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    2SA1940 Search Results

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    2SA1940 Price and Stock

    EVVO Semiconductor 2SA1940

    TRANS PNP 120V 8A TO3P
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SA1940 Tube 1
    • 1 $2.38
    • 10 $1.627
    • 100 $2.38
    • 1000 $0.89544
    • 10000 $0.875
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    2SA1940 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SA1940 Toshiba High-Frequency Switching Power Transistors (2SA Series); Surface Mount Type: N; Package: TO-3P(N); Number Of Pins: 3; Viewing Angle: taping unavailable; Publication Class: High Frequency Switching Power Transistor; Application Scope: output(50W); Part Number: 2SC5197 Original PDF
    2SA1940 Unknown Silicon PNP Transistor Scan PDF
    2SA1940 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SA1940 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SA1940 Toshiba Silicon PNP transistor for power amplifier applications. Recommended for 55W high fidelity audio frequency amplifier output stage Scan PDF
    2SA1940 Toshiba TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE Scan PDF
    2SA1940O Toshiba Silicon PNP Triple Diffused Transistor Scan PDF
    2SA1940R Toshiba Silicon PNP Triple Diffused Transistor Scan PDF

    2SA1940 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    a1940

    Abstract: Toshiba transistor A1940 toshiba a1940 2SA1940 2SC5197
    Text: 2SA1940 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1940 Power Amplifier Applications Unit: mm • Complementary to 2SC5197 • Recommended for 55-W high-fidelity audio frequency amplifier output stage Maximum Ratings Tc = 25°C Characteristics


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    PDF 2SA1940 2SC5197 a1940 Toshiba transistor A1940 toshiba a1940 2SA1940 2SC5197

    New Jersey Semiconductor

    Abstract: No abstract text available
    Text: , Line, TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Power Transistor 2SA1940 11 DESCRIPTION • Low Collector Saturation Voltage: VCE(sa.)= -2.0V(Min) @lc= -6A r • Good Linearity of hFE


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    PDF 2SA1940 2SC51 -50mA -120V New Jersey Semiconductor

    2Sc5197

    Abstract: Collector 5v npn TRANSISTOR hfe1 Audio Output Transistor Amplifier audio NPN npn power amplifier circuit transistor Ic 1A datasheet NPN 2SA1940 2SA194 2SC51
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5197 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = 2.0V(Min) @IC= 6A ·Good Linearity of hFE ·Complement to Type 2SA1940 APPLICATIONS ·Power amplifier applications


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    PDF 2SC5197 2SA1940 2Sc5197 Collector 5v npn TRANSISTOR hfe1 Audio Output Transistor Amplifier audio NPN npn power amplifier circuit transistor Ic 1A datasheet NPN 2SA1940 2SA194 2SC51

    c5197

    Abstract: c5197 equivalent 2Sc5197 toshiba c5197 2SA1940
    Text: 2SC5197 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5197 Power Amplifier Applications Unit: mm • Complementary to 2SA1940 • Suitable for use in 55-W high fidelity audio amplifier’s output stage Absolute Maximum Ratings Tc = 25°C Characteristics


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    PDF 2SC5197 2SA1940 c5197 c5197 equivalent 2Sc5197 toshiba c5197 2SA1940

    2SA1940

    Abstract: 2SC5197 2SA1940 equivalent
    Text: SavantIC Semiconductor Product Specification 2SA1940 Silicon PNP Power Transistors DESCRIPTION •With TO-3P I package ·Complement to type 2SC5197 APPLICATIONS ·Power amplifier applications ·Recommend for 55W high fidelity audio frequency amplifier output stage


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    PDF 2SA1940 2SC5197 -120V; 2SA1940 2SC5197 2SA1940 equivalent

    2SA1940

    Abstract: 2SC5197
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1940 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -2.0V(Min) @IC= -6A ·Good Linearity of hFE ·Complement to Type 2SC5197 APPLICATIONS ·Power amplifier applications


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    PDF 2SA1940 2SC5197 -120V 2SA1940 2SC5197

    2SC5197

    Abstract: Audio Output Transistor Amplifier 2SA1940
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1940 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -2.0V(Min) @IC= -6A ·Good Linearity of hFE ·Complement to Type 2SC5197 APPLICATIONS ·Power amplifier applications


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    PDF 2SA1940 2SC5197 -50mA -120V 2SC5197 Audio Output Transistor Amplifier 2SA1940

    c5197

    Abstract: 2Sc5197 c5197 equivalent 2SA1940
    Text: 2SC5197 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5197 Power Amplifier Applications Unit: mm • Complementary to 2SA1940 • Suitable for use in 55-W high fidelity audio amplifier’s output stage Maximum Ratings Tc = 25°C Characteristics


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    PDF 2SC5197 2SA1940 c5197 2Sc5197 c5197 equivalent 2SA1940

    Toshiba transistor A1940

    Abstract: toshiba a1940 a1940
    Text: 2SA1940 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1940 Power Amplifier Applications Unit: mm • Complementary to 2SC5197 • Recommended for 55-W high-fidelity audio frequency amplifier output stage Absolute Maximum Ratings Tc = 25°C Characteristics


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    PDF 2SA1940 2SC5197 2-16C1A Toshiba transistor A1940 toshiba a1940 a1940

    a1940

    Abstract: Toshiba transistor A1940 toshiba a1940 2SA1940 2SC5197
    Text: 2SA1940 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1940 Power Amplifier Applications Unit: mm • Complementary to 2SC5197 • Recommended for 55-W high-fidelity audio frequency amplifier output stage Absolute Maximum Ratings Tc = 25°C Characteristics


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    PDF 2SA1940 2SC5197 2-16C1A a1940 Toshiba transistor A1940 toshiba a1940 2SA1940 2SC5197

    2SC4793 2sa1837

    Abstract: 100 amp npn darlington power transistors 2sC5200, 2SA1943 10 amp npn darlington power transistors 2sC5200, 2SA1943, 2sc5198 2SC4684 datasheets 2sa1930 transistor equivalent 2sc5200 2SB906-Y 2sc3303
    Text: Part Number 2SC1627A 2SA817A 2SC2235 2SA965 2SC3665 2SA1425 2SC5174 2SA1932 2SC3423 2SA1360 2SC3421 2SA1358 2SC2983 2SA1225 2SC4793 2SA1837 2SC5171 2SA1930 2SC5196 2SA1939 2SC5197 2SA1940 2SC5198 2SA1941 2SD2386 2SB1557 2SD2387 2SB1558 2SD2636 2SB1682 2SC4688


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    PDF 2SC1627A 2SA817A 2SC2235 2SA965 2SC3665 2SA1425 2SC5174 2SA1932 2SC3423 2SA1360 2SC4793 2sa1837 100 amp npn darlington power transistors 2sC5200, 2SA1943 10 amp npn darlington power transistors 2sC5200, 2SA1943, 2sc5198 2SC4684 datasheets 2sa1930 transistor equivalent 2sc5200 2SB906-Y 2sc3303

    2SA1940

    Abstract: 2SC5197
    Text: JMnic Product Specification 2SA1940 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3P I package ・Complement to type 2SC5197 APPLICATIONS ・Power amplifier applications ・Recommend for 55W high fidelity audio frequency amplifier output stage


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    PDF 2SA1940 2SC5197 -120V; 2SA1940 2SC5197

    2SC5197

    Abstract: 2SA1940
    Text: SavantIC Semiconductor Product Specification 2SC5197 Silicon NPN Power Transistors DESCRIPTION •With TO-3P I package ·Complement to type 2SA1940 APPLICATIONS ·Power amplifier applications ·Recommend for 55W high fidelity audio frequency amplifier output stage


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    PDF 2SC5197 2SA1940 2SC5197 2SA1940

    C5197

    Abstract: No abstract text available
    Text: 2SC5197 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5197 Power Amplifier Applications Unit: mm • Complementary to 2SA1940 • Suitable for use in 55-W high fidelity audio amplifier’s output stage Absolute Maximum Ratings Tc = 25°C Characteristics


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    PDF 2SC5197 2SA1940 2-16C1A C5197

    2SA1940

    Abstract: 2SC5197
    Text: 2SC5197 TO SHIBA 2 S C 5 1 97 TO SHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • • SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm 1 5.9 MAX. '— Complementary to 2SA1940 Recommend for 55W High Fidelity Audio Frequency Amplifier Output Stage. 03.2 ± 0 .2


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    PDF 2SC5197 2SA1940 2-16G1A 2SC5197

    Untitled

    Abstract: No abstract text available
    Text: 2SA1940 T O SH IB A 2 S A 1 940 TO SHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm 1 5.9 M A X ^ . • • 03.2 ± 0 .2 Complementary to 2SC5197 Recommend for 55W High Fidelity Audio Frequency Amplifier Output Stage.


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    PDF 2SA1940 2SC5197

    2SA1940

    Abstract: 2SC5197
    Text: 2SA1940 TO SH IBA 2 S A 1 940 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm 1 5.9 MAX. • • 03.2 ±0.2 Complementary to 2SC5197 Recommend for 55W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Tc = 25°C


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    PDF 2SA1940 2SC5197 2-16C1A VCB----120V, 2SA1940

    2sa1940

    Abstract: 2SC5197
    Text: 2SC5197 TO SH IBA TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2 S C 5 1 97 Unit in mm 1 5.9 MAX. • • 03.2 ±0.2 Complementary to 2SA1940 Recommend for 55W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Tc = 25°C


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    PDF 2SC5197 2SA1940 2-16C1A --120V, 2SC5197

    Untitled

    Abstract: No abstract text available
    Text: 2SA1940 TOSHIBA TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE Q a h Unit in mm POWER AMPLIFIER APPLICATIONS 15.9 MAX. 03.2 ± 0.2 Complementary to 2SC5197 Recommend for 55W High Fidelity Audio Frequency Amplifier É0 O n fc rm t S fa c rp MAXIMUM RATINGS Ta = 25°C


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    PDF 2SA1940 2SC5197 2-16C1A -120V --50mA

    2SA1940

    Abstract: 2SC5197
    Text: 2SA1940 TO SHIBA 2 S A 1 940 TO SHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm 1 5.9 MAX. • • Complementary to 2SC5197 Recommend for 55W High Fidelity Audio Frequency Amplifier Output Stage. 03.2 ± 0 .2 % M A X IM U M RATINGS Ta = 25°C


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    PDF 2SA1940 2SC5197 2-16C1A -120V 2SA1940

    2SA1940

    Abstract: 2SC5197
    Text: AOK AOK Semiconductor Product Specification 2SA1940 S ilicon PNP Power Transistors DESCRIPTION • With TO-3P l package • Complement to type 2SC5197 APPLICATIONS • Power amplifier applications • Recommend for 55W high fidelity audio frequency amplifier output stage


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    PDF 2SA1940 2SC5197

    Untitled

    Abstract: No abstract text available
    Text: 2SC5197 SILICON NPN TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONS. U n it 15.9MAX. • • in mm 03 2 1 0 2 Complementary to 2SA1940 Recommend for 55W High Fidelity Audio Frequency Amplifier Output Stage. M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC


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    PDF 2SC5197 2SA1940 2-16C1A

    2SA1940

    Abstract: 2SC5197
    Text: 2SC5197 TO SH IBA TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2 S C 5 1 97 Unit in mm 1 5.9 MAX. • • 03.2 ±0.2 Complementary to 2SA1940 Recommend for 55W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta = 25°C


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    PDF 2SC5197 2SA1940 2-16C1A --120V, 2SC5197

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A 2SC5197 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2 S C 5 1 97 Unit in mm POWER AMPLIFIER APPLICATIONS 1 5.9 M A X ^ . • Complementary to 2SA1940 • Recommend for 55W High Fidelity Audio Frequency Amplifier Output Stage. 03.2 ± 0 .2


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    PDF 2SC5197 2SA1940