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    Panasonic Electronic Components 2SD21360RA

    TRANS NPN 60V 3A MT-3
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    2SD2136 Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SD2136 Panasonic NPN Transistor Original PDF
    2SD2136 Panasonic Silicon NPN triple diffusion planar type Original PDF
    2SD2136 Unisonic Technologies POWER TRANSISTOR Original PDF
    2SD2136 Various Russian Datasheets Transistor Original PDF
    2SD2136 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD2136 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD2136 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD2136 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD2136 Panasonic Silicon NPN triple diffusion planar type transistor Scan PDF
    2SD21360QA Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 60VCEO 3A MT-3 Original PDF
    2SD21360RA Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 60VCEO 3A MT-3 Original PDF
    2SD2136P Panasonic Silicon NPN Triple Diffusion Planar Type Power Transistor Original PDF
    2SD2136Q Panasonic Silicon NPN Triple Diffusion Planar Type Power Transistor Original PDF
    2SD2136R Panasonic Silicon NPN Triple Diffusion Planar Type Power Transistor Original PDF

    2SD2136 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    3a npn to126 transistor

    Abstract: 2SD2136
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD2136 NPN SILICON TRANSISTOR POWER TRANSISTOR „ DESCRIPTION The UTC 2SD2136 is designed for power amplification. „ FEATURES * High forward current transfer ratio hFE which has satisfactory linearity. * Low collector to emitter saturation voltage VCE SAT .


    Original     		PDF 2SD2136 2SD2136 2SD2136L-x-T60-K 2SD2136G-x-T60-K 2SD2136L-x-T6C-K 2SD2136G-x-T6C-K O-126 O-126C QW-R204-011 3a npn to126 transistor

    2SB1416

    Abstract: 2SD2136
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2136 Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1416 Unit: mm Collector-emitter voltage (Base open) Emitter-base voltage (Collector open)


    Original     		PDF 2002/95/EC) 2SD2136 2SB1416 2SB1416 2SD2136

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SD2136 TRANSISTOR NPN TO – 126 FEATURES z High Forward Current Transfer Ratio hFE Which has Satisfactory Linearity. z Low Collector-Emitter Saturation Voltage VCE(sat)


    Original     		PDF O-126 2SD2136 10MHz

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2136 Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1416 Unit: mm • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit


    Original     		PDF 2002/95/EC) 2SD2136 2SB1416

    2SB1416

    Abstract: 2SD2136
    Text: Power Transistors 2SD2136 Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1416 Unit: mm • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage Emitter open VCBO 60 V Collector-emitter voltage (Base open)


    Original     		PDF 2SD2136 2SB1416 2SB1416 2SD2136

    2SD2136

    Abstract: No abstract text available
    Text: 2SD2136 3A , 60V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES TO-126 Low frequency power amplifier Low Collector-Emitter Saturation Voltage VCE sat High Forward Current Transfer Ratio hFE Which has


    Original     		PDF 2SD2136 O-126 2SD2136-P 2SD2136-Q 2SD2136-R 375mA 100mA, 10MHz 03-Dec-2013 2SD2136

    IC 4090

    Abstract: 2SD2136
    Text: 2SD2136 2SD2136 TRANSISTOR NPN TO-126C FEATURES Power dissipation PCM: 1.25 W (Tamb=25℃) 1. EMITTER Collector current ICM: 3 A Collector-base voltage 60 V V(BR)CBO: Operating and storage junction temperature range 2. COLLECTOR 3. BASE 123 TJ, Tstg: -55℃ to +150℃


    Original     		PDF 2SD2136 O-126C 375mA 200MHz IC 4090 2SD2136

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SD2136 Silicon NPN triple diffusion planar type Unit: mm For power amplification Complementary to 2SB1416 90˚ 10.8±0.2 • Features 4.5±0.2 3.8±0.2 7.5±0.2 0.85±0.1 1.0±0.1 0.8 C 16.0±1.0 2.5±0.1 0.65±0.1 • High forward current transfer ratio hFE which has satisfactory


    Original     		PDF 2SD2136 2SB1416 100ms

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SB1416 Silicon PNP epitaxial planar type Unit: mm For low-frequency power amplification Complementary to 2SD2136 • Features 4.5±0.2 90˚ 3.8±0.2 10.8±0.2 7.5±0.2 0.85±0.1 1.0±0.1 0.8 C 16.0±1.0 2.5±0.1 0.65±0.1 • High forward current transfer ratio hFE which has satisfactory


    Original     		PDF 2SB1416 2SD2136

    2SB1416

    Abstract: 2SD2136
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1416 Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD2136 Unit: mm 3.8±0.2 10.8±0.2 ue pl d in an c se ed lud pl vi an m m es


    Original     		PDF 2002/95/EC) 2SB1416 2SD2136 2SB1416 2SD2136

    2SB1416

    Abstract: 2SD2136
    Text: Power Transistors 2SB1416 Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD2136 Unit: mm 90˚ 10.8±0.2 0.65±0.1 0.85±0.1 1.0±0.1 0.8 C 2.5±0.1 • High forward current transfer ratio hFE which has satisfactory


    Original     		PDF 2SB1416 2SD2136 2SB1416 2SD2136

    Untitled

    Abstract: No abstract text available
    Text: UNISONICTECHNOLOGIESCO., LTD 2SD2136 NPN SILICON TRANSISTOR POWER T RAN SI ST OR ̈ DESCRI PT I ON The UTC 2SD2136 is designed for power amplification. ̈ FEAT U RES * High forward current transfer ratio hFE which has satisfactory linearity. * Low collector to emitter saturation voltage VCE SAT .


    Original     		PDF 2SD2136 2SD2136 2SD2136L-x-T60-K 2SD2136G-x-T60-K 2SD2136L-x-T6C-K 2SD2136G-x-T6C-K O-126 O-126C QW-R204-011

    2SB1416

    Abstract: 2SD2136
    Text: Power Transistors 2SD2136 Silicon NPN triple diffusion planar type Unit: mm For power amplification Complementary to 2SB1416 90˚ 10.8±0.2 • Features 4.5±0.2 3.8±0.2 7.5±0.2 0.85±0.1 1.0±0.1 0.8 C 16.0±1.0 2.5±0.1 0.65±0.1 • High forward current transfer ratio hFE which has satisfactory


    Original     		PDF 2SD2136 2SB1416 2SB1416 2SD2136

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SD2136 TRANSISTOR NPN TO – 126C FEATURES z High Forward Current Transfer Ratio. z Low Collector-Emitter Saturation Voltage z Allowing Supply with the Radial Taping


    Original     		PDF O-126C 2SD2136 10MHz

    TO 126 FEATURES

    Abstract: IC 4090 2SD2136
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SD2136 TRANSISTOR NPN TO-126 FEATURES Power dissipation PCM: 1.25 W (Tamb=25℃) 1. EMITTER Collector current 3 A ICM: Collector-base voltage 60 V V(BR)CBO: Operating and storage junction temperature range


    Original     		PDF O-126 2SD2136 O-126 375mA 200MHz TO 126 FEATURES IC 4090 2SD2136

    2SD2136

    Abstract: IC 4090
    Text: 2SD2136 2SD2136 TRANSISTOR NPN TO-126 FEATURES Power dissipation PCM: 1.25 W (Tamb=25℃) 1. EMITTER Collector current ICM: 3 A Collector-base voltage 60 V V(BR)CBO: Operating and storage junction temperature range 2. COLLECTOR 3. BASE 123 TJ, Tstg: -55℃ to +150℃


    Original     		PDF 2SD2136 O-126 375mA 200MHz 2SD2136 IC 4090

    2SB1416

    Abstract: 2SD2136
    Text: Power Transistors 2SB1416 Silicon PNP epitaxial planar type Unit: mm For low-frequency power amplification Complementary to 2SD2136 • Features 4.5±0.2 90˚ 3.8±0.2 10.8±0.2 7.5±0.2 0.85±0.1 1.0±0.1 0.8 C 16.0±1.0 2.5±0.1 0.65±0.1 • High forward current transfer ratio hFE which has satisfactory


    Original     		PDF 2SB1416 2SD2136 2SB1416 2SD2136

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1416 Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD2136 Unit: mm 90˚ 10.8±0.2 0.65±0.1 0.85±0.1 1.0±0.1 0.8 C 2.5±0.1 • High forward current transfer ratio hFE which has satisfactory


    Original     		PDF 2002/95/EC) 2SB1416 2SD2136

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD2136 NPN SILICON TRANSISTOR POWER TRANSISTOR  DESCRIPTION The UTC 2SD2136 is designed for power application.  FEATURES * High forward current transfer ratio hFE which has satisfactory linearity. * Low collector to emitter saturation voltage VCE SAT .


    Original     		PDF 2SD2136 2SD2136 2SD2136L-x-T60-K 2SD2136L-x-T6C-K 2SD2136L-x-T6S-K 2SD2136G-x-AA3-R 2SD2136G-x-T60-K 2SD2136G-x-T6C-K 2SD2136G-x-T6S-K OT-223

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2136 Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1416 Unit: mm Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 60 V Collector-emitter voltage (Base open)


    Original     		PDF 2002/95/EC) 2SD2136 2SB1416

    2SB1416

    Abstract: 2SD2136
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1416 Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD2136 Unit: mm 3.8±0.2 10.8±0.2 ue pl d in an c se ed lud pl vi an m m es


    Original     		PDF 2002/95/EC) 2SB1416 2SD2136 2SB1416 2SD2136

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SB1416 2SB1416 Silicon PNP Epitaxial Planar Type Package Dimensions AF Power Amplifier Complementary Pair with 2SD2136 •Features • High DC current gain Iife and good linearity • Low collector-emitter saturation voltage (Vc e m )


    OCR Scan     		PDF 2SB1416 2SD2136 Glh321 52ETE00

    Untitled

    Abstract: No abstract text available
    Text: Power T ransistors 2SD213Ó 2SD2136 Silicon NPN Triple-Diffused Planar Type Package Dim ensions Pow er Amplifier Com plem entary Pair with 2SB1416 • Features • H igh DC c u r re n t gain hFE and good lin earity • L ow c o lle c to r-e m itte r sa tu ra tio n v o ltag e


    OCR Scan     		PDF 2SD213Ã 2SD2136 2SB1416 200MHz bT32flSe

    25814

    Abstract: 2SB141 2SB1416 2SD2136
    Text: Power Transistors 2SB141Ó 2SB1416 Silicon PNP Epitaxial Planar Type • Package Dim ensions A F Pow er Amplifier Com plem entary Pair with 2SD2136 ■ Features • H igh D C c u r re n t gain Iife and good lin earity • L o w c o lle c to r-e m itte r s a tu ra tio n v o ltag e (VcEtaau)


    OCR Scan     		PDF 2SB141Ã 2SB1416 2SD2136 -20mA 25814 2SB141 2SB1416 2SD2136