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    2SK302 Search Results

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    2SK302 Price and Stock

    Micro Commercial Components 2SK3020-TP

    N-CHANNEL MOSFET,SOT-723
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK3020-TP Reel 8,000 8,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.02984
    		Buy Now
    2SK3020-TP Cut Tape 5,350 1
    • 1 $0.27
    • 10 $0.187
    • 100 $0.0911
    • 1000 $0.0528
    • 10000 $0.04576
    		Buy Now
    2SK3020-TP Digi-Reel 1
    • 1 $0.27
    • 10 $0.187
    • 100 $0.0911
    • 1000 $0.0528
    • 10000 $0.04576
    		Buy Now
    Mouser Electronics 2SK3020-TP 7,754
    • 1 $0.27
    • 10 $0.187
    • 100 $0.118
    • 1000 $0.053
    • 10000 $0.035
    		Buy Now

    Panasonic Electronic Components 2SK302500L

    MOSFET N-CH 60V 30A U-DL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK302500L Digi-Reel 1
    • 1 $2.19
    • 10 $2.19
    • 100 $2.19
    • 1000 $2.19
    • 10000 $2.19
    		Buy Now
    2SK302500L Cut Tape
    • 1 -
    • 10 -
    • 100 -
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    • 10000 -
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    2SK302500L Reel
    • 1 -
    • 10 -
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    Panasonic Electronic Components 2SK302200L

    MOSFET N-CH 60V 5A U-G2
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK302200L Digi-Reel 1
    • 1 $1.51
    • 10 $1.51
    • 100 $1.51
    • 1000 $1.51
    • 10000 $1.51
    		Buy Now
    2SK302200L Cut Tape
    • 1 -
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    2SK302200L Reel
    • 1 -
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    Panasonic Electronic Components 2SK3025U0L

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SK3025U0L 6,400
    • 1 $3.5304
    • 10 $3.5304
    • 100 $3.5304
    • 1000 $1.9417
    • 10000 $1.7652
    		Buy Now

    2SK302 Datasheets (64)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SK302 Toshiba Field Effect Transistor Silicon N Channel MOS Type Original PDF
    2SK302 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    2SK302 Unknown SMD, Metal oxide N-channel FET, depletion type Scan PDF
    2SK302 Unknown FET Data Book Scan PDF
    2SK302 Toshiba Field Effect Transistor Silicon N Channel MOS Type Scan PDF
    2SK302 Toshiba Silicon N channel field effect transistor for FM tuner, VHF RF amplifier applications Scan PDF
    2SK302 Toshiba Junction FETs / MOSFET / Transistors Scan PDF
    2SK3020 Sanyo Semiconductor N-CHANNEL SILICON MOSFET Original PDF
    2SK3020 Sanyo Semiconductor TP Type / MP Type Transistors Scan PDF
    2SK3020TP Sanyo Semiconductor DC/DC Converter Applications Original PDF
    2SK3021 Sanyo Semiconductor DC-DC converter Original PDF
    2SK3021 Sanyo Semiconductor TP Type / MP Type Transistors Scan PDF
    2SK3021TP Sanyo Semiconductor N-Channel Silicon MOSFET for DC/DC Converter Apps Original PDF
    2SK3022 Kexin N-Channel Power F-MOSFET Original PDF
    2SK3022 Panasonic Silicon N-Channel Power MOSFET Original PDF
    2SK3022 Panasonic Silicon N-Channel Power F-MOS FET Original PDF
    2SK3022 Panasonic N-Channel Power F-MOS FET Original PDF
    2SK3022 TY Semiconductor N-Channel Power F-MOSFET - TO-252 Original PDF
    2SK302200L Panasonic FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 5A UG-2 Original PDF
    2SK3023 Panasonic Silicon N-Channel Power F-MOS FET Original PDF

    2SK302 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IC MOSFET SMD Type Product specification 2SK3024 Features TO-252 Avalanche energy capacity guaranteed High-speed switching +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Low ON-resistance 2.3 +0.1 0.60-0.1 3.80 +0.15 5.55-0.15


    Original     		PDF 2SK3024 O-252

    2SK3024

    Abstract: 10A DIODE
    Text: Power F-MOS FETs 2SK3024 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage


    Original     		PDF 2SK3024 2SK3024 10A DIODE

    Untitled

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK3029 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage


    Original     		PDF 2SK3029

    2SK3028

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK3028 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage


    Original     		PDF 2SK3028 23nductor 2SK3028

    2SK3025

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK3025 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage


    Original     		PDF 2SK3025 2SK3025

    2SK3026

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK3026 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage


    Original     		PDF 2SK3026 O-220E 2SK3026

    K3022

    Abstract: 2SK3022
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3022 Silicon N-channel power MOSFET • Package • Avalanche energy capability guaranteed • High-speed switching • Low ON resistance Ron • No secondary breakdown • Low-voltage drive


    Original     		PDF 2002/95/EC) 2SK3022 K3022 2SK3022

    2SK3023

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK3023 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage


    Original     		PDF 2SK3023 2SK3023

    2SK3023

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK3023 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage


    Original     		PDF 2SK3023 2SK3023

    2SK3024

    Abstract: No abstract text available
    Text: IC MOSFET SMD Type Silicon N-Channel Power F-MOSFET 2SK3024 Features TO-252 Avalanche energy capacity guaranteed High-speed switching +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Low ON-resistance 2.3 +0.1 0.60-0.1 3.80


    Original     		PDF 2SK3024 O-252 2SK3024

    2SK3022

    Abstract: No abstract text available
    Text: IC MOSFET SMD Type Silicon N-Channel Power F-MOSFET 2SK3022 Features TO-252 Avalanche energy capacity guaranteed High-speed switching +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Low ON-resistance 2.3 +0.1 0.60-0.1 3.80


    Original     		PDF 2SK3022 O-252 2SK3022

    Untitled

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK3027 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage


    Original     		PDF 2SK3027

    K3024

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3024 Silicon N-channel power MOSFET • Features Unit: mm 6.5±0.1 5.3±0.1 4.35±0.1 • Non-contact relay • Solenoid drive • Motor drive • Control equipment • Switching mode regulator


    Original     		PDF 2002/95/EC) 2SK3024 K3024

    K3022

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3022 Silicon N-channel power MOSFET • Features Unit: mm 6.5±0.1 5.3±0.1 4.35±0.1 • Non-contact relay • Solenoid drive • Motor drive • Control equipment • Switching mode regulator


    Original     		PDF 2002/95/EC) 2SK3022 K3022

    2SK3025

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK3025 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage


    Original     		PDF 2SK3025 2SK3025

    ta2106

    Abstract: 2SK3020 62293
    Text: Ordering number:ENN6229 N-Channel Silicon MOSFET 2SK3020 DC/DC Converter Applications Features Package Dimensions • Low ON resistance. · 4V drive. unit:mm 2083B [2SK3020] 2.3 0.5 7.0 5.5 1.5 6.5 5.0 4 1.2 7.5 0.8 1.6 0.85 0.7 0.6 0.5 1 2 3 2.3 2.3 1 : Gate


    Original     		PDF ENN6229 2SK3020 2083B 2SK3020] 2092B ta2106 2SK3020 62293

    k3022

    Abstract: 2SK3022
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3022 Silicon N-channel power MOSFET • Features ■ Package • Avalanche energy capability guaranteed • High-speed switching • Low ON resistance Ron • No secondary breakdown


    Original     		PDF 2002/95/EC) 2SK3022 K3022 k3022 2SK3022

    2SK3029

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK3029 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage


    Original     		PDF 2SK3029 2SK3029

    k3025

    Abstract: 2SK3025
    Text: Power MOSFETs 2SK3025 Silicon N-channel power MOSFET • Features Unit: mm 6.5±0.1 5.3±0.1 4.35±0.1 • Non-contact relay • Solenoid drive • Motor drive • Control equipment • Switching mode regulator 0.8 max. 1.0±0.1 0.1±0.05 0.5±0.1 0.75±0.1


    Original     		PDF 2SK3025 k3025 2SK3025

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOS FETs 2SK3025 Silicon N-channel power MOS FET • Package ■ Features • Code U-DL • Pin Name 1: Gate 2: Drain 3: Source M Di ain sc te on na tin nc ue e/ d • Avalanche energy capability guaranteed


    Original     		PDF 2002/95/EC) 2SK3025 K3025

    td 1555

    Abstract: 2SK3028
    Text: Power F-MOS FETs 2SK3028 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage


    Original     		PDF 2SK3028 td 1555 2SK3028

    2SK3022

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK3022 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage


    Original     		PDF 2SK3022 2SK3022

    2SK241

    Abstract: 2sk241 mos fet dual-gate DC bias of FET 2SK302
    Text: 3. 3-TERMINAL MOS FET FOR USE AT HIGH-FREQUENCIES 2SK241, 2SK302 nal injector terminal for mixer circuits, and an AGC terminal. However, there is another method as shown in Figure 3.1. This shows a typical high-frequency amplifier in a Hi-Fi tuner. Gate 2 in the figure is


    OCR Scan     		PDF 2SK241, 2SK302) 2SK241) 2SK882) 2SK241 2sk241 mos fet dual-gate DC bias of FET 2SK302

    2SK302

    Abstract: No abstract text available
    Text: TO SH IBA 2SK302 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK302 Unit in mm FM TUNER, VHF RF AMPLIFIER APPLICATIONS • • • • Crss = 0.035pF Typ. NF = 1.7dB (Typ.) Gpg = 28dB (Typ.) 5-15V Low Reverse Transfer Capacitance Low Noise Figure


    OCR Scan     		PDF 2SK302 035pF O--236 2SK302