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    2SD235 Price and Stock

    ROHM Semiconductor 2SD2351T106V

    TRANS NPN 50V 0.15A UMT3
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    DigiKey 2SD2351T106V Cut Tape 6,912 1
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    Mouser Electronics 2SD2351T106V 2,920
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    2SD2351T106V Cut Tape 5
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    Quest Components 2SD2351T106V 3,540
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    TME 2SD2351T106V 1
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    Chip1Stop 2SD2351T106V Cut Tape 43,625
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    ROHM Semiconductor 2SD2351T106W

    TRANS NPN 50V 0.15A UMT3
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    DigiKey 2SD2351T106W Cut Tape 677 1
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    2SD2351T106W Digi-Reel 677 1
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    Avnet Americas 2SD2351T106W Reel 3,000
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    Mouser Electronics 2SD2351T106W 2,106
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    Newark 2SD2351T106W Cut Tape 2,908 5
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    Quest Components 2SD2351T106W 2,240
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    TME 2SD2351T106W 20 1
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    Ameya Holding Limited 2SD2351T106W 100 1
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    Avnet Asia 2SD2351T106W 24 Weeks 3,000
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    Chip1Stop 2SD2351T106W Cut Tape 13,793
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    New Advantage Corporation 2SD2351T106W 30,000 1
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    Panasonic Electronic Components 2SD235800A

    TRANS NPN 10V 1A MT-2
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    DigiKey 2SD235800A Ammo Pack
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    Samtec Inc MTSW-113-22-S-D-235

    CONN HEADER VERT 26POS 2.54MM
    Free Sample
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    DigiKey MTSW-113-22-S-D-235 Bulk 1
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    Mouser Electronics MTSW-113-22-S-D-235
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    Newark MTSW-113-22-S-D-235 Bulk 1
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    Powell Electronics MTSW-113-22-S-D-235 352 1
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    Master Electronics MTSW-113-22-S-D-235
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    Sager MTSW-113-22-S-D-235 533 1
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    Samtec Inc MTSW-130-22-S-D-235

    CONN HEADER VERT 60POS 2.54MM
    Free Sample
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    DigiKey MTSW-130-22-S-D-235 Bulk 1
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    Avnet Americas MTSW-130-22-S-D-235 Bulk 1
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    Mouser Electronics MTSW-130-22-S-D-235
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    Newark MTSW-130-22-S-D-235 Bulk 1
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    Powell Electronics MTSW-130-22-S-D-235 127 1
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    Master Electronics MTSW-130-22-S-D-235
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    Sager MTSW-130-22-S-D-235 192 1
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    2SD235 Datasheets (101)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD235 Wing Shing Computer Components NPN EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) Original PDF
    2SD235 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SD235 Micro Electronics Semiconductor Device Data Book Scan PDF
    2SD235 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2SD235 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SD235 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD235 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SD235 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD235 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SD235 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SD235 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SD235 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SD235 Unknown Transistor Replacements Scan PDF
    2SD235 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD235 Unknown Cross Reference Datasheet Scan PDF
    2SD235 Semico Power Transistors Scan PDF
    2SD235 Toshiba Silicon NPN Diffused Junction Trasnsistor Scan PDF
    2SD235 Toshiba Japanese Transistor Data Book Scan PDF
    2SD2350 Collmer Semiconductor Power / High Speed / Transistors Scan PDF
    2SD2350 Unknown Semiconductor Master Cross Reference Guide Scan PDF

    2SD235 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Transistors SMD Type Product specification 2SD2359 Features Low collector-emitter saturation voltage VCE sat . Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. Absolute Maximum Ratings Ta = 25


    Original     		PDF 2SD2359

    2SB1538

    Abstract: 2SD2358
    Text: Transistors 2SD2358 Silicon NPN epitaxial planer type Unit: mm 1.05 2.5±0.1 ±0.05 0.15 6.9±0.1 4.0 0.8 0.2 0.7 1.0 1.0 • Features 0.65 max. 14.5±0.5 • Low collector to emitter saturation voltage VCE sat : < 0.15 V • Allowing supply with the radial taping


    Original     		PDF 2SD2358 2SB1538 2SB1538 2SD2358

    2SB435

    Abstract: 2SD235
    Text: 2SD235 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 ! Complement to 2SB435 ABSOLUTE MAXIMUM RATINGS TA=25℃ ℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25℃)


    Original     		PDF 2SD235 O-220 2SB435 2SB435 2SD235

    2sb1538

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2358 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB1538 Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) • Features • Low collector-emitter saturation voltage VCE(sat): < 0.15 V


    Original     		PDF 2002/95/EC) 2SD2358 2SB1538 2sb1538

    d2353

    Abstract: 2SD2353
    Text: 2SD2353 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2353 Power Amplifier Applications Unit: mm • High DC current gain: hFE = 800 to 3200 • Low collector saturation voltage: VCE sat = 0.4 V (typ.) Maximum Ratings (Tc = 25°C) Characteristics


    Original     		PDF 2SD2353 SC-67 d2353 2SD2353

    Untitled

    Abstract: No abstract text available
    Text: 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S Transistors General Purpose Transistor 50V, 0.15A 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S !External dimensions (Units : mm) !Features 1) High DC current gain. 2) High emitter-base voltage. (VCBO=12V) 3) Low saturation voltage.


    Original     		PDF 2SD2654 2SD2351 2SD2226K 2SD2227S 50mA/5mA) 2SD2654

    2SD2359

    Abstract: No abstract text available
    Text: Transistor 2SD2359 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 2.5±0.1 +0.25 0.4max. 0.4±0.08 4.0–0.20 45° +0.1 Low collector to emitter saturation voltage VCE sat . Mini Power type package, allowing downsizing of the equipment


    Original     		PDF 2SD2359 2SD2359

    2sb15

    Abstract: 2SB1538 2SD2358
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2358 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB1538 Unit: mm M Di ain sc te on na tin nc ue e/ d 6.9±0.1 4.0 • Low collector-emitter saturation voltage VCE(sat): < 0.15 V


    Original     		PDF 2002/95/EC) 2SD2358 2SB1538 2sb15 2SB1538 2SD2358

    2SB1537

    Abstract: 2SD2357 2sb15
    Text: Transistor 2SB1537 Silicon PNP epitaxial planer type For low-frequency amplification Complementary to 2SD2357 M Di ain sc te on na tin nc ue e/ d Unit: mm 0.4±0.08 0.5±0.08 1.5±0.1 2.5±0.1 +0.25 0.4max. 4.0–0.20 +0.1 45° 1.0–0.2 ● Low collector to emitter saturation voltage VCE sat .


    Original     		PDF 2SB1537 2SD2357 2SB1537 2SD2357 2sb15

    2SB1537

    Abstract: 2SD2357
    Text: Transistor 2SB1537 Silicon PNP epitaxial planer type For low-frequency amplification Complementary to 2SD2357 Unit: mm 2.5±0.1 +0.25 0.4max. 0.4±0.08 4.0–0.20 45° +0.1 ● Low collector to emitter saturation voltage VCE sat . Large collector power dissipation PC.


    Original     		PDF 2SB1537 2SD2357 2SB1537 2SD2357

    vmt3

    Abstract: No abstract text available
    Text: 2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S Transistors General Purpose Transistor 50V, 0.15A 2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S zExternal dimensions (Unit : mm) zFeatures 1) High DC current gain. 2) High emitter-base voltage. (VCBO=12V)


    Original     		PDF 2SD2707 2SD2654 2SD2351 2SD2226K 2SD2227S vmt3

    d2352

    Abstract: 2SD2352
    Text: 2SD2352 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2352 Power Amplifier Applications Unit: mm • High DC current gain: hFE = 800 to 3200 • Low collector saturation voltage: VCE sat = 0.3 V (typ.) Maximum Ratings (Tc = 25°C) Characteristics


    Original     		PDF 2SD2352 SC-67 d2352 2SD2352

    2SD2359

    Abstract: Silicon NPN Epitaxial Planar Type
    Text: Transistors SMD Type Silicon NPN Epitaxial Planar Type 2SD2359 Features Low collector-emitter saturation voltage VCE sat . Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.


    Original     		PDF 2SD2359 2SD2359 Silicon NPN Epitaxial Planar Type

    BJW transistor

    Abstract: SMD transistor MARKING bjw marking bjw MARKING BJV transistor bjv TRANSISTOR bjw 2SD2351 hFE CLASSIFICATION Marking
    Text: Transistors IC SMD Type General Purpose Transistor 2SD2351 Features High DC current gain. High emitter-base voltage. VCBO=12V Low saturation voltage. (Typ. VCE(sat)=0.3V at IC/IB=50mA/5mA) 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol


    Original     		PDF 2SD2351 50mA/5mA) 100ms. 50mA/5mA -10mA, 100MHz BJW transistor SMD transistor MARKING bjw marking bjw MARKING BJV transistor bjv TRANSISTOR bjw 2SD2351 hFE CLASSIFICATION Marking

    2SD235

    Abstract: 2SB435
    Text: SavantIC Semiconductor Product Specification 2SD235 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SB435 APPLICATIONS ·For low frequency power amplifier and switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to


    Original     		PDF 2SD235 O-220 2SB435 2SD235 2SB435

    2SB1539

    Abstract: 2SD2359
    Text: Transistor 2SB1539 Silicon PNP epitaxial planer type For low-frequency amplification Complementary to 2SD2359 Unit: mm 2.5±0.1 +0.25 0.4max. 0.4±0.08 4.0–0.20 45° +0.1 ● Low collector to emitter saturation voltage VCE sat . Large collector power dissipation PC.


    Original     		PDF 2SB1539 2SD2359 2SB1539 2SD2359

    at maga

    Abstract: 2SB1537 2SD2357
    Text: Transistor 2SD2357 Silicon NPN epitaxial planer type For low-frequency amplification Complementary to 2SB1537 Unit: mm 2.5±0.1 +0.25 0.4max. 0.4±0.08 4.0–0.20 45° +0.1 ● Low collector to emitter saturation voltage VCE sat . Large collector power dissipation PC.


    Original     		PDF 2SD2357 2SB1537 200MHz at maga 2SB1537 2SD2357

    2SD234

    Abstract: 2SD235 2SD235 Toshiba 2so234 SD235 2SD2354 2SB434 2SB435 transistor 2sd234 8bb4
    Text: r SILICON NPN DIFFUSED JUNCTION TRANSISTOR o • • 2 s d 234 À 2 s d 235 U n it in mm Audio Power A m p l if i e r A p p l i c a t i o n s ; V CE sat = Q 8 V 1 0 .3 M A X . # 3 ,6 ± a 3 ( T yp .) d c = l A ) 2SD235 ^ : P c = 3 5 w (To = 3 5 ^ ) 3^9 2 S B 4 34 , Z S B i 35 t ^ 7') t


    OCR Scan     		PDF 2so234 2sd235 2SB434, ZSB434 2SB435. 2SD234 220AB 2SD235 2SD235 Toshiba SD235 2SD2354 2SB434 2SB435 transistor 2sd234 8bb4

    2SD234

    Abstract: 2SD235 Toshiba transistor 2sd234 2SD235 2SD234Y toshiba 2sd234y 2SD235Y 2SD235O fbise 2SB435
    Text: '> U 3 > N P N i£ |fc tt£ » 2SD234, 2SD235 SILICON NPN DIFFUSED JUNCTION TRANSISTOR O Audio Power Amplifier Applications • \ : V ce sat = 0. 2V(Ty p.) (Ic = lA ) 2SD235 • V9 : Pc = 25W(Tc = 25°C) • 2SB434, 2SB435 ¿ 3 y 7 ! ) A y ft i; 'O4 ~t\ • Complementary to 2SB434 and 2SB435.


    OCR Scan     		PDF 2SD234, 2SD235 2SB434, 2SB435 2SB434 2SB435. 2SD234 2SD235 Toshiba transistor 2sd234 2SD235 2SD234Y toshiba 2sd234y 2SD235Y 2SD235O fbise

    2SD2353

    Abstract: No abstract text available
    Text: TOSHIBA 2SD2353 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2353 Unit in mm PO W ER AM PLIFIER APPLICATIONS • • 10 ±0.3 High DC Current Gain : hpE = 800~3200 Low Collector Saturation Voltage : v CE sat = °-4V (TyP-) DC Current Gain Colleetor-Emitter Saturation


    OCR Scan     		PDF 2SD2353 2SD2353

    2SD2226K

    Abstract: 2SD2351 VEBO-12V
    Text: h 7 >vZ. £ /Transistors 2SD2226K/2SD2351 2SD 2226K 2SD2351 x e $ * y 7 J l ' 7 U - ? B N P N y ,j 3 > b 7 > v Z $ Epitaxial Planar NPN Silicon Transistor —flS 'h it^ iB ig ffl/G e n e ra l Small Signal Amp. * ^ ^ J i & B I / D i m e n s i o n s Unit : mm


    OCR Scan     		PDF 2SD2226K/2SD2351 2SD2226K 2SD2351 50mA/5mA) 2SD2226K SC-59 2SD2351 VEBO-12V

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SD2353 10 +0.3 o MAXIMUM RATINGS Ta = 25°C C ollector-B ase V oltage C o llector-E m itter V oltage E m itter-B ase V oltage C ollector C u rren t DC P u lse B ase C u rre n t T a = 25°C C ollector Pow er D issipation Tc = 25°C Ju n c tio n T em p eratu re


    OCR Scan     		PDF 2SD2353

    2SD2171

    Abstract: No abstract text available
    Text: 2SD2537 / 2SD2171S 2SD2351 / 2SD2226K / 2SD2227S Transistors Medium Power Transistor 25V, 1.2A I 2SD2537 /2SD2171S •Features 1) 2) 3) •Absolute maximum ratings (Ta=25'C ) High O C current gain. High emitter-base voltage. (V c b o = LowVcEttM). (Max.


    OCR Scan     		PDF 2SD2537 2SD2171S 2SD2351 2SD2226K 2SD2227S /2SD2171S 2S02537 2SD2351, 2SD2171

    2SD2353

    Abstract: No abstract text available
    Text: TO SH IBA 2SD2353 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2SD2353 • High DC Current Gain : hpE - 800~3200 • Low Collector Saturation Voltage • V/~it! iA = Unit in mm 10 ±0.3 r ^3.2 ± 0.2 2.7±Q 2 CO cn ro o


    OCR Scan     		PDF 2SD2353 2SD2353