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    2SC5232 Price and Stock

    Toshiba America Electronic Components 2SC5232BTE85LF

    TRANS NPN 12V 0.5A SC59
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    Toshiba America Electronic Components 2SC5232-B(TE85L,F)

    Bipolar Transistor (BJT)
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    Chip1Stop 2SC5232-B(TE85L,F) 1,900
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    2SC5232 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC5232 Kexin Silicon NPN Epitaxial Original PDF
    2SC5232 TY Semiconductor Silicon NPN Epitaxial - SOT-23 Original PDF
    2SC5232 Unknown NPN Transistor Scan PDF
    2SC5232 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC5232 Toshiba SILICON NPN EPITAXIAL TYPE (PCT PROCESS) TRANSISTOR Scan PDF
    2SC5232 Toshiba NPN EPITAXIAL TYPE (GENERAL PURPOSE AMPLIFIER, SWITCHING AND MUTING SWITCH APPLICATIONS) Scan PDF
    2SC5232BTE85LF Toshiba Transistors (BJT) - Single, Discrete Semiconductor Products, TRANSISTOR NPN S-MINI Original PDF

    2SC5232 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: 2SC5232 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC5232 General Purpose Amplifier Applications Switching and Muting Switch Application • Unit: mm Low saturation voltage: VCE (sat) (1) = 15 mV (typ.) @IC = 10 mA/IB = 0.5 mA • Large collector current: IC = 500 mA (max)


    Original     		PDF 2SC5232 O-236MOD SC-59

    2SC5232

    Abstract: No abstract text available
    Text: 2SC5232 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC5232 General Purpose Amplifier Applications Switching and Muting Switch Application • Unit: mm Low saturation voltage: VCE (sat) (1) = 15 mV (typ.) @IC = 10 mA/IB = 0.5 mA • Large collector current: IC = 500 mA (max)


    Original     		PDF 2SC5232 2SC5232

    Untitled

    Abstract: No abstract text available
    Text: 2SC5232 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC5232 General Purpose Amplifier Applications Switching and Muting Switch Application Unit: mm • Low saturation voltage: VCE (sat) (1) = 15 mV (typ.) @IC = 10 mA/IB = 0.5 mA • Large collector current: IC = 500 mA (max)


    Original     		PDF 2SC5232

    2SC5232

    Abstract: No abstract text available
    Text: 2SC5232 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC5232 General Purpose Amplifier Applications Switching and Muting Switch Application • Unit: mm Low saturation voltage: VCE (sat) (1) = 15 mV (typ.) @IC = 10 mA/IB = 0.5 mA · Large collector current: IC = 500 mA (max)


    Original     		PDF 2SC5232 2SC5232

    Untitled

    Abstract: No abstract text available
    Text: Reliability Tests Report Product Name: 2SC5232 Package Name: S-Mini 1. Thermal tests Test Item Heat resistance Reflow Heat resistance (Flow) Heat resistance (Iron) Temperature cycling Test Condition Peak : 260 deg.C(a moment) Reflow zone : 230 deg.C 30 to 50 s


    Original     		PDF 2SC5232

    Untitled

    Abstract: No abstract text available
    Text: SMD Type Type SMD Transistors IC Product specification 2SC5232 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 @IC = 10 mA/IB = 0.5 mA 1 0.55 Low saturation voltage: VCE sat (1) = 15 mV (typ.) +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 Large collector current: IC = 500 mA (max).


    Original     		PDF 2SC5232 OT-23

    2SC5232

    Abstract: No abstract text available
    Text: 2SC5232 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC5232 ○ 低周波増幅用 ○ ミューティング用 ○ スイッチング用 単位: mm • コレクタ飽和電圧が低い。 : VCE (sat) (1) = 15 mV (標準)


    Original     		PDF 2SC5232 O-236MOD SC-59 2SC5232

    Untitled

    Abstract: No abstract text available
    Text: 2SC5232 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC5232 General Purpose Amplifier Applications Switching and Muting Switch Application • Unit: mm Low saturation voltage: VCE (sat) (1) = 15 mV (typ.) @IC = 10 mA/IB = 0.5 mA • Large collector current: IC = 500 mA (max)


    Original     		PDF 2SC5232

    2SC5232

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Silicon NPN Epitaxial 2SC5232 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 @IC = 10 mA/IB = 0.5 mA 1 Large collector current: IC = 500 mA max . 0.55 Low saturation voltage: VCE (sat) (1) = 15 mV (typ.) +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3


    Original     		PDF 2SC5232 OT-23 2SC5232

    2SC5232

    Abstract: No abstract text available
    Text: 2SC5232 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC5232 General Purpose Amplifier Applications Switching and Muting Switch Application • Unit: mm Low saturation voltage: VCE (sat) (1) = 15 mV (typ.) @IC = 10 mA/IB = 0.5 mA • Large collector current: IC = 500 mA (max)


    Original     		PDF 2SC5232 2SC5232

    lm2804

    Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
    Text: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.


    Original     		PDF BCE0030C S-167 BCE0030D lm2804 marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983

    SSM3J307T

    Abstract: SSM3J328R SSM3J334R
    Text: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g


    Original     		PDF 200-mA BCE0030D SSM3J307T SSM3J328R SSM3J334R

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01

    ESM 740

    Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
    Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.


    Original     		PDF SCE0003A ESM 740 transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126

    TOSHIBA MG150N2YS40

    Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
    Text: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入


    Original     		PDF 050106DAA1 /SC-70 YTF612 2SK2381 YTF841 2SK2387 YTF442 2SK2149 YTF613 TOSHIBA MG150N2YS40 mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF 2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


    Original     		PDF SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122

    TPCA*8030

    Abstract: lm2804 TPCA*8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558
    Text: 製品カタログ 2009-9 東芝半導体 製品カタログ 汎用小信号面実装対応素子 （トランジスタダイオード、セルパック） SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S


    Original     		PDF TC7SZ126FU SC-88A OT-353 BCJ0052E BCJ0052D TPCA*8030 lm2804 TPCA*8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558

    marking fa

    Abstract: 2SC5232
    Text: TOSHIBA 2SC5232 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC5232 Unit in mm GENERAL PURPOSE AM PLIFIER APPLICATIONS SWITCHING AND MUTING SWITCH APPLICATION • + 0.5 Low Saturation Voltage : V ce (sat) (l) = 15mV(Typ.) @ Iq = 10mA / Ig = 0.5mA


    OCR Scan     		PDF 2SC5232 500mA marking fa 2SC5232

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5232 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC 5232 GENERAL PURPOSE AMPLIFIER APPLICATIONS SWITCHING AND MUTING SWITCH APPLICATION Low Saturation Voltage Large Collector Current VCE (sat) (D = 15mV (Typ.) @ I q = 10mA / Iß = 0.5mA


    OCR Scan     		PDF 2SC5232 500mA 9610TION

    2SC5232

    Abstract: marking FA
    Text: TO SH IBA 2SC5232 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC5232 Unit in mm GENERAL PURPOSE AMPLIFIER APPLICATIONS SWITCHING AND MUTING SWITCH APPLICATION + 0.5 2 .5 -0 .3 + 0.25 k 1-5 - ° - 15 >i IL o w S a t u r a t i o n V o lt a g e


    OCR Scan     		PDF 2SC5232 500mA O-236 2SC5232 marking FA

    toshiba h05

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5232 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC5232 GENERAL PURPOSE AMPLIFIER APPLICATIONS Unit in mm SWITCHING AND MUTING SWITCH APPLICATION h0.5 • Low Saturation Voltage : V^ e (sat) (l) = 15mV(Typ.) @ Iq = 10mA / Ig = 0.5mA


    OCR Scan     		PDF 2SC5232 500mA toshiba h05

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A TENTATIVE 2SC5232 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2 SC 5 2 3 2 GENERAL PURPOSE AMPLIFIER APPLICATIONS SWITCHING AND MUTING SWITCH APPLICATION • Low Saturation Voltage • Large Collector Current Unit in mm + 0.5 1.5 - 0 . 3


    OCR Scan     		PDF 2SC5232 500mA

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


    OCR Scan     		PDF T258-OMI FAX06 2SC144 2SD466 2sc5266