMBT3906 = 2A
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OT-23
CMBT3906
C-120
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MMBT8550
Abstract: No abstract text available
Text: MMBT8550 2A PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups C and D according to its DC current gain. SOT-23 Plastic Package
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MMBT8550
OT-23
MMBT8550
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MMBT8050
Abstract: MMBT8050 BR mmbt8050 sot-23
Text: MMBT8050 2A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups C and D according to its DC current gain. SOT-23 Plastic Package
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MMBT8050
OT-23
MMBT8050
MMBT8050 BR
mmbt8050 sot-23
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KST3906
Abstract: WH*s
Text: KST3906 PNP Epitaxial Silicon Transistor Features • General Purpose Transistor 3 Marking 2A 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol VCBO VCEO VEBO IC PC TSTG Ta = 25°C unless otherwise noted Parameter Collector-Base Voltage
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KST3906
OT-23
KST3906
WH*s
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Untitled
Abstract: No abstract text available
Text: KST3906 PNP Epitaxial Silicon Transistor Features • General Purpose Transistor 3 Marking 2A 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol VCBO VCEO VEBO IC PC TSTG Ta = 25°C unless otherwise noted Parameter Collector-Base Voltage
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KST3906
OT-23
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Untitled
Abstract: No abstract text available
Text: ; S v m Se m i ; SOT-23 5YM5EMI SEMICONDUCTOR MMBT2907LT1 Plastic Encapsulate Transistors transistor SOT — 23 c pnp 1. BASE 2. EM IH E R 3. COLLECTOR FEATURES Power dissipation PCM : 0.3 W Tamb=25 °C) 2A Collector current Icm : -0.6 1.3 A Collector base voltage
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OCR Scan
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OT-23
MMBT2907LT1
100MHz
MMBT2907
-50mA
OT-23
950TPY
037TPY
550REF
022REF
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MARKING 2A
Abstract: MMBT3906 MMBT3904
Text: MMBT3906 Pb RoHS 0.3 Watts PNP Plastic-Encapsulate Transistors COMPLIANCE SOT-23 Features As complementary type, the NPN transistor MMBT3904 is recommended Epitaxial planar die construction Marking: 2A Dimensions in inches and millimeters Maximum Ratings
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MMBT3906
OT-23
MMBT3904
-10uA,
-50mA,
-10mA
100MHz
-10mA
MARKING 2A
MMBT3906
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FSB560
Abstract: FSB560A
Text: FSB560/FSB560A July 1998 FSB560 / FSB560A C E B TM SuperSOT -3 SOT-23 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. Absolute Maximum Ratings* Symbol
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FSB560/FSB560A
FSB560
FSB560A
OT-23)
FSB560A
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT3906 SILICON EPITAXIAL TRANSISTOR P–N–P transisto r Marking CMBT3906 = 2A PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration
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OT-23
CMBT3906
C-120
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Untitled
Abstract: No abstract text available
Text: SEM ICONDUCTO R tm July 1998 FMMT560 / FMMT560A B SuperS0T -3 SOT-23 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. Absolute Maximum Ratings* Symbol
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OCR Scan
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FMMT560
FMMT560A
OT-23)
FMMT560/FMMT560A
FMMT560
100MHz
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PDF
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Untitled
Abstract: No abstract text available
Text: FSB660/FSB660A July 1998 FSB660 / FSB660A C E B TM SuperSOT -3 SOT-23 PNP Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. Absolute Maximum Ratings* Symbol
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FSB660/FSB660A
FSB660
FSB660A
OT-23)
FSB660/FSB660A
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TRANSISTOR W25
Abstract: FMMT549
Text: FMMT549 FMMT549 C E B TM SuperSOT -3 SOT-23 PNP Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. Absolute Maximum Ratings* TA = 25°C unless otherwise noted
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FMMT549
OT-23)
TRANSISTOR W25
FMMT549
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Untitled
Abstract: No abstract text available
Text: FSB660/FSB660A FSB660 / FSB660A C E B TM SuperSOT -3 SOT-23 PNP Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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FSB660/FSB660A
FSB660
FSB660A
OT-23)
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MMBT3906 UTC
Abstract: No abstract text available
Text: UTC MMBT3906 PNP EPITAXIAL PLANAR TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES *Collector-Emitter Voltage: VCEO=40V *Collector Dissipation: Pc max =350mW *Complementary to MMBT3904 2 1 MARKING 2A 3 SOT-23 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
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MMBT3906
350mW
MMBT3904
OT-23
QW-R206-013
MMBT3906 UTC
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FSB560
Abstract: FSB560A
Text: FSB560/FSB560A FSB560 / FSB560A C E B TM SuperSOT -3 SOT-23 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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FSB560/FSB560A
FSB560
FSB560A
OT-23)
FSB560A
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PDF
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Untitled
Abstract: No abstract text available
Text: UTC MMBT3906 PNP EPITAXIAL PLANAR TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES *Collector-Emitter Voltage: VCEO=40V *Collector Dissipation: Pc max =350mW *Complementary to MMBT3904 2 1 MARKING 3 2A SOT-23 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
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MMBT3906
350mW
MMBT3904
OT-23
QW-R206-013
-10mA
-50mA
100MHz
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PDF
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