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    2SK303 Search Results

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    2SK303 Price and Stock

    Rochester Electronics LLC 2SK303-3-TB-E

    NCH J-FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK303-3-TB-E Bulk 18,000 1,480
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    • 10000 $0.2
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    Panasonic Electronic Components 2SK303100L

    MOSFET N-CH 100V 15A U-G1
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK303100L Digi-Reel 1
    • 1 $1.19
    • 10 $1.19
    • 100 $1.19
    • 1000 $1.19
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    2SK303100L Cut Tape 1
    • 1 $1.19
    • 10 $1.19
    • 100 $1.19
    • 1000 $1.19
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    2SK303100L Reel 3,000
    • 1 -
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    • 10000 $0.88101
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    Panasonic Electronic Components 2SK303000L

    MOSFET N-CH 100V 8A U-G1
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK303000L Digi-Reel 1
    • 1 $1.21
    • 10 $1.21
    • 100 $1.21
    • 1000 $1.21
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    2SK303000L Cut Tape 1
    • 1 $1.21
    • 10 $1.21
    • 100 $1.21
    • 1000 $1.21
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    2SK303000L Reel 3,000
    • 1 -
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    • 10000 $0.72779
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    onsemi 2SK303-3-TB-E

    2SK303 - N-Channel J-FET '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics 2SK303-3-TB-E 18,000 1
    • 1 $0.2048
    • 10 $0.2048
    • 100 $0.1925
    • 1000 $0.1741
    • 10000 $0.1741
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    SANYO Semiconductor Co Ltd 2SK303V3TA

    Electronic Component
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA 2SK303V3TA 3,985
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    Find more 2SK303 price and stock on Findchips.com

    2SK303 Datasheets (38)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SK303 Kexin N-Channel Junction Silicon FET Original PDF
    2SK303 Sanyo Semiconductor General-purpose amplifiers, impedance converters Original PDF
    2SK303 TY Semiconductor N-Channel Junction Silicon FET - SOT-23 Original PDF
    2SK303 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SK303 Unknown General Purpose Transistors Scan PDF
    2SK303 Unknown Scan PDF
    2SK303 Unknown SMD, Silicon N-Channel JFET Scan PDF
    2SK303 Unknown FET Data Book Scan PDF
    2SK303 Sanyo Semiconductor Sanyo Datasheets, Cross References and Circuit Examples Scan PDF
    2SK303 Sanyo Semiconductor Small Signal Junction FETS / MOSFETS Scan PDF
    2SK303 Sanyo Semiconductor CP Type Transistors Scan PDF
    2SK303 Sanyo Semiconductor Small Signal FETs Scan PDF
    2SK3030 Panasonic Silicon N-Channel Power F-MOS FET Original PDF
    2SK3030 Panasonic N-Channel Power F-MOS FET Original PDF
    2SK3030 Panasonic Silicon N-Channel Power MOSFET Original PDF
    2SK303000L Panasonic FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 8A UG-1 Original PDF
    2SK3031 Kexin N-Channel Power F-MOSFET Original PDF
    2SK3031 Panasonic N-Channel Power F-MOS FET Original PDF
    2SK3031 Panasonic Silicon N-Channel Power F-MOS FET Original PDF
    2SK3031 Panasonic Silicon N-Channel Power MOSFET Original PDF

    2SK303 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK303V4

    Abstract: 2SK303V3 2sK303L 2SK303
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SK303 Preliminary JFET LOW-FREQUENCY GENERAL-PURPOSE AMPLIFIER APPLICATIONS FEATURES „ * Ideal For Potentiometers * Analog Switches * Low Frequency Amplifiers * Constant Current Supplies * Impedance Conversion * Halogen Free


    Original     		PDF 2SK303 2SK303L-x-AE3-R 2SK303G-x-AE3-R OT-23 2SK303-V2 2SK303-V3 2SK303-V4 2SK303-V5 QW-R206-071 2SK303V4 2SK303V3 2sK303L 2SK303

    Untitled

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK3036 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage


    Original     		PDF 2SK3036

    2SK3034

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK3034 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage


    Original     		PDF 2SK3034 2SK3034

    5A diode

    Abstract: 2SK3037
    Text: Power F-MOS FETs 2SK3037 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage


    Original     		PDF 2SK3037 5A diode 2SK3037

    Untitled

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK3032 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage


    Original     		PDF 2SK3032

    Untitled

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK3035 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage unit: mm


    Original     		PDF 2SK3035

    Untitled

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK3037 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage


    Original     		PDF 2SK3037

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SK303 JFET LOW-FREQUENCY GENERAL-PURPOSE AMPLIFIER APPLICATIONS FEATURES „ * Ideal For Potentiometers * Analog Switches * Low Frequency Amplifiers * Constant Current Supplies * Impedance Conversion „ ORDERING INFORMATION Ordering Number


    Original     		PDF 2SK303 2SK303L-x-AE3-R 2SK303G-x-AE3-R OT-23 2SK303L-x-A3C-R 2SK303G-x-A3C-R OT-113S 2SK303L-x-AQ3-R 2SK303G-x-AQ3-R OT-723

    2SK3033

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK3033 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage


    Original     		PDF 2SK3033 2SK3033

    2SK3030

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK3030 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage


    Original     		PDF 2SK3030 2SK3030

    2SK3032

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK3032 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage


    Original     		PDF 2SK3032 2SK3032

    K3030

    Abstract: 2SK3030
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3030 Silicon N-channel power MOSFET • Features Unit: mm 6.5±0.1 5.3±0.1 4.35±0.1 0.5±0.1 0.8 max. 1.8±0.1 1 3 0.75±0.1 2.3±0.1 4.6±0.1 1 ■ Absolute Maximum Ratings TC = 25°C


    Original     		PDF 2002/95/EC) 2SK3030 SC-63 K3030 2SK3030

    2SK3036

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK3036 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage


    Original     		PDF 2SK3036 2SK3036

    Untitled

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK3034 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage


    Original     		PDF 2SK3034

    Untitled

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK3037 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage


    Original     		PDF 2SK3037

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SK303 JFET LOW-FREQUENCY GENERAL-PURPOSE AMPLIFIER APPLICATIONS  FEATURES * Ideal For Potentiometers * Analog Switches * Low Frequency Amplifiers * Constant Current Supplies * Impedance Conversion  ORDERING INFORMATION


    Original     		PDF 2SK303 2SK303G-xx-AE3-R 2SK303G-xx-A3C-R 2SK303G-xx-AQ3-R 2SK303L-xx-T92-B 2SK303G-xx-T92-B 2SK303L-xx-T92-K 2SK303G-xx-T92-K OT-23 OT-113S

    2SK303L

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SK303 JFET LOW-FREQUENCY GENERAL-PURPOSE AMPLIFIER APPLICATIONS FEATURES „ * Ideal For Potentiometers * Analog Switches * Low Frequency Amplifiers * Constant Current Supplies * Impedance Conversion „ ORDERING INFORMATION Ordering Number


    Original     		PDF 2SK303 2SK303L-x-AE3-R 2SK303G-x-AE3-R OT-23 2SK303L-x-A3C-R 2SK303G-x-A3C-R OT-113S 2SK303L-x-T92-B 2SK303G-x-T92-B 2SK303L-x-T92-K 2SK303L

    2SK3036

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK3036 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage


    Original     		PDF 2SK3036 2SK3036

    K3031

    Abstract: 2SK3031
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3031 Silicon N-channel power MOSFET • Features Unit: mm 6.5±0.1 5.3±0.1 4.35±0.1 0.5±0.1 0.8 max. 1.8±0.1 0.75±0.1 2.3±0.1 4.6±0.1 1 ■ Absolute Maximum Ratings TC = 25°C


    Original     		PDF 2002/95/EC) 2SK3031 SC-63 K3031 2SK3031

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3031 Silicon N-channel power MOSFET • Features Unit: mm 6.5±0.1 5.3±0.1 4.35±0.1 Unit V V A A mJ W 2 (5.5) 1 Parameter Symbol Rating Drain-source surrender voltage VDSS 100


    Original     		PDF 2002/95/EC) 2SK3031 SC-63 K3031

    2SK3031

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK3031 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage


    Original     		PDF 2SK3031 2SK3031

    2SK3034

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK3034 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage


    Original     		PDF 2SK3034 2SK3034

    2SK3036

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK3036 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage unit: mm


    Original     		PDF 2SK3036 2SK3036

    2SK303

    Abstract: No abstract text available
    Text: Ordering num ber:E N 856F ^ ¡ f N0.856F £ * j|ïjjf / 2SK303 II 1 N-Channel Junction Silicon FET // Low-Frequency II General-Purpose Amp Applications Features • Ideal for potentiometers, analog switches, low frequency amplifiers, constant current supplies, and


    OCR Scan     		PDF EN856F 2SK303 2SK303