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    2SA2087 Search Results

    2SA2087 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SA2087 ROHM Power transistor Original PDF
    2SA2087TV2Q ROHM Power Transistor (-30 V, -2 A) Original PDF
    2SA2087TV2R ROHM Power Transistor (-30 V, -2 A) Original PDF

    2SA2087 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    A2087

    Abstract: 2SA2087 2SC5875 Package A2087
    Text: 2SA2087 Transistors Power transistor −30V, −2A 2SA2087 !External dimensions (Unit : mm) ATV 2.5 1.0 0.65Max. 0.5 4.4 0.9 6.8 14.5 !Features 1) High speed switching. (Tf : Typ. : 20ns at IC = −2A) 2) Low saturation voltage, typically (Typ. : −200mV at IC = −1.0A, IB = −100mA)


    Original     		PDF 2SA2087 65Max. -200mV -100mA) 2SC5875 A2087 A2087 2SA2087 2SC5875 Package A2087

    Package A2087

    Abstract: 2SA2087 2SC5875 A2087 2SA20
    Text: 2SA2087 Transistors Power transistor −30V, −2A 2SA2087 !External dimensions (Unit : mm) ATV 2.5 1.0 0.65Max. 0.5 4.4 0.9 6.8 14.5 !Features 1) High speed switching. (Tf : Typ. : 20ns at IC = −2A) 2) Low saturation voltage, typically (Typ. : −200mV at IC = −1.0A, IB = −100mA)


    Original     		PDF 2SA2087 65Max. -200mV -100mA) 2SC5875 A2087 Package A2087 2SA2087 2SC5875 A2087 2SA20

    C5875

    Abstract: 2SA2087 2SC5875
    Text: 2SC5875 Transistors Power transistor 30V, 2A 2SC5875 !External dimensions (Unit : mm) !Features 1) High speed switching. (Tf : Typ. : 20ns at IC = 2A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 1.0A, IB = 0.1A) 3) Strong discharge power for inductive load and


    Original     		PDF 2SC5875 200mV 2SA2087 65Max. C5875 C5875 2SA2087 2SC5875

    2SA2160

    Abstract: 2SA2149 2SC6005 RQW200 rdx100n45 RQA200N03 rqw200n03 RLA130N03 rdx*100n45 2sc6027
    Text: 2005 Transistor New Products Ver.1 MOS FET Series Low VCE sat Miniature Digital Transistor Series Low VCE(sat) Transistor Series Endured Discharge Voltage/ High Speed Switching/ Low Noise Transistor Series Muting Transistor Series MOS FET TUMT/TSMT Series


    Original     		PDF O-220FM 47P4869E 2SA2160 2SA2149 2SC6005 RQW200 rdx100n45 RQA200N03 rqw200n03 RLA130N03 rdx*100n45 2sc6027

    2sc5922

    Abstract: 2SC5734 2SC5917 2SC5989 2SA2054 2sc5919 2SC5987 2SC5734K 2SC5918 2SC5982
    Text: -Transistors ◆MOS FET Series ◆Low Vce sat Super-mini Transistors Series ◆Strong Discharge Voltage/ High Speed Switching Transistors Series ◆Muting Transistors Series MOS FET Series Power MOS FET Series Series Features Low RDs(on) High ESD capability


    Original     		PDF 200mW 500mW 15Min. 85Max. 15Max. 2sc5922 2SC5734 2SC5917 2SC5989 2SA2054 2sc5919 2SC5987 2SC5734K 2SC5918 2SC5982

    C5875

    Abstract: 2SA20 2SA2087 2SC5875
    Text: 2SC5875 Transistors Power transistor 30V, 2A 2SC5875 !External dimensions (Unit : mm) !Features 1) High speed switching. (Tf : Typ. : 20ns at IC = 2A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 1.0A, IB = 0.1A) 3) Strong discharge power for inductive load and


    Original     		PDF 2SC5875 200mV 2SA2087 65Max. C5875 C5875 2SA20 2SA2087 2SC5875

    2SC5734K

    Abstract: 2sc5917 2SC5734 2SA2054
    Text: Excellence in Electronics 2005 Ver.1 T ransistor New Products Pari No. B V ceo lc Ip N PN M [A] [A] 2SA2048K 2SC5730K 30 1 2 2SA2054K 2SC5734K 90 0.5 1 Package SMT3 ^ Pc=0.2W " PNP Pari No. Package TSMT3 Pc=0.5W * W Package ATV P c=1W J L 'V BV ceo [V] hF:


    OCR Scan     		PDF 2SA2048K 2SA2054K 2SC5730K 2SC5734K 2SA2048 2SA2113 2SA2134 2SA2090 2SC5916 2SC5984* 2SC5734K 2sc5917 2SC5734 2SA2054