2SK1815
Abstract: DDD310G A2245
Text: 2SK1815 S IP M O S F U J I P O W E R M O S -F E T N-CHAIMIMEL SILICON POWER MOS-FET _ - TTT ^ r r-111 o tr i I to • Features Outline Drawings • High current • Low no-resistance • N o secondary breakdow n • Low driving p o w e r
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2SK1815
--r-111
A2-245
DDD310G
A2245
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2SK1815
Abstract: 17 CA A2245
Text: 2SK1815 FUJI POWER MOS-FET í * ^ B nn N-CHANNEL SILICON POWER MOS-FET F - I I I • Features S E R I E S Outline Drawings • High current • Low no-resistance • No secondary breakdown • Low driving power • High forw ard Transconductance ■ Applications
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2SK1815
2SK1815
17 CA
A2245
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Untitled
Abstract: No abstract text available
Text: 2SK1815 SIPMOS FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET _ - • Features • • • • • TTT r -111 o h n l t o I Outline Drawings High current Low no-resistance No secondary breakdown Low driving power High forward Transconductance
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2SK1815
DDQ310D
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Untitled
Abstract: No abstract text available
Text: 2SK1815«. FUJI POWER M OS-FET N-CHAIMNEL SILICON POWER MOS-FET _ TTT - F - III • Features S E R I E S Outline Drawings • High current 5Æ*" • Low no-resistance • No secondary breakdown • Low driving power • High forward Transconductance
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2SK1815«
53BS-7685
ffl53
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90T03P
Abstract: 2SK956 10002 2SK906A 2SK1082 t009 2SK1388 2SK1661 2SK900 FUJI Semiconductors
Text: P U H STLdEOTiSDE COLLHER SEMICONDUCTOR INC 4ÔE D • 553Ô7TE GG01ÔD2 Db4 ■ COL T 3 > < V > Power MOSFET Advantages: • F-l Series Low RDS on • F-ll Series VGS +/- 30V Reduced turn off time . FAP-II Series High avalanche ruggedness VGS +/- 30V, Reduced turn
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FAP-11
T03PF
2SK957-01
T0220F
2SK958-01
T0220
2SK959-01
2SK1548-01
2SK1024-01
90T03P
2SK956
10002
2SK906A
2SK1082
t009
2SK1388
2SK1661
2SK900
FUJI Semiconductors
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2SK1815
Abstract: 2SK1388
Text: MOSFETs FAP-IIIA Series Automotive Types Logic Level Operation, Low Rds ON , High Avalanche Ruggedness, Integrated G-S Surge Protection, 60 Volts Device Type 2SK1822-01M 2SK2165-01 2SK2166-01 2SK2259-01M 2SK1823-01 2SK1969-01 Maximum Ratiilas I d (A) Pd (W)
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2SK1822-01M
2SK2165-01
2SK2166-01
2SK2259-01M
2SK1823-01
2SK1969-01
O220F15
0220F
T0220F15
T03PF
2SK1815
2SK1388
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2SK1506 22
Abstract: 2SK1388 2SK1084 2SK1090 2SK1390 2SK1083M 2SK1096M 2SK1505M 2SK1822-01M 2SK1823-01
Text: COLLMER SEMICONDUCTOR INC b3E ]> • 22307^2 0001Ô72 Hñfi BICOL <§ MOSFETs FAP-IIIA Series Automotive Types Logic Level Operation, Low R d S ON , High Avalanche Ruggedness, Integrated G-SSurge Protection, 60 Volts Device Type 2SK1822-01M 2SK1823-01 2SK1969-01
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2SK1822-01M
T0220F15
2SK1823-01
t03pf
2SK1969-01
2SK1818M
2SK1979
2SK1276
2SK1506 22
2SK1388
2SK1084
2SK1090
2SK1390
2SK1083M
2SK1096M
2SK1505M
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k1507
Abstract: K1507 MOSFET 90T03P 2SK1081 2SK1276 2SK1821 2SK1388 2SK1661 90.T03P 2SK1084
Text: FUJI [ITLilC&irOgDE COLLHER SEMICONDUCTOR INC MAE » 55367^5 GGQ1Ô02 DbM • C O L Power MOSFET Advantages: • F-l Series • F-ll Series Low RDS on VGS + /- 30V Reduced turn off time High avalanche ruggedness VGS + /- 30V, Reduced turn off time Logic level operation, low
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T03PF
2SK1081
2SK956-01
2SK1385-01
2SK957-01
T0220F
2SK958-01
T0220
2SK959-01
2SK1548-01
k1507
K1507 MOSFET
90T03P
2SK1276
2SK1821
2SK1388
2SK1661
90.T03P
2SK1084
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2SK1969-01
Abstract: No abstract text available
Text: COLLMER SEMICONDUCTOR INC b3E ]> • 22307^2 G001Ô72 4êfi « C O L <§ MOSFETs FAP-IIIA Series Automotive Types Logic Level Operation, Low RdS ON , High Avalanche Ruggedness, Integrated G-SSurge Protection, 60 Volts Device Type 2SK1822-01M 2SK1823-01 2SK1969-01
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2SK1822-01M
2SK1823-01
2SK1969-01
T0220F15
T03PF
2SK1505M
2SK2048
2SK1388
2SK1083M
2SK1096M
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k1507
Abstract: K1663 K1507 MOSFET 90t03p 25k956 2SK956 2SK1661 2SK1507 2SK1388 1n05
Text: FUJI G l T L t lC s ï r i jg û E C O L LH ER SEMICONDUCTOR INC MAE D • 5 5 3 6 7 ^ 5 0 Q 0 1 Ô 0 2 DbM « C O L Power MOSFET Advantages: • F-l Series • F-ll Series Low RDS on VGS + /- 30V Reduced turn off time High avalanche ruggedness VGS + /- 30V, Reduced turn
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T0220F15
K1663
k1507
K1663
K1507 MOSFET
90t03p
25k956
2SK956
2SK1661
2SK1507
2SK1388
1n05
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2SK1661
Abstract: 2SK727 2sk1084 2SK1090 2SK1024 2sk1021 2SK1385 2SK1821
Text: FUJI [ITLilC&irOgDE COLLHER SEMI CONDUCTOR INC MAE » 55367^5 GGQ1Ô02 DbM • C O L Power MOSFET Advantages: • F-l Series • F-ll Series Low RDS on VGS + /- 30V Reduced turn off time High avalanche ruggedness VGS + /- 30V, Reduced turn off time Logic level operation, low
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T03PF
2SK1661
2SK727
2sk1084
2SK1090
2SK1024
2sk1021
2SK1385
2SK1821
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