Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2SK2312 Search Results

    SF Impression Pixel

    2SK2312 Price and Stock

    Toshiba America Electronic Components 2SK2312(PP,F)

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SK2312(PP,F) 37,596
    • 1 $3.168
    • 10 $3.168
    • 100 $3.168
    • 1000 $1.188
    • 10000 $1.188
    		Buy Now

    2SK2312 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SK2312 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    2SK2312 Toshiba N-Channel MOSFET Original PDF
    2SK2312 Toshiba TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Original PDF
    2SK2312 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK2312 Toshiba Original PDF
    2SK2312 Toshiba Field Effect Transistor Silicon N Channel MOS Type (Power (L, 2)-pi-MOS V) Scan PDF
    2SK2312 Toshiba Silicon N channel field effect transistor for high speed, high current switching applications, chopper regulator, DC-DC converter and motor drive applications Scan PDF
    2SK2312(F) Toshiba 2SK2312 - MOSFETs N-Ch 60V 45A Rdson 0.017 Ohm Original PDF

    2SK2312 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK2312

    Abstract: No abstract text available
    Text: 2SK2312 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2312 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm l 4 V gate drive l Low drain−source ON resistance : RDS (ON) = 13 mΩ (typ.) l High forward transfer admittance


    Original     		PDF 2SK2312 2SK2312

    k2312

    Abstract: k2312 transistor 2SK2312
    Text: 2SK2312 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2312 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 13 mΩ (typ.) z High forward transfer admittance


    Original     		PDF 2SK2312 k2312 k2312 transistor 2SK2312

    k2312

    Abstract: k2312 transistor 2SK2312 toshiba motor k231
    Text: 2SK2312 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2312 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm 4-V gate drive Low drain−source ON resistance : RDS (ON) = 13 mΩ (typ.) High forward transfer admittance


    Original     		PDF 2SK2312 k2312 k2312 transistor 2SK2312 toshiba motor k231

    K2312

    Abstract: k2312 transistor
    Text: 2SK2312 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2312 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 13 mΩ (typ.) z High forward transfer admittance


    Original     		PDF 2SK2312 K2312 k2312 transistor

    K2312

    Abstract: k2312 transistor
    Text: 2SK2312 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2312 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 13 mΩ (typ.) z High forward transfer admittance


    Original     		PDF 2SK2312 K2312 k2312 transistor

    2sk2312

    Abstract: transistor BR 471 A
    Text: 2SK2312 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2312 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm 4 V gate drive Low drain−source ON resistance : RDS (ON) = 13 mΩ (typ.) High forward transfer admittance


    Original     		PDF 2SK2312 2sk2312 transistor BR 471 A

    5252 F 1009 4-pin

    Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
    Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original     		PDF

    2SK2056

    Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
    Text: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1


    Original     		PDF BCE0017B 2SK2056 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078

    2SK3567 equivalent

    Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
    Text: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2


    Original     		PDF BCE0017F E-28831 BCE0017G 2SK3567 equivalent 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603

    STK411-230E

    Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
    Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for


    Original     		PDF STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D

    2SK3878 equivalent

    Abstract: 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718
    Text: [ 2 ] Selection Guide [ 2 ] Selection Guide [ 2 ] Selection Guide Power MOSFET Product Line-up ID = 0.5~20 A 1. VDSS (V) 12 16 20 30 40 50 60 100 150 180 ◊2SK2963 (0.7) ▲2SK2962 (0.7) ◊2SJ508 (1.9) ▲2SJ509 (1.9) ▲2SK3670 (1.7) ♦2SJ313 (5.0) ▼2SJ338 (5.0)


    Original     		PDF 2SK2963 2SK2962 2SJ508 2SJ509 2SK3670 2SJ313 2SJ338 2SK2013 2SK2162 2SJ360 2SK3878 equivalent 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718

    2SK4207

    Abstract: to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03
    Text: 製品カタログ 2009-9 東芝半導体 製品カタログ MOSFET SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3


    Original     		PDF BCJ0082B BCJ0082A 2SK4207 to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03

    TPCA*8064

    Abstract: TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028
    Text: 2010-3 PRODUCT GUIDE MOSFETs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original     		PDF BCE0082B TPCA*8064 TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028

    IRF540 complementary

    Abstract: IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR
    Text: Sales type RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L RFP25N05 RFP14N05 HUF75344P3 HUF75344S3S HUF75345S3S HUF75345G3 HUF75343S3S HUF75307D3S HUF75344G3 HUF75345P3 HUF75343P3 HUF5343G3 HUF75321P3 HUF75329P3


    Original     		PDF RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L IRF540 complementary IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR

    2SK3566 equivalent

    Abstract: 2SK3562 equivalent 2SK3561 equivalent 2SK3878 equivalent 2SK3568 equivalent 2SK3911 equivalent 2SK941 equivalent tpc8118 equivalent replacement tpc8118 2SK3767 equivalent
    Text: 2007-12 PRODUCT GUIDE Power MOSFETs Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2


    Original     		PDF BCE0017E S-167 BCE0017F 2SK3566 equivalent 2SK3562 equivalent 2SK3561 equivalent 2SK3878 equivalent 2SK3568 equivalent 2SK3911 equivalent 2SK941 equivalent tpc8118 equivalent replacement tpc8118 2SK3767 equivalent

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2312 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2- tt-M O S V 2 S K2 3 1 2 HIGH SPEED, HIGH CURRENT SW ITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER A N D M O TO R DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS


    OCR Scan     		PDF 2SK2312 13mfl 20kf2)

    K2312

    Abstract: 2sk2312 k1101
    Text: TOSHIBA 2SK2312 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOSV 2SK2312 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS 10 ± 0.3 4 V Gate Drive


    OCR Scan     		PDF 2SK2312 K2312 2sk2312 k1101

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2312 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-tt-MOSV HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 4V Gate Drive Low Drain-Source ON Resistance


    OCR Scan     		PDF 2SK2312 --13m

    K2312

    Abstract: 2sk2312
    Text: T O S H IB A 2SK2312 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOSV 2SK2312 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS r 4V Gate Drive


    OCR Scan     		PDF 2SK2312 K2312 2sk2312

    k2312

    Abstract: 2SK2312
    Text: TOSHIBA 2SK2312 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOSV 2SK2312 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 10 ±0.3 r ^3.2 ± 0.2


    OCR Scan     		PDF 2SK2312 k2312

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2312 Field Effect Transistor Silicon N Channel MOS Type L2-7t-MOS V High Speed, High Current Switching, DC-DC Converter Chopper Regulator and Motor Drive Applications Features • 4V Gate Drive • Low Drain-Source ON Resistance - R DS(ON) = 13m£2 (Typ.)


    OCR Scan     		PDF 2SK2312

    Untitled

    Abstract: No abstract text available
    Text: 2SK2312 TOSHIBA SILICON N CHANNEL MOS TYPE L2- tt-M OSV HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 3.2 ± 0 .2 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan     		PDF 2SK2312

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SK2312 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M O S TYPE L2- tt-M O S V 2SK2312 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER A N D M O TOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS 4V Gate Drive


    OCR Scan     		PDF 2SK2312 13mfl 20kil) --45A, J--250

    Jab zener

    Abstract: No abstract text available
    Text: POWER MOS FET 2. L2-tt-MOSV Vgs=4V drive type Ultra-low on-resistance MOS FET series featuring as high density as 4.4 mcell/inch2 achieved by toshiba microscopic processing technology. • 15% less on-resistance per unit area (In comparison with Rusion) M A X of L 2-7T-MOS IV)


    OCR Scan     		PDF T0-220 2SJ334 2SK2312 Packag55 2SK1379 Jab zener