Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2SK190 Search Results

    SF Impression Pixel

    2SK190 Price and Stock

    Sony Batteries 2SK1904

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics 2SK1904 5,700
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote

    SANYO Semiconductor Co Ltd 2SK1904

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SK1904 4,800
    • 1 $4.176
    • 10 $4.176
    • 100 $4.176
    • 1000 $2.088
    • 10000 $2.088
    Buy Now
    2SK1904 36
    • 1 $8.4
    • 10 $6.16
    • 100 $5.6
    • 1000 $5.6
    • 10000 $5.6
    Buy Now

    onsemi 2SK1909-DL-E

    2SK1909 - N-Channel 4V Drive Series '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics 2SK1909-DL-E 3,000 1
    • 1 $1.75
    • 10 $1.75
    • 100 $1.65
    • 1000 $1.49
    • 10000 $1.49
    Buy Now

    2SK190 Datasheets (41)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK190 Hitachi Semiconductor Silicon N-Channel Junction FET Scan PDF
    2SK190 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SK190 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SK190 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK190 Unknown FET Data Book Scan PDF
    2SK1900 Sanyo Semiconductor N-Channel Silicon MOSFET Original PDF
    2SK1900 Unknown N-Channel Power MOSFET Scan PDF
    2SK1900 Unknown FET Data Book Scan PDF
    2SK1900 Sanyo Semiconductor TO-3PB, ZP, SMP Type Transistors Scan PDF
    2SK1900 Sanyo Semiconductor Ultra High Speed Switching Transistors Scan PDF
    2SK1900 Sanyo Semiconductor Large Signal Power MOSFET Scan PDF
    2SK1900FD Unknown N-Channel Power MOSFET Scan PDF
    2SK1901 Sanyo Semiconductor Ultra High Speed Switching Transistors Scan PDF
    2SK1902 Sanyo Semiconductor Original PDF
    2SK1902 Sanyo Semiconductor Ultra High Speed Switching Transistors Scan PDF
    2SK1903 Sanyo Semiconductor Ultra High Speed Switching Transistors Scan PDF
    2SK1903 Sanyo Semiconductor Transistor TO-220AB Scan PDF
    2SK1904 Sanyo Semiconductor Ultrahigh-speed switching Original PDF
    2SK1904 Unknown Scan PDF
    2SK1904 Unknown FET Data Book Scan PDF

    2SK190 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK1902

    Abstract: No abstract text available
    Text: 2SK1902 N- Channel MOS Silicon FET Very High-Speed Switching Applications TENTATIVE Features and Applications • Low ON-state resistance. • Very high speed switching. • Low voltage drive. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage


    Original
    PDF 2SK1902 O-220 990929TM2fXHD 2SK1902

    2SK1904

    Abstract: No abstract text available
    Text: Ordering number:EN4211 N-Channel Silicon MOSFET 2SK1904 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. unit:mm 2063A [2SK1904]


    Original
    PDF EN4211 2SK1904 2SK1904] O-220ML 2SK1904

    2SK1900

    Abstract: ITR02166 ITR02167 ITR02168 ITR02169 ITR02170 ITR02171
    Text: 2SK1900 Ordering number : EN4210A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK1900 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. Low-voltage drive. Enables simplified fabrication, high-density mounding, and miniaturization in end products due to the surface mountable


    Original
    PDF 2SK1900 EN4210A PW10s, 2SK1900 ITR02166 ITR02167 ITR02168 ITR02169 ITR02170 ITR02171

    Untitled

    Abstract: No abstract text available
    Text: 2SK1900 Ordering number : EN4210A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK1900 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. Low-voltage drive. Enables simplified fabrication, high-density mounding, and miniaturization in end products due to the surface mountable


    Original
    PDF EN4210A 2SK1900

    2SK1905

    Abstract: No abstract text available
    Text: Ordering number:EN4649 N-Channel Silicon MOSFET 2SK1905 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating easy mounting. unit:mm 2063A


    Original
    PDF EN4649 2SK1905 2SK1905] O-220ML 2SK1905

    2SK1907

    Abstract: No abstract text available
    Text: Ordering number : EN4226 SANYO Semiconductors DATA SHEET 2SK1907 N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2093A [2SK1907] 4.5 1.3 1.6 8.8 11.5 0.9 10.2 1.2 11.0 0.8 9.4 • Low ON resistance. · Ultrahigh-speed switching.


    Original
    PDF EN4226 2SK1907 2SK1907] 2SK1907-applied 2SK1907

    Untitled

    Abstract: No abstract text available
    Text: 2SK1908 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)15 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)60 Minimum Operating Temp (øC)


    Original
    PDF 2SK1908

    2SK1909

    Abstract: No abstract text available
    Text: Ordering number:EN4227 N-Channel Silicon MOSFET 2SK1909 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2093A [2SK1909] 4.5 1.3 1.6 8.8 11.5 0.9 10.2 1.2 11.0 0.8 9.4 • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive.


    Original
    PDF EN4227 2SK1909 2SK1909] 2SK1909-applied 2SK1909

    2SK1905

    Abstract: EN4649
    Text: Ordering number:EN4649 N-Channel Silicon MOSFET 2SK1905 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating easy mounting. unit:mm 2063A


    Original
    PDF EN4649 2SK1905 2SK1905] O-220ML 2SK1905 EN4649

    2SK1904

    Abstract: No abstract text available
    Text: Ordering number:EN4211 N-Channel Silicon MOSFET 2SK1904 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. unit:mm 2063A [2SK1904]


    Original
    PDF EN4211 2SK1904 2SK1904] O-220ML 2SK1904

    2SK1908

    Abstract: BX-0927
    Text: Ordering number:EN4650 N-Channel Silicon MOSFET 2SK1908 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2090A [2SK1908] 10.2 4.5 3 1.2 2.55 0 to 0.3 0.4 1 : Gate 2 : Drain 3 : Source SANYO : SMP-FD 2.7 2.55 2 1.35 1 0.8 2.55 Specifications


    Original
    PDF EN4650 2SK1908 2SK1908] 2SK1908-applied 2SK1908 BX-0927

    EN4650

    Abstract: 2SK1908
    Text: Ordering number:EN4650 N-Channel Silicon MOSFET 2SK1908 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2090A [2SK1908] 10.2 4.5 3 1.2 2.55 0 to 0.3 0.4 1 : Gate 2 : Drain 3 : Source SANYO : SMP-FD 2.7 2.55 2 1.35 1 0.8 2.55 Specifications


    Original
    PDF EN4650 2SK1908 2SK1908] 2SK1908-applied EN4650 2SK1908

    Untitled

    Abstract: No abstract text available
    Text: 2SK1900FD Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)15 I(D) Max. (A)30 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)120 @Pulse Width (s) (Condition)10u Absolute Max. Power Diss. (W)1.65 Minimum Operating Temp (øC)-55


    Original
    PDF 2SK1900FD

    2SK1909

    Abstract: No abstract text available
    Text: Ordering number : EN4227 SANYO Semiconductors DATA SHEET 2SK1909 N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features Package Dimensions unit:mm 2093A [2SK1909] 4.5 1.3 1.6 8.8 11.5 0.9 10.2 11.0 20.9 1.2 0.8 9.4 • Low ON resistance. · Ultrahigh-speed switching.


    Original
    PDF EN4227 2SK1909 2SK1909] 2SK1909-applied 2SK1909

    d3s diode

    Abstract: No abstract text available
    Text: 2SK1906 LD L o w D rive S eries V D3S= 1 0 0 V 2063 N Channel Power M OSFET F e a tu re s • Low ON resistance. - Very high-speed switching. •Low-voltage drive. ■M icaless package facilitating mounting. A b s o lu te M ax im u m R a tin g s a t Ta = 25°C


    OCR Scan
    PDF 2SK1906 apacit63 51193TH X-8377 Na4225-l/3 d3s diode

    2SK1904

    Abstract: No abstract text available
    Text: Ordering n u m b e r:EN42 1 1 _ 2SK1904 No.4211 N -Channel MOS Silicon FET Very High-Speed Switching Applications F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. - M icaless package facilitating m ounting.


    OCR Scan
    PDF EN4211 2SK1904 10//s, 2SK1904

    V222A

    Abstract: No abstract text available
    Text: 2SK1907 2093 2090 LD Low D rive S e rie s VdsS= 100V N Channel Power MOSFET i|M226 F e a tu re s - Low ON resistance. - Very high-speed switching. • Low-voltage drive. • Surface mount type device making the following possible. • Reduction in the number of m anufacturing processes for 2SK1907-applied equipment.


    OCR Scan
    PDF 2SK1907 2SK1907-applied V222A

    100AVS

    Abstract: No abstract text available
    Text: 2SK1900 2090 2093 LD L o w D rive S e r i e s VDSs = 60V N Channel Power MOSFET E'42 10 F e a tu re s • Low ON resistance. • Very high-speed switching. •Low-voltage drive. • Surface m ount type device m aking the following possible. • Reduction in the num ber of m anufacturing processes for 2SK1900-applied equipm ent.


    OCR Scan
    PDF 2SK1900 2SK1900-applied V0D-30V 100AVS

    2SK1909

    Abstract: i0c0
    Text: 2SK1909 2093 2090 LD L o w D rive S eries V DSS= 1 0 0 V N Channel Power MOSFET 4227 F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Surface m ount type device m aking the following possible. • Reduction in the num ber of m anufacturing processes for 2SK1909-applied equipm ent.


    OCR Scan
    PDF 2SK1909 2SK1909-applied 10//s, Temperatur10V 2SK1909 i0c0

    2SK1909

    Abstract: No abstract text available
    Text: Ordering number: EN 4227 2SK1909 No.4227 N-Channel MOS Silicon FËT Very High-Speed Switching Applications F eatures • Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Surface mount type device making the following possible. • Reduction in the number of manufacturing processes for 2SK1909-applied equipment.


    OCR Scan
    PDF EN4227 2SK1909 2SK1909-applied 2SK1909

    NO421

    Abstract: 2SK190 2SK1900
    Text: Ordering number: EN4210 _ 2SK190Ö No.4210 N-Channel MOS Silicon FET Very High-Speed Switching Applications F e a tu re s • Low ON resistance. •Very high-speed switching. • Low-voltage drive. • Surface m ount type device m aking the following possible.


    OCR Scan
    PDF EN4210 2SK190Ã 2SK1900-applied NO421 2SK190 2SK1900

    2SK190

    Abstract: 2SK1903 SC46 T0220AB
    Text: KNo. N * 5 4 4 8 SANYO =m m tm m m NO. % 5448 13196 2SK1903 Vifiiru unit Absolute Maximum Ratings / Ta = 25°C K W > - y -X S JB E v —h • y - x f l u i H I/^ > l g D C ) HI/-Y {A)VX) fii& ftH & K Vdss Vgss Id I dp Pd Tch Tstg PW Si IOlis, duty cycle £1%


    OCR Scan
    PDF 2SK1903 100mA 2SK190 2052C T0220AB 13196YK^ 2SK1903 SC46

    2SK1906

    Abstract: No abstract text available
    Text: O rd e rin g n u m b e r: EN 4 2 2 5 2SK1906 N o.4225 N -Channel MOS Silicon FET Very High-Speed Switching Applications F e a tu r e s •Low ON resistance. • Very high-speed switching. • Low-voltage drive. ■M icaless package facilitating m ounting.


    OCR Scan
    PDF EN4225 2SK1906 10/us, 2SK1906

    2SK1902

    Abstract: BR v7
    Text: 2SK1902 its m • y mm. S illW y f V i'. unit ^ S i S ^ c S i S Absolute Maximum Ratings / T a = 2 5 °C F I'"!* V •V —XSH: y - F ■y - ^ m i ± F W VS2S& DC F V'-Y VflliJit (V^VX) Id PW = lOus, duty cycleS 1% Tc = 25°C I dp Pd Tch Tstg min I t E l e c t r i c a l Characteristics / Ta = 25°C


    OCR Scan
    PDF 2SK1902 100HA 13196YK^ 2SK1902 BR v7