2SB1389
Abstract: No abstract text available
Text: Inchange Semiconductor Product Specification 2SB1389 Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・High DC current gain ・Low saturation voltage ・DARLINGTON APPLICATIONS ・For use in low frequency power amplifier applications PINNING
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2SB1389
O-220Fa
O-220Fa)
-40mA
2SB1389
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2SB1101
Abstract: 2SB1389 Hitachi DSA00398
Text: 2SB1389 Silicon PNP Triple Diffused Application Low frequency power amplifier Outline TO-220FM 2 1 12 3 1. Base 2. Collector 3. Emitter ID 4.5 kΩ Typ 500 Ω (Typ) 3 2SB1389 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage
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2SB1389
O-220FM
2SB1101
2SB1389
Hitachi DSA00398
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2SB1389
Abstract: No abstract text available
Text: SavantIC Semiconductor Product Specification 2SB1389 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·High DC current gain ·Low saturation voltage ·DARLINGTON APPLICATIONS ·For use in low frequency power amplifier applications PINNING
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2SB1389
O-220Fa
O-220Fa)
-40mA
2SB1389
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Hitachi DSA002751
Abstract: No abstract text available
Text: 2SB1389 Silicon PNP Triple Diffused Application Low frequency power amplifier Outline TO-220FM 2 1 12 3 1. Base 2. Collector 3. Emitter ID 4.5 kΩ Typ 500 Ω (Typ) 3 Absolute Maximum Ratings (Ta = 25GC) Item Symbol Ratings Unit Collector to base voltage
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2SB1389
O-220FM
10ica,
D-85622
Hitachi DSA002751
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Hitachi DSA002788
Abstract: No abstract text available
Text: 2SB1389 Silicon PNP Triple Diffused Application Low frequency power amplifier Outline TO-220FM 2 1 12 3 1. Base 2. Collector 3. Emitter ID 4.5 kΩ Typ 500 Ω (Typ) 3 2SB1389 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage
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2SB1389
O-220FM
10ica,
D-85622
Hitachi DSA002788
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2SB1101
Abstract: 2SB1389 DSA003644
Text: 2SB1389 Silicon PNP Triple Diffused ADE-208-869 Z 1st. Edition Sep. 2000 Application Low frequency power amplifier Outline TO-220FM 2 1 12 3 1. Base 2. Collector 3. Emitter ID 4.5 kΩ (Typ) 500 Ω (Typ) 3 2SB1389 Absolute Maximum Ratings (Ta = 25°C) Item
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2SB1389
ADE-208-869
O-220FM
2SB1101
2SB1389
DSA003644
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2SB1389
Abstract: No abstract text available
Text: 2SB1389 Thermal resistance θj-c °C/W Transient Thermal Resistance 10 3 TC = 25°C 1.0 0.3 0.1 1m 10m 100m 1.0 Time t (s) 10 100 1000
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2SB1389
2SB1389
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2SB1389
Abstract: No abstract text available
Text: JMnic Product Specification 2SB1389 Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・High DC current gain ・Low saturation voltage ・DARLINGTON APPLICATIONS ・For use in low frequency power amplifier applications PINNING PIN DESCRIPTION
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2SB1389
O-220Fa
O-220Fa)
-40mA
2SB1389
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2SB1389
Abstract: No abstract text available
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -60V(Min) ·High DC Current Gain: hFE= 1000(Min)@ (VCE= -3V, IC= -2A) APPLICATIONS ·Designed for low frequency power amplifier applications.
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-40mA
2SB1389
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2SB1101
Abstract: 2SB1389
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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D-85622
2SB1101
2SB1389
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7054F
Abstract: BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557
Text: INDEX General General Information Semiconductor Packages Sales Locations Microcontroller Microcontroller General MultiChipModules Smart Card Micro. Overview Micro. Shortform Micro. Hardware Manual Micro. Program. Manual Micro. Application Notes LCD Controller / Driver
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2sc4537
2sc454.
2sc4591
2sc4592
2sc4593
2sc460.
2sc4628
2sc4629
2sc4643
2sc4680
7054F
BC564A
HA13563
AC123A
HITACHI microcontroller H8 534 manual
IC 74LS47
AC538
BC245A
2SK3235
HA13557
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1002ds
Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
Text: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2
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2SC5998"
C5139
2SC5247
2SC5907
2SD1504
2SJ361
2SK439
2SK494
2SK3349
BCR5KM-12L
1002ds
6020v4
TRANSISTOR BJ 131-6
2SC 8550
transistor 2sc1417
HITACHI 08122B
transistor h945
6030v4
2SC 8050
25aaj
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2SB1101
Abstract: 2SB1389
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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D-85622
2SB1101
2SB1389
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lvc16244
Abstract: BC240 2sk3174 CBT1G125 LV2GT14A HC32 Hitachi HA13557A transistor 2SC1162 H8 hitachi programming manual 30204SP
Text: HITACHI ELECTRONIC COMPONENTS DATABOOK 2003 INDEX General Informations Multi Perpose Products Safety Considerations Hitachi Semiconductor Package Databook HITACHI Sales Locations Diodes Microcontroller Microcontroller General Microcontroller Overview List
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HD49323A
HA12134A
HA12141N
HA12155N
HA12163
HA12167F
HA12173
HA12179F
HA12181F
HA12187F
lvc16244
BC240
2sk3174
CBT1G125
LV2GT14A
HC32 Hitachi
HA13557A
transistor 2SC1162
H8 hitachi programming manual
30204SP
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1002ds
Abstract: 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as
Text: 2004.4 Renesas Transistors/Thyristors/Triacs Status List Topic—CMFPAK-6 Series of Power MOS FETs for Portable Devices •·······················································2 Index ······················································································3 to 5
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24EMP
BRC124ETP
BRC143ETP
BRC144ECM
CR3KM-12
FS10KM-6
FS10VS-6
FS16KM-6
FS16VS-6
HAT3017R
1002ds
4008ZB
2SC 9012
MP 1009 es
2SC 8050
20AAJ-8H
6020v4
2SC1417
2SC 8550
cr3as
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Untitled
Abstract: No abstract text available
Text: 2SB1389 Silicon PNP Triple Diffused HITACHI Application Low frequency power amplifier Outline Absolute Maximum Ratings Ta = 25 °C Item Symbol Ratings Unit C o lle cto r to base vo lta g e ^G B O -6 0 V C o lle cto r to e m itte r vo lta g e V CEo -6 0 V
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2SB1389
D-85622
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Untitled
Abstract: No abstract text available
Text: 2SB1389 Silicon PNP Triple Diffused HITACHI Application Low frequency power amplifier Outline T 0 -2 20 F M H 2 1 1. Base 2. C ollector 3. Emitter 4.5 kQ Typ 1 2 3 Absolute Maximum Ratings (T a = | 'o 500 Q (Typ) ¿ 3 2 5 °C ) Item Symbol Ratings Unit Collector to base voltage
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2SB1389
2SB1101.
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Untitled
Abstract: No abstract text available
Text: HITACHI 2SB1389 Silicon PNP Triple Diffused Low Frequency Power Amplifier Absolut« Maximum Ratings Ta = 25°C Mem Symbol Rating Unit Collector to base voltage V CBO -6 0 V Collector to emitter voltage V CEO -•60 V Emitter to base voltage V EBO -7 V Collector current
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2SB1389
O-22G
2SBII01.
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2SB536A
Abstract: 2SA1301 TOSHIBA 2SB1320A 2SA1356 2SB1318 2SA1624 2SB1242 2sa1133 2SA1426 2SA1431
Text: - 2SB 2SB 2SB 2SB 2SB 1321 ^ 1322 ^ 1323 1324 ^ 2SB 2SB 2SB 2SB 2SB 2SB 2SB 1326 1328 1329 , 1330 * 1331 1332 1333 / 2SB 2SB 2SB 2SB 2SB 2SB 1336 1337 1338 1339 1340 1341 *• 2SB 1345 2SB 1346 2SB 1347 SANYO B M TOSHIBA NEC ÏL HITACHI * ± a FUJITSU fâ
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2SB13n7M
2SA1782
2SB1320A
2SA1561
2SA1703
2SA1426
2SA1559
2SB1242
2SB536A
2SA1301 TOSHIBA
2SB1320A
2SA1356
2SB1318
2SA1624
2SB1242
2sa1133
2SA1426
2SA1431
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2sb1355
Abstract: 2SB1493 2SB1516 2SA1842 2sb1261 2SB906 2SB1328 2SB1329 2SB1332 2SA1770
Text: - m € Type No. 2S5 1541 2SB 1542 2S8 1543 2SB 1544 2SB 1545 2SB 1546 2SB 1548 ^ 2SB 1549 2SB 1550 2SB 1551 2SB 1552 2SB 1553 2SB i554 2SB 1555 2S8 1556 2SB 1557 2SB 1558 2SB 1559 2SB 1561 2SB 1562 2SB 1563 2SB 1564 2SB 1565 2SB 1566 ^ 2SB 1567 2SB 1568 ^
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2SR562
2SB1329
2SA1706
2SB1433
2SB1517
2SA1707
2SA1708
2SB1459
2SB1332
2sb1355
2SB1493
2SB1516
2SA1842
2sb1261
2SB906
2SB1328
2SB1329
2SB1332
2SA1770
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2SA1115
Abstract: 2sa1015 2SB1340 2SA1432 2SA1015L 2SB1342 2SB1370 A1592 2sa112 2SB753
Text: - m £ tt « Type No. Man uf. 2SB 1249 = 2 SB 1250 2 SB 1251 2SB 1252 fé T K T s fâ T fô T 2 SB 1253 2SB 1257 2SB 1258 - if'y'ry ÿ-yjy 2SB 1259, 2SB 1260 2SB 1261 = £ SANYO 2SA15 9 2 2SB1226 2SB1227 2SB1227 2SB1228 2SBÌ223 2SB1228 a 3C T0SHÍBA 2SA1225
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2SA1225
2SA1178
2SB1226
2SB1024
2SB1342
2SB1227
2SB1024
2SB1430
2SA1115
2sa1015
2SB1340
2SA1432
2SA1015L
2SB1342
2SB1370
A1592
2sa112
2SB753
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2SC144
Abstract: 2SD466 2sc5266
Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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T258-OMI
FAX06
2SC144
2SD466
2sc5266
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2SB1370
Abstract: 2SB1376 2sd2083 2sb1383 2SD2012 2SB1369 2SB1371 2SB1372 2SB1373 2SB1375
Text: - 88 - T a = 2 5 U *EP(âTc=25£C A, ft m S -A. v'cBO VcEO (V) (V) ÍCCDC) (A) n (W) m n ft T (max) ( jw A) (W) (min) uh t (max) (V? te Vce (V) (Ta=25cC ) Ic/I e (A) OEPiitypfil] • BE.\oak/ (max) (V) (V) Ic (A) 1b (A) 2SB1369 □— A G -60 -60 -3 40
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2SB1369
2SB1370
2SB1371
2SB1372
2SB1373
2SB1375
2SB1376
61393A
09K/0.
2SD2099
2SB1370
2sd2083
2sb1383
2SD2012
2SB1375
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transistor 2sk
Abstract: transistor sp-10 4ac14 2SK157 transistor 2sk 70 2sj318 transistor 2sk 12 2SK2851 4AC14 TRANSISTOR 2sK 135 K 2796
Text: POWER TRANSISTOR •General switching Darlington transistor Characteristics tire 7.5 1 k - 20 k 6.0 1 k - 20 k 6.0 1 k - 20 k 8.0 1 k - 20 k 9.0 150011.5 500l_ 16.0 1 k -2 0 k 5.0 1 k -2 0 k 4.0 1 k -2 0 k 3.1 1 k -2 0 k 4.0 1 k -2 0 k 3.0 15006.0 1 k - 20 k
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2SD16
2SD1603
2SD1604
2SD1605
2SD1606
2SD1756
2SD1976
2SB1389
2SB1390
2SB1391
transistor 2sk
transistor sp-10 4ac14
2SK157
transistor 2sk 70
2sj318
transistor 2sk 12
2SK2851
4AC14
TRANSISTOR 2sK 135
K 2796
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