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    2SB1218A Search Results

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    2SB1218A Price and Stock

    Panasonic Electronic Components 2SB1218AQL

    TRANS PNP 45V 0.1A SMINI3
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    Panasonic Electronic Components 2SB1218ARL

    TRANS PNP 45V 0.1A SMINI3
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    Panasonic Electronic Components 2SB1218A0L

    TRANS PNP 45V 0.1A SMINI3
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    Panasonic Electronic Components 2SB1218ASL

    TRANS PNP 45V 0.1A SMINI3
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    2SB1218A Datasheets (19)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SB1218A Panasonic PNP Transistor Original PDF
    2SB1218A Panasonic Silicon PNP epitaxial planer type Original PDF
    2SB1218A Panasonic Silicon PNP epitaxial planer type Original PDF
    2SB1218A Transys Electronics Plastic-Encapsulated Transistors Original PDF
    2SB1218A Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB1218A Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SB1218A Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB1218A Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB1218A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB1218A0L Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS PNP GP AMP 45VCEO SMINI 3P Original PDF
    2SB1218AB Panasonic Silicon PNP Epitaxial Planar Type Transistor Original PDF
    2SB1218ABQ Panasonic Silicon PNP Epitaxial Planar Type Transistor Original PDF
    2SB1218ABR Panasonic Silicon PNP Epitaxial Planar Type Transistor Original PDF
    2SB1218ABS Panasonic Silicon PNP Epitaxial Planar Type Transistor Original PDF
    2SB1218AQL Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS PNP GP AMP 45VCEO SMINI 3P Original PDF
    2SB1218ARL Panasonic TRANS PNP GP AMP 45VCEO SMINI 3P Original PDF
    2SB1218ARL Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS PNP GP AMP 45VCEO SMINI 3P Original PDF
    2SB1218ASL Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS PNP GP AMP 45VCEO SMINI 3P Original PDF
    2SB1218AW Galaxy Semi-Conductor Holdings PNP Silicon Epitaxial Planar Transistor Original PDF

    2SB1218A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SB1218A

    Abstract: 2SD1819A
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1819A Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1218A (0.425) Unit: mm 0.3+0.1 –0.0 0.15+0.10 –0.05 1.25±0.10 2.1±0.1 0.9+0.2 –0.1 5˚


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    PDF 2002/95/EC) 2SD1819A 2SB1218A 2SB1218A 2SD1819A

    2SB1218A

    Abstract: 2SD1819A
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1218A Silicon PNP epitaxial planar type For general amplification Complementary to 2SD1819A (0.425) Unit: mm 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5° 1.25±0.10 0.9+0.2 –0.1


    Original
    PDF 2002/95/EC) 2SB1218A 2SD1819A 2SB1218A 2SD1819A

    2SB1218A

    Abstract: 2SD1819A
    Text: Transistor 2SB1218A Silicon PNP epitaxial planer type For general amplification Complementary to 2SD1819A Unit: mm 2.1±0.1 • Features 0.425 0.3–0 0.65 1.3±0.1 +0.1 1.25±0.1 1 0.65 ● High foward current transfer ratio hFE. S-Mini type package, allowing downsizing of the equipment and


    Original
    PDF 2SB1218A 2SD1819A 2SB1218A 2SD1819A

    2SB1218AW

    Abstract: 2SD1819A marking BQ 4
    Text: BL Galaxy Electrical Production specification PNP Silicon Epitaxial Planar Transistor FEATURES z High forward current transfer ratio hFE z Excellent HFE Linearity. z Complements the 2SD1819A. 2SB1218AW Pb Lead-free APPLICATIONS z For general purpose amplification.


    Original
    PDF 2SB1218AW 2SD1819A. OT-323 BL/SSSTF034 2SB1218AW 2SD1819A marking BQ 4

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SOT-323 2SB1218A TRANSISTOR PNP 1. BASE 2. EMITTER FEATURES Power dissipation 150 PCM: 1.25±0.05 1.01 REF 3. COLLECTOR mW (Tamb=25℃) 0.30 1.30±0.03 Collector current


    Original
    PDF OT-323 OT-323 2SB1218A -100mA, -10mA 200MHz

    2SB1218A

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SOT-323 2SB1218A TRANSISTOR PNP 1. BASE 2. EMITTER FEATURES Power dissipation PCM: 1. 25¡ À0. 05 1. 01 REF 3. COLLECTOR 150 mW (Tamb=25℃) 0. 30 1. 30¡ À0. 03


    Original
    PDF OT-323 OT-323 2SB1218A -100mA, -10mA 200MHz 2SB1218A

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1218A Silicon PNP epitaxial planar type For general amplification Complementary to 2SD1819A (0.425) Unit: mm 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5° 1.25±0.10 0.9+0.2 –0.1


    Original
    PDF 2002/95/EC) 2SB1218A 2SD1819A

    2SB1218A

    Abstract: 2SD1819A
    Text: Transistor 2SB1218A Silicon PNP epitaxial planer type For general amplification Complementary to 2SD1819A Unit: mm 2.1±0.1 • Features 0.425 0.3–0 0.65 1.3±0.1 +0.1 1.25±0.1 1 0.65 ● High foward current transfer ratio hFE. S-Mini type package, allowing downsizing of the equipment and


    Original
    PDF 2SB1218A 2SD1819A 100Hz 10kHz 270Hz 2SB1218A 2SD1819A

    2SB1218A

    Abstract: 2SB1218AR 2SB1218A-R 2SD1819A 2SB1218A-Q
    Text: 2SB1218A -0.1A , -60V PNP Silicon Epitaxial Paner Transistors Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free APPLICATIONS  SOT-323 General Purpose Amplification A FEATURES   L 3 3 High DC Current Gain


    Original
    PDF 2SB1218A OT-323 2SD1819A 2SB1218A-Q 2SB1218A-R 2SB1218A-S 14-Feb-2011 -100mA, -10mA 2SB1218A 2SB1218AR 2SB1218A-R 2SD1819A 2SB1218A-Q

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1819A Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1218A (0.425) Unit: mm 0.3+0.1 –0.0 0.15+0.10 –0.05 5˚ 0.2±0.1 2 di p Pl lan nclu ea e


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    PDF 2002/95/EC) 2SD1819A 2SB1218A

    2SB1218A

    Abstract: 2SD1819A
    Text: Transistors 2SB1218A Silicon PNP epitaxial planar type For general amplification Complementary to 2SD1819A 0.425 Unit: mm 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5° 1.25±0.10 0.9+0.2 –0.1 • High forward current transfer ratio hFE • S-Mini type package, allowing downsizing of the equipment and


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    PDF 2SB1218A 2SD1819A 2SB1218A 2SD1819A

    2SB1218A

    Abstract: 2sb1218
    Text: 2SB1218A 2SB1218A SOT-323 TRANSISTOR PNP 1. BASE 2. EMITTER FEATURES Power dissipation PCM: 1. 25¡ À0. 05 1. 01 REF 3. COLLECTOR 150 mW (Tamb=25℃) 0. 30 1. 30¡ À0. 03 Collector current ICM: -100 mA Collector-base voltage -45 V V(BR)CBO: Operating and storage junction temperature range


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    PDF 2SB1218A OT-323 -100mA, -10mA 200MHz 2SB1218A 2sb1218

    ZR 720

    Abstract: D 400 transistor 2SB1218A 2SD1819A
    Text: 2SD1819A NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product SOT-323 FEATURES z z A High foward current transfer ratio hFE. L Low collector to emitter saturation voltage VCE sat . 3 z Complementary to 2SB1218A B S Top View


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    PDF 2SD1819A OT-323 2SB1218A 01-Jun-2007 100mA, 200MHz ZR 720 D 400 transistor 2SB1218A 2SD1819A

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors 2SB1218A TRANSISTOR PNP FEATURES SOT–323  High DC Current Gain  Complementary to 2SD1819A APPLICATIONS  General Purpose Amplification MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


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    PDF OT-323 2SB1218A 2SD1819A

    2SB1218A

    Abstract: 2SD1819A
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1218A Silicon PNP epitaxial planar type For general amplification Complementary to 2SD1819A (0.425) Unit: mm M Di ain sc te on na tin nc ue e/ d 0.3+0.1 –0.0 0.15+0.10 –0.05


    Original
    PDF 2002/95/EC) 2SB1218A 2SD1819A 2SB1218A 2SD1819A

    2SB1218A

    Abstract: 2SD1819A
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1819A Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1218A (0.425) Unit: mm M Di ain sc te on na tin nc ue e/ d 0.3+0.1 –0.0 0.15+0.10 –0.05


    Original
    PDF 2002/95/EC) 2SD1819A 2SB1218A 2SB1218A 2SD1819A

    2SB1218A

    Abstract: 2SD1819A
    Text: Transistor 2SD1819A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB1218A Unit: mm 2.1±0.1 • Features +0.1 0.3–0 0.65 1.3±0.1 0.65 3 Ratings Unit VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to base voltage


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    PDF 2SD1819A 2SB1218A 2SB1218A 2SD1819A

    2SD1819A

    Abstract: transistor ZR 2SD1819AR 2SB1218A 2SD1819AS 2SD1819A-R 2SD1819A-S
    Text: 2SD1819A 0.1A , 60V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente 24 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-323 FEATURES High DC Current Gain. Low collector to emitter saturation voltage VCE sat . Complementary to 2SB1218A


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    PDF 2SD1819A OT-323 2SB1218A 2SD1819A-Q 2SD1819A-R 2SD1819A-S 24-Feb-2011 100mA 100mA, 200MHz 2SD1819A transistor ZR 2SD1819AR 2SB1218A 2SD1819AS 2SD1819A-S

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1819A Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1218A (0.425) Unit: mm 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5˚ 1.25±0.10 0.9+0.2 –0.1


    Original
    PDF 2002/95/EC) 2SD1819A 2SB1218A

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1819A Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1218A (0.425) Unit: mm 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5˚ 1.25±0.10 0.9+0.2 –0.1


    Original
    PDF 2002/95/EC) 2SD1819A 2SB1218A

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors 2SD1819A TRANSISTOR NPN FEATURES SOT–323  High DC Current Gain  Complementary to 2SB1218A  Low Collector to Emitter Saturation Voltage APPLICATIONS  General Purpose Amplification


    Original
    PDF OT-323 2SD1819A 2SB1218A 100mA, 200MHz

    2SD2458

    Abstract: 2SD2436 2SD2434 2SB1600 2SB642 2SB1627 2SD2433 2SD1010 2sB774 transistor HOA1404-2
    Text: • Silicon Small Signal Transistors Package No. S9TST0D Applica­ tion Functions SS Mini Type (D1) f 2SB1462 I 2 SD 22 I 6 S Mini Type (D5) Mini Type (D10) ( 2SB709A I 2 SDI 8 I 9A I 2SD601A (2SB1219/A í 2SB710/A I 2SD1820/A I 2SD602/A 1 2SB1218A T Mini Type New S Type


    OCR Scan
    PDF O-92NL 2SB1462 2SD2216 2SB1218A I2SD1819A 2SB709A 2SD601A 2SB1627 I2SD2496 2SA1309A 2SD2458 2SD2436 2SD2434 2SB1600 2SB642 2SD2433 2SD1010 2sB774 transistor HOA1404-2

    2S897

    Abstract: 2SA1178 2SA1225 2SA1371 2SA1243 2SA1628 2SA1586 2SA879 2SA1770 2SA1283
    Text: 66 - m % tt T y p e No. 2 SB 1216 ^ ^ 2SB 1218 ^ 2SB 1218A a * 85 T fö T tö T 2SB 1219A fö 2SB 1220 ta 2SB 1219 V- 2SB 1222 2S8 1223 f 2SB 1224 2SB 1225 J 2SB 1226 ^ ±L 2SA1622 2SA1586 m ± m FU JITSU iß T MATSUS H I T A 2SB1218A 2 S A1576 2 S A 16 0 3


    OCR Scan
    PDF 2SA1647 2SB930A 2SB986 2SA1359 2SA1096 2SB1065 2SA1622 2SA1586 2SA1628 2SB1218A 2S897 2SA1178 2SA1225 2SA1371 2SA1243 2SA1628 2SA1586 2SA879 2SA1770 2SA1283

    2SB1446

    Abstract: 2SD2458 2sc5335 2SD1010 2SD1993 2SD1995 2SB642 2SD119 2SD2456 2SC2632
    Text: •Silicon Small Signal Transistors # General-use Low Frequency Amplifiers and Others Package No. SS-Mini Type (D1 ) S-Mini Type (D5) I 2SB1462 ' 2SB1218A . 2SD2216 2SD1819A : 2SB1219/A i 2SD1820/A i 2SA1791 i 2SC4656 Mini Type (D12) New S Type (034) ! 2SB709A


    OCR Scan
    PDF 2SB1462 2SB1218A 2SD1819A 2SB1219/A 2SD1820/A 2SB709A 2SD601A 2SB710/A 2SD602/A 2SA1309A 2SB1446 2SD2458 2sc5335 2SD1010 2SD1993 2SD1995 2SB642 2SD119 2SD2456 2SC2632