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    2A 80V COMPLEMENTARY TRANSISTOR Search Results

    2A 80V COMPLEMENTARY TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2A 80V COMPLEMENTARY TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SCR574D

    Abstract: No abstract text available
    Text: 2SAR574D Datasheet PNP -2.0A -80V Middle Power Transistor l Outline Parameter VCEO Value IC -2A CPT -80V 2SAR574D l Features 1 Suitable for Middle Power Driver. 2) Complementary NPN Types : 2SCR574D.


    Original     		PDF 2SAR574D 2SCR574D. -1A/-50mA) 2SCR574D

    2SCR574D

    Abstract: No abstract text available
    Text: 2SCR574D Datasheet NPN 2.0A 80V Middle Power Transistor l Outline Parameter VCEO Value IC 2A CPT 80V 2SCR574D l Features 1 Suitable for Middle Power Driver. 2) Complementary PNP Types : 2SAR574D.


    Original     		PDF 2SCR574D 2SAR574D. A/50mA) 2SCR574D

    2SCR574D

    Abstract: No abstract text available
    Text: 2SCR574D Datasheet NPN 2.0A 80V Middle Power Transistor l Outline Parameter VCEO Value 80V IC 2A CPT 2SCR574D l Features 1 Suitable for Middle Power Driver. 2) Complementary PNP Types : 2SAR574D.


    Original     		PDF 2SCR574D 2SAR574D. A/50mA) 2SCR574D

    Untitled

    Abstract: No abstract text available
    Text: 2SCR574D A07 Datasheet NPN 2.0A 80V Middle Power Transistor l Outline Parameter VCEO Value 80V IC 2A CPT 2SCR574D A07 l Features 1 Suitable for Middle Power Driver. 2) Complementary PNP Types : 2SAR574D.


    Original     		PDF 2SCR574D 2SAR574D. A/50mA)

    2SCR574D

    Abstract: No abstract text available
    Text: 2SCR574D A07 Datasheet NPN 2.0A 80V Middle Power Transistor l Outline Parameter VCEO Value IC 2A CPT 80V 2SCR574D A07 l Features 1 Suitable for Middle Power Driver. 2) Complementary PNP Types : 2SAR574D.


    Original     		PDF 2SCR574D 2SAR574D. A/50mA)

    Untitled

    Abstract: No abstract text available
    Text: TSD2150A Low Vcesat NPN Transistor SOT-89 PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCBO 80V BVCEO 50V IC 3A VCE SAT Features ● ● 0.5V @ IC / IB = 2A / 200mA Ordering Information Low VCE(SAT) 0.1 @ IC / IB = 1A / 50mA (Typ.) Complementary part with TSB1424A


    Original     		PDF TSD2150A OT-89 200mA TSB1424A TSD2150ACY

    nte275

    Abstract: SILICON COMPLEMENTARY transistors darlington
    Text: NTE274 NPN & NTE275 (PNP) Silicon Complementary Transistors Darlington Power Amplifier, Switch Description: The NTE274 (NPN) and NTE275 (PNP) are silicon complementary Darlington transistors in a TO66 type case designed for general purpose amplifier, low–frequency switching and hammer driver


    Original     		PDF NTE274 NTE275 nte275 SILICON COMPLEMENTARY transistors darlington

    PNP Monolithic Transistor Pair

    Abstract: NTE253MCP DSA0013913 SILICON COMPLEMENTARY transistors darlington
    Text: NTE253 NPN & NTE254 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE253 (NPN) and NTE254 (PNP) are silicon complementary Darlington transistors in a TO126 type case designed for general–purpose amplifier and low–speed switching applications.


    Original     		PDF NTE253 NTE254 NTE253MCP PNP Monolithic Transistor Pair DSA0013913 SILICON COMPLEMENTARY transistors darlington

    PNP 2A DPAK

    Abstract: MJD112 MJD117 MJD117 Darlington On semiconductor date Code dpak npn 2A DPAK NPN VCBO 80V
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS MJD112 NPN MJD117 PNP DPAK TO-252 Plastic Package Designed for General Purpose Power and Switching Applications


    Original     		PDF MJD112 MJD117 O-252) C-120 Rev220904E PNP 2A DPAK MJD117 Darlington On semiconductor date Code dpak npn 2A DPAK NPN VCBO 80V

    ic 10w power amplifier

    Abstract: npn general purpose high voltage amplifier NTE189 NTE188
    Text: NTE188 NPN & NTE189 (PNP) Silicon Complementary Transistors High Voltage Amplifier & Driver Description: The NTE188 (NPN) and NTE189 (PNP) are complementary silicon transistors in a TO202N type package designed for general purpose, high voltage amplifier and driver applications.


    Original     		PDF NTE188 NTE189 O202N 100MHz, 100MHz ic 10w power amplifier npn general purpose high voltage amplifier NTE189 NTE188

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS MJD112 NPN MJD117 PNP DPAK TO-252 Plastic Package Designed for General Purpose Power and Switching Applications


    Original     		PDF MJD112 MJD117 O-252) C-120 Rev220904E

    Untitled

    Abstract: No abstract text available
    Text: NTE188 NPN & NTE189 (PNP) Silicon Complementary Transistors High Voltage Amplifier & Driver Description: The NTE188 (NPN) and NTE189 (PNP) are complementary silicon transistors in a TO202N type package designed for general purpose, high voltage amplifier and driver applications.


    Original     		PDF NTE188 NTE189 O202N 100MHz

    NTE188

    Abstract: NTE189
    Text: NTE188 NPN & NTE189 (PNP) Silicon Complementary Transistors High Voltage Amplifier & Driver Description: The NTE188 (NPN) and NTE189 (PNP) are complementary silicon transistors in a TO202N type package designed for general purpose, high voltage amplifier and driver applications.


    Original     		PDF NTE188 NTE189 O202N 100MHz, 100MHz NTE188 NTE189

    NTE188

    Abstract: NTE189
    Text: NTE188 NPN & NTE189 (PNP) Silicon Complementary Transistors High Voltage Amplifier & Driver Description: The NTE188 (NPN) and NTE189 (PNP) are complementary silicon transistors in a TO202N type package designed for general purpose, high voltage amplifier and driver applications.


    Original     		PDF NTE188 NTE189 O202N 100MHz, 100MHz NTE188 NTE189

    NTE388

    Abstract: NPN 250W NTE68 NTE68MCP
    Text: NTE388 NPN & NTE68 (PNP) Silicon Complementary Transistors General Purpose High Power Audio, Disk Head Positioner for Linear Applications Description: The NTE388 (NPN) and NTE68 (PNP) are complementary silicon power transistors in a TO3 type package designed for high power audio, disk head positioners, and other linear applications.


    Original     		PDF NTE388 NTE68 NTE388 NPN 250W NTE68 NTE68MCP

    NTE378

    Abstract: NTE377
    Text: NTE377 NPN & NTE378 (PNP) Silicon Complementary Transistors Power Amp Driver, Output, Switch Description: The NTE377 (NPN) and NTE378 (PNP) are silicon complementary transistors in a TO220 type package designed for general purpose power amplification and switching such as output or driver stages


    Original     		PDF NTE377 NTE378 500mA, 20MHz NTE378 NTE377

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors MJD117 TRANSISTOR PNP TO – 251 FEATURES z High DC Current Gain z Low Collector-Emitter Saturation Voltage z Complementary to MJD112 1. BASE 2. COLLECTOR 3. EMITTER


    Original     		PDF O-251 MJD117 MJD112 -40mA

    NPN Transistor VCEO 80V 100V

    Abstract: NTE24 NTE25
    Text: NTE24 NPN & NTE25 (PNP) Silicon Complementary Transistors General Purpose Amplifier, Switch Description: The NTE24 (NPN) and NTE25 (PNP) are complementary silicon transistors in a TO237 type package designed for general purpose medium power amplifier and switching circuits that require collector currents to 1A.


    Original     		PDF NTE24 NTE25 500mA, 1000mA, 100mA 1000mA 200mA, 100MHz NPN Transistor VCEO 80V 100V NTE24 NTE25

    TIP31

    Abstract: TIP31A TIP31B TIP32 TIP32B
    Text: TIP31,2 CRO SERIES COMPLEMENTARY SILICON POWER TRANSISTORS TIP31 series NPN & TIP32 series (PNP) are complementary silicon power transistors designed for power amplifiers and switching applications. TPifdSISIDR Nil. MMtlrCri! ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage


    OCR Scan     		PDF TIP31 TIP32 TIP31/2TIP31A/2A TIP31B/2B TIP31C/2C TIP31BJIP32B TIP31CJIP32C 375mA 300/iS, Jan-96 TIP31A TIP31B TIP32B

    Untitled

    Abstract: No abstract text available
    Text: TIP31,2 CRO SERIES COMPLEMENTARY SILICON POWER TRANSISTORS TIP31 series NPN & TIP32 series (PNP) are complementary silicon power transistors designed for power amplifiers and switching applications. TPifdSISIDR Nil. MMtlrCri! ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage


    OCR Scan     		PDF TIP31 TIP32 TIP31/2 TIP31A/2A TIP31B/2B TIP31C/2C 375mA 300/iS, Jan-96

    Untitled

    Abstract: No abstract text available
    Text: 0043592 A P I E LE CTRONICS INC _. _13A0Q67 3 VI ELECTRONICS INC 13 DE J □□43Scia □OOODb? 2 A P I U W NPN and PNP Complementary Silicon Planar Power Transistors continued . A bPRA ,UE ClECTR C S'JQS OlARY 2A TO-5 TO-66 BV ceo NPN


    OCR Scan     		PDF 13A0Q67 2N3766 2N3740 PG1050 PG2050 PG1001 PG2001 2N3767 2N3741 PG1051

    K*D1691

    Abstract: 2A 80v complementary transistor ts 4142 AGQF KSB1151 KSD1691 KSD986
    Text: IME D | 7*^4145 0ÛQ7L5S *1 | NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KSD986 SAMS UN G SEMICONDUCTOR INC T-33-29 V - #- LOW FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE ABSOLUTE MAXIMUM RATINGS Ta=25°C Rating Unit 150 80 8.0 ±1.5 ± 3 .0


    OCR Scan     		PDF KSD986 T-33-29 O-126 300fjs, KSD1691 T-33-Cfl K*D1691 2A 80v complementary transistor ts 4142 AGQF KSB1151 KSD986

    Untitled

    Abstract: No abstract text available
    Text: FZT951 FZT953 SOT223 PNP SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS ISSUE 2 - OCTOBER 1995 FEATURES * * 5 A m ps continuous c u rre n t, up to 15 Am ps peak current Very lo w saturation voltages * Excellent gain characteristics specified up to 10 Am ps


    OCR Scan     		PDF FZT951 FZT953 OT223 FZT951 FZT851 FZT853

    DARLINGTON 3A 100V npn

    Abstract: complementary npn-pnp power transistors 2N3766 PT7015 complementary npn-pnp PG2051 2N3767 TO66 PLASTIC package 7014 pnp and npn
    Text: 0043592 A P I A P I ELECTRONI CS !► ELECTRONICS INC 13 A00 6 7 I NC 13 A iiPRÄ ,U £ ELECTH C S'JQS DIARY DE 3 -0/_. - J □ D Ll 3 5 cia QDODDt,? E f~ - NPN and PNP Complementary Silicon Planar Power Transistors continued 2A B V ceo TO-66 TO-5 TO-46


    OCR Scan     		PDF D435CIB 2N3766 2N3740 PG1050 PG2050 PG1001 PG2001 2N3767 2N3741 PG1051 DARLINGTON 3A 100V npn complementary npn-pnp power transistors PT7015 complementary npn-pnp PG2051 TO66 PLASTIC package 7014 pnp and npn