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    2SK576

    Abstract: No abstract text available
    Text: SONY CO RP /C OM PONEN T PRODS 77 DE § 6 3 5 5 3 6 3 D C m o g ^ h n u o œ . 2SK576 SONY GaAs N-channel MES FET Description: The 2SK576 is a low noise N-channel GaAs FET having a 0.5 micron gate length designed for amplifiers up to the Kuband. Plastic mold packaging has been adopted to reduce cost.


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    PDF 2SK576 12GHz