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    2SC3279 Search Results

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    2SC3279 Price and Stock

    Micro Commercial Components 2SC3279-N-AP

    TRANS NPN 10V 2A TO92
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    Micro Commercial Components 2SC3279-L-AP

    TRANS NPN 10V 2A TO92
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    Micro Commercial Components 2SC3279-M-AP

    TRANS NPN 10V 2A TO92
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    Toshiba America Electronic Components 2SC3279

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    Bristol Electronics 2SC3279 473
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    . 2SC3279

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    Bristol Electronics 2SC3279 62 2
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    2SC3279 Datasheets (27)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SC3279 Micro Commercial Components TRANS GP BJT NPN 10V 2A 3TO-92 Original PDF
    2SC3279 Various Russian Datasheets Transistor Original PDF
    2SC3279 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC3279 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC3279 Unknown Cross Reference Datasheet Scan PDF
    2SC3279 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC3279 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC3279 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC3279 Toshiba NPN EPITAXIAL TYPE (STOROBO FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS) Scan PDF
    2SC3279 Toshiba TO-92 Transistors Scan PDF
    2SC3279L Micro Commercial Components TRANS GP BJT NPN 10V 2A 3TO-92 Original PDF
    2SC3279-L Toshiba 2SC3279 - TRANSISTOR 2000 mA, 10 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, 2-5F1B, SC-43, 3 PIN, BIP General Purpose Small Signal Original PDF
    2SC3279-L Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC3279-L-AP Micro Commercial Components TRANSISTOR TO-92 MOD Original PDF
    2SC3279M Micro Commercial Components TRANS GP BJT NPN 10V 2A 3TO-92 Original PDF
    2SC3279-M Toshiba 2SC3279 - TRANSISTOR 2000 mA, 10 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, 2-5F1B, SC-43, 3 PIN, BIP General Purpose Small Signal Original PDF
    2SC3279-M Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC3279-M-AP Micro Commercial Components TRANSISTOR TO-92 MOD Original PDF
    2SC3279-MTE2FT Toshiba 2SC3279 - Trans GP BJT NPN 10V 2A 3-Pin TO-92 Original PDF
    2SC3279N Micro Commercial Components TRANS GP BJT NPN 10V 2A 3TO-92 Original PDF

    2SC3279 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC3279

    Abstract: No abstract text available
    Text: 2SC3279 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 2SC3279 ○ ストロボフラッシュ用 ○ 中電力増幅用 • 単位: mm hFE が高く直線性が良好です。 : hFE (1) = 140~600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (最小), 200 (標準) (VCE = 1 V, IC = 2 A)


    Original     		PDF 2SC3279 SC-43 2SC3279

    transistor Common collector configuration

    Abstract: 2SC3279
    Text: ST 2SC3279 NPN Silicon Epitaxial Planar Transistor for storobo flash and medium power amplifier applications. The transistor is subdivided into four groups L, M, N and P, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SC3279 transistor Common collector configuration 2SC3279

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components 2SC3279-L 2SC3279-M 2SC3279-N 2SC3279-P   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • NPN Silicon Epitaxial Transistors High DC Current Gain and excellent hFE Linearity


    Original     		PDF 2SC3279-L 2SC3279-M 2SC3279-N 2SC3279-P

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components 2SC3279-L 2SC3279-M 2SC3279-N 2SC3279-P   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • High DC Current Gain and excellent hFE Linearity hFE 1 =140-600 (V CE=1.0V, IC=0.5A)


    Original     		PDF 2SC3279-L 2SC3279-M 2SC3279-N 2SC3279-P

    14024

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components 2SC3279-L 2SC3279-M 2SC3279-N 2SC3279-P   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • High DC Current Gain and excellent hFE Linearity hFE 1 =140-600 (V CE=1.0V, IC=0.5A)


    Original     		PDF 2SC3279-L 2SC3279-M 2SC3279-N 2SC3279-P 14024

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors 2SC3279 TRANSISTOR（NPN ） TO—92 FEATURES Power amplifier applications 1. EMITTER MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units VCBO


    Original     		PDF 2SC3279 100mA

    2SC3279

    Abstract: No abstract text available
    Text: ST 2SC3279 NPN Silicon Epitaxial Planar Transistor for storobo flash and medium power amplifier applications. The transistor is subdivided into four groups L, M, N and P, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SC3279 2SC3279

    Untitled

    Abstract: No abstract text available
    Text: 2SC3279 NPN TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features High DC current gain and excellent hFE linearity Low saturation voltage MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage


    Original     		PDF 2SC3279 100mA

    2sc3279

    Abstract: 2SC327
    Text: MCC TM Micro Commercial Components 2SC3279-L 2SC3279-M 2SC3279-N 2SC3279-P   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • NPN Silicon Epitaxial Transistors High DC Current Gain and excellent hFE Linearity


    Original     		PDF 2SC3279-L 2SC3279-M 2SC3279-N 2SC3279-P 2sc3279 2SC327

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC3279 Features • High DC Current Gain and excellent hFE Linearity hFE 1 =140-600 (V CE=1.0V, IC=0.5A)


    Original     		PDF 2SC3279 10mAdc, 50mAdc) 10Vdc,

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors 2SC3279 TRANSISTOR NPN TO-92 FEATURES z High DC current gain and excellent hFE linearity z Low saturation voltage 1. EMITTER 2. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF 2SC3279 100mA

    2sc3279

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors 2SC3279 TRANSISTOR NPN TO-92 FEATURES z High DC current gain and excellent hFE linearity z Low saturation voltage 1. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF 2SC3279 100mA 2sc3279

    Untitled

    Abstract: No abstract text available
    Text: MCC   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# 2SC3279 Features • High DC Current Gain and excellent hFE Linearity hFE 1 =140-600 (V CE=1.0V, IC=0.5A) hFE(2) =70 (Min.), 200 (Typ.) (VCE=1.0V, IC=2.0A)


    Original     		PDF 2SC3279 50mAdc) 10Vdc,

    2SC3279

    Abstract: No abstract text available
    Text: 2SC3279 NPN Transistor Elektronische Bauelemente Plastic-Encapsulate Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 FEATURES 3.5 ±0.2 4.55±0.2 +0.2 4.5±0.2 High DC current gain and excellent hFE linearity 1.27 Typ.


    Original     		PDF 2SC3279 01-Jun-2002 2SC3279

    2SC3279

    Abstract: No abstract text available
    Text: ST 2SC3279 NPN Silicon Epitaxial Planar Transistor for storobo flash and medium power amplifier applications. The transistor is subdivided into four groups L, M, N and P, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SC3279 2SC3279

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components 2SC3279-L 2SC3279-M 2SC3279-N 2SC3279-P   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • High DC Current Gain and excellent hFE Linearity


    Original     		PDF 2SC3279-L 2SC3279-M 2SC3279-N 2SC3279-P

    2sc3279

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components 2SC3279 2SC3279-L 2SC3279-M 2SC3279-N 2SC3279-P   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • High DC Current Gain and excellent hFE Linearity


    Original     		PDF 2SC3279 2SC3279-L 2SC3279-M 2SC3279-N 2SC3279-P 2sc3279

    2SC3279

    Abstract: No abstract text available
    Text: Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 2SC3279 Features • High DC Current Gain and excellent hFE Linearity hFE 1 =140-600 (V CE=1.0V, IC=0.5A) hFE(2) =70 (Min.), 200 (Typ.) (VCE=1.0V, IC=2.0A) Pin Configuration


    Original     		PDF 2SC3279 50mAdc) 10Vdc, 2SC3279

    2sc3279

    Abstract: No abstract text available
    Text: 2SC3279 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3279 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and excellent hFE linearity : hFE (1) = 140~600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (min), 200 (typ.) (VCE = 1 V, IC = 2 A)


    Original     		PDF 2SC3279 2sc3279

    Untitled

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC3279 Features • High DC Current Gain and excellent hFE Linearity hFE 1 =140-600 (V CE=1.0V, IC=0.5A) hFE(2) =70 (Min.), 200 (Typ.) (VCE=1.0V, IC=2.0A)


    Original     		PDF 2SC3279 50mAdc) 10Vdc,

    2SC3279

    Abstract: No abstract text available
    Text: 2SC3279 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3279 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and excellent hFE linearity : hFE (1) = 140~600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (min), 200 (typ.) (VCE = 1 V, IC = 2 A)


    Original     		PDF 2SC3279 2SC3279

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC3279 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3279 Unit in mm STOROBO FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS • • .5.1 M AX. High DC Current Gain and Excellent hpg Linearity : h-FE (1)= 140—600 (VCE = 1V, IC = 0,5A)


    OCR Scan     		PDF 2SC3279 Ta-25 961001EAA2'

    2sc327

    Abstract: 2SC3279
    Text: TOSHIBA 2SC3279 T O SH IB A TR A N SIST O R SILICO N NPN EPITAXIAL TYPE PCT PROCESS 2SC3279 Unit in mm ST O R O B O FLASH A PP LIC A TIO N S M E D IU M P O W ER A M P LIF IER A PP LIC A T IO N S . 5.1 M A X . • High DC Current Gain and Excellent hjpg Linearity


    OCR Scan     		PDF 2SC3279 2sc327 2SC3279

    2sc3288

    Abstract: 2SC3284 2SC3311 2SC3289 2-4F1C 2SA1306 2SC3298 2SA1309 2SC3303 2-21F1A 2SC3287
    Text: - 152 - mXËfâ M 2SC3279 2SC3280 2SC3281 2SC3282A 2SC3283A 2SC3284 2SC3285 2SC3286-M 2SC3287 2SC3288 2SC3289 2SC3292 2SC3293 2SC3294 2SC3296 2SC3298 2SC3298A 2SC3298B 2SC3299 2SC3302 2SC3303 2SC3306 2SC3307 2SC3309 2SC3310 2SC3311 2SC3311A 2SC3312 2SC3313


    OCR Scan     		PDF 2SC3279 2SC3280 2SC3281 2SC3282A 800MHz 2SC3283A 2SC3284 2SC3285 2SC3286-M 2sc3288 2SC3284 2SC3311 2SC3289 2-4F1C 2SA1306 2SC3298 2SA1309 2SC3303 2-21F1A 2SC3287