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    2SC6026CT Price and Stock

    Toshiba America Electronic Components 2SC6026CT-GR,L3F

    TRANS NPN 50V 0.1A CST3
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    2SC6026CT-GR,L3F Cut Tape 2,900 1
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    2SC6026CT-GR,L3F Digi-Reel 1
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    Toshiba America Electronic Components 2SC6026CT-Y(TPL3)

    TRANS NPN 50V 0.1A CST3
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    2SC6026CT-Y(TPL3) Cut Tape 1
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    2SC6026CT-Y(TPL3) Reel 10,000
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    Toshiba America Electronic Components 2SC6026CT-GR,L3F(T

    2SC6026CT-GR,L3F(T
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    Verical 2SC6026CT-GR,L3F(T 9,950 388
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    Newark 2SC6026CT-GR,L3F(T Cut Tape 10,000 5
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    Chip1Stop 2SC6026CT-GR,L3F(T Cut Tape 9,950
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    2SC6026CT Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SC6026CT Toshiba Japanese - Transistors Original PDF
    2SC6026CT Toshiba Transistors Original PDF
    2SC6026CT-GR,L3F Toshiba America Electronic Components TRANS NPN 50V 0.1A CST3 Original PDF
    2SC6026CTGRTPL3 Toshiba Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 50V 100MA FSM Original PDF
    2SC6026CT-Y(TPL3) Toshiba Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 50V 100MA FSM Original PDF

    2SC6026CT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA Semiconductor Company | Data Sheet Search | Product Details Page 1 of 1 Products Search Product Search: Enter a Part Number or Description Category Top | Refine Search | Results | Product Details Part Number: 2SC6026CT Category: Transistors /Bipolar Small-Signal Transistors/General Purpose Transistors Single


    Original     		PDF 2SC6026CT C6026CT 2SA2154CT 2SC6026CT 16-Apr-09

    2SC6026CT

    Abstract: 2SA2154CT
    Text: 2SC6026CT シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC6026CT ○ 低周波増幅用 ○ 低周波低雑音用 ○ AM 増幅用 単位: mm 0.6±0.05 高耐圧です。 • コレクタ電流が大きい。: IC = 100 mA (最大)


    Original     		PDF 2SC6026CT 2SA2154CT 2SC6026CT 2SA2154CT

    Untitled

    Abstract: No abstract text available
    Text: 2SC6026CT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC6026CT General Purpose Amplifier Applications • Unit: mm High voltage and high current 0.6±0.05 0.5±0.03 Complementary to 2SA2154CT ３ ２ 0.25±0.03 １ Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SC6026CT 2SA2154CT

    2SC6026CT

    Abstract: 2SA21 2SA2154CT
    Text: 2SC6026CT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC6026CT General Purpose Amplifier Applications • Unit: mm High voltage and high current 0.6±0.05 0.5±0.03 Complementary to 2SA2154CT ３ ２ 0.25±0.03 １ Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SC6026CT 2SA2154CT 2SC6026CT 2SA21 2SA2154CT

    Untitled

    Abstract: No abstract text available
    Text: Reliability Tests Report Product Name: 2SC6026CT Package Name: CST3 1. Thermal tests Test Item Heat resistance Reflow Temperature cycling - - Test Condition Peak : 260 deg.C(a moment) Reflow zone : 230 deg.C 30 to 50 s Preheat : 180 to 190 deg.C , 60 to 120 s


    Original     		PDF 2SC6026CT

    TAH6N201U

    Abstract: TAH8N401K 1SS361CT 1SS387CT 1SS417CT TPD4113K MT3S106
    Text: C O N T E N T S 東芝半導体情報誌アイ 2005年2月号 2 今月の新製品情報 VOLUME 151 1チップインバータIC .2 2ビット 2電源片方向レベルシフタIC .2 Lead Frame Chip Scale Package.3


    Original     		PDF TPD4113K/TPD4113AK TPD4113K) 00V/1A TPD4113K 5HZIP23 TAH8N401K TAH6N201U 025mA TAH6N201U TAH8N401K 1SS361CT 1SS387CT 1SS417CT TPD4113K MT3S106

    2SA2154CT

    Abstract: TOSHIBA CATALOG npn catalog 2SC6026CT npn general purpose transistors application NPN/PNP transistor TCS10SPU toshiba semiconductor catalog 1SS361CT toshiba transistors catalog
    Text: There is a correction to the catalog entitled General-Purpose Small-Signal Surface-Mount Devices. • General-Purpose Small-Signal Surface-Mount Devices ■ Document ID: BCE0030D ■ Published: 2008-3 P.32 4.1 Switching Diodes Incorrect Part Number Package


    Original     		PDF BCE0030D 1SS361CT TCS10SPU TLCS11DLU TCS11DLU 2SA2154CT TOSHIBA CATALOG npn catalog 2SC6026CT npn general purpose transistors application NPN/PNP transistor TCS10SPU toshiba semiconductor catalog 1SS361CT toshiba transistors catalog

    lm2804

    Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
    Text: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.


    Original     		PDF BCE0030C S-167 BCE0030D lm2804 marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983

    SSM3J307T

    Abstract: SSM3J328R SSM3J334R
    Text: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g


    Original     		PDF 200-mA BCE0030D SSM3J307T SSM3J328R SSM3J334R

    Untitled

    Abstract: No abstract text available
    Text: 2SA2154CT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA2154CT General Purpose Amplifier Applications • High voltage and high current : VCEO = −50V, IC = −100mA (max) • Excellent hFE linearity : hFE (IC = −0.1 mA) / hFE (IC = −2 mA)= 0.95 (typ.)


    Original     		PDF 2SA2154CT 100mA 2SC6026CT

    Untitled

    Abstract: No abstract text available
    Text: 2SA2154CT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA2154CT General Purpose Amplifier Applications • High voltage and high current : VCEO = −50V, IC = −100mA (max) • Excellent hFE linearity : hFE (IC = −0.1 mA) / hFE (IC = −2 mA)= 0.95 (typ.)


    Original     		PDF 2SA2154CT 100mA 2SC6026CT

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075

    Untitled

    Abstract: No abstract text available
    Text: 2SA2154CT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA2154CT General Purpose Amplifier Applications • High voltage and high current : VCEO = −50V, IC = −100mA (max) • Excellent hFE linearity : hFE (IC = −0.1 mA) / hFE (IC = −2 mA)= 0.95 (typ.)


    Original     		PDF 2SA2154CT 100mA 2SC6026CT

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


    Original     		PDF SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122

    Untitled

    Abstract: No abstract text available
    Text: Issue Number | 001 June 2011 New Product Announcement BJT in DFN1006 Bipolars in Super-Small-Size DFN1006 Package Save Space Diodes Incorporated has extended its family of small-signal Bipolar transistors in the tiny DFN package, measuring only 1 x 0.6mm, yet delivering


    Original     		PDF DFN1006 DFN1006 DSS2515M DSS3515M DSS2540M DSS3540M DN0150ALP4 DP0150ALP4 BC847BLP4

    2SA2154CT

    Abstract: 2SC6026CT
    Text: 2SA2154CT 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA2154CT ○ 低周波増幅用 単位: mm 0.6±0.05 • 高耐圧です。 • コレクタ電流が大きい。: IC = −100 mA (最大) • 電流増幅率が高い。


    Original     		PDF 2SA2154CT 2SC6026CT 2SA2154CT 2SC6026CT

    TPCA*8030

    Abstract: lm2804 TPCA*8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558
    Text: 製品カタログ 2009-9 東芝半導体 製品カタログ 汎用小信号面実装対応素子 （トランジスタダイオード、セルパック） SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S


    Original     		PDF TC7SZ126FU SC-88A OT-353 BCJ0052E BCJ0052D TPCA*8030 lm2804 TPCA*8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558

    MT3S106

    Abstract: 1SS417CT TAH8 TAH8N401K 2SA2154CT 1SS361CT 1SS387CT TPD4113AK TPD4113K sine wave Control IC
    Text: C O N T E N T S New Products TOSHIBA SEMICONDUCTOR BULLETIN EYE FEBRUARY 2005 2 VOLUME 151 Single-chip Inverter ICs .2 2-bit Dual Supply Unidirectional Level Shifter ICs .2 Lead-Frame-Chip-Scale-Package .3


    Original     		PDF TPD4113K/TPD4113AK TPD4113K HZIP23 MT3S106 1SS417CT TAH8 TAH8N401K 2SA2154CT 1SS361CT 1SS387CT TPD4113AK sine wave Control IC

    GT45F122

    Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124
    Text: 東芝半導体製品総覧表 2009 年 7 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004O SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 GT45F122 TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124

    GT30J124

    Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF SCE0004I SC-43) 2SC1815 GT30J124 smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram

    *45F122

    Abstract: GT30f124 *30g122 *30f124 IGBT GT30F124 GT30J124 GT45F122 GT30F123 TPCA*8023 GT50N322
    Text: 東芝半導体製品総覧表 2010 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004O SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 *45F122 GT30f124 *30g122 *30f124 IGBT GT30F124 GT30J124 GT45F122 GT30F123 TPCA*8023 GT50N322

    2SA21

    Abstract: 2SA2154CT 2SC6026CT
    Text: 2SA2154CT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA2154CT General Purpose Amplifier Applications • High voltage and high current : VCEO = −50V, IC = −100mA (max) • Excellent hFE linearity : hFE (IC = −0.1 mA) / hFE (IC = −2 mA)= 0.95 (typ.)


    Original     		PDF 2SA2154CT -100mA 2SC6026CT 2SA21 2SA2154CT 2SC6026CT