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    2sd742

    Abstract: IC104 2SB1172 2SB1172A 2SD1742
    Text: Power Transistors 2SB1172, 2SB1172A Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1742, 2SD742A Unit: mm 2SB1172 1.0 −60 VCBO Unit V 0.75±0.1 0.4±0.1 −60 4.6±0.4 Collector-emitter voltage 2SB1172 (Base open)


    Original
    2SB1172, 2SB1172A 2SD1742, 2SD742A 2SB1172 2sd742 IC104 2SB1172 2SB1172A 2SD1742 PDF

    2SD742

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1172, 2SB1172A Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1742, 2SD742A Unit: mm Collector-base voltage 2SB1172 (Emitter open)


    Original
    2002/95/EC) 2SB1172, 2SB1172A 2SD1742, 2SD742A 2SB1172 2SD742 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1172, 2SB1172A Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1742, 2SD742A Unit: mm Collector-base voltage 2SB1172 (Emitter open)


    Original
    2002/95/EC) 2SB1172, 2SB1172A 2SD1742, 2SD742A 2SB1172 PDF

    2SB1172

    Abstract: 2SB1172A 2SD1742
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1172, 2SB1172A Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1742, 2SD742A Unit: mm M Di ain sc te on na tin nc ue e/ d Collector-base voltage


    Original
    2002/95/EC) 2SB1172, 2SB1172A 2SD1742, 2SD742A 2SB1172 2SB1172 2SB1172A 2SD1742 PDF