2AX sot-23
Abstract: marking 2AX sot-23 MARKING 2Ax 2A MARKING SOT23 MARKING 2A MARK 2A marking 2A sot23
Text: SEMICONDUCTOR Z02W2.0V MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking 2AX No. 1 Item Marking Device Mark 2A Z02W2.0V Voltage Grade X X,Z * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method
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Z02W2
OT-23
2AX sot-23
marking 2AX sot-23
MARKING 2Ax
2A MARKING SOT23
MARKING 2A
MARK 2A
marking 2A sot23
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Untitled
Abstract: No abstract text available
Text: SOT-23 Plastic-Encapsulate Transistors MMBT3906LT1 TRANSISTOR PNP FEATURES •As complementary type, the NPN transistor MMBT3904LT1 is Recommended ·Epitaxial planar die construction MARKING: 2A MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter
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OT-23
MMBT3906LT1
MMBT3904LT1
-10mA
-50mA
100MHz
-10mA
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LMBT3906LT1G
Abstract: LMBT3906LT1 1N916
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LMBT3906LT1G • We declare that the material of product compliance with RoHS requirements. 3 ORDERING INFORMATION Device 1 Marking 2 Shipping LMBT3906LT1G 2A 3000/Tape & Reel LMBT3906LT3G
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LMBT3906LT1G
3000/Tape
LMBT3906LT3G
10000/Tape
236AB)
OT-23
LMBT3906LT1G
LMBT3906LT1
1N916
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MMBT3904 jiangsu
Abstract: MMBT3904 MMBT3906 MMBT3906 SOT-23
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3906 SOT–23 TRANSISTOR PNP FEATURES z Complementary Type The NPN Transistor MMBT3904 is Recommended z Epitaxial Planar Die Construction MARKING: 2A 1. BASE 2. EMITTER
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OT-23
MMBT3906
MMBT3904
MMBT3904 jiangsu
MMBT3906
MMBT3906 SOT-23
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MARKING 2A
Abstract: MMBT3906 MMBT3904
Text: MMBT3906 Pb RoHS 0.3 Watts PNP Plastic-Encapsulate Transistors COMPLIANCE SOT-23 Features As complementary type, the NPN transistor MMBT3904 is recommended Epitaxial planar die construction Marking: 2A Dimensions in inches and millimeters Maximum Ratings
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MMBT3906
OT-23
MMBT3904
-10uA,
-50mA,
-10mA
100MHz
-10mA
MARKING 2A
MMBT3906
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3906 TRANSISTOR PNP SOT-23 FEATURES z As complementary type the NPN transistor MMBT3904 is recommended z Epitaxial planar die construction 1. BASE MARKING: 2A 2. EMITTER
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OT-23
MMBT3906
OT-23
MMBT3904
-10mA
-50mA
-100mA
-50mA,
-10mA
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3906LT1 TRANSISTOR PNP FEATURES •As complementary type, the NPN transistor MMBT3904LT1 is Recommended ·Epitaxial planar die construction MARKING: 2A MAXIMUM RATINGS* TA=25℃ unless otherwise noted
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OT-23
MMBT3906LT1
MMBT3904LT1
-10mA
-50mA
100MHz
-10mA
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LMBT3906TT1 3 FEATURE ƽSimplifies Circuit Design. ƽThis is a Pb-Free Device. 1 2 ORDERING INFORMATION Device LMBT3906TT1 Marking Shipping 2A 3000/Tape&Reel SC-89 MAXIMUM RATINGS Symbol Value
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LMBT3906TT1
3000/Tape
SC-89
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SMD TRANSISTOR MARKING 2A pnp
Abstract: MARKING SMD TRANSISTOR P CMBT3906 MARKING SMD PNP TRANSISTOR 2a
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBT3906 SILICON EPITAXIAL TRANSISTOR P–N–P transistor Marking CMBT3906 = 2A PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE
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ISO/TS16949
OT-23
CMBT3906
C-120
SMD TRANSISTOR MARKING 2A pnp
MARKING SMD TRANSISTOR P
CMBT3906
MARKING SMD PNP TRANSISTOR 2a
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LMBT3906LT1G • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 3 ORDERING INFORMATION Device 1 Marking 2 Shipping LMBT3906LT1G 2A 3000/Tape & Reel LMBT3906LT3G
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LMBT3906LT1G
3000/Tape
LMBT3906LT3G
10000/Tape
236AB)
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Marking 2A
Abstract: 2a transistor sot 23 MMBT3906 SOT-23 SOT-23 2A 2A marking MMBT3906 transistor SOT23 2A MMBT3906 sot-23 2A transistor 2A MARKING SOT23
Text: MMBT3906 SOT-23 Transistor PNP 1. BASE SOT-23 2. EMITTER 3. COLLECTOR Features As complementary type, the NPN transistor MMBT3904 is Recommended Epitaxial planar die construction MARKING: 2A MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter
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MMBT3906
OT-23
OT-23
MMBT3904
-10mA
-50mA
-100mA
-50mA,
-10mA,
100MHz
Marking 2A
2a transistor sot 23
MMBT3906 SOT-23
SOT-23 2A
2A marking MMBT3906
transistor SOT23 2A
MMBT3906
sot-23 2A transistor
2A MARKING SOT23
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SMD TRANSISTOR MARKING 2A pnp
Abstract: CMBT3906
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT3906 SILICON EPITAXIAL TRANSISTOR P–N–P transistor Marking CMBT3906 = 2A PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration
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OT-23
CMBT3906
C-120
SMD TRANSISTOR MARKING 2A pnp
CMBT3906
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT3906 SILICON EPITAXIAL TRANSISTOR P–N–P transisto r Marking CMBT3906 = 2A PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration
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OT-23
CMBT3906
C-120
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Untitled
Abstract: No abstract text available
Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package CMBT3906 SILICON EPITAXIAL TRANSISTOR P–N–P transistor Marking CMBT3906 = 2A
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OT-23
CMBT3906
C-120
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Untitled
Abstract: No abstract text available
Text: KST3906 PNP Epitaxial Silicon Transistor Features • General Purpose Transistor 3 Marking 2A 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol VCBO VCEO VEBO IC PC TSTG Ta = 25°C unless otherwise noted Parameter Collector-Base Voltage
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KST3906
OT-23
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MMBT3906 UTC
Abstract: No abstract text available
Text: UTC MMBT3906 PNP EPITAXIAL PLANAR TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES *Collector-Emitter Voltage: VCEO=40V *Collector Dissipation: Pc max =350mW *Complementary to MMBT3904 2 1 MARKING 2A 3 SOT-23 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
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MMBT3906
350mW
MMBT3904
OT-23
QW-R206-013
MMBT3906 UTC
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Untitled
Abstract: No abstract text available
Text: UTC MMBT3906 PNP EPITAXIAL PLANAR TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES *Collector-Emitter Voltage: VCEO=40V *Collector Dissipation: Pc max =350mW *Complementary to MMBT3904 2 1 MARKING 3 2A SOT-23 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
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MMBT3906
350mW
MMBT3904
OT-23
QW-R206-013
-10mA
-50mA
100MHz
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FMMT549
Abstract: SuperSOT-23 Fairchild Semiconductor - Process
Text: FMMT549 PNP Low Saturation Transistor Features • ThIs device is designed with high current gain and low saturation voltage with collector currents up to 2A continuous. • Sourced from process PB. 3 2 SuperSOT-23 1 Marking : 549 1. Base 2. Emitter 3. Collector
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FMMT549
SuperSOT-23
FMMT549
SuperSOT-23
Fairchild Semiconductor - Process
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Untitled
Abstract: No abstract text available
Text: FMMT549 PNP Low Saturation Transistor Features • ThIs device is designed with high current gain and low saturation voltage with collector currents up to 2A continuous. • Sourced from process PB. 3 2 SuperSOT-23 1 Marking : 549 1. Base 2. Emitter 3. Collector
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FMMT549
SuperSOT-23
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marking code vishay SILICONIX sot-23
Abstract: No abstract text available
Text: Si2302ADS Vishay Siliconix N-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V 20 rDS(on) (Ω) ID (A) 0.060 @ VGS = 4.5 V 2.4 0.115 @ VGS = 2.5 V 2.0 TO-236 (SOT-23) G 1 S 2 3 D Ordering Information: Si2302ADS-T1 Top View Si2302DS (2A)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Si2302ADS
O-236
OT-23)
Si2302ADS-T1
Si2302DS
08-Apr-05
marking code vishay SILICONIX sot-23
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Si2302DS 2A
Abstract: No abstract text available
Text: Si2302ADS Vishay Siliconix N-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V 20 rDS(on) (W) ID (A) 0.085 @ VGS = 4.5 V 2.4 0.115 @ VGS = 2.5 V 2.0 TO-236 (SOT-23) G 1 S 2 3 D Ordering Information: Si2302ADS-T1 Top View Si2302DS (2A)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Si2302ADS
O-236
OT-23)
Si2302ADS-T1
Si2302DS
S-32044--Rev.
13-Oct-03
Si2302DS 2A
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si2302ds
Abstract: Si2302ADS Si2302DS 2A
Text: Si2302ADS New Product Vishay Siliconix N-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V 20 rDS(on) (W) ID (A) 0.085 @ VGS = 4.5 V 2.4 0.115 @ VGS = 2.5 V 2.0 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2302DS (2A)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Si2302ADS
O-236
OT-23)
Si2302DS
S-20617--Rev.
29-Apr-02
Si2302DS 2A
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Si2302ADS-T1
Abstract: Si2302ADS Si2302DS
Text: Si2302ADS Vishay Siliconix N-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V 20 rDS(on) (Ω) ID (A) 0.060 @ VGS = 4.5 V 2.4 0.115 @ VGS = 2.5 V 2.0 TO-236 (SOT-23) G 1 S 2 3 D Ordering Information: Si2302ADS-T1 Top View Si2302DS (2A)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Si2302ADS
O-236
OT-23)
Si2302ADS-T1
Si2302DS
S-41772--Rev.
20-Sep-04
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Untitled
Abstract: No abstract text available
Text: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# TM Micro Commercial Components MMBT3906 Features • Capable of 300mWatts of Power Dissipation x Surface Mount SOT-23 Package x Marking:2A
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MMBT3906
300mWatts
OT-23
OT-23
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