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    Abstract: 2sk82 2SK829 T12N
    Text: N E C N E C ELECTRONICS 98D INC ELE CTR ONICS INC ~Tñ MOS 19005 D 7" — D Ë f| 1 ^ 5 7 5 2 5 FIELD GDnDDS EFFECT 4 TRAXS ISTC." ELECTRON DEVICE 2SK82S F A S T S W I T C H I N G N - C H A N N E L S I L I C O N ' POW ER MOS F E T PACKAGE DIMENSIONS Features


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    PDF bMa75E5 2SK829 120ll T-39-13 Vos-10 J22686 for1a 2sk82 2SK829 T12N