Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type Product specification 2SD1220 TO-252 6.50 +0.2 5.30-0.2 +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 Features 2.3 +0.1 0.60-0.1 3 .8 0 +0.15 5.55 -0.15 +0.25 2.65 -0.1 0.127 max +0.28 1.50 -0.1 +0.1 0.80-0.1 +0.15
|
Original
|
PDF
|
2SD1220
O-252
D1220
|
D1220
Abstract: 2sd1220 2SB905
Text: 2SD1220 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SD1220 Power Amplifier Applications • Unit: mm Complementary to 2SB905 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 150 V Collector-emitter voltage
|
Original
|
PDF
|
2SD1220
2SB905
D1220
2sd1220
2SB905
|
D1220
Abstract: 2sd1220 2SB905
Text: 2SD1220 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SD1220 Power Amplifier Applications • Unit: mm Complementary to 2SB905 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 150 V Collector-emitter voltage
|
Original
|
PDF
|
2SD1220
2SB905
D1220
2sd1220
2SB905
|
Untitled
Abstract: No abstract text available
Text: 2SD1220 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SD1220 Power Amplifier Applications • Unit: mm Complementary to 2SB905 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 150 V Collector-emitter voltage
|
Original
|
PDF
|
2SD1220
2SB905
|
D1220
Abstract: 2SB905 2SD1220
Text: 2SD1220 東芝トランジスタ シリコンNPN三重拡散形 PCT方式 2SD1220 ○ 電力増幅用 • 単位: mm 2SB905 とコンプリメンタリになります。 絶対最大定格 (Ta = 25°C) 項 目 記 号 定 格 単位 コ レ ク タ • ベ ー ス 間 電 圧
|
Original
|
PDF
|
2SD1220
2SB905
D1220
2SB905
2SD1220
|
2SD1220
Abstract: D1220 2SB905
Text: 2SD1220 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SD1220 Power Amplifier Applications • Unit: mm Complementary to 2SB905 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 150 V Collector-emitter voltage
|
Original
|
PDF
|
2SD1220
2SB905
2SD1220
D1220
2SB905
|
2SB905
Abstract: B905 2SD1220
Text: 2SB905 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SB905 ○ 電力増幅用 • 単位: mm 2SD1220 とコンプリメンタリになります。 絶対最大定格 (Ta = 25°C) 項 目 記 号 定 格 単位 コ レ ク タ • ベ ー ス 間 電 圧
|
Original
|
PDF
|
2SB905
2SD1220
20070701-JA
2SB905
B905
2SD1220
|
D1220
Abstract: D122 2sd1220
Text: Transistors SMD Type Silicon NPN Epitaxial Transistor 2SD1220 TO-252 6.50 +0.2 5.30-0.2 +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 Features 2.3 +0.1 0.60-0.1 3 .8 0 +0.15 5.55 -0.15 +0.25 2.65 -0.1 0.127 max +0.28 1.50 -0.1 +0.1 0.80-0.1
|
Original
|
PDF
|
2SD1220
O-252
D1220
D1220
D122
2sd1220
|
D1220
Abstract: 2sd1220 2SB905
Text: 2SD1220 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SD1220 Power Amplifier Applications • Unit: mm Complementary to 2SB905 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 150 V Collector-emitter voltage
|
Original
|
PDF
|
2SD1220
2SB905
D1220
2sd1220
2SB905
|
D1220
Abstract: 2SD1220 2SB905
Text: 2SD1220 東芝トランジスタ シリコンNPN三重拡散形 PCT方式 2SD1220 ○ 電力増幅用 • 単位: mm 2SB905 とコンプリメンタリになります。 絶対最大定格 (Ta = 25°C) 項 目 記 号 定 格 単位 コ レ ク タ • ベ ー ス 間 電 圧
|
Original
|
PDF
|
2SD1220
2SB905
20070701-JA
D1220
2SD1220
2SB905
|
2sd1220
Abstract: 2SB905
Text: 2SD1220 TO SH IBA TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • SILICON NPN EPITAXIAL TYPE PCT PROCESS 2 S D 1 220 Complementary to 2SB905 MAXIMUM RATINGS (Tc = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage v CBO Colleetor-Emitter Voltage v CEO
|
OCR Scan
|
PDF
|
2SD1220
2SB905
2sd1220
|
2SB905
Abstract: 2SD1220
Text: TO SH IBA 2SB905 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SB905 Complementary to 2SD1220 MAXIMUM RATINGS (Tc = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage v CBO Colleetor-Emitter Voltage v CEO Emitter-Base Voltage
|
OCR Scan
|
PDF
|
2SB905
2SD1220
2SB905
2SD1220
|
2SD1220
Abstract: No abstract text available
Text: 2SD1220- SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS POWER AMPLIFIER APPLICATIONS. Unit in mm . 6 8 MAX, FEATURES: CL6 MAX . . Complementary to 2SB905 Û8MAX. MAXIMUM RATINGS (Ta=25üC) SYMBOL CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage
|
OCR Scan
|
PDF
|
2SD1220-
2SB905
200mA
2SD1220
2SD1220
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SD1220 2 S D 1 220 T O SH IB A TRA N SISTO R PO W ER AM PLIFIER APPLICATIO NS • SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm Complementary to 2SB905 M A X IM U M RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage VCBO Collector-Emitter Voltage
|
OCR Scan
|
PDF
|
2SD1220
2SB905
|
|
|
2SB905
Abstract: 2SD1220
Text: TOSHIBA 2SB905 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SB905 Complementary to 2SD1220 MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage v CBO Colleetor-Emitter Voltage v CEO Emitter-Base Voltage
|
OCR Scan
|
PDF
|
2SB905
2SD1220
2SB905
|
2sd1220
Abstract: 2SB905
Text: 2SD1220 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2 S D 1 220 PO W ER AM PLIFIER APPLICATIONS • Complementary to 2SB905 M A X IM U M RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage v CBO Colleetor-Emitter Voltage
|
OCR Scan
|
PDF
|
2SD1220
2SB905
2sd1220
|
2SB905
Abstract: 2SD1220
Text: TO SH IBA 2SB905 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SB905 Complementary to 2SD1220 MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage v CBO Colleetor-Emitter Voltage v CEO Emitter-Base Voltage
|
OCR Scan
|
PDF
|
2SB905
2SD1220
2SB905
|
2sd1220
Abstract: 2SB905
Text: 2SD1220 TO SH IBA TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • SILICON NPN EPITAXIAL TYPE PCT PROCESS 2 S D 1 220 Complementary to 2SB905 MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage v CBO Colleetor-Emitter Voltage v CEO
|
OCR Scan
|
PDF
|
2SD1220
2SB905
2sd1220
|
U2550
Abstract: 2sd122
Text: TOSHIBA 2SD1220 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2 SD12 2 0 POWER AMPLIFIER APPLICATIONS. U nit in mm ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL Collector Cut-off Current !CBO E m itter Cut-off Current ÏEBO Collector-Emitter Breakdown
|
OCR Scan
|
PDF
|
2SD1220
200mA
500mA,
U2550
2sd122
|
2SB905
Abstract: No abstract text available
Text: SILICON PNP EPITAXIAL TYPE 2SB905 POWER AMPLIFIER APPLICATION. Unit in mm FEATURES : Cl6 MAX. . Complementary to 2SD1220 MAXIMUM RATINGS Ta=25 C CHARACTERISTIC SYMBOL Collector-Base Voltage RATING UNIT vCBO -150 V Collector-Emitter Voltage VcEO -150 V Emitter-Base Voltage
|
OCR Scan
|
PDF
|
2SB905
2SD1220
-10mA,
-200mA
-500mA,
-50mA
2SB905
|
Untitled
Abstract: No abstract text available
Text: 2SD1220 SILICON NPN EPITAXIAL TYPE POWER AMPLIFIER APPLICATIONS. Unit in mm 6.8MAX. FEATURES : . Complementary to 2SB905 n asíais MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 150 Collector-Emitter Voltage VCEO 150
|
OCR Scan
|
PDF
|
2SD1220
2SB905
200mA
|
Untitled
Abstract: No abstract text available
Text: SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS -2SB905 Unit in mm PO W ER AM PLIFIER APPLICATIONS. • Complementary to 2SD1220 M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage
|
OCR Scan
|
PDF
|
-2SB905
2SD1220
2SB905
|
Untitled
Abstract: No abstract text available
Text: 2SD1220 TOSHIBA 2 S D 1 220 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS • SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm Complementary to 2SB905 M A X IM U M RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage VCBO Collector-Emitter Voltage
|
OCR Scan
|
PDF
|
2SD1220
2SB905
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SB905 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SB905 Complementary to 2SD1220 MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage
|
OCR Scan
|
PDF
|
2SB905
2SD1220
|
