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Abstract: No abstract text available
Text: 2SC5945 Si NPN Epitaxial High Frequency Medium Power Amplifier REJ03G0443-0200 Rev.2.00 Jan 27, 2006 Features • Excellent Linearity P1dB at output = +26 dBm typ. f = 2.4 GHz • High Collector to Emitter Voltage VCEO = 5 V • Ideal for 2 GHz Band applications. e.g 2.4 GHz WLAN, Digital cordless phone.
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2SC5945
REJ03G0443-0200
PWSN0006JA-A
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ZO 607 MA
Abstract: 149-5 zo 607 150-1 2SC5945
Text: 2SC5945 Si NPN Epitaxial High Frequency Medium Power Amplifier REJ03G0443-0100 Rev.1.00 Oct.28.2004 Features • Excellent Linearity P1dB at output = +26 dBm typ. f = 2.4 GHz • High Collector to Emitter Voltage VCEO = 5 V • Ideal for 2 GHz Band applications. e.g 2.4 GHz WLAN, Digital cordless phone.
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2SC5945
REJ03G0443-0100
WSON0202-6V
Unit2607
ZO 607 MA
149-5
zo 607
150-1
2SC5945
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Untitled
Abstract: No abstract text available
Text: 2SC5945 Si NPN Epitaxial High Frequency Medium Power Amplifier REJ03G0443-0300 Rev.3.00 Aug 03, 2006 Features • Excellent Linearity P1dB at output = +26 dBm typ. f = 2.4 GHz • High Collector to Emitter Voltage VCEO = 5 V • Ideal for 2 GHz Band applications. e.g 2.4 GHz WLAN, Digital cordless phone.
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2SC5945
REJ03G0443-0300
PWSN0006JA-A
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ZO 607 MA
Abstract: transistor zo 607 zo 607 zo 107 2SC5945 2SC5945TR-E
Text: 2SC5945 Si NPN Epitaxial High Frequency Medium Power Amplifier REJ03G0443-0300 Rev.3.00 Aug 03, 2006 Features • Excellent Linearity P1dB at output = +26 dBm typ. f = 2.4 GHz • High Collector to Emitter Voltage VCEO = 5 V • Ideal for 2 GHz Band applications. e.g 2.4 GHz WLAN, Digital cordless phone.
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2SC5945
REJ03G0443-0300
PWSN0006JA-A
ZO 607 MA
transistor zo 607
zo 607
zo 107
2SC5945
2SC5945TR-E
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rjh3047
Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing
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REJ01G0001-0400
rjh3047
rjh3077
rjp3047
RJH3047DPK
rjp3049
rjp6065
rjp3053
RJP3042
smd code FX mosfet
RJP6055
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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rjp3053
Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5
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REJ16G0001-1900
rjp3053
RJP3063
rjp6065
RJP2557
RJP3057
RJH30
RQJ0301
RJP3065
rjk5020
RJK2009
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2SC5945
Abstract: 2SC5945TR-E 0773
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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1002ds
Abstract: 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as
Text: 2004.4 Renesas Transistors/Thyristors/Triacs Status List Topic—CMFPAK-6 Series of Power MOS FETs for Portable Devices •·······················································2 Index ······················································································3 to 5
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24EMP
BRC124ETP
BRC143ETP
BRC144ECM
CR3KM-12
FS10KM-6
FS10VS-6
FS16KM-6
FS16VS-6
HAT3017R
1002ds
4008ZB
2SC 9012
MP 1009 es
2SC 8050
20AAJ-8H
6020v4
2SC1417
2SC 8550
cr3as
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