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    2SD1119 Search Results

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    2SD1119 Price and Stock

    Panasonic Electronic Components 2SD11190RL

    TRANS NPN 25V 3A MINIP3-F1
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    DigiKey 2SD11190RL Reel
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    Panasonic Electronic Components 2SD1119-R(TX)

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    Bristol Electronics 2SD1119-R(TX) 1,248
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    ROHM Semiconductor 2SD1119GQL

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    Quest Components 2SD1119GQL 5,610
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    SANYO Semiconductor Co Ltd 2SD1119-R(TX)

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    Quest Components 2SD1119-R(TX) 648
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    Panasonic Electronic Components 2SD1119R

    3000 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR
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    Quest Components 2SD1119R 247
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    Find more 2SD1119 price and stock on Findchips.com

    2SD1119 Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SD1119 Kexin Silicon NPN epitaxial planar type Original PDF
    2SD1119 Panasonic Silicon NPN epitaxial planer type Original PDF
    2SD1119 Panasonic NPN Transistor Original PDF
    2SD1119 Panasonic Silicon NPN epitaxial planer type Original PDF
    2SD1119 TY Semiconductor Silicon NPN epitaxial planar type - SOT-89 Original PDF
    2SD1119 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SD1119 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD1119 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD1119 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD1119 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD1119 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SD11190RL Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 25VCEO 3A MINI-PWR Original PDF
    2SD1119GRL Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 25VCEO 3A MINIP-3 Original PDF
    2SD1119TQ Panasonic Silicon NPN Epitaxial Planar Type Transistor Original PDF
    2SD1119TR Panasonic Silicon NPN Epitaxial Planar Type Transistor Original PDF

    2SD1119 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    vebo

    Abstract: 2SD1119
    Text: Transistors SMD Type Silicon NPN epitaxial planar type 2SD1119 Features Low collector-emitter saturation voltage VCE sat . Satisfactory operation performances at high efficiency with the lowvoltage power supply. Absolute Maximum Ratings Ta = 25 Parameter Symbol


    Original     		PDF 2SD1119 vebo 2SD1119

    marking TQ

    Abstract: 2SD1119 marking 3A sot-89
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SD1119 SOT-89 TRANSISTOR NPN 1. BASE FEATURES z Low collector-emitter saturation voltage VCE(sat) z Satisfactory operation performances at high efficiency with the low


    Original     		PDF OT-89 2SD1119 OT-89 500mA 200MHz marking TQ 2SD1119 marking 3A sot-89

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SD1119 SOT-89-3L TRANSISTOR NPN 1. BASE FEATURES z Low collector-emitter saturation voltage VCE(sat) z Satisfactory operation performances at high efficiency with the low


    Original     		PDF OT-89-3L 2SD1119 OT-89-3L 500mA 200MHz

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1119 Silicon NPN epitaxial planar type For low-frequency power amplification Unit: mm 4.5±0.1 1.6±0.2 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2 1 0.4±0.08 3˚ 4.0+0.25 –0.20 • Low collector-emitter saturation voltage VCE(sat)


    Original     		PDF 2002/95/EC) 2SD1119

    2SD1119

    Abstract: No abstract text available
    Text: Transistor 2SD1119 Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm 2.5±0.1 +0.25 0.4max. 0.4±0.08 4.0–0.20 45° +0.1 ● Low collector to emitter saturation voltage VCE sat . Satisfactory operation performances at high efficiency with the


    Original     		PDF 2SD1119 2SD1119

    2SD1119

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1119 Silicon NPN epitaxial planar type For low-frequency power amplification Unit: mm 4.5±0.1 3 2 0.5±0.08 1.5±0.1 2.5±0.1 1.0+0.1 –0.2 1 0.4±0.08 3˚ ue pl d in an c se ed lud


    Original     		PDF 2002/95/EC) 2SD1119 2SD1119

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification 2SD1119 Features Low collector-emitter saturation voltage VCE sat . Satisfactory operation performances at high efficiency with the lowvoltage power supply. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating


    Original     		PDF 2SD1119

    2SD1119

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1119 Silicon NPN epitaxial planar type For low-frequency power amplification Unit: mm 4.5±0.1 1.6±0.2 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2 1 0.4±0.08 3˚ M Di ain sc te on na


    Original     		PDF 2002/95/EC) 2SD1119 2SD1119

    2SD1119G

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1119G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For low-frequency power amplification • Package • Low collector-emitter saturation voltage VCE(sat)


    Original     		PDF 2002/95/EC) 2SD1119G 2SD1119G

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1119G Silicon NPN epitaxial planar type For low-frequency power amplification • Features ■ Package • Low collector-emitter saturation voltage VCE(sat) • Satisfactory operation performances at high efficiency with the lowvoltage power supply.


    Original     		PDF 2002/95/EC) 2SD1119G

    2SD1119

    Abstract: 5021H
    Text: Transistor 2SD1119 Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm 2.5±0.1 +0.25 0.4max. 0.4±0.08 4.0–0.20 45° +0.1 ● Low collector to emitter saturation voltage VCE sat . Satisfactory operation performances at high efficiency with the


    Original     		PDF 2SD1119 2SD1119 5021H

    2SD1119

    Abstract: No abstract text available
    Text: Transistor 2SD1119 Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm 4.5±0.1 1 2 0.5±0.08 3 0.4±0.08 1.5±0.1 3° * Ta=25˚C Symbol Ratings Unit Collector to base voltage VCBO 40 V Collector to emitter voltage VCEO 25 V


    Original     		PDF 2SD1119 2SD1119

    UN801

    Abstract: No abstract text available
    Text: Composite Transistors UN801 Silicon PNP epitaxial planer transistor Silicon NPN epitaxial planer transistor Unit: mm For camera UN1119+2SD1119 ● 6 2 5 3 4 0.25±0.1 • Basic Part Number of Element 1 0.6±0.1 ■ Absolute Maximum Ratings Parameter P N P


    Original     		PDF UN801 UN1119 2SD1119 100mA* 200MHz UN801

    2SD1119

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1119 Silicon NPN epitaxial planar type For low-frequency power amplification Unit: mm 4.5±0.1 1.6±0.2 • Features 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2 1 0.4±0.08 3˚ M Di ain


    Original     		PDF 2002/95/EC) 2SD1119 2SD1119

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1119G Silicon NPN epitaxial planar type For low-frequency power amplification • Package • Low collector-emitter saturation voltage VCE(sat) • Satisfactory operation performances at high efficiency with the lowvoltage power supply.


    Original     		PDF 2002/95/EC) 2SD1119G

    2SD1119G

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1119G Silicon NPN epitaxial planar type For low-frequency power amplification • Package • Low collector-emitter saturation voltage VCE(sat) • Satisfactory operation performances at high efficiency with the lowvoltage power supply.


    Original     		PDF 2002/95/EC) 2SD1119G 2SD1119G

    2SD1119

    Abstract: marking 3a SOT89 marking 3A sot-89 SOT-89 marking 230
    Text: 2SD1119 SOT-89 Transistor NPN 1. BASE SOT-89 2. COLLECTOR 1 2 3 4.6 4.4 1.8 1.4 1.6 1.4 3. EMITTER B Features 2.6 4.25 2.4 3.75 — Low collector-emitter saturation voltage VCE(sat) — Satisfactory operation performances at high efficiency with the low 0.8


    Original     		PDF 2SD1119 OT-89 OT-89 200MHz 500mA 2SD1119 marking 3a SOT89 marking 3A sot-89 SOT-89 marking 230

    2SD1119

    Abstract: No abstract text available
    Text: Transistors 2SD1119 Silicon NPN epitaxial planar type For low-frequency power amplification Unit: mm 4.5±0.1 1.6±0.2 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2 1 0.4±0.08 3˚ 4.0+0.25 –0.20 • Low collector-emitter saturation voltage VCE sat • Satisfactory operation performances at high efficiency with the lowvoltage power supply.


    Original     		PDF 2SD1119 2SD1119

    2SD1119

    Abstract: UN1119 UN801
    Text: Composite Transistors UN801 Silicon PNP epitaxial planer transistor Silicon NPN epitaxial planer transistor Unit: mm M Di ain sc te on na tin nc ue e/ d For camera UN1119+2SD1119 ● 2 5 3 4 0.6±0.1 • Absolute Maximum Ratings Parameter Unit Collector to base voltage


    Original     		PDF UN801 UN1119 2SD1119 2SD1119 UN801

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1119 Silicon NPN epitaxial planar type For low-frequency power amplification Unit: mm 4.5±0.1 1.6±0.2 2.5±0.1 0.4±0.04 di p Pl lan nclu ea e se pla m d m des ne ain ain foll


    Original     		PDF 2002/95/EC) 2SD1119

    MIP2F3

    Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


    Original     		PDF PAMP13-N1 MIP2F3 MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent

    ma3df25

    Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
    Text: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF respons39 O-220D-A1 MA26P02 MAZ3082J 2SC5779 MA26P07 MAZ3091 2SC5829 MA27E020G ma3df25 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    D1647

    Abstract: sd 1651 2SD1651 2SD1834 2SD1930 2SC3439 2SC3616 d1651 2SD689 2SD1645
    Text: - 246 - £ m *t % Marmi. T ype No. 2SD 1621 ^ H n e SANYO * M £ T O SHIBA □ P 'Ss m. NEC 2SD1898 2SC4357 2SC4672 2SD2403 2SD1119 2SC3438 2SD1834 ¥ 2SC2873 2SD 1624 / ¥ 2SC4541 2SD 1625 $ ^ 2SD 1631 2SD 1632 2SD 1633 ^ 2SD 1634 2SD 1636 2S0 1637 2SD1368


    OCR Scan     		PDF 2SD1621 2SD1622 2SD1623 2SD1624 2SD1625 2SD1626 2SD1627 2SD1628 2SD1629 2SD1630 D1647 sd 1651 2SD1651 2SD1834 2SD1930 2SC3439 2SC3616 d1651 2SD689 2SD1645