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    Panasonic Electronic Components 2SK353900L

    MOSFET N-CH 50V 100MA SMINI3-G1
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    Panasonic Electronic Components 2SK3539G0L

    MOSFET N-CH 50V 100MA SMINI3-F2
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    2SK3539 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK3539 Panasonic TRANS JFET N-CH 50V 0.001MA SMini3-G1 Original PDF
    2SK3539 Panasonic Silicon N-channel MOSFET Original PDF
    2SK3539 Panasonic FETs, IPD, IGBTs, GaAs MMICs Original PDF
    2SK353900L Panasonic FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 50V .1A S-MINI-3P Original PDF
    2SK3539G0L Panasonic FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 50V .1A S-MINI-3P Original PDF

    2SK3539 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SJ0672

    Abstract: 2SK3539 UP04979
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04979 Silicon N-channel MOSFET (Tr1) Silicon P-channel MOSFET (Tr2) 0.20+0.05 –0.02 (0.30) 4 1.20±0.05 For switching Display at No.1 lead • 2SJ0672 + 2SK3539 Parameter


    Original     		PDF 2002/95/EC) UP04979 2SJ0672 2SK3539 OD-723 -20lues, 2SJ0672 2SK3539 UP04979

    ON4030

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04979 Silicon N-channel MOSFET (Tr1) Silicon P-channel MOSFET (Tr2) 0.20+0.05 –0.02 (0.30) 4 1.20±0.05 For switching Display at No.1 lead • 2SJ0672 + 2SK3539 Parameter


    Original     		PDF 2002/95/EC) UP04979 2SJ0672 2SK3539 ON4030

    2SK3539G

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK3539G Silicon N-channel MOSFET For switching • Package ■ Features • Code SMini3-F2 • Marking Symbol: 5F • Pin Name 1: Gate 2: Source 3: Drain Th an W is k y


    Original     		PDF 2002/95/EC) 2SK3539G 2SK3539G

    2SJ0672

    Abstract: 2SK3539 UP04979
    Text: Composite Transistors UP04979 Silicon N-channel MOSFET Tr1 Silicon P-channel MOSFET (Tr2) 0.20+0.05 –0.02 (0.30) 4 1.20±0.05 For switching Display at No.1 lead • 2SJ0672 + 2SK3539 Parameter Tr1 Symbol Rating Unit VDSS 50 V Marking Symbol: 4T Gate-source voltage


    Original     		PDF UP04979 2SJ0672 2SK3539 OD-723 2SJ0672 2SK3539 UP04979

    2SK3539

    Abstract: No abstract text available
    Text: Silicon MOSFETs Small Signal 2SK3539 Silicon N-channel MOSFET (0.425) Unit: mm For switching 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5˚ 1.25±0.10 0.9+0.2 –0.1 • High-speed switching • Wide frequency band • Gate protection diode built-in 0.9±0.1


    Original     		PDF 2SK3539 2SK3539

    2SJ0672

    Abstract: 2SK3539 UP04979
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04979 Silicon N-channel MOSFET (Tr1) Silicon P-channel MOSFET (Tr2) 0.20+0.05 –0.02 (0.30) 4 M Di ain sc te on na tin nc ue e/ d 1.20±0.05 For switching • 2SJ0672 + 2SK3539


    Original     		PDF 2002/95/EC) UP04979 2SJ0672 2SK3539 OD-723 2SJ0672 2SK3539 UP04979

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04979 Silicon N-channel MOSFET (Tr1) Silicon P-channel MOSFET (Tr2) 0.20+0.05 –0.02 (0.30) 4 • Features 1 • 2SJ0672 + 2SK3539 ■ Absolute Maximum Ratings Ta = 25°C


    Original     		PDF 2002/95/EC) UP04979 2SJ0672 2SK3539 OD-723

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK3539G Silicon N-channel MOSFET For switching • Package ■ Features • High-speed switching • Wide frequency band • Gate protection diode built-in ■ Absolute Maximum Ratings Ta = 25°C


    Original     		PDF 2002/95/EC) 2SK3539G

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK3539 Silicon N-channel MOSFET (0.425) Unit: mm For switching 0.3+0.1 –0.0 0.15+0.10 –0.05 5˚ 2 0.2±0.1 1 2.1±0.1 M Di ain sc te on na tin nc ue e/ d • High-speed switching


    Original     		PDF 2002/95/EC) 2SK3539

    2SK3539

    Abstract: No abstract text available
    Text: Silicon MOSFETs Small Signal 2SK3539 Silicon N-channel MOSFET (0.425) Unit: mm For switching 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5˚ 1.25±0.10 0.9+0.2 –0.1 • High-speed switching • Wide frequency band • Gate-peotection diode built-in 0.9±0.1


    Original     		PDF 2SK3539 2SK3539

    2SK3539

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK3539 Silicon N-channel MOSFET (0.425) Unit: mm For switching 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5˚ 1.25±0.10 0.9+0.2 –0.1 • High-speed switching • Wide frequency band


    Original     		PDF 2002/95/EC) 2SK3539 2SK3539

    2SJ0672

    Abstract: 2SK3539 UP04979
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04979 Silicon N-channel MOSFET (Tr1) Silicon P-channel MOSFET (Tr2) 0.20+0.05 –0.02 (0.30) 4 M Di ain sc te on na tin nc ue e/ d 1.20±0.05 For switching • 2SJ0672 + 2SK3539


    Original     		PDF 2002/95/EC) UP04979 2SJ0672 2SK3539 OD-723 2SJ0672 2SK3539 UP04979

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK3539G Silicon N-channel MOSFET For switching • Package • Code SMini3-F2 • Marking Symbol: 5F • Pin Name 1: Gate 2: Source 3: Drain M Di ain sc te on na


    Original     		PDF 2002/95/EC) 2SK3539G

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK3539 Silicon N-channel MOSFET (0.425) Unit: mm For switching 0.3+0.1 –0.0 0.15+0.10 –0.05 3 M Di ain sc te on na tin nc ue e/ d 5˚ • High-speed switching


    Original     		PDF 2002/95/EC) 2SK3539 SC-70

    2SK3539G

    Abstract: YP diode code marking
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK3539G Silicon N-channel MOSFET M Di ain sc te on na tin nc ue e/ d For switching • Package • High-speed switching • Wide frequency band • Gate protection diode built-in


    Original     		PDF 2002/95/EC) 2SK3539G 2SK3539G YP diode code marking

    2SK3539

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK3539 Silicon N-channel MOSFET (0.425) Unit: mm For switching 0.3+0.1 –0.0 0.15+0.10 –0.05 1.25±0.10 2.1±0.1 0.9+0.2 –0.1 2 0.2±0.1 1 5˚ ue pl d in an c


    Original     		PDF 2002/95/EC) 2SK3539 2SK3539

    MIP2F3

    Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


    Original     		PDF PAMP13-N1 MIP2F3 MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent

    ma3df25

    Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
    Text: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF respons39 O-220D-A1 MA26P02 MAZ3082J 2SC5779 MA26P07 MAZ3091 2SC5829 MA27E020G ma3df25 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP01878 Silicon N-channel MOSFET Unit: mm +0.05 (0.30) 4 • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half 1


    Original     		PDF 2002/95/EC) UP01878 2SK3539

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP01878 Silicon N-channel MOSFET Unit: mm +0.05 (0.30) 4 • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half 1


    Original     		PDF 2002/95/EC) UP01878 2SK3539

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04878G Silicon N-channel MOSFET For switching • Features  Package  Allowing 2.5 V drive  Incorporating a built-in gate protection-diode  Reduction of the mounting area and assembly cost by one half


    Original     		PDF 2002/95/EC) UP04878G 2SK3539G

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP04878 Silicon N-channel MOSFET For switching 5 0.12+0.05 –0.02 4 • Features 5˚ • Allowing 2.5 V drive • Incorporating a built-in gate protection-diode • S-Mini type 6-pin package, reduction of the mounting area and


    Original     		PDF 2002/95/EC) XP04878 2SK3539

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP04878 Silicon N-channel MOSFET For switching 5 0.12+0.05 –0.02 4 • Features 5˚ • Allowing 2.5 V drive • Incorporating a built-in gate protection-diode • S-Mini type 6-pin package, reduction of the mounting area and


    Original     		PDF 2002/95/EC) XP04878 2SK3539