Untitled
Abstract: No abstract text available
Text: 2SK2272-01R FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Features Outline Drawings High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±30V Guarantee Avalanche-proof TO-3PF Applications Switching regulators
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2SK2272-01R
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Untitled
Abstract: No abstract text available
Text: 2SK2274 •5 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII 2SK2274 Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 1.5Ω (typ.) High forward transfer admittance : |Yfs| = 2.5 S (typ.)
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2SK2274
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2SK2273
Abstract: No abstract text available
Text: Ordering number:ENN5047 N-Channel Silicon MOSFET 2SK2273 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2091A 0.4 3 0.5 [2SK2273] 0.16 0.95 0.95 2 1.9 2.9
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ENN5047
2SK2273
2SK2273]
2SK2273
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2SK2273
Abstract: No abstract text available
Text: Ordering number:ENN5047 N-Channel Silicon MOSFET 2SK2273 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2091A 0.4 3 0.5 [2SK2273] 0.16 0.95 0.95 2 1.9 2.9
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ENN5047
2SK2273
2SK2273]
2SK2273
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2SK2276
Abstract: No abstract text available
Text: 2SK2276 Power F-MOS FETs 2SK2276 Silicon N-Channel MOS Unit : mm For switching 6.5±0.1 5.3±0.1 • Features 1.8±0.1 2.5±0.1 4.35±0.1 3.0±0.1 ON-resistance RDS on 7.3±0.1 0.05 to 0.15 Rating Unit VDSS 60 V Gate-Source voltage VGSS ±20 V Drain current
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2SK2276
SC-63
2SK2276
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Untitled
Abstract: No abstract text available
Text: 2SK2272-01R N-channel MOS-FET FAP-IIA Series 900V > Features - 2,8Ω 5A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators
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2SK2272-01R
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2SK2274
Abstract: No abstract text available
Text: 2SK2274 •5 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII 2SK2274 Chopper Regulator, DC−DC Converter and Motor Drive Applications l Low drain−source ON resistance : RDS (ON) = 1.5Ω (typ.) l High forward transfer admittance
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2SK2274
2SK2274
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2SK2272-01R
Abstract: No abstract text available
Text: 2SK2272-01R N-channel MOS-FET FAP-IIA Series 900V > Features - 2,8Ω 5A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators
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2SK2272-01R
2SK2272-01R
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2SK2275
Abstract: IEI-1213 MEI-1202 MF-1134 DIODE 8069
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2275 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2275 is N-channel Power MOS Field Effect Transis- in millimeters tor designed for high voltage switching applications. 10.0 ± 0.3
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2SK2275
2SK2275
IEI-1213
MEI-1202
MF-1134
DIODE 8069
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2SK2277
Abstract: No abstract text available
Text: 2SK2277 Silicon MOS FETs Small Signal 2SK2277 Silicon N-Channel MOS Unit : mm For switching 1.5±0.1 ● Downsizing of sets by mini-type package and automatic insertion by magazine packing are available. 45˚ 0.4±0.08 +0.25 High-speed switching 0.1 ●
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2SK2277
2SK2277
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2sk2278
Abstract: 2SK2278L 2SK1317
Text: 2SK2278 L , 2SK2278 S Silicon N Channel MOS FET Application HDPAK 4 High speed power switching Features • • • • 4 1 2 High breakdown voltage VDSS = 1500 V High speed switching No secondary breakdown Suitable for Switching regulator, DC – DC converter
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2SK2278
2SK1317.
2SK2278L
2SK1317
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2SK2274
Abstract: No abstract text available
Text: 2SK2274 •5 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII 2SK2274 Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 1.5Ω (typ.) High forward transfer admittance : |Yfs| = 2.5 S (typ.)
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2SK2274
2SK2274
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2SK2279
Abstract: No abstract text available
Text: 6 0 V S / V - Z /Y 7 -M 0 S FE T 6 0 V SERIES POWER NIOSFET O U T L IN E D IM E N S IO N S 2SK2279 F2E 6N 60v 2 a • R A T IN G S A b s o lu te M axim um R a tin g s m Item a is n 3k Symbol fS?¥i£ S to ra g e T e m p e ra tu re "V 'T' C hannel T e m p e ra tu re
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OCR Scan
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2SK2279
2SK2279
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 2SK2275 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2275 is N -charm el P o w e r MOS F ield E ffect T ra n s is in m illim eters to r d e sig n e d fo r high v o lta g e s w itc h in g a p p lic a tio n s .
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OCR Scan
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2SK2275
2SK2275
IS/14
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 2SK2274 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSII 5 2SK2274 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS ^ 3 .2 ± 0 .2
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2SK2274
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2SK2274
Abstract: No abstract text available
Text: TOSHIBA 2SK2274 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SII 5 2SK2274 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS r <v> •
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2SK2274
100//S*
2SK2274
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Untitled
Abstract: No abstract text available
Text: 6 0 V V J-X /TO-MOSFET 60V SERIES POWER MOSFET O U T L I N E D IM E N S IO N S 2SK2279 F2E6N 60v 2a • R A T IN G S A b s o lu te Maxim um R a tin g s m Item b S to ra g e T em pera ture •f~-v {' >1niiWv.' Channel Tem pera ture K U i > • V - X '^lk
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2SK2279
10/-/S,
10//S.
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2SK22
Abstract: EN5047 2SK2273 TA-0067 b0401
Text: Ordering num ber:EN5047 2SK2273 N-Channel MOS Silicon FET No.5047 SAXYO Very High-Speed Switching Applications i F eatu res • Low ON resistance. • Very high-speed switching. • Low-voltage drive. A bsolute M axim um R atings atT a = 25°C Drain-to-Source Voltage
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EN5047
2SK2273
2SK22
TA-0067
b0401
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DIODE 8069
Abstract: transistor 8069 2SK2275 dc 8069 8069 diode
Text: DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 2SK2275 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2275 is N -ch a n n e l P o w e r M O S Field E ffect T ra n s is in m illim eters to r d e sig n e d fo r h ig h v o lta g e s w itc h in g a p p lic a tio n s .
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2SK2275
DIODE 8069
transistor 8069
dc 8069
8069 diode
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SK2274 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SII 5 2SK2274 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • Low Drain-Source ON Resistance
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OCR Scan
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2SK2274
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k123
Abstract: 2SK2274
Text: TOSHIBA 2SK2274 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSII 5 2SK2274 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 10 ±0.3 r ^3.2 ± 0.2
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2SK2274
100//S*
k123
2SK2274
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2SK2277
Abstract: 2SK2580 220E4 2SK2015 2SK2014
Text: FET, IGBT, IPD • Power F-MOS FETs Line-up Vgs =10V ÎV dss \ (V) 60 80 100 150 170 250 450 500 550 800 900 (A) \ 1 2SK2277 Mini-Powerl .0 2SK2014 UTypei.O ★2SK2047 I Type b.o (Id =1.2A) 2SK2538 220Fz.o ★2SK1834 220Fro ★2SK1980 N Type 7.0 ★ A2SK2128
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2SK2277
2SK2014
2SK2047
2SK2538
220Fz
2SK1834
220Fro
2SK1980
A2SK2128
220E-0
2SK2580
220E4
2SK2015
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100L
Abstract: 2SK2279
Text: • O U T L IN E D IM E N S IO N S Case : E-pack 2SK2279 F2E6N 6.6 ±0-2 2.55±0-2 0.5 ±».i 0.5 0.6±0-2 ll±o.2 [Unit • mm] r a t in g s ■ Absolute Maximum Ratings m- Item IE i r Symbol s Storage Temperature f ti' Channel Temperature K u 'i y • v — x us j+
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60vvu-X
2SK2279
bS10aÃ
widthS10,
S1/100
100L
2SK2279
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2SK2771-01R
Abstract: 2sk2761 2SK2082
Text: 7 -M OSFET / Power MOSFETs J |^ j FAP-IIA ÿ ' J - X » 5£ FAP-IIA series Continued VBBS to (pulse) lo Device type Volte 2SK1983-01 2SK2029-01L, S 2SK1984-01MR 2SK1942-01 2SK2224-01R 2SK1945-01L, S 2SK1943-01 2SK1985-01MR 2SK1944-01 2SK2272-01R 2SK2082-01
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O-220AB
O-220
O-220F15
2SK2771-01R
2sk2761
2SK2082
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