Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1063 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD1499 4.2±0.2 M Di ain sc te on na tin nc ue e/ d Parameter Symbol Rating Unit
|
Original
|
2002/95/EC)
2SB1063
2SD1499
|
PDF
|
2SB1063
Abstract: 2SD1499
Text: Power Transistors 2SB1063 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD1499 5.5±0.2 2.7±0.2 Parameter Symbol Rating Unit Collector-base voltage Emitter open VCBO −100 V Collector-emitter voltage (Base open)
|
Original
|
2SB1063
2SD1499
2SB1063
2SD1499
|
PDF
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1499 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1063 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open)
|
Original
|
2002/95/EC)
2SD1499
2SB1063
|
PDF
|
2SB1063
Abstract: 2SD1499
Text: SavantIC Semiconductor Product Specification 2SB1063 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·Complement to type 2SD1499 ·Wide area of safe operation ·High fT APPLICATIONS ·For high power amplifier applications PINNING PIN DESCRIPTION
|
Original
|
2SB1063
O-220Fa
2SD1499
-100V;
-20mA
2SB1063
2SD1499
|
PDF
|
2SB1063
Abstract: 2SD1499
Text: Power Transistors 2SB1063 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD1499 Parameter Symbol Rating Unit Collector-base voltage Emitter open VCBO −100 V Collector-emitter voltage (Base open) VCEO −100 V Emitter-base voltage (Collector open)
|
Original
|
2SB1063
2SD1499
2SB1063
2SD1499
|
PDF
|
2SB1063
Abstract: 2SD1499
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1063 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -2.0V(Max)@IC= -3A ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SD1499 APPLICATIONS
|
Original
|
2SB1063
2SD1499
-100V;
-20mA;
2SB1063
2SD1499
|
PDF
|
2SB1063
Abstract: 2SD1499
Text: Power Transistors 2SD1499 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1063 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage Emitter open VCBO 100 V Collector-emitter voltage (Base open)
|
Original
|
2SD1499
2SB1063
2SB1063
2SD1499
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2SD1499 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)5 Absolute Max. Power Diss. (W)2 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50u @V(CBO) (V) (Test Condition)100 V(CE)sat Max. (V)2.0 @I(C) (A) (Test Condition)3
|
Original
|
2SD1499
Freq20MÃ
|
PDF
|
2SB1063
Abstract: 2SD1499
Text: Power Transistors 2SD1499 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1063 Unit: mm ● 0.7±0.1 • Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 100 V Collector to emitter voltage
|
Original
|
2SD1499
2SB1063
2SB1063
2SD1499
|
PDF
|
2SD1499
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors 2SD1499 TRANSISTOR NPN TO-220F FEATURES z Extremely satisfactory linearity of the forward current transfer ratio hFE z Wide safe operation area z High transition frequency fT
|
Original
|
O-220F
2SD1499
O-220F
2SD1499
|
PDF
|
2SB1063
Abstract: 2SD1499
Text: JMnic Product Specification 2SB1063 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Complement to type 2SD1499 ・Wide area of safe operation ・High fT APPLICATIONS ・For high power amplifier applications PINNING PIN DESCRIPTION
|
Original
|
2SB1063
O-220Fa
2SD1499
-100V;
-20mA
2SB1063
2SD1499
|
PDF
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1499 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1063 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open)
|
Original
|
2002/95/EC)
2SD1499
2SB1063
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2SD1499 NPN TO-220F Bipolar Transistors TO-220F 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features Extremely satisfactory linearity of the forward current transfer ratio hFE Wide safe operation area High transition frequency fT Full-pack package which can be installed to the heat sink with
|
Original
|
2SD1499
O-220F
O-220F
-55to
|
PDF
|
2SD1499
Abstract: 2SB1063
Text: Inchange Semiconductor Product Specification 2SD1499 Silicon NPN Power Transistors • DESCRIPTION ·With TO-220Fa package ·High transition frequency ·Complement to type 2SB1063 ·Wide area of safe operation APPLICATIONS ·For high power amplifier applications
|
Original
|
2SD1499
O-220Fa
2SB1063
O-220Fa)
2SD1499
2SB1063
|
PDF
|
|
|
2SD1499
Abstract: 2SB1063
Text: SavantIC Semiconductor Product Specification 2SD1499 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·High transition frequency ·Complement to type 2SB1063 ·Wide area of safe operation · APPLICATIONS ·For high power amplifier applications
|
Original
|
2SD1499
O-220Fa
2SB1063
O-220Fa)
2SD1499
2SB1063
|
PDF
|
2SB1063
Abstract: 2SD1499
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1499 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1063 4.2±0.2 M Di ain sc te on na tin nc ue e/ d Parameter Collector-emitter voltage (Base open)
|
Original
|
2002/95/EC)
2SD1499
2SB1063
SC-67
O-220F-A1
2SB1063
2SD1499
|
PDF
|
2SB1063
Abstract: 2SD1499
Text: Inchange Semiconductor Product Specification 2SB1063 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Complement to type 2SD1499 ・Wide area of safe operation ・High fT APPLICATIONS ・For high power amplifier applications PINNING
|
Original
|
2SB1063
O-220Fa
2SD1499
-20mA
2SB1063
2SD1499
|
PDF
|
2SB1063
Abstract: 2SD1499
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1499 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1063 4.2±0.2 M Di ain sc te on na tin nc ue e/ d Parameter Collector-emitter voltage (Base open)
|
Original
|
2002/95/EC)
2SD1499
2SB1063
SC-67
O-220F-A1
2SB1063
2SD1499
|
PDF
|
2SB1063
Abstract: 2SD1499
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1063 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD1499 4.2±0.2 M Di ain sc te on na tin nc ue e/ d Collector-base voltage (Emitter open)
|
Original
|
2002/95/EC)
2SB1063
2SD1499
SC-67
O-220F-A1
2SB1063
2SD1499
|
PDF
|
2SB1063
Abstract: 2SD1499
Text: Power Transistors 2SD1499 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1063 Unit: mm ● 0.7±0.1 • Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 100 V Collector to emitter voltage
|
Original
|
2SD1499
2SB1063
2SB1063
2SD1499
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Power Transistors 2SD1499 2SD1499 Silicon PNP Triple-Diffused Planar Darlington Type High Power A m p lifier C om plem entary Pair w ith 2SB1063 • Package D im ensions U nit I mm 4 .4 m a x . 1 0 .2m ax. 5 .7 m a x . ■ Features 2.9max • V e r y g o o d lin e a rity o f D C c u r r e n t gain h HE
|
OCR Scan
|
2SD1499
2SB1063
GGlfci742
2sdi499
|
PDF
|
2SD1491
Abstract: 2SD1510 TO-22OAB0 2SD1533 2SD1494 2SD1496 2SD1497 2SD1499 2SD1500 2SD1502
Text: - 252 - M % Ta=25t ,*Ep(äTc=25t;) m fr Vr. Ä Vi"BO V q EO IcCDC) (V) (V) (A) Pc. Pc* CW) (W) 2SD1497 am B iL B iL B iL 2SD1499 föT PA PSW 150 100 10 LF PA/LS PSW 300 300 0.3 1.5 2SD1504 B% B aL LF A/Mut 30 15 0.5 0.3 2SD1505 D —A LF PA 60 50 2SD1506
|
OCR Scan
|
2SD1491
2SD1494
2SD1496
2SD1497
2SD1499
2SD1500
2SD1502
2-21F1A)
2SD1525
2SD1526
2SD1510
TO-22OAB0
2SD1533
2SD1500
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Power Transistors 2SB1063 2SB1063 Silicon PNP Planar Type Package Dimensions High Power Amplifier Complementary Pair with 2SD1499 • Features • V ery good linearity of DC current gain Ii f e • Wide area of safety operation (ASO) • High transition frequency (ft)
|
OCR Scan
|
2SB1063
2SD1499
13SaS2
|
PDF
|
OF IC 741
Abstract: 741p operation of ic 741 of 741 ic uA 741 IC IC 741 IC ua 74 IC 741 to high current Darlington pair IC 2SB1063
Text: Power Transistors 2SD1499 2S D 1499 Silicon PNP Triple-Diffused Planar Darlington Type High Power A m plifier C om plem entary Pair w ith 2SB1063 • Package D im ensions U n it I mm 4.4m ax. 1 0 .2 m a x . ■ Features 2.9m ax • V ery goo d lin earity o f DC c u r re n t gain hhE
|
OCR Scan
|
2SD1499
2SB1063
001b743
OF IC 741
741p
operation of ic 741
of 741 ic
uA 741 IC
IC 741
IC ua 74
IC 741 to
high current Darlington pair IC
2SB1063
|
PDF
|
