K2886
Abstract: 2SK2886 25a27
Text: 2SK2886 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅤ 2SK2886 ○ DC−DC コンバータモータドライブ用 単位: mm : RDS (ON) = 14mΩ(標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 31S (標準)
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2SK2886
10VID
SC-67
2-10R1B
K2886
2002/95/EC)
K2886
2SK2886
25a27
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2SK2886
Abstract: No abstract text available
Text: 2SK2886 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2886 Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 14 mΩ (typ.) High forward transfer admittance : |Yfs| = 31 S (typ.)
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2SK2886
2SK2886
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K2886
Abstract: 2SK2886
Text: 2SK2886 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2886 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 14 mΩ (typ.) z High forward transfer admittance : |Yfs| = 31 S (typ.)
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2SK2886
K2886
2SK2886
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2SK2886
Abstract: No abstract text available
Text: 2SK2886 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2886 Chopper Regulator, DC−DC Converter and Motor Drive Applications l Low drain−source ON resistance : RDS (ON) = 14 mΩ (typ.) l High forward transfer admittance : |Yfs| = 31 S (typ.)
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2SK2886
2SK2886
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k2886
Abstract: DATASHEET k2886 2sk2886 K288
Text: 2SK2886 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2886 Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 14 mΩ (typ.) High forward transfer admittance : |Yfs| = 31 S (typ.)
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2SK2886
k2886
DATASHEET k2886
2sk2886
K288
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k2886
Abstract: DR-45 Product POWER TRANSISTOR Electronics 0 DATASHEET k2886 2SK2886
Text: 2SK2886 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2886 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 14 mΩ (typ.) z High forward transfer admittance : |Yfs| = 31 S (typ.)
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2SK2886
k2886
DR-45
Product POWER TRANSISTOR Electronics 0
DATASHEET k2886
2SK2886
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K2886
Abstract: 2SK2886 tf 130 JEITA SC-67
Text: 2SK2886 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅤ 2SK2886 ○ DC−DC コンバータモータドライブ用 単位: mm : RDS (ON) = 14mΩ(標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 31S (標準)
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2SK2886
10VID
SC-67
2-10R1B
K2886
2002/95/EC)
K2886
2SK2886
tf 130
JEITA SC-67
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Untitled
Abstract: No abstract text available
Text: 2SK2886 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2886 Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 14 mΩ (typ.) High forward transfer admittance : |Yfs| = 31 S (typ.)
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2SK2886
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k2886
Abstract: No abstract text available
Text: 2SK2886 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2886 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 14 mΩ (typ.) z High forward transfer admittance : |Yfs| = 31 S (typ.)
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2SK2886
k2886
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5252 F 1009 4-pin
Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4
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2SK2056
Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
Text: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1
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BCE0017B
2SK2056
2SK1603
2sk1603 datasheet
TOSHIBA "ULTRA HIGH SPEED" DIODE 1A
transistor 2SK1603
2SK3561 equivalent
2SK2915 EQUIVALENT
1045y
2SK3569 equivalent
2SK1078
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STR-G6551
Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
Text: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision
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2002-Sep.
STR-G6551
STR-F6654
g6551
TDA16822
STR-F6653
strg6551
IGBT cross reference
KA5M0565R
TOP224Y equivalent
BUP 312
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2SK3567 equivalent
Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
Text: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2
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BCE0017F
E-28831
BCE0017G
2SK3567 equivalent
2SK3569 equivalent
TPCA*8023
TK8A50D equivalent
2SK2056
2SK3878 equivalent
tpca8023
2SK941 equivalent
2SK3561 equivalent
2SK1603
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2SK3878 equivalent
Abstract: 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718
Text: [ 2 ] Selection Guide [ 2 ] Selection Guide [ 2 ] Selection Guide Power MOSFET Product Line-up ID = 0.5~20 A 1. VDSS (V) 12 16 20 30 40 50 60 100 150 180 ◊2SK2963 (0.7) ▲2SK2962 (0.7) ◊2SJ508 (1.9) ▲2SJ509 (1.9) ▲2SK3670 (1.7) ♦2SJ313 (5.0) ▼2SJ338 (5.0)
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2SK2963
2SK2962
2SJ508
2SJ509
2SK3670
2SJ313
2SJ338
2SK2013
2SK2162
2SJ360
2SK3878 equivalent
2sk2611
2SK3759
2SK3878
2SK3869
2SK2013
toshiba POWER MOS FET 2sj 2sk
2SK3868
2SK3567 equivalent
2SK2718
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TPCA*8064
Abstract: TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028
Text: 2010-3 PRODUCT GUIDE MOSFETs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4
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BCE0082B
TPCA*8064
TK12A10K3
TPCA8077
2SK3567 equivalent
SSM3J328
TPCA8077-H
TJ11A10M3
TK50E06K3A
TPCA*8077
TPCA8028
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GT30F124
Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs
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2010/9SCE0004K
SC-43)
2SC1815
700the
GT30F124
TPCP8R01
GT30J124
JAPANESE 2SC TRANSISTOR 2010
smd transistor h2a
smd marking 8L01
tk25e06k3
GT45F122
gt30g124
GT30F123
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IRF540 complementary
Abstract: IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR
Text: Sales type RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L RFP25N05 RFP14N05 HUF75344P3 HUF75344S3S HUF75345S3S HUF75345G3 HUF75343S3S HUF75307D3S HUF75344G3 HUF75345P3 HUF75343P3 HUF5343G3 HUF75321P3 HUF75329P3
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RFP6N50
RFD16N03LSM
RFP15N05L
RFP50N05
RFP15N05
RFP50N05L
RFD14N05L
RFD14N05LSM
RFD14N05SM
RFP14N05L
IRF540 complementary
IRFZ44N complementary
std2n52
TOSHIBA IRFZ44A datasheet
STP2NA60
SSH6N80
rfp60n06
ste38na50
IRF630 complementary
IRF3205 IR
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transistor bc 245
Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243
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SC-43)
2SC1815
TPS615
TPS616
TPS610
transistor bc 245
247Y
smd transistor h2a
gt30g122
gt35j321
GT45F123
MARKING SMD PNP TRANSISTOR h2a
GT45F122
GT45f122 Series
gt30f122
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YTA630
Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509
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2N7000
2N7002
2SJ377
2SJ378
2SJ380
2SJ401
2SJ402
2SJ407
2SJ412
2SJ419
YTA630
MTW14P20
BSS125
MTAJ30N06HD
2SK2837 equivalent
SMU10P05
SMP60N06 replacement
STE180N10
RFH75N05E
IRFD620
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2SK2886
Abstract: nsi 60 jg
Text: TOSHIBA 2SK2886 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2SK2886 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm CHOPPER REGULATORS, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 10 ±0.3 r
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2SK2886
2SK2886
nsi 60 jg
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Untitled
Abstract: No abstract text available
Text: T O S H IB A 2SK2886 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M O S TYPE tt-M O S V 2SK2886 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATORS, DC-DC CONVERTER A N D M O TOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS
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2SK2886
--45A,
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2SK2886
Abstract: nsi 60 jg S20 marking diode
Text: TOSHIBA 2SK2886 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2SK2886 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPjt CHOPPER REGULATORS, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 10 ±0.3 Low Drain-Source ON Resistance
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2SK2886
2SK2886
nsi 60 jg
S20 marking diode
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SK2886 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2SK2886 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATORS, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS • • •
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2SK2886
14mfi
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213H
Abstract: No abstract text available
Text: TO SHIBA 2SK2886 TOSHIBA FIELD EFFECT TRANSISTOR SILICON IM CHANNEL MOS TYPE tt-M OSV 2SK2886 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATORS, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • • • • INDUSTRIAL APPLICATIONS Unit in mm
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2SK2886
14mil
10msi&
--45A,
213H
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