k2314
Abstract: 2SK2314 2-10P1B a 833 180 16v
Text: 2SK2314 東芝電界効果トランジスタ 2 シリコンNチャネルMOS形 L −π−MOSⅤ 2SK2314 ○ リレー駆動DC−DC コンバータ用 ○ モータドライブ用 単位: mm z 4V 駆動です。 : RDS (ON) = 66mΩ (標準) z オン抵抗が低い。
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2SK2314
10VID
O-220AB
SC-46
2-10P1B
K2314
2002/95/EC)
k2314
2SK2314
2-10P1B
a 833 180 16v
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2SK2314
Abstract: 2-10P1B 2SK23
Text: 2SK2314 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2314 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm 4 V gate drive Low drain−source ON resistance : RDS (ON) = 66 mΩ (typ.) High forward transfer admittance
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2SK2314
2SK2314
2-10P1B
2SK23
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2SK2314
Abstract: 2-10P1B
Text: 2SK2314 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2314 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm l 4 V gate drive l Low drain−source ON resistance : RDS (ON) = 66 mΩ (typ.) l High forward transfer admittance
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2SK2314
108transportation
2SK2314
2-10P1B
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k2314
Abstract: 2SK2314 k231 2-10P1B
Text: 2SK2314 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2314 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm 4-V gate drive Low drain−source ON resistance : RDS (ON) = 66 mΩ (typ.) High forward transfer admittance
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2SK2314
k2314
2SK2314
k231
2-10P1B
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2SK2314
Abstract: K2314 2-10P1B
Text: 2SK2314 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2314 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 66 mΩ (typ.) z High forward transfer admittance
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2SK2314
2SK2314
K2314
2-10P1B
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k2314
Abstract: 2SK2314 2-10P1B k231
Text: 2SK2314 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2314 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 66 mΩ (typ.) z High forward transfer admittance
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2SK2314
10lled
k2314
2SK2314
2-10P1B
k231
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K2314
Abstract: 2SK2314 2-10P1B
Text: 2SK2314 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2314 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 66 mΩ (typ.) z High forward transfer admittance
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2SK2314
K2314
2SK2314
2-10P1B
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5252 F 1009 4-pin
Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4
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mosfet cross reference
Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
Text: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local
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2SK2056
Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
Text: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1
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BCE0017B
2SK2056
2SK1603
2sk1603 datasheet
TOSHIBA "ULTRA HIGH SPEED" DIODE 1A
transistor 2SK1603
2SK3561 equivalent
2SK2915 EQUIVALENT
1045y
2SK3569 equivalent
2SK1078
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2SK3567 equivalent
Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
Text: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2
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BCE0017F
E-28831
BCE0017G
2SK3567 equivalent
2SK3569 equivalent
TPCA*8023
TK8A50D equivalent
2SK2056
2SK3878 equivalent
tpca8023
2SK941 equivalent
2SK3561 equivalent
2SK1603
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2SK3878 equivalent
Abstract: 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718
Text: [ 2 ] Selection Guide [ 2 ] Selection Guide [ 2 ] Selection Guide Power MOSFET Product Line-up ID = 0.5~20 A 1. VDSS (V) 12 16 20 30 40 50 60 100 150 180 ◊2SK2963 (0.7) ▲2SK2962 (0.7) ◊2SJ508 (1.9) ▲2SJ509 (1.9) ▲2SK3670 (1.7) ♦2SJ313 (5.0) ▼2SJ338 (5.0)
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2SK2963
2SK2962
2SJ508
2SJ509
2SK3670
2SJ313
2SJ338
2SK2013
2SK2162
2SJ360
2SK3878 equivalent
2sk2611
2SK3759
2SK3878
2SK3869
2SK2013
toshiba POWER MOS FET 2sj 2sk
2SK3868
2SK3567 equivalent
2SK2718
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schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455
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P462-ND
P463-ND
LNG295LFCP2U
LNG395MFTP5U
US2011)
schematic diagram atx Power supply 500w
pioneer PAL 012A
1000w inverter PURE SINE WAVE schematic diagram
600va numeric ups circuit diagrams
winbond bios 25064
TLE 9180 infineon
smsc MEC 1300 nu
TBE schematic diagram inverter 2000w
DK55
circuit diagram of luminous 600va UPS
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IRF9310
Abstract: mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution
Text: TMOS Power MOSFET Cross Reference This Cross Reference lists MOSFETs by either industry standard part number or by manufacturer’s part number for which there is an ON Semiconductor nearest or similar replacement. For devices not listed, or for additional
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device2176
r14153
CR108/D
IRF9310
mosfet cross reference
korea IRFZ44
IRF 949
replacement BUZ 36
philips master replacement guide
2SK2146
IRF540 substitution
MOSFET TOSHIBA 2SK
IRF510 substitution
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STF12A80
Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
Text: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer
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02CZ10
02CZ11
02CZ12
02CZ13
02CZ15
02CZ16
02CZ18
02CZ2
02CZ20
STF12A80
BSTC1026
BSTD1046
BTB04-600SAP
STF6A80
BSTD1040
TO510DH
BSTC1040
TO812NJ
BTB15-700B
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2SK2314
Abstract: 2-10P1B
Text: TO SHIBA 2SK2314 TO SHIBA FIELD EFFECT TRANSISTOR SILICON N C HANN EL MOS TYPE L2-? r-M O S V 2SK2314 INDUSTRIAL APPLICATIONS U nit in mm HIGH SPEED, HIGH CURRENT SW ITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER A N D M O TO R DRIVE 10.3MAX. APPLICATIONS
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2SK2314
428/iH,
2SK2314
2-10P1B
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2-10P1B
Abstract: 2SK2314
Text: T O S H IB A 2SK2314 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOSV 2SK2314 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm AX. 3.0 4 V Gate Drive
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2SK2314
2-10P1B
2SK2314
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2SK2314
Abstract: No abstract text available
Text: TOSHIBA FIELD EFFECT TRANSISTOR SEM ICONDUCTOR TO SH IBA TECHNICAL 2SK2314 DATA SILICON N CHANNEL MOS TYPE L 2- tt - M O S V (2SK2314) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U n it in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE
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2SK2314
2SK2314)
100//A
2SK2314
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 2SK2314 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M O S TYPE L2- tt-M O S V 2SK2314 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER A N D M O TOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS 03.6 ±0.2
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2SK2314
20kil)
IAR-27A,
428//H
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SK2314 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2- tt-M O SV 2SK2314 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 4V Gate Drive Low Drain-Sorce ON Resistance : Rjjg (ON)=
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2SK2314
20kf2)
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2-10P1B
Abstract: 2SK2314
Text: TO SHIBA 2SK2314 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOSV 2SK2314 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS . 4V Gate Drive
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2SK2314
66mfl
2-10P1B
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2SK2314
Abstract: 2SK2314F AE 27A
Text: TOSHIBA FIELD EFFECT TRANSISTOR SEM ICONDUCTOR TO SH IBA TECHNICAL 2SK2314 DATA SILICON N CHANNEL MOS TYPE L 2- tt - M O S V (2SK2314) INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE
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2SK2314
2SK2314)
66mil
100//A
2SK2314
2SK2314F
AE 27A
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SK2314 T O S H IB A FIELD EFFEC T T R A N S IS T O R mm S ILIC O N N C H A N N E L M O S TYPE L 2-7 r- M O SV mm • m. m m INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE
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2SK2314
20kfi)
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Jab zener
Abstract: No abstract text available
Text: POWER MOS FET 2. L2-tt-MOSV Vgs=4V drive type Ultra-low on-resistance MOS FET series featuring as high density as 4.4 mcell/inch2 achieved by toshiba microscopic processing technology. • 15% less on-resistance per unit area (In comparison with Rusion) M A X of L 2-7T-MOS IV)
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T0-220
2SJ334
2SK2312
Packag55
2SK1379
Jab zener
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